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    SI2377EDS Price and Stock

    Vishay Intertechnologies SI2377EDS-T1-BE3

    P-CHANNEL 20-V (D-S) MOSFET - Tape and Reel (Alt: SI2377EDS-T1-BE3)
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    Avnet Americas SI2377EDS-T1-BE3 Reel 20 Weeks 3,000
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    Mouser Electronics SI2377EDS-T1-BE3 20,600
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    Newark SI2377EDS-T1-BE3 Bulk 3,000
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    TTI SI2377EDS-T1-BE3 Reel 6,000 3,000
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    Vishay Intertechnologies SI2377EDS-T1-GE3

    P-CHANNEL 20-V (D-S) MOSFET - Tape and Reel (Alt: SI2377EDS-T1-GE3)
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    Avnet Americas SI2377EDS-T1-GE3 Reel 20 Weeks 3,000
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    Mouser Electronics SI2377EDS-T1-GE3 18,265
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    Newark SI2377EDS-T1-GE3 Reel 3,000
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    SI2377EDS-T1-GE3 Cut Tape 5
    • 1 $0.45
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    TTI SI2377EDS-T1-GE3 Reel 3,000
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    TME SI2377EDS-T1-GE3 2,880 3
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    Chip 1 Exchange SI2377EDS-T1-GE3 19,500
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    Chip1Stop SI2377EDS-T1-GE3 3,000
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    EBV Elektronik SI2377EDS-T1-GE3 21 Weeks 3,000
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    Wuhan P&S SI2377EDS-T1-GE3 12,000 1
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    Vishay Siliconix SI2377EDS-T1-GE3

    SI2377EDS-T1-GE3 P-channel MOSFET Transistor, 3.5 A, 20 V, 3-Pin TO-236 | Siliconix / Vishay SI2377EDS-T1-GE3
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    RS SI2377EDS-T1-GE3 Bulk 20
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    New Advantage Corporation SI2377EDS-T1-GE3 24,000 1
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    Vishay Intertechnologies SI2377EDST1GE3

    P-CHANNEL 20 V (D-S) MOSFET Small Signal Field-Effect Transistor, 4.4A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
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    ComSIT USA SI2377EDST1GE3 1,610
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    Vishay Huntington SI2377EDS-T1-GE3

    Trans MOSFET P-CH 20V 4.4A 3-Pin SOT-23 T/R / MOSFET P-CH 20V 4.4A SOT-23
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    Win Source Electronics SI2377EDS-T1-GE3 19,100
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    • 1000 $0.566
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    SI2377EDS Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI2377EDS-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 4.4A SOT-23 Original PDF

    SI2377EDS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: New Product Si2377EDS Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)a 0.061 at VGS = - 4.5 V - 4.4 0.080 at VGS = - 2.5 V - 3.8 0.110 at VGS = - 1.8 V - 3.3 0.165 at VGS = - 1.5 V - 0.5 Qg (Typ.) 7.6 nC


    Original     		PDF Si2377EDS 2002/95/EC O-236 OT-23) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    si2377eds-t1-ge3

    Abstract: Si2377EDS 0542 si2377 SI2377eds-t1 SI237 P6 marking
    Text: New Product Si2377EDS Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)a 0.061 at VGS = - 4.5 V - 4.4 0.080 at VGS = - 2.5 V - 3.8 0.110 at VGS = - 1.8 V - 3.3 0.165 at VGS = - 1.5 V - 0.5 Qg (Typ.) 7.6 nC


    Original     		PDF Si2377EDS 2002/95/EC O-236 OT-23) Si2377EDS-T1-GE3lectual 18-Jul-08 si2377eds-t1-ge3 0542 si2377 SI2377eds-t1 SI237 P6 marking

    Untitled

    Abstract: No abstract text available
    Text: New Product Si2377EDS Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.061 at VGS = - 4.5 V - 4.4 VDS (V) - 20 0.080 at VGS = - 2.5 V - 3.8 0.110 at VGS = - 1.8 V - 3.3 0.165 at VGS = - 1.5 V - 0.5 Qg (Typ.) 7.6 nC


    Original     		PDF Si2377EDS 2002/95/EC O-236 OT-23) 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si2377EDS www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si2377EDS 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    transistor c 6093

    Abstract: transistor 5586 AN609 Si2377EDS
    Text: Si2377EDS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF Si2377EDS AN609, 02-Mar-10 transistor c 6093 transistor 5586 AN609

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836