aeg diode Si 11 K
Abstract: aeg diode Si 11 aeg Diode D6 aeg diode Si 11 n
Text: ADV MICRO P LA / P L E / A R R AY S It D E | 02S75EL. OOSTMST Û T-46-13-47 Zero Power CMOS Hard Array Logic ZHAL 24A Series Features/Benefits Ordering information • Zero standby power PART NUM BER • Low power operation PACKAGE • High-speed C M O S technology
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02S75EL.
T-46-13-47
ZHALTM24A
24-pln
28-pln
ZHAL12L10A
ZHAL14L8A
ZHAL16L6A
ZHAL18L4A
aeg diode Si 11 K
aeg diode Si 11
aeg Diode D6
aeg diode Si 11 n
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Untitled
Abstract: No abstract text available
Text: P R E L IM IN A R Y COM’L: -15/20 M A C H 4 6 5 -1 5 /2 0 High-Density EE CMOS Programmable Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 208 pins In PQFP ■ Up to 20 product terms per function, with XOR ■ JTAG, 5-V, In-circult programmable
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15nsta>
PAL34V16â
MACH465-15/20
025752b
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14L4
Abstract: 10l8 12L6 12H6 16c1 4511 logic diagram 1117 L schematic diagram PAL14L pin shourd PAL10H8
Text: ADV MICRO PLA/PL E/ ARR AY S =ib U2 b7526 ADV MICRO P L A / P L E / ARRAYS D E | 055755b 0057114 7 96D 27114 D T-V6-/3-V7 Combinatorial PALI 0H8 Series 1 0 H 8 , 1 2 H 6 , 1 4 H 4 , 1 6 H 2 1 6 C 1 1 0 L 8 , 1 2 L 6 , 1 4 L 4 - , 1 6 L 2 Ordering Information
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055755b
U2b7526
PAL10H8
2t2t303f
T-46-13-47
025752b
14H4j
14L4
10l8
12L6
12H6
16c1
4511 logic diagram
1117 L schematic diagram
PAL14L
pin shourd
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mach 3 family amd
Abstract: circuit diagram of QS 8005 PAL26V16 D750 MACH110 MACH210 MACH215 PAL22V10 mach 1 family amd NS4N
Text: FINAL COM’L: -7.5/10/12/15/20 IND: -10/12/14/18/24 M A C H 2 1 1 -7 / 1 0 / 1 2 / 1 5 /2 0 High-Density EE CMOS Programmable Logic Z I Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 44 Pins ■ 64 Macrocells ■ Programmable power-down mode ■ 32 Outputs
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MACH211-7/10/12/15/20
PAL26V16"
MACH110,
MACH111,
MACH210,
MACH215
MACH210
MACH211
PQT044
44-Pin
mach 3 family amd
circuit diagram of QS 8005
PAL26V16
D750
MACH110
MACH210
MACH215
PAL22V10
mach 1 family amd
NS4N
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PAL16l8 MMI
Abstract: PAL16LA OO3A MARKING PAL 006A pal 007a PLA 16L8 PAL16L8 programming algorithm IC PALCE16 mmi pla programmer reference guide pal 005a
Text: ADV HICRO PLA/PLE/ARRAYS C O M ’L 2flE 0aS7S2b D OGa^Mb- M IL P A L 1 6 R 8 il \ T -4 6 —1 9 -1 3 Am>a 5 Advanced Micro Devices F a m i l y 20-pin TTL P rogram m able Array Logic DISTINCTIVE CHARACTERISTICS • As fast as 7.5 ns maximum propagation delay
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PAL16R8
20-pin
PAL16L8,
PAL16R8,
PAL16R6,
PAL16R4)
PAL16l8 MMI
PAL16LA
OO3A MARKING
PAL 006A
pal 007a
PLA 16L8
PAL16L8 programming algorithm
IC PALCE16
mmi pla programmer reference guide
pal 005a
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mach231sp
Abstract: No abstract text available
Text: COM’L: -10/12/15/20 IND: -12/14/18/24 M A C H 2 3 1 S P - 1 0 / 1 2 / 1 5 /2 0 High-Density EE CMOS In-System Programmable Logic a Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • JTAG-Compatible, 5-V in-system programming ■ 100 Pins ■ Peripheral Component Interconnect PCI
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10-ns
12-ns
PAL32V16â
MACH230
MACH231SP
MACH231S
P-10/12/15/20
025752b
003b52fl
PQT100
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Untitled
Abstract: No abstract text available
Text: Advanced Micro Devices MACH220-10 High-Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • 68 Pins ■ 48 Outputs ■ 96 Macrocells ■ 96 Flip-flops; 4 clock choices ■ ■ 8 PAL blocks with buried macrocells 10 ns tPD ■ ■ 80 MHz fMAx external
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MACH220-10
MACH120
MACH220
PAL22V10
oth752b
MACH220:
68-Pin
28-Pin)
25-068-1221028A
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Untitled
Abstract: No abstract text available
Text: COM'L: -10 Advanced Micro Devices P A L L V 1 6 V 8 -1 0 Low-Voltage 20-Pin EE CMOS Universal Programmable Array Logic DISTINCTIVE CHARACTERISTICS • Low-voltage operation, 3.3 V JEDEC compatible — Vcc = +3.0 V to +3.6 V Electrically-erasable CMOS technology pro
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20-Pin
PAL16R8
PAL10H8
02S752b
6V8-10
PALLV16V8-10
25752b
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16L8-5
Abstract: PAL16R8
