ltw-m140
Abstract: LTW-193ZDS5 piranha led 0.5w LTOE-15D11 ltst-c235kgkrkt LTW-C282DS5 LTST-T670TBL LTST-S326 LTST-C281KRKT LTR-301 002
Text: 002 003 Alphanumerical Index 012 Application Showcase 021 Quality & Reliability Product SMD LED 022 Low Power SIR 115Kb/s Infrared Transceiver Standard and Low Power FIR 4Mb/s Infrared Transceiver SIR 115kb/s Infrared + Remote Control Transceiver FIR 4Mb/s Infrared + Remote Control Transceiver
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115Kb/s
940nm
870nm
ltw-m140
LTW-193ZDS5
piranha led 0.5w
LTOE-15D11
ltst-c235kgkrkt
LTW-C282DS5
LTST-T670TBL
LTST-S326
LTST-C281KRKT
LTR-301 002
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Untitled
Abstract: No abstract text available
Text: Comchip ESD Protection Array SMD Diode Specialist CSRS065V0-G RoHS Device Working Voltage: 5Volts SO T2 3- 6 Features - Fast Reverse Recovery Time. - Fast Turn on Time. - Low Capacitance SMD Packages. - 16kV IEC61000-4-2 capable. SOT-23-6 .122(3.10) .107(2.70)
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CSRS065V0-G
IEC61000-4-2
OT-23-6
OT-23-6
MILSTD-750D,
QW-BP013
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st smd diode marking code
Abstract: STMicroelectronics smd DIODE marking code BYW81-200SHRB SMD DIODE 739 510302905 st smd diode marking code b2 STMicroelectronics smd marking code BYW81HR byw81-200cfsy1 byw81-200cfsyhrb
Text: BYW81HR Aerospace 1 x 15 A and 2 x 15 A - 200 V fast recovery rectifier Features • Very small conduction losses ■ Negligible switching losses ■ High surge current capability ■ High avalanche energy capability ■ Hermetic packages ■ Target radiation qualification:
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BYW81HR
O-254
BYW81-200CFSY1
O-254
st smd diode marking code
STMicroelectronics smd DIODE marking code
BYW81-200SHRB
SMD DIODE 739
510302905
st smd diode marking code b2
STMicroelectronics smd marking code
BYW81HR
byw81-200cfsy1
byw81-200cfsyhrb
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510302905
Abstract: BYW81-200SHRB
Text: BYW81HR Aerospace 1 x 15 A and 2 x 15 A - 200 V fast recovery rectifier Features • Very small conduction losses ■ Negligible switching losses ■ High surge current capability ■ High avalanche energy capability ■ Hermetic packages ■ Target radiation qualification:
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BYW81HR
O-254
BYW81-200CFSY1
O-254
510302905
BYW81-200SHRB
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STMicroelectronics smd marking code
Abstract: st smd diode marking code
Text: BYW81HR Aerospace 1 x 15 A and 2 x 15 A - 200 V fast recovery rectifier Datasheet - production data Description Packaged in hermetic TO-254 or SMD.5, this device is intended for use in medium voltage, high frequency switching mode power supplies, high frequency DC to DC converters, and other
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BYW81HR
O-254
O-254
BYW81-200CFSY1
DocID17735
STMicroelectronics smd marking code
st smd diode marking code
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CT4148
Abstract: CT4148WSN
Text: Compact Technology CT4148WSN Small signal switching Diodes Foward Power Dissipation 200mW 0805 .086 2.2 .071 (1.8) FEATURES Silicon epitaxial planar diode SMD chip pattern, available in various dimension included 1206 .057 (1.45) .041 (1.05) Fast switching diode.
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CT4148WSN
200mW
CT4148
CT4148WSN
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CT4148WN
Abstract: CT4148 400MW
Text: Compact Technology CT4148WN Small signal switching Diodes Foward Power Dissipation 400mW 1206 .134 3.40 .118 (3.00) FEATURES Silicon epitaxial planar diode SMD chip pattern, available in various dimension included 0805 &0603 .067 (1.70) .051 (1.30) 12 Fast switching diode.
