Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiZ730DT www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiZ730DT
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: New Product SiZ730DT Vishay Siliconix N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () ID (A) 0.0093 at VGS = 10 V 16a 0.0130 at VGS = 4.5 V 16a 0.0039 at VGS = 10 V 35a 0.0053 at VGS = 4.5 V 35a Qg (Typ.)
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SiZ730DT
2002/95/EC
SiZ730DT-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: New Product SiZ730DT Vishay Siliconix N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () ID (A) 0.0093 at VGS = 10 V 16a 0.0130 at VGS = 4.5 V 16a 0.0039 at VGS = 10 V 35a 0.0053 at VGS = 4.5 V 35a Qg (Typ.)
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SiZ730DT
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: New Product SiZ730DT Vishay Siliconix N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () ID (A) 0.0093 at VGS = 10 V 16a 0.0130 at VGS = 4.5 V 16a 0.0039 at VGS = 10 V 35a 0.0053 at VGS = 4.5 V 35a Qg (Typ.)
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SiZ730DT
2002/95/EC
SiZ730DT-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: SiZ730DT_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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SiZ730DT
AN609,
31-Mar-11
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Untitled
Abstract: No abstract text available
Text: New Product SiZ730DT Vishay Siliconix N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () ID (A) 0.0093 at VGS = 10 V 16a 0.0130 at VGS = 4.5 V 16a 0.0039 at VGS = 10 V 35a 0.0053 at VGS = 4.5 V 35a Qg (Typ.)
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SiZ730DT
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product SiZ730DT Vishay Siliconix N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) (Ω) ID (A) 0.0093 at VGS = 10 V 16a 0.0130 at VGS = 4.5 V 16a 0.0039 at VGS = 10 V 35a 0.0053 at VGS = 4.5 V 35a • Halogen-free According to IEC 61249-2-21
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SiZ730DT
2002/95/EC
11-Mar-11
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DG9454
Abstract: No abstract text available
Text: Vishay Intertechnology, Inc. SUPER 12 Featured Products version 3.0 www.vishay.com/landingpage/super12/ver3 S12 Super 12 Featured Products 146 CTI SMD Chip Polarized Aluminum Capacitor High temperature up to + 125 °C , low impedance (down to 35 mΩ), AEC-Q200 qualified
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com/landingpage/super12/ver3
AEC-Q200
SiR662DP
-6767GZ-51
VMN-MS6559-1102
DG9454
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Untitled
Abstract: No abstract text available
Text: Vishay Intertechnology, Inc. P owerPAIR MOSFET s PowerPAIR 3 x 3 Provides Best Efficiency in the Industry in Compatible 3 x 3 Footprints PowerPAIR 6 x 3.7 26 % Smaller with Comparable Performance to a 6 x 5 mm2 Device PowerPAIR 6 x 5 Achieves High Efficiency in
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SiZ340DT
SiZ342DT
VMN-MS6927-1406
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sir158
Abstract: q113 SiZ340DT SiR158DP N3X3
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - High- and Low-Side MOSFETs in One Compact Package AND TEC I INNOVAT O L OGY PowerPAIR N HN POWER MOSFETs O 19 62-2012 Co-Packaged MOSFETs Reduce Space, Increase Performance Over Two Discretes KEY BENEFITS
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SiZ790DT
SiZ914DT
VMN-PT0182-1209
sir158
q113
SiZ340DT
SiR158DP
N3X3
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si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®
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Mediu33-4-9337-2727
VMN-SG2127-1210
si7121
Si4914B
SI-4102
SI4599
Si4483A
sir166
irfd120
si7949
si4459a
SIR836
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Untitled
Abstract: No abstract text available
Text: V i s h ay I n t e r t e c h n o l o g y, I n c . Power MOSFETs MOSFETs - High- and Low-Side MOSFETs in One Compact Package PowerPAIR Co-Packaged MOSFETs Reduce Space, Increase Performance Over Two Discretes Key Benefits APPLICATIONS • High- and low-side MOSFETs in one
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SiZ790DT
SiZ914DT
VMN-PT0182-1402
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