03DEC2001 Search Results

ST M29W800DT

Abstract: M29W800D M29W800DB M29W800DT TFBGA48
Contextual Info: M29W800DT M29W800DB 8 Mbit 1Mb x8 or 512Kb x16, Boot Block 3V Supply Flash Memory Features • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read ■ Access times: 45, 70, 90ns ■ Programming time – 10µs per Byte/Word typical ■ 19 memory blocks

M29F016D

Contextual Info: M29F016D 16 Mbit 2Mb x8, Uniform Block 5V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 5V ±10% for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 55, 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte typical

M29W017D

Abstract: TFBGA48
Contextual Info: M29W017D 16 Mbit 2Mb x8, Uniform Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIME: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte typical

Contextual Info: M29F080D 8 Mbit 1Mb x8, Uniform Block 5V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 5V ±10% for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 55, 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte typical

Contextual Info: M41ST84W 3.0/3.3 V I2C serial RTC with 44 bytes of NVRAM and supervisory functions Not recommended for new design Features • Automatic battery switchover and deselect – Power-fail deselect, VPFD = 2.60 V nom – Switchover, VSO = 2.50 V (nom) ■ 400 kHz I2C serial interface

TL1300H

Abstract: GR-1089-CORE TL0640H TL0720H TL0900H TL1100H TL3500H TL1500H
Contextual Info: LITE-ON SEMICONDUCTOR TL0640H thru TL3500H Bi-Directional SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE - 58 to 320 Volts - 100 Amperes VDRM IPP DO-201AD FEATURES Oxide Glass Passivated Junction Bidirectional protection in a single device Surge capabilities up to 100A @ 10/1000us or 400

GR-1089-CORE

Abstract: TC0640H TC0720H TC0900H TC1100H TC1300H TC3500H
Contextual Info: LITE-ON SEMICONDUCTOR TC0640H thru TC3500H Bi-Directional SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE - 58 to 320 Volts - 100 Amperes VDRM IPP FEATURES Oxide Glass Passivated Junction Bidirectional protection in a single device Surge capabilities up to 100A @ 10/1000us or 400 @

M41ST85W

Abstract: M4T28-BR12SH1 M4T32-BR12SH1 M4T32-BR12SH6 SOH28
Contextual Info: M41ST85W 3.0/3.3V I2C combination serial RTC, NVRAM supervisor and microprocessor supervisor Features • ■ SNAPHAT SH battery & crystal Automatic battery switchover and WRITE protect for: – Internal serial RTC and – External low power SRAM (LPSRAM)

1510M

Abstract: DF15005M DF1510M
Contextual Info: LITE-ON SEMICONDUCTOR DF15005M thru DF1510M REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 1.5 Amperes GLASS PASSIVATED BRIDGE RECTIFIERS FEATURES DF Rating to 1000V PRV Ideal for printed circuit board Low forward voltage drop, high current capability.

DF01S

Abstract: DF02S DF04S DF06S DF08S DF10S
Contextual Info: LITE-ON SEMICONDUCTOR DF005S thru DF10S REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 1.0 Amperes SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIERS FEATURES DF-S Rating to 1000V PRV Ideal for printed circuit board Low forward voltage drop high current capability.

KDS 32kHZ crystal

Abstract: quartz crystal kds 70 AN1572 M41ST84W AN1012 AI005
Contextual Info: M41ST84W 3.0/3.3 V I2C serial RTC with 44 bytes of NVRAM and supervisory functions Not recommended for new design Features • Automatic battery switchover and deselect – Power-fail deselect, VPFD = 2.60 V nom – Switchover, VSO = 2.50 V (nom) ■ 400 kHz I2C serial interface

GR-1089-CORE

Abstract: TA0640M TA0720M TA0900M TA1100M TA1300M TA3500M
Contextual Info: LITE-ON SEMICONDUCTOR TA0640M thru TA3500M Bi-Directional SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE - 58 to 320 Volts - 50 Amperes VDRM IPP FEATURES Oxide Glass Passivated Junction Bidirectional protection in a single device Surge capabilities up to 50A @10/1000us or 250A

TECHNICAL SPECIFICATION DATA SHEET GOLD 705

Abstract: M41ST85W M4T28-BR12SH1 M4T32-BR12SH1 M4T32-BR12SH6 SOH28 AN934 24JAN NVRAM
Contextual Info: M41ST85W 3.0/3.3 V I2C combination serial RTC, NVRAM supervisor and microprocessor supervisor Features SNAPHAT SH battery & crystal • Automatic battery switchover and WRITE protect for: – Internal serial RTC and – External low power SRAM (LPSRAM) ■

JESD97

Abstract: M29F016D A12A20
Contextual Info: M29F016D 16 Mbit 2Mb x8, Uniform Block 5V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 5V ±10% for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 55, 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte typical ■

JESD97

Abstract: M29F080D
Contextual Info: M29F080D 8 Mbit 1Mb x8, Uniform Block 5V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 5V ±10% for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 55, 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte typical ■

M29W800D

Abstract: M29W800DB M29W800DT TFBGA48
Contextual Info: M29W800DT M29W800DB 8 Mbit 1Mb x8 or 512Kb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIME: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical

Contextual Info: M29W800DT M29W800DB 8 Mbit 1Mb x8 or 512Kb x16, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIME: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical

Contextual Info: Preliminary Data Sheet Part Number 855938 1950 MHz SAW Filter Features • • • • • • • • For 3G applications Usable bandwidth 60 MHz Low loss No impedance matching required for operation at 50 Ω Single-ended operation Ceramic Surface Mount Package SMP

GR-1089-CORE

Abstract: TA0640L TA0720L TA0900L TA1100L TA1300L TA3500L
Contextual Info: LITE-ON SEMICONDUCTOR TA0640L thru TA3500L Bi-Directional SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE - 58 to 320 Volts - 30 Amperes VDRM IPP FEATURES Oxide Glass Passivated Junction Bidirectional protection in a single device Surge capabilities up to 30A @ 10/1000us or 150A

M29W800D

Abstract: M29W800DB M29W800DT TFBGA48
Contextual Info: M29W800DT M29W800DB 8 Mbit 1Mb x8 or 512Kb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read ACCESS TIMES: 45, 70, 90ns PROGRAMMING TIME

Contextual Info: M29W017D 16 Mbit 2Mb x8, Uniform Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIME: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte typical

Contextual Info: M29W800DT M29W800DB 8 Mbit 1Mb x8 or 512Kb x16, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIME: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical

Contextual Info: M29F016D 16 Mbit 2Mb x8, Uniform Block 5V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 5V ±10% for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 55, 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte typical ■

Contextual Info: M29W800DT M29W800DB 8-Mbit 1 Mbit x 8 or 512 Kbits x 16, boot block 3 V supply flash memory Features „ Supply voltage – VCC = 2.7 V to 3.6 V for program, erase and read „ Access times: 45, 70, 90 ns „ Programming time – 10 s per byte/word typical