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CT4148WN
400mW
CT4148WN
CT4148
400MW
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652 diode
Abstract: 652 smd B340 smd diode rectifier DO-214AC 24 DO-214AC DO-214AC 652-CD214A-B240L CD0603-S01575 CD0603-S0180R 652-CD214A-B130
Text: NEW TECHNOLOGY NEW TECHNOLOGY NEW TECHNOLOGY NEW TECHNOLOGY NEXT BOURNS SMD Diodes SMD SWITCHING DIODES Bourns offers small-signal high-speed Switching Diodes for switching digital signal applications, in compact chip package size format, which offer PCB real
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16N60B2D1
Abstract: igbt induction cooker IXG IGBT
Text: Advance Technical Information HiPerFASTTM IGBT B2-Class High Speed IGBT VCES = 600 V = 40 A IC25 VCE sat = 2.3 V tfi(typ) = 80 ns IXGA 16N60B2 IXGP 16N60B2 IXGA 16N60B2D1 IXGP 16N60B2D1 D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600
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16N60B2
16N60B2D1
IC110
ID110
16N60B2D1
728B1
123B1
728B1
igbt induction cooker
IXG IGBT
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2N100
Abstract: FIGURE10 125OC IXTA2N100 IXTP2N100
Text: High Voltage MOSFET IXTA 2N100 IXTP 2N100 VDSS = 1000 V ID25 =2A RDS on = 7 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient
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2N100
O-220AB
O-263
125OC
Figure10.
2N100
FIGURE10
125OC
IXTA2N100
IXTP2N100
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Untitled
Abstract: No abstract text available
Text: Formosa MS SMD Low Capacitance Integrated ESD Protection array L054BT26 List List. 1 Package outline. 2
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L054BT26
MIL-STD-750D
METHOD-1038
JESD22-A102
METHOD-1051
METHOD-1021
1000hrs.
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smd 3528 led strip
Abstract: led lamp 230v circuit diagram SMD marking code GEM 3524 smd strip Lr 47016 3014 LED smd 1W HIGH BRIGHT LED 230V CIRCUITS SMD CAPACITORS grey color code touch plate piezo 3014 LED
Text: Switches and Indicators – Panel and Pcb Mount ISO 9001 / ISO 14001 Board mount switches. Keytop styles available in various shapes, sizes, heights and colors. Momentary action Pcb mounting SMT mounting 1 pole switching N.C. contact function Series SMS / PMS / PMK 1/2"
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LH1529FP
Abstract: LH1529FPTR LH1529GP LH1529GPTR TS117P opto coupler 5 lead
Text: LH1529FP/FPTR LH1529GP/GPTR Telecom Switch – 1 Form A Solid State Relay FEATURES • Solid State Relay and Optocoupler in One Package • Surface Mount Package—NEW FLAT PAK • l/O Isolation, 3000 VRMS • LH1529FP, CTR Min.=33% • LH1529GP, CTR Min.=100%
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LH1529FP/FPTR
LH1529GP/GPTR
LH1529FP,
LH1529GP,
TS117P)
1-888-Infineon
LH1529FP/FPTR/LH1529GP/GPTR
LH1529FP
LH1529FPTR
LH1529GP
LH1529GPTR
TS117P
opto coupler 5 lead
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optocoupler a 3131
Abstract: optocoupler 3131 3131 optocoupler a 3131 opto optocoupler bi-directional 4 pin diode receptor LH1529FP LH1529FPTR LH1529GP LH1529GPTR
Text: LH1529FP/FPTR/GP/GPTR Telecom Switch – 1 Form A Solid State Relay FEATURES • Solid State Relay and Optocoupler in One Package • Surface Mount Package—NEW FLAT PAK • l/O Isolation, 3000 VRMS • LH1529FP, CTR Min.=33% • LH1529GP, CTR Min.=100% • Optocoupler
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LH1529FP/FPTR/GP/GPTR
LH1529FP,
LH1529GP,
TS117P)
17-August-01
optocoupler a 3131
optocoupler 3131
3131 optocoupler
a 3131 opto
optocoupler bi-directional 4 pin
diode receptor
LH1529FP
LH1529FPTR
LH1529GP
LH1529GPTR
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Untitled
Abstract: No abstract text available
Text: VISHAY LH1529FP/ FPTR/ GP/ GPTR Vishay Semiconductors Telecom Switch - 1 Form A Solid State Relay Features • Solid State Relay and Optocoupler in One Package • Surface Mount Package - NEW FLAT PAK • Isolation Test Voltage, 3000 VRMS • LH1529FP, CTR Min. = 33 %
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LH1529FP/
LH1529FP,
LH1529GP,
TS117P)
i179050
E52744
D-74025
06-Oct-03
