DIODE D100 to220
Abstract: No abstract text available
Text: IPB051NE8N G 05CNE8N G IPP054NE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO 263) 5.1 mΩ ID 100 A • Very low on-resistance R DS(on)
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IPB051NE8N
IPI05CNE8N
IPP054NE8N
PG-TO263-3
051NE8N
PG-TO262-3
05CNE8N
DIODE D100 to220
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051NE8N
Abstract: 054NE8N IEC61249-2-21 IPP054NE8N PG-TO220-3
Text: IPB051NE8N G 05CNE8N G IPP054NE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO 263) 5.1 mΩ ID 100 A • Very low on-resistance R DS(on)
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Original
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PDF
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IPB051NE8N
IPI05CNE8N
IPP054NE8N
IEC61249-2-21
PG-TO263-3
PG-TO262-3
PG-TO220-3
051NE8N
054NE8N
IEC61249-2-21
PG-TO220-3
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051ne8n
Abstract: 054NE8N 05CNE8N IPB051NE8NG IPP054NE8N PG-TO220-3 IPI05CNE8NG
Text: IPB051NE8N G 05CNE8N G IPP054NE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO 263) 5.1 mΩ ID 100 A • Very low on-resistance R DS(on)
|
Original
|
PDF
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IPB051NE8N
IPI05CNE8N
IPP054NE8N
PG-TO263-3
PG-TO262-3
PG-TO220-3
051NE8N
051ne8n
054NE8N
05CNE8N
IPB051NE8NG
PG-TO220-3
IPI05CNE8NG
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051ne8n
Abstract: IPP054NE8N PG-TO220-3
Text: IPB051NE8N G 05CNE8N G IPP054NE8N G OptiMOS 2 Power-Transistor Product Summary Features V DS 85 V • N-channel, normal level R DS on ,max (TO 263) 5.1 m: ID 100 A • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature
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Original
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PDF
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IPB051NE8N
IPI05CNE8N
IPP054NE8N
PG-TO263-3
PG-TO262-3
PG-TO220-3
051NE8N
051ne8n
PG-TO220-3
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