KM29N16000AT
Abstract: KM29N16000AIT KM29V16000 KM29N16000A
Text: KM29N16000AT, KM29N16000AIT FLASH MEMORY Document Title 2M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date 0.0 Data Sheet, 1997. April 10th 1997 1.0 Data Sheet, 1998. 1. Changed t BERS parameter : 5ms Typ. → 2ms(Typ.). 2. Removed reverse type package.
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KM29N16000AT,
KM29N16000AIT
KM29N16000AT
KM29N16000AIT
KM29V16000
KM29N16000A
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KM29V16000
Abstract: KM29N16000ATS
Text: KM29N16000ATS FLASH MEMORY Document Title 2M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date 0.0 Data Sheet, 1997. April 10th 1997 1.0 Data Sheet, 1998. 1. Changed t BERS parameter : 5ms Typ. → 2ms(Typ.). 2. Removed reverse type package.
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KM29N16000ATS
KM29V16000
KM29N16000ATS
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samsung NAND FSR
Abstract: 29cd16 NAND IC s CIRCUIT DIAGRAM OF 15 INCH SAMSUNG MONITOR 264Byte
Text: KM29N16000 2M x 8 Bit NAND Flash Memory SEMICONDUCTOR PRELIMINARY- June 1994 FEATURES GENERAL DESCRIPTION • Single 5 - volt Supply • Organization - Memory Cell Array : 2M +64K x 8 - Data Register : (258 + 8) x 8 • Automatic Program and Erase - Page Program : (256 + 8)Byte
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KM29N16000
KM29N16000
-TSOP2-400F
-TSOP2-400R
samsung NAND FSR
29cd16
NAND IC s
CIRCUIT DIAGRAM OF 15 INCH SAMSUNG MONITOR
264Byte
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY KM29N16000AT/R FLASH MEMORY 2 M x 8 B i t NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply The K M 29N 16000AT/R is a 2M 2,09 7 ,1 5 2 x8 b it N AND • Organization Flash m em ory w ith a spare 64K (65,536)x8 bit. Its N AND
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KM29N16000AT/R
16000AT/R
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Untitled
Abstract: No abstract text available
Text: KM29N16000ERS ELECTRONICS Fl ash 2 M x 8 B i t NAND Flash Memory Extended Temperature Product FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Wide Temperature Operation : -25'C ~ +85'C • Organization - Memory Cell Array : (2M +64K) x 8 bit
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KM29N16000ERS
-TSOP2-400F
-TSQP2-400R
b4142
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Untitled
Abstract: No abstract text available
Text: KM29N16000T/R FLASH MEMORY 2M x8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization - Memory Cell Array : 2M +64K x 8 bit - Data Register : (256 + 8 ) x 8 bit • Automatic Program and Erase - Page Program : (256 + 8)Byte
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KM29N16000T/R
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Untitled
Abstract: No abstract text available
Text: KM29N16000T/R 2Mx8Bit FLASH MEMORY NA ND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization The KM29N16000T/R is a 2M 2,097,152 x8 bit NAND Flash memory with spare 64K(65,536)x8 bit. Its NAND - Memory Cell Array - Data Register
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KM29N16000T/R
KM29N16000T/R
264-byte
300ns
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KM29N16000ATS
Abstract: No abstract text available
Text: PRELIMINARY FLASH MEMORY KM29N16000ATS/RS 2M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply The KM29N16000ATS/RS is a 2M 2,097,152 x8 bit NAND • Organization Flash memory with a spare 64K(65,536)x8 bit. Its NAND - Memory Cell Array
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KM29N16000ATS/RS
KM29N16000ATS/RS
264-byte
KM29N16000A
Figure14
KM29N16000ATS
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Untitled
Abstract: No abstract text available
Text: FLASH MEMORY KM29N16000TS/RS 2M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization The KM29N16000TS/RS is a 2M 2,097,152 x8 bit NAND Flash memory with spare 64K(65,536)x8 bit. Its NAND - Memory Cell Array : (2M +64K) x 8 bit
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KM29N16000TS/RS
KM29N16000TS/RS
264-byte
KM29N16000
Figure14
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D240C
Abstract: No abstract text available
Text: KM29N16000T/R FLASH MEMORY 2M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization - Memory Celi Array : 2M +64K x 8 bit - Data Register : (256 + 8) x 8 bit • Automatic Program and Erase - Page Program : (256 + 8)Byte
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KM29N16000T/R
D240C
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Untitled
Abstract: No abstract text available
Text: K M 2 9 N 16 0 0 0 R Fl ash ELECTRONICS 2Mx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply The KM29N16000T/R is a 2M 2,097,152 x8 bit NAND Flash memory with spare 64K(65,536)x8 bit. Its NAND cell provides the most cost-effective solution for the mass
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KM29N16000T/R
264-byte
300/js
KM29N16000R)
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY FLASH MEMORY KM29N16000ATS/RS 2Mx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization - Memory Cell Array : 2M +64K bit x 8bit - Data Register : (256 + 8)bit x 8bit • Automatic Program and Erase - Page Program : (256 + 8)Byte
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KM29N16000ATS/RS
250us
KM29N16000A
Figure14
0Q24234
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Untitled
Abstract: No abstract text available
Text: KM29N16000ATS FLASH MEMORY Document Tillo 2M X 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date 0.0 Data Sheet, 1997. April 10th 1997 1.0 Data Sheet, 1998. 1. Changed tBER S p a ra m e te r: 5ms Typ. —> 2ms(Typ.). 2. Removed reverse type package.
