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    A12A20 Search Results

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    A12A20 Price and Stock

    TT electronics / BI Technologies P160KN-0QA12A20K

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    DigiKey P160KN-0QA12A20K Tray 5,280
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    Sager P160KN-0QA12A20K 1,320
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    TT electronics / BI Technologies P160KN-0QA12A200

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    DigiKey P160KN-0QA12A200 Tray 5,280
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    Sager P160KN-0QA12A200 1,320
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    TT electronics / BI Technologies P160KN-1QA12A20K

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    DigiKey P160KN-1QA12A20K Tray 5,280
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    Sager P160KN-1QA12A20K 1,320
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    TT electronics / BI Technologies P160KNP-1QA12A200

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    DigiKey P160KNP-1QA12A200 Tray 5,500
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    Sager P160KNP-1QA12A200 1,100
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    TT electronics / BI Technologies P160KN2-2QA12A20K

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    DigiKey P160KN2-2QA12A20K Tray 5,940
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    Sager P160KN2-2QA12A20K 990
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    Find more A12A20 price and stock on Findchips.com

    A12A20 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    M29W320DT

    Abstract: M29W320D M29W320DB TFBGA48
    Text: M29W320DT M29W320DB 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ ACCESS TIME: 70, 90ns


    Original     		PDF M29W320DT M29W320DB TSOP48 TFBGA63 TFBGA48 M29W320DT M29W320D M29W320DB TFBGA48

    M28W320BB

    Abstract: M28W320BT
    Text: M28W320BT M28W320BB 32 Mbit 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output – VPP = 12V for fast Program (optional) ■


    Original     		PDF M28W320BT M28W320BB 100ns TFBGA47 M28W320BB M28W320BT

    M29DW323D

    Abstract: TSOP48 outline M29DW323DB M29DW323DT M29DW324D M29DW324DB M29DW324DT
    Text: M29DW324DT M29DW324DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional) ACCESS TIME: 70, 90ns


    Original     		PDF M29DW324DT M29DW324DB TSOP48 M29DW323D TSOP48 outline M29DW323DB M29DW323DT M29DW324D M29DW324DB M29DW324DT

    M36DR432AD

    Abstract: M36DR432BD
    Text: M36DR432AD M36DR432BD 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit (256Kb x16) SRAM, Multiple Memory Product FEATURES SUMMARY • Multiple Memory Product Figure 1. Package – 1 bank of 32 Mbit (2Mb x16) Flash Memory – 1 bank of 4 Mbit (256Kb x16) SRAM


    Original     		PDF M36DR432AD M36DR432BD 256Kb 100ns, 120ns 0020h LFBGA66 M36DR432AD: 00A0h M36DR432AD M36DR432BD

    D8000-DFFF

    Abstract: No abstract text available
    Text: M28W160BT M28W160BB 16 Mbit 1Mb x16, Boot Block Low Voltage Flash Memory PRELIMINARY DATA • SUPPLY VOLTAGE – VDD = 2.7V to 3.6V: for Program, Erase and Read – VDDQ = 1.65V or 2.7V: Input/Output option – VPP = 12V: optional Supply Voltage for fast


    Original     		PDF M28W160BT M28W160BB 100ns TSOP48 BGA46 A0-A19 D8000-DFFF

    Untitled

    Abstract: No abstract text available
    Text: M28W800BT M28W800BB 8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory PRELIMINARY DATA • SUPPLY VOLTAGE – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = 1.65V or 2.7V for I/O Buffers – VPP = 12V for fast Program (optional) ■ ACCESS TIME


    Original     		PDF M28W800BT M28W800BB 512Kb 100ns TSOP48 TFBGA45

    Untitled

    Abstract: No abstract text available
    Text: M58CR064C, M58CR064D M58CR064P, M58CR064Q 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Package – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)


    Original     		PDF M58CR064C, M58CR064D M58CR064P, M58CR064Q 54MHz 120ns TFBGA56

    M29F016D

    Abstract: No abstract text available
    Text: M29F016D 16 Mbit 2Mb x8, Uniform Block 5V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 5V ±10% for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 55, 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte typical


    Original     		PDF M29F016D 64Kbyte TSOP40 M29F016D

    M29W017D

    Abstract: TFBGA48
    Text: M29W017D 16 Mbit 2Mb x8, Uniform Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIME: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte typical


    Original     		PDF M29W017D TSOP40 TFBGA48 M29W017D TFBGA48

    A0-A21

    Abstract: CR10 M58WR064EB M58WR064ET VFBGA56
    Text: M58WR064ET M58WR064EB 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Package – VDD = 1.65V to 2.2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)


    Original     		PDF M58WR064ET M58WR064EB 54MHz VFBGA56 A0-A21 CR10 M58WR064EB M58WR064ET VFBGA56

    code lock circuit flow chart

    Abstract: M28W320ECB M28W320ECT M28W320
    Text: M28W320ECT M28W320ECB 32 Mbit 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output ■ – VPP = 12V for fast Program (optional)


    Original     		PDF M28W320ECT M28W320ECB 100ns TFBGA47 TSOP48 code lock circuit flow chart M28W320ECB M28W320ECT M28W320

    M36DR432A

    Abstract: M36DR432B
    Text: M36DR432A M36DR432B 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit (256K x16) SRAM, Multiple Memory Product FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDDF = VDDS =1.65V to 2.2V ■ – VPPF = 12V for Fast Program (optional) ACCESS TIME: 100,120ns


    Original     		PDF M36DR432A M36DR432B 120ns M36DR432A: 00A0h M36DR432B: 00A1h LFBGA66 35nions M36DR432A M36DR432B

