55b2
Abstract: No abstract text available
Text: BUK9Y40-55B N-channel TrenchMOS logic level FET Rev. 02 — 11 April 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor FET in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology.
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55B3
Abstract: BUK9Y40-55B
Text: BUK9Y40-55B N-channel TrenchMOS logic level FET Rev. 03 — 22 February 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This
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Abstract: 03np80
Text: BUK9Y40-55B N-channel TrenchMOS logic level FET Rev. 01 — 28 May 2004 M3D748 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.
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Untitled
Abstract: No abstract text available
Text: BUK9Y40-55B N-channel TrenchMOS logic level FET Rev. 03 — 22 February 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This
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