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KM29N16000ATS
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Untitled
Abstract: No abstract text available
Text: KM29N16000ARS Flash ELECTRONICS 2Mx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization - Memory Cell Array : 2M +64K bit x 8bit - Data Register : (256 + 8)bit x 8bit • Automatic Program and Erase - Page Program : (256 + 8)Byte
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KM29N16000ARS
250us
-TSOP2-400F
-TSOP2-400R
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29W16000
Abstract: 29V160
Text: KM29N16000AT, KM29N16000AIT FLASH MEMORY Document Title 2M X 8 Bit NAND Flash Memory Revision History Revision No. H istory Draft Date 0.0 Data Sheet, 1997. April 10th 1997 1.0 Data Sheet, 1998. 1. Changed tBER S p a ra m e te r: 5ms Typ. —> 2ms(Typ.).
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KM29N16000AT,
KM29N16000AIT
29W16000
29V160
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km29n16000at
Abstract: c60h - dc
Text: PRELIMINARY KM29N16000AT/R FLASH MEMORY 2M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization The KM29N16000AT/R is a 2M 2,097,152 x8 bit NAND Flash memory with a spare 64K(65,536)x8 bit. Its NAND cell provides the most cost-effective solution for the mass
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KM29N16000AT/R
250us
ib4142
km29n16000at
c60h - dc
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Untitled
Abstract: No abstract text available
Text: KM29N16000AT, KM29N16000AIT FLASH MEMORY Document T ills 2M X 8 Bit NAND Flash Memory R evision H istory Revision No. H istory Draft Date 0.0 Data Sheet, 1997. April 10th 1997 1.0 Data Sheet, 1998. 1. Changed tBER S p a ra m e te r: 5ms Typ. —> 2ms(Typ.).
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KM29N16000AT,
KM29N16000AIT
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Untitled
Abstract: No abstract text available
Text: KM29N16000ER Flash ELECTRONICS 2Mx8Bit NAND Flash Memory Extended Temperature Product FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Wide Temperature Operation : -25'C ~ +85'C • Organization - Memory Cell Array : (2M +64K) x 8 bit - Data Register
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KM29N16000ER
KM29N16000ET/R
264-byte
500ps
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TSOP2-400F
Abstract: CIRCUIT DIAGRAM OF 15 INCH SAMSUNG MONITOR NCC KY TSOP2-400 samsung capacitance Lot Code Identification
Text: KM29N16000 2M x 8 Bit NAND Flash Memory PRELIMINARY- June 1994 SEMICONDUCTOR FEATURES GENERAL DESCRIPTION • Single 5 - volt Supply • Organization - Memory Cell Array : 2M +64K x 8 - Data Register : (258 + 8) x 8 • Automatic Program and Erase - Page Program : (256 + 8)Byte
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KM29N16000
KM29N1600Q
-TSOP2-400F
-TSOP2-400R
7TL4142
00E10S0
TSOP2-400F
CIRCUIT DIAGRAM OF 15 INCH SAMSUNG MONITOR
NCC KY
TSOP2-400
samsung capacitance Lot Code Identification
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Untitled
Abstract: No abstract text available
Text: FLASH MEMORY KM29N16000ATS Document Title 2M X 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date 0.0 Data Sheet, 1997. April 10th 1997 1.0 Data Sheet, 1998. 1. Changed tBER S p a ra m e te r: 5ms Typ. —> 2ms(Typ.). 2. Removed reverse type package.
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KM29N16000ATS
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Untitled
Abstract: No abstract text available
Text: KM29N16000ETS/RS FLASH MEMORY 2M x 8 Bit NAND Flash Memory Extended Temperature Product FEATURES GENERAL DESCRIPTION • Single 5.0 - volt S upply T h e K M 2 9 N 1 6 0 0 0 E T S /R S is a 2 M (2 ,0 9 7 ,1 5 2 )x 8 b it • W ide Tem perature O peration : -25'C - +85'C
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KM29N16000ETS/RS
Figure14
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Untitled
Abstract: No abstract text available
Text: KM29N16000ET/R FLASH MEMORY 2M X 8 Bit NAND Flash Memory Extended Temperature Product FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply The K M 29N 16000E T/R is a 2M (2,09 7 ,1 5 2 )x8 b it N AND • W ide Tem perature O peration : -25'C - +85'C
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KM29N16000ET/R
16000E
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Untitled
Abstract: No abstract text available
Text: KM29N16000AR Fl ash ELECTRONICS 2Mx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization The KM29N16000AT/R is a 2M 2,097,152 x8 bit NAND Flash memory with a spare 64K(65,536)x8 bit. Its NAND cell provides the most cost-effective solution for the mass
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KM29N16000AR
KM29N16000AT/R
264-byte
250ps
GG314f
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D0241_S4
Abstract: No abstract text available
Text: KM29N16000ET/R FLASH MEMORY 2M x 8 Bit NAND Flash Memory Extended Temperature Product FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Wide Temperature Operation : -25'C - +85'C • Organization - Memory Cell Array : (2M +64K) x 8 bit - Data Register
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KM29N16000ET/R
00241b3
D0241_S4
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