Untitled
Abstract: No abstract text available
Text: New Product SiZ730DT Vishay Siliconix N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () ID (A) 0.0093 at VGS = 10 V 16a 0.0130 at VGS = 4.5 V 16a 0.0039 at VGS = 10 V 35a 0.0053 at VGS = 4.5 V 35a Qg (Typ.)
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SiZ730DT
2002/95/EC
SiZ730DT-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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234B
Abstract: No abstract text available
Text: New Product SiZ790DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () ID (A) 0.0093 at VGS = 10 V 16a 0.0130 at VGS = 4.5 V 16a 0.0047 at VGS = 10 V 35a 0.0059 at VGS = 4.5 V
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SiZ790DT
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
234B
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1N4007
Abstract: 1N4001 1N4002 1N4003 1N4004
Text: 1N4001 thru 1N4007 Axial Lead General Purpose Plastic Rectifier P b Lead Pb -Free Features: * The plastic package carries UnderWriters Laboratory Flammability Classification 94V-0 * Construction utilizes void-free molded plastic technique * Low reverse leakage
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1N4001
1N4007
DO-41
MIL-STD-750,
DO-41
50mVp-p
04-Aug-09
1N4007
1N4002
1N4003
1N4004
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AXP 188
Abstract: AXP 209 AXP 189 btp 128 550 TPSMP24A TPSMP33A btp 129 btp 128 BSP 324 tpsmp9.1a
Text: New Product TPSMP6.8 thru TPSMP43A Vishay General Semiconductor High Power Density Surface Mount Automotive Transient Voltage Suppressors FEATURES • Very low profile - typical height of 1.0 mm eSMP TM Series • Ideal for automated placement • Uni-direction only
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TPSMP43A
DO-220AA
J-STD-020,
AEC-Q101
18-Jul-08
AXP 188
AXP 209
AXP 189
btp 128 550
TPSMP24A
TPSMP33A
btp 129
btp 128
BSP 324
tpsmp9.1a
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DO-204AL
Abstract: J-STD-002 SB1H100 SB1H90
Text: New Product SB1H90, SB1H100 Vishay General Semiconductor High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • High barrier technology for improved high TJ • Guardring for overvoltage protection • Low power losses and high efficiency
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SB1H90,
SB1H100
DO-204AL
DO-41)
22-B106
AEC-Q101
2002/95/EC
2002/96/EC
18-Jul-08
DO-204AL
J-STD-002
SB1H100
SB1H90
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Untitled
Abstract: No abstract text available
Text: SiZ710DT Vishay Siliconix N-Channel 20 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 20 Channel-2 20 RDS(on) () ID (A) 0.0068 at VGS = 10 V 16a 0.0090 at VGS = 4.5 V 16a 0.0033 at VGS = 10 V 35a 0.0043 at VGS = 4.5 V 35a Qg (Typ.) 6.9 nC 18.2 nC
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SiZ710DT
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product SiZ700DT Vishay Siliconix N-Channel 20-V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 20 Channel-2 20 RDS(on) () ID (A) 0.0086 at VGS = 10 V 16a 0.0108 at VGS = 4.5 V 16a 0.0058 at VGS = 10 V 16a 0.0066 at VGS = 4.5 V 16a Qg (Typ.)
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SiZ700DT
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product SiZ730DT Vishay Siliconix N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () ID (A) 0.0093 at VGS = 10 V 16a 0.0130 at VGS = 4.5 V 16a 0.0039 at VGS = 10 V 35a 0.0053 at VGS = 4.5 V 35a Qg (Typ.)
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SiZ730DT
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: New Product SiZ790DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () ID (A) 0.0093 at VGS = 10 V 16a 0.0130 at VGS = 4.5 V 16a 0.0047 at VGS = 10 V 35a 0.0059 at VGS = 4.5 V
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SiZ790DT
2002/95/EC
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: New Product SB1H90, SB1H100 Vishay General Semiconductor High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • High barrier technology for improved high TJ • Guardring for overvoltage protection • Low power losses and high efficiency
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SB1H90,
SB1H100
DO-204AL
DO-41)
22-B106
AEC-Q101
2002/95/EC
2002/96/EC
2011/65/EU
2002/95/EC.
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Untitled
Abstract: No abstract text available
Text: W Vishay Dale NTC Thermistors, Surface Mount Chip FEATURES • • • • Top and bottom surface terminations High-density monolithic ceramic construction Allows design flexibility for use with hyprid circuitry Model W is a thermistor die with silver conductors fired on
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12W1004
12W5003
12Wany
18-Jul-08
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TFDU6300
Abstract: TFDU6300-TR3 TFDU6300-TT3 TFDU6301
Text: TFDU6300 Vishay Semiconductors Fast Infrared Transceiver Module FIR, 4 Mbit/s for 2.4 V to 3.6 V Operation FEATURES • Compliant to the latest IrDA physical layer specification (up to 4 Mbit/s) with an extended low power range of > 70 cm (typ. 1 m) and TV
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TFDU6300
TFDU6300
11-Mar-11
TFDU6300-TR3
TFDU6300-TT3
TFDU6301
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Untitled
Abstract: No abstract text available
Text: SiZ710DT Vishay Siliconix N-Channel 20 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 20 Channel-2 20 RDS(on) () ID (A) 0.0068 at VGS = 10 V 16a 0.0090 at VGS = 4.5 V 16a 0.0033 at VGS = 10 V 35a 0.0043 at VGS = 4.5 V 35a Qg (Typ.) 6.9 nC 18.2 nC
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SiZ710DT
2002/95/EC
SiZ710DT-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: New Product SiZ704DT Vishay Siliconix N-Channel 30-V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () ID (A) 0.0240 at VGS = 10 V 0.0300 at VGS = 4.5 V 0.0135 at VGS = 10 V 0.0170 at VGS = 4.5 V 12a 12a 16a 16a Qg (Typ.)
