3-1827158-8
Abstract: plastic cap for packaging
Text: 107-68622 Packaging Specification 08Mar10 Rev C 1.25 FP CONNECTOR B-TO-B ON TAPING 1. PURPOSE 目的 Define the packaging specifiction and packaging method of 1.25 FP CONNECTOR(B-TO-B)ON TAPING. 订定 1.25 FP CONNECTOR(B-TO-B)ON TAPING 产品之包装规格及包装方式。
|
Original
|
PDF
|
08Mar10
QR-ME-030B
3-1827158-8
plastic cap for packaging
|
1206-8 chipfet
Abstract: Vishay DaTE CODE 1206-8 si5903dc si5903dc-t1-e3
Text: Si5903DC Vishay Siliconix Dual P-Channel 2.5 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.155 at VGS = - 4.5 V ± 2.9 - 20 0.180 at VGS = - 3.6 V ± 2.7 0.260 at VGS = - 2.5 V ± 2.2 • Halogen-free According to IEC 61249-2-21 Definition
|
Original
|
PDF
|
Si5903DC
2002/95/EC
Si5903DC-T1-E3
Si5903DC-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
1206-8 chipfet
Vishay DaTE CODE 1206-8
|
marking code g1
Abstract: mil 43
Text: Si5515CDC Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel ID (A)a Qg (Typ.) RDS(on) (Ω) - 20 0.036 at VGS = 4.5 V 4g 0.041 at VGS = 2.5 V 4g g 0.050 at VGS = 1.8 V 4 0.100 at VGS = - 4.5 V - 4g 0.120 at VGS = - 2.5 V
|
Original
|
PDF
|
Si5515CDC
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
marking code g1
mil 43
|
Untitled
Abstract: No abstract text available
Text: New Product Si2377EDS Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)a 0.061 at VGS = - 4.5 V - 4.4 0.080 at VGS = - 2.5 V - 3.8 0.110 at VGS = - 1.8 V - 3.3 0.165 at VGS = - 1.5 V - 0.5 Qg (Typ.) 7.6 nC
|
Original
|
PDF
|
Si2377EDS
2002/95/EC
O-236
OT-23)
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
Si5904DC-T1-GE3
Abstract: Si5904DC
Text: Si5904DC Vishay Siliconix Dual N-Channel 2.5 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.075 at VGS = 4.5 V ± 4.2 0.134 at VGS = 2.5 V ± 3.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET: 2.5 V Rated
|
Original
|
PDF
|
Si5904DC
2002/95/EC
Si5904DC-T1-E3
Si5904DC-T1-GE3
18-Jul-08
|
AN609
Abstract: sud09p10
Text: SUD09P10-195_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
|
Original
|
PDF
|
SUD09P10-195
AN609,
08-Mar-10
AN609
sud09p10
|
Si5908DC-T1-E3
Abstract: SI5908DC-T1-GE3
Text: Si5908DC Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.040 at VGS = 4.5 V 5.9 20 0.045 at VGS = 2.5 V 5.6 0.052 at VGS = 1.8 V 5.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs
|
Original
|
PDF
|
Si5908DC
2002/95/EC
Si5908DC-T1-E3
18-Jul-08
SI5908DC-T1-GE3
|
Untitled
Abstract: No abstract text available
Text: Si5920DC Vishay Siliconix Dual N-Channel 1.5 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 RDS(on) (Ω) ID (A) 0.032 at VGS = 4.5 V 4a 0.036 at VGS = 2.5 V 4a 0.045 at VGS = 1.8 V 4a 0.054 at VGS = 1.5 V 4a Qg (Typ.) 7.3 nC • Halogen-free According to IEC 61249-2-21
|
Original
|
PDF
|
Si5920DC
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Si5915BDC
Abstract: UA712
Text: Si5915BDC Vishay Siliconix Dual P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.070 at VGS = - 4.5 V 4a 0.086 at VGS = - 2.5 V 4a 0.145 at VGS = - 1.8 V 3.6 Qg (Typ.) 5 nC • Halogen-free According to IEC 61249-2-21 Definition
|
Original
|
PDF
|
Si5915BDC
2002/95/EC
18-Jul-08
UA712
|
Si5853DC-T1-GE3
Abstract: Si5853DC
Text: Si5853DC Vishay Siliconix P-Channel 1.8 V G-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.110 at VGS = - 4.5 V - 3.6 - 20 0.160 at VGS = - 2.5 V - 3.0 0.240 at VGS = - 1.8 V - 2.4 • Halogen-free According to IEC 61249-2-21
|
Original
|
PDF
|
Si5853DC
2002/95/EC
Si5853DC-T1-E3
Si5853DC-T1-GE3
18-Jul-08
|
A84 marking code
Abstract: AXH marking AXH 2510
Text: V I S H AY I N T E R T E C H N O L O GY, I N C . INTERACTIVE data book LOW VOLTAGE POWER CAPACITORS ViShAy ESTA Notes: 1. To navigate: a Click on the Vishay logo in any document to go to the overview page. b) Click on the document name within the overview to go directly to the
|
Original
|
PDF
|
VSE-DB0052-1403
A84 marking code
AXH marking
AXH 2510
|
Si5513DC
Abstract: Si5513DC-T1-E3
Text: Si5513DC Vishay Siliconix Complementary 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) 0.075 at VGS = 4.5 V 4.2 0.134 at VGS = 2.5 V 3.1 0.155 at VGS = - 4.5 V - 2.9 0.260 at VGS = - 2.5 V - 2.2 • Halogen-free According to IEC 61249-2-21
|
Original
|
PDF
|
Si5513DC
2002/95/EC
Si5513DC-T1-E3
Si5513DC-T1-GE3
11-Mar-11
|
Untitled
Abstract: No abstract text available