Text: ADV MICRO P L A / P L E / A R R A Y S 2ÔE D G25752fci GG311Gb b AMD2 CO M 'L: -5/4 T—46—19—13 Z f Advanced Micro Devices PAL16R8-5/4 Series 5 ns TTL Programmable Array Logic DISTINCTIVE CHARACTERISTICS • 5 ns and 4.5 ns m axim um pro p a g a tio n delay
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G25752fci
GG311Gb
PAL16R8-5/4
20-pin
0Q3112Ã
0257S2fc.
16L8-5
PAL16R8
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pal 007a
Abstract: MACH21D PAL 006A PAL 002a pal 005a MACH110 MACH210 MACH215 PAL22V10 PAL22V16
Text: FINAL COM’L: -7/10/12/15/20, Q-12/15/20 IND: -12/14/18/24 M ACH21OA-7/10/12 MACH210-12/15/20 MACH210AQ-12/15/20 a Advanced Micro Devices High-Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • Peripheral Component Interconnect PCI compliant
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Q-12/15/20
ACH21OA-7/10/12
MACH210-12/15/20
MACH210AQ-12/15/20
PAL22V16"
MACH110,
MACH111,
MACH211,
MACH215
MACH210
pal 007a
MACH21D
PAL 006A
PAL 002a
pal 005a
MACH110
MACH215
PAL22V10
PAL22V16
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Am29F040
Abstract: No abstract text available
Text: PRELIMINARY Am29F040 Advanced Micro Devices 4 Megabit 524,288 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% read, write, and erase — Minimizes system level power requirements ■ Compatible with JEDEC-standard commands
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Am29F040
32-pin
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Untitled
Abstract: No abstract text available
Text: FINAL a IN D :-12/15 Advanced Micro Devices P A L C E 1 6 V 8 Z -1 2 /1 5 Zero-Power 20-Pin EE CMOS Universal Programmable Array Logic DISTINCTIVE CHARACTERISTICS • Zero-Power CMOS technology — 30 pA Standby Current — 12 ns propagation delay for “-1 2” version
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20-Pin
PAL16R8
PAL10H8
QQ344A1
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Untitled
Abstract: No abstract text available
Text: FINAL COM’L: -15/20, Q-25 a MACH435-15/20, Q-25 High-Density EE CMOS Programmable Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 84 Pins in PLCC ■ Up to 20 product terms per function, with XOR ■ 128 Macrocells ■ Flexible clocking ■ 15nstpo
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MACH435-15/20,
15nstpo
PAL33V16â
MACH130,
MACH230
25752b
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Untitled
Abstract: No abstract text available
Text: FINAL COM’L: -12/15/20 IND: -18/24 a Advanced Micro Devices M A C H 1 2 0 -1 2 / 1 5 /2 0 High-Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • 68 Pins ■ 56 Inputs ■ 48 Macrocells ■ 48 Outputs ■ 12 ns tPDCommercial 18 ns tpD Industrial
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PAL26V12â
MACH220
MACH221
MACH120
PAL22V10
MACH120-12/15/20
025755fci
68-Pin
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Untitled
Abstract: No abstract text available
Text: P R E L IM IN A R Y Am28F256A Advanced Micro Devices 256 Kilobit 32,768 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • ■ High perform ance ■ CM OS low pow er consum ption — 30 m A maximum active current
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Am28F256A
32-pin
28F256A
0D32b3M
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Untitled
Abstract: No abstract text available
Text: ADV MICRO P L A / P L E / A R R A Y S P is a 2ÔE » □2S7S2b 0G2lb3M T IA M D 5 COM ’L PALCE26V12H-20/25 28-Pin EE CMOS Versatile PAL Device Advanced Micro Devices DISTINCTIVE CHARACTERISTICS 28-pln versatile PAL programmable logic device architecture
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PALCE26V12H-20/25
28-Pin
28-pln
PALCE26V12
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Untitled
Abstract: No abstract text available
Text: ADV MICRO MEMORY T> m b4E 02S752Ö D Q 3 2 2 1 4 31T • AMD4 a Advanced Micro Devices Am27X040 4 Megabit (524,288 x 8-Bit) CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS ■ ±10% power supply tolerance ■ As an OTP EPROM alternative: ■ High noise immunity
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02S752Ã
Am27X040
KS000010
15654B-9
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PAL20LB
Abstract: mmi 20L8 amd part marking 20L8 PAL20L8 PAL20R4 PAL20R6 PAL20R8 PAL20L8-7
Text: F IN A L C O M 'L : -5 /7 /B /B -2 /A , 10/2 a Advanced Micro Devices PAL20R8 Family 24-Pin TTL Programmable Array Logic DISTINCTIVE CHARACTERISTICS • 5*ns propagation delay ■ Power-up reset for Initialization ■ Popular 24-pin architectures: 20L8,20R8,
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PAL20R8
24-Pin
PAL20R8.