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SiZ704DT
2002/95/EC
SiZ704DT-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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J-STD-002
Abstract: SB3H100 SB3H90 jesd
Text: New Product SB3H90, SB3H100 Vishay General Semiconductor High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Low power losses and high efficiency • Low forward voltage drop
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SB3H90,
SB3H100
22-B106
DO-201AD
AEC-Q101
2002/95/EC
2002/96/EC
11-Mar-11
J-STD-002
SB3H100
SB3H90
jesd
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EGP10G
Abstract: DO-204AL EGP10A J-STD-002 EGP10B
Text: EGP10A thru EGP10G Vishay General Semiconductor Glass Passivated Ultrafast Rectifier FEATURES • Cavity-free glass-passivated junction • Ultrafast reverse recovery time • Low forward voltage drop • Low leakage current • Low switching losses, high efficiency
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EGP10A
EGP10G
22-B106
AEC-Q101
DO-204AL
DO-41)
2002/95/EC
2002/96/EC
18-Jul-08
EGP10G
DO-204AL
J-STD-002
EGP10B
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Untitled
Abstract: No abstract text available
Text: WTC2312 N-Channel Enhancement Mode Power MOSFET 3 DRAIN DRAIN CURRENT 4.9 AMPERES DRAIN SOUCE VOLTAGE 20 VOLTAGE P b Lead Pb -Free 1 GATE Features: * Super High Dense Cell Design For Low RDS(ON) RDS(ON)<41mΩ @VGS=4.5V RDS(ON)<47mΩ @VGS=2.5V RDS(ON)<57mΩ @VGS=1.8V
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WTC2312
OT-23
04-Aug-09
OT-23
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DO-204AC
Abstract: J-STD-002 SB2H100 SB2H90
Text: New Product SB2H90, SB2H100 Vishay General Semiconductor High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Guardring for overvoltage protection • Low power losses and high efficiency • Low forward voltage drop
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SB2H90,
SB2H100
DO-204AC
DO-15)
22-B106
AEC-Q101
2002/95/EC
2002/96/EC
18-Jul-08
DO-204AC
J-STD-002
SB2H100
SB2H90
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Untitled
Abstract: No abstract text available
Text: New Product SiZ728DT Vishay Siliconix N-Channel 25 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 25 Channel-2 25 RDS(on) () ID (A) 0.0077 at VGS = 10 V 16a 0.0110 at VGS = 4.5 V 16a 0.0035 at VGS = 10 V 35a 0.0048 at VGS = 4.5 V 35a Qg (Typ.)
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SiZ728DT
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product SiZ702DT Vishay Siliconix N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 and Channel-2 30 RDS(on) () ID (A) 0.0120 at VGS = 10 V 16a 0.0145 at VGS = 4.5 V 16a Qg (Typ.) 6.8 nC • Halogen-free According to IEC 61249-2-21
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SiZ702DT
2002/95/EC
SiZ702DT-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: TFDU6300 Vishay Semiconductors Fast Infrared Transceiver Module FIR, 4 Mbit/s for 2.4 V to 3.6 V Operation FEATURES • Compliant to the latest IrDA physical layer specification (up to 4 Mbit/s) with an extended low power range of > 70 cm (typ. 1 m) and TV
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Original
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TFDU6300
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SiZ720DT Vishay Siliconix N-Channel 20-V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 20 Channel-2 20 RDS(on) () ID (A) 0.0087 at VGS = 10 V 16a 0.0115 at VGS = 4.5 V 16a 0.0062 at VGS = 10 V 16a 0.0080 at VGS = 4.5 V 16a Qg (Typ.) 7.3 nC 21 nC
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SiZ720DT
2002/95/EC
SiZ720DT-T1-GE3
11-Mar-11
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31-5900
Abstract: No abstract text available
Text: NOTES: 1. MATERIALS AND FINISHES PLATING THICKNESS IN MICRO-INCHES : BODY - ZINC DIECAST, NICKEL PLATING CONTACT - BRASS, GOLD PLATING INSULATOR - PTFE & T.P.X, NATURAL & WHITE 2. ELECTRICAL: A. IMPEDANCE: 50 OHM B. FREQUENCY RANGE: DC 0 - 4 GHz C. DIELECTRIC WITHSTANDING VOLTAGE:
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RG--59
\DWG\CNPD\31
5900-HSZ
31-5900
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Untitled
Abstract: No abstract text available
Text: T H I S D R A W I NG I S U N P U B L I S H E D . C O P Y R I G HT 2009 R E L E A S E D RO R P U B L I C A T I ON BY TYCO ELECTRONICS CORPORATION ALL R IG HTS LOC R E V I S I ONS D I ST RESERVED. D E S C R I P T ION BA N E W R EL E AS E 04-AUG-09 T E R M I N A L W R A P A R O U N D A P P R O X 0 . 0 0 7 " 0 . 1 8 m m BOTH E NDS
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04-AUG-09
A0G-09
04-A00-09
04-A0G-09
IMAR2000
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