Text: Si5515CDC Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel ID (A)a Qg (Typ.) RDS(on) (Ω) - 20 0.036 at VGS = 4.5 V 4g 0.041 at VGS = 2.5 V 4g g 0.050 at VGS = 1.8 V 4 0.100 at VGS = - 4.5 V - 4g 0.120 at VGS = - 2.5 V
|
Original
|
PDF
|
Si5515CDC
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: Si5515DC Vishay Siliconix Complementary 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.040 at VGS = 4.5 V 5.9 20 0.045 at VGS = 2.5 V 5.6 N-Channel P-Channel - 20 0.052 at VGS = 1.8 V 5.2 0.086 at VGS = - 4.5 V - 4.1 0.121 at VGS = - 2.5 V
|
Original
|
PDF
|
Si5515DC
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
|
|
Untitled
Abstract: No abstract text available
Text: Si5515DC Vishay Siliconix Complementary 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.040 at VGS = 4.5 V 5.9 20 0.045 at VGS = 2.5 V 5.6 N-Channel P-Channel - 20 0.052 at VGS = 1.8 V 5.2 0.086 at VGS = - 4.5 V - 4.1 0.121 at VGS = - 2.5 V
|
Original
|
PDF
|
Si5515DC
2002/95/EC
Si5515DC-T1-E3
11-Mar-11
|
marking code ED
Abstract: No abstract text available
Text: Si5509DC Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.052 at VGS = 4.5 V 6.1a 0.084 at VGS = 2.5 V 4.8a 0.090 at VGS = - 4.5 V - 4.8a 0.160 at VGS = - 2.5 V
|
Original
|
PDF
|
Si5509DC
2002/95/EC
Si5509DC-T1-E3
Si5509DC-T1-GE3
11-Mar-11
marking code ED
|
Untitled
Abstract: No abstract text available
Text: Si5903DC Vishay Siliconix Dual P-Channel 2.5 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.155 at VGS = - 4.5 V ± 2.9 - 20 0.180 at VGS = - 3.6 V ± 2.7 0.260 at VGS = - 2.5 V ± 2.2 • Halogen-free According to IEC 61249-2-21 Definition
|
Original
|
PDF
|
Si5903DC
2002/95/EC
Si5903DC-T1-E3
Si5903DC-T1-GE3
11-Mar-11
|
Untitled
Abstract: No abstract text available
Text: Si7402DN Vishay Siliconix N-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.0057 at VGS = 4.5 V 20 12 0.0067 at VGS = 2.5 V 18.8 0.0085 at VGS = 1.8 V 16.5 PowerPAK 1212-8 APPLICATIONS S 3.30 mm • PA Switch, Load Switch and Battery Switch for Portable
|
Original
|
PDF
|
Si7402DN
2002/95/EC
Si7402DN-T1-E3
Si7402DN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
Untitled
Abstract: No abstract text available
Text: Si5513CDC Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A)a Qg (Typ.) 0.055 at VGS = 4.5 V 4g 0.085 at VGS = 2.5 V 4g 0.150 at VGS = - 4.5 V - 3.7 0.255 at VGS = - 2.5 V - 2.9
|
Original
|
PDF
|
Si5513CDC
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
Untitled
Abstract: No abstract text available
Text: Si8499DB Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)e RDS(on) (Ω) - 20 0.032 at VGS = - 4.5 V - 16 0.046 at VGS = - 2.5 V - 14.3 0.065 at VGS = - 2.0 V - 12 0.120 at VGS = - 1.8 V - 2.5 Qg (Typ.) 14.5 nC • Halogen-free According to IEC 61249-2-21
|
Original
|
PDF
|
Si8499DB
2002/95/EC
18-Jul-08
|
Untitled
Abstract: No abstract text available
Text: Si5515CDC Vishay Siliconix N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel ID (A)a Qg (Typ.) RDS(on) (Ω) - 20 0.036 at VGS = 4.5 V 4g 0.041 at VGS = 2.5 V 4g g 0.050 at VGS = 1.8 V 4 0.100 at VGS = - 4.5 V - 4g 0.120 at VGS = - 2.5 V
|
Original
|
PDF
|
Si5515CDC
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
Untitled
Abstract: No abstract text available
Text: Si5913DC Vishay Siliconix P-Channel 20 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a 0.084 at VGS = - 10 V - 4f - 20 0.108 at VGS = - 4.5 V - 4f - 3.5 0.175 at VGS = - 2.5 V Qg (Typ.) 4 nC • Halogen-free According to IEC 61249-2-21
|
Original
|
PDF
|
Si5913DC
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
Untitled
Abstract: No abstract text available
Text: Si5853DDC Vishay Siliconix P-Channel 20 V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.105 at VGS = - 4.5 V - 4a 0.143 at VGS = - 2.5 V - 3.8 0.188 at VGS = - 1.8 V -3 • Halogen-free According to IEC 61249-2-21
|
Original
|
PDF
|
Si5853DDC
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
B103
Abstract: B152 B545 MIL-T-7928 ASTM-B103 astm b103
Text: 4 T H IS D R AW IN G IS U N P U B L IS H E D . CO PYR IG H T 2 R E LE A S E D FO R PU B LIC A TIO N BY ^ C O ELEC TR O N IC S CO RPO RATIO N . R E V IS IO N S G ALL INTERNATIONAL RIGHTS R ESERVED . LTR D E S C R IP T IO N REV PER ECR 1 0 - 0 0 5 1 0 7 D DATE
|
OCR Scan
|
PDF
|
08MAR10
MIL-T-7928
B103
B152
B545
ASTM-B103
astm b103
|