PAL20R6,
PAL20R4)
PAL20R8-5
28-pin
PAL20LB
mmi 20L8
amd part marking
20L8
PAL20L8
PAL20R4
PAL20R6
PAL20L8-7
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amd215
Abstract: No abstract text available
Text: FIN A L COM’L: -15/20, Q-25 a Advanced Micro Devices MACH445-15/20, Q-25 High-Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • 100-pin version of the MACH435 in PQFP ■ Up to 20 product terms per function, with XOR ■ 5 V, in-circuit programmable
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MACH445-15/20,
100-pin
MACH435
PAL33V16"
MACH435
02S752b
QG3M451
PQR100
amd215
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AMD a 462 socket pinout
Abstract: No abstract text available
Text: ADV MICRO MEMORY 38E Q 02s7saa 7 hamdm ggetöoq ¿Ü^PreOmlnarypllfc" r= 4 (,- ß - 2 l Am28F512 Advanced Micro Devices 65,536 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS • ■ High performance - 90 ns maximum access time Low power consum ption
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02s7saa
Am28F512
32-pin
T-90-10
AMD a 462 socket pinout
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Untitled
Abstract: No abstract text available
Text: 51E DE5752b D 003225b 577 • A U D E ADV MICRO P L A / P L E / A R R A Y S COM’L: -4/5/7/D/B/B-2/A MIL: - 1 0 /1 2/B/B-2/A/B-4 a Advanced Micro Devices PAL16R8 Family 20-Pin TTL Programmable Array Logic DISTINCTIVE CHARACTERISTICS ■ As fast as 4.5 ns maximum propagation delay
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DE5752b
003225b
PAL16R8
20-Pin
20-pfn
28-pin
PAL16L8,
PAL16R8,
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Untitled
Abstract: No abstract text available
Text: P R E L IM IN A R Y CO M ’L: -7/10/12/15/20 MACH221 -7/10/12/15/20 High-Density EE CMOS Programmable Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 68 Pins ■ 96 M acrocells ■ 7.5 ns tpD ■ ■ 133 M Hz fcNT ■ 56 Bus-Friendly Inputs ■
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MACH221
PAL26V12"
MACH120
MACH220
025752b
0037M01
PQR208
208-Pin
16-038-PQR-2
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Untitled
Abstract: No abstract text available
Text: FINAL COM’L: -12/15/20 IND: -18/24 il M ACHLV210-12/15/20 Advanced Micro Devices High Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • Low-voltage operation, 3.3-V JEDEC compatible - ■ 83.3 MHz fcNT ■ 38 Bus-Friendly Inputs Vcc = +3.0 V to +3.6 V
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PAL22V16â
MACH210
MACHLV210-12/15/20
25752b
44-Pin
16-038-SQ
25752b
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Untitled
Abstract: No abstract text available
Text: COM’L: -7.5/10/12/15/20 M A C H 2 3 1 -7 /1 0 /1 2 /1 5 /2 0 High-Density EE CMOS Programmable Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 84 Pins ■ Program m able power-down mode ■ 128 Macrocells ■ 64 Outputs ■ 7.5 ns tpo ■ 128 Flip-flops; 4 clock choices
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L32V16â
ACH131,
MACH230,
MACH435
MACH230
MACH231
025752b
PQR208
208-Pin
16-038-PQR-2
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