    M29DW324D

    Abstract: M29DW324DB M29DW324DT TFBGA48 TFGBA48
    Text: M29DW324DT M29DW324DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional)


    Original     		PDF M29DW324DT M29DW324DB TSOP48 16Mbit 16Mbit TFBGA63 M29DW324D M29DW324DB M29DW324DT TFBGA48 TFGBA48

    JESD97

    Abstract: M28W320FCB M28W320FCT
    Text: M28W320FCT M28W320FCB 32 Mbit 2Mb x16, Boot Block 3V Supply Flash Memory Feature summary • Supply Voltage – VDD = 2.7V to 3.6V Core Power Supply – VDDQ= 1.65V to 3.6V for Input/Output – VPP = 12V for fast Program (optional) ■ Access Time: 70, 80, 90, 100ns


    Original     		PDF M28W320FCT M28W320FCB JESD97 M28W320FCB M28W320FCT

    M59MR032C

    Abstract: M59MR032D w849 ADQ14
    Text: M59MR032C M59MR032D 32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory • SUPPLY VOLTAGE – VDD = VDDQ = 1.65V to 2.0V for Program, Erase and Read ■ – VPP = 12V for fast Program (optional) MULTIPLEXED ADDRESS/DATA ■ SYNCHRONOUS / ASYNCHRONOUS READ


    Original     		PDF M59MR032C M59MR032D 100ns LFBGA54 BGA46 M59MR032C M59MR032D w849 ADQ14

    M29W320E

    Abstract: M29W320EB M29W320ET TFBGA48
    Text: M29W320ET M29W320EB 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)


    Original     		PDF M29W320ET M29W320EB M29W320E M29W320EB M29W320ET TFBGA48

    IS1651

    Abstract: M29DW323D M29DW323DB M29DW323DT TFBGA48
    Text: M29DW323DT M29DW323DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)


    Original     		PDF M29DW323DT M29DW323DB 24Mbit IS1651 M29DW323D M29DW323DB M29DW323DT TFBGA48

    M36DR232A

    Abstract: M36DR232B M36DR232
    Text: M36DR232A M36DR232B 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit (128K x16) SRAM, Multiple Memory Product FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDDF = VDDS =1.65V to 2.2V ■ – VPPF = 12V for Fast Program (optional) ACCESS TIME: 100,120ns


    Original     		PDF M36DR232A M36DR232B 120ns M36DR232A: 00A0h M36DR232B: 00A1h LFBGA66 35nions M36DR232A M36DR232B M36DR232

    CSP-60

    Abstract: LH28F320BJHB-PBTL90
    Text: Date 32M x8/x16 Flash Memory LH28F320BJHB-PBTL90 Nov. 2. 2000 LHF32J16 ●Handle this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited without the express written


    Original     		PDF x8/x16) LH28F320BJHB-PBTL90 LHF32J16 AP-001-SD-E AP-006-PT-E AP-007-SW-E CSP-60 LH28F320BJHB-PBTL90

    LH28F320BJB-PBTL90

    Abstract: No abstract text available
    Text: Date 32M x8/x16 Flash Memory LH28F320BJB-PBTL90 Oct. 30. 2000 LHF32J14 ●Handle this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited without the express written


    Original     		PDF x8/x16) LH28F320BJB-PBTL90 LHF32J14 AP-001-SD-E AP-006-PT-E AP-007-SW-E LH28F320BJB-PBTL90

    LH28F320BJB-PTTL90

    Abstract: No abstract text available
    Text: Date 32M x8/x16 Flash Memory LH28F320BJB-PTTL90 Oct. 18. 2000 LHF32J10 ●Handle this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited without the express written


    Original     		PDF x8/x16) LH28F320BJB-PTTL90 LHF32J10 AP-001-SD-E AP-006-PT-E AP-007-SW-E LH28F320BJB-PTTL90

    Untitled

    Abstract: No abstract text available
    Text: M59DR032EA M59DR032EB 32 Mbit 2Mb x 16, Dual Bank, Page 1.8V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE – VDD = VDDQ = 1.65V to 2.2V for Program, Erase and Read Figure 1. Packages – VPP = 12V for fast Program (optional)


    Original     		PDF M59DR032EA M59DR032EB 100ns TFBGA48 7x12mm

    samsung NAND FSR

    Abstract: 29cd16 NAND IC s CIRCUIT DIAGRAM OF 15 INCH SAMSUNG MONITOR 264Byte
    Text: KM29N16000 2M x 8 Bit NAND Flash Memory SEMICONDUCTOR PRELIMINARY- June 1994 FEATURES GENERAL DESCRIPTION • Single 5 - volt Supply • Organization - Memory Cell Array : 2M +64K x 8 - Data Register : (258 + 8) x 8 • Automatic Program and Erase - Page Program : (256 + 8)Byte


    OCR Scan     		PDF KM29N16000 KM29N16000 -TSOP2-400F -TSOP2-400R samsung NAND FSR 29cd16 NAND IC s CIRCUIT DIAGRAM OF 15 INCH SAMSUNG MONITOR 264Byte

    27721

    Abstract: No abstract text available
    Text: iiili 16 Megabit 2M x 8-Bit Multi-Purpose Flash _ SST39VF016Q_ Advance Information FEATURES: • Organized as 2 M X 8 • Latched Address and Data • Single 2.7-3.6V Read and Write Operations • Fast Sector Erase and Byte Program:


    OCR Scan     		PDF SST39VF016Q_ SST39VF016Q Multi58-4276 27721