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Untitled
Abstract: No abstract text available
Text: Vishay Intertechnology, Inc. Automotive Internal Combustion Engine Vehicles, Conventional Power Trains One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Automotive 内燃機関車両 スタンダードパワー・トレイン
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24-terminal
VMN-MS6792-1304-AUIC
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TO264AA
Abstract: IXFK90N20Q IXFK90N20QS TO-264-aa
Text: ADVANCED TECHNICAL INFORMATION HiPerFETTM Power MOSFETs IXFK90N20Q IXFK90N20QS Q Class Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 200 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C
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IXFK90N20Q
IXFK90N20QS
O-264
O-264AA
TO264AA
IXFK90N20Q
IXFK90N20QS
TO-264-aa
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16N60
Abstract: 16N60C2D1
Text: Advance Technical Information HiPerFASTTM IGBT C2-Class High Speed IGBT IXGA IXGP IXGA IXGP 16N60C2 16N60C2 16N60C2D1 16N60C2D1 VCES IC25 VCE sat = 600 V = 40 A = 3.0 V = 35 ns tfi(typ) D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600
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16N60C2
16N60C2D1
IC110
ID110
16N60C2D1
O-220
728B1
123B1
16N60
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1461 smd
Abstract: No abstract text available
Text: nixYS AdvancedTechnical Information High Voltage MOSFET IXTA 2N80 IXTP 2N80 N-Channel Enhancement Mode Avalanche Energy Rated V* DSS = ^D25 P DS on “ 800 V 2A 5.5 Q — Symbol Test Conditions VDSS Tj =25°Cto150°C 800 V v DGR Tj = 25° C to 150° C; RGS= 1 M£2
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Cto150
O-220AB
O-045
1461 smd
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Untitled
Abstract: No abstract text available
Text: High Voltage MOSFET IXTA2N100 IXTP2N100 N-Channel Enhancement Mode v DSS ^D25 P DS on =1000 V =2A =7Q 9 Symbol Test Conditions V ¥ dss Tj =25°Cto150°C 1000 V VDGR Tj = 25° C to 150° C; RGS= 1 MQ 1000 V Continuous i2 0 V Transient 130 V VGS v GSM ^D25
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IXTA2N100
IXTP2N100
Cto150
O-263
O-22QAB
1999IXYS
C2-76
C2-77
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2N100
Abstract: C285 IXTP2N100A
Text: ItilXYS IXTA/fXTP 2 N100 IXTA/IXTP 2 N100A VDSS ^D25 1000 V 1000 V 2A 2A p DS on 7.0 Û 6.0 ß N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VOSS Tj = 25°C to 150°C 1000 V V Tj = 25°C to 150°C; RGS= 1 M fi 1000 V Vos VGSM Continuous
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N100A
O-220
O-263
2N100
2N100A
2N100A
C2-85
C285
IXTP2N100A
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264AA
Abstract: SMD-264 TO264AA smd diode 513 TO-264-aa 35N50 diode 253 TO-264AA
Text: HiPerFET Power MOSFETs ^D S S IXFK33N50 IXFK35N50 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Lowtrr ^D25 ^DS on 500 V 33 A 0.16 Q 500 V 35 A 0.15 Q trr < 250 ns Preliminary data Symbol Test C onditions Maximum Ratings V DSS Tj = 25°C to150°C
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IXFK33N50
IXFK35N50
to150
33N50
35N50
O-264AA
264AA
SMD-264
TO264AA
smd diode 513
TO-264-aa
diode 253
TO-264AA
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smd diode 513
Abstract: TO-264 35n50
Text: HiPerFET Power MOSFETs V DSS IXFK33N50 IXFK35N50 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t D ^D25 DS on 500 V 33 A 0.16 Q 500 V 35 A 0.15 Q t < 250 ns Preliminary data Symbol Test Conditions Maximum Ratings V DSS Tj = 25°C to 150°C
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IXFK33N50
IXFK35N50
33N50
35N50
35N50
O-264
smd diode 513
TO-264
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Untitled
Abstract: No abstract text available
Text: □ IXYS HIPerFET IXFK90N20Q IXFK90N20QS Power MOSFETs V DSS ^D25 D DS on Q Class Symbol Test Conditions Maximum Ratings V DSS Td = 25°C to 150°C 200 V Td = 25°C to 150°C; RGS = 1 M£i 200 V VGS Continuous ±20 V V GSM Transient ±30 V DGR ^D25 Tc = 25°C
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IXFK90N20Q
IXFK90N20QS
O-264AA
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