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    0Q172 Search Results

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    0Q172 Price and Stock

    ROHM Semiconductor ML610Q172-NNNGAZWAX

    IC MCU 8BIT 128KB FLASH 64QFP
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    DigiKey ML610Q172-NNNGAZWAX Tray
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    Lenovo GX40Q17229

    15.6 Toploader T210 Black-ROW
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    NAC GX40Q17229 1,771 1
    • 1 $14.91
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    Neutron USA GX40Q17229 50
    • 1 $18.99
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    Lenovo GX40Q17225

    15.6 Backpack B210 Black-ROW
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    NAC GX40Q17225 436 1
    • 1 $16.4
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    Neutron USA GX40Q17225 50
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    Lenovo GX40Q17231

    15.6 Toploader T210 Grey-ROW
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    NAC GX40Q17231 226 1
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    Neutron USA GX40Q17231 400
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    Lenovo GX40Q17227

    15.6 Backpack B210 Grey-ROW
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    NAC GX40Q17227 223 1
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    Neutron USA GX40Q17227 50
    • 1 $22.99
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    0Q172 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    hr2399

    Abstract: 7 segment display duplex led type TLR2399 TLR4363 TLR2369 TLR4393
    Text: j i~J TOITSSO TOSHIBA {D IS CRETE /OPT O} 99D 17284 9097250 TOSHIBA DISCRETE/OPTO) 0Q172ai DT-HI-B3 TLR2399, TLR4393, TLR2369, TLR4363 RED COLOR 4 DIGITS LED DISPLAY . For Duplex Drive connection • 18 mi (0.7") character height« each segment represents diffused and uniformly


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    PDF 0Q175Ã DT-41-B3 TLR2399, TLR4393, TLR2369, TLR4363 03HWH HR2399 TLR2369 TLR4393 7 segment display duplex led type TLR2399 TLR4363 TLR2369

    Untitled

    Abstract: No abstract text available
    Text: blE ]> • bEM^flES 0Q1727D BbT ■ M I T I MITSUBISHI LSIs M5M5258P, J-35, -45, -55 2 6 2 1 4 4 -B IT 6 5 5 3 6 -W O R D BY 4 -B IT CMOS STATIC RAM MITSUBISHI ( HEPIORY/ASIC ) DESCRIPTION The M 5M 5258 is a fa m ily o f 65536 w ord by 4 -b it static RAMs, fabricated w ith the high-performance CMOS silicon-


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    PDF 0Q1727D M5M5258P, M5M5258P.

    BA 5053

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER MODULE bSMTôÉ?1} 0Q17273 l t a - - h bTa " M57788L 400-430MHZ, 12.5V, 40W, FM MOBILE RADIO OUTLINE DRAWING Dimansions in mm BLOCK DIAGRAM > © hK >M > hhi> PIN : Pin : RF INPUT @VCC1 : 1st. DC SUPPLY @VCC2 : 2nd. DC SUPPLY 0VCC3 : 3rd. DC SUPPLY


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    PDF 0Q17273 M57788L 400-430MHZ, 430MHz BA 5053

    M57786EL

    Abstract: No abstract text available
    Text: 0Q1725Ö 3 e] ! • MITSUBISHI RF POWER MODULE M57786EL 300-330MHZ, 7.2V, 6W, FM PORTABLE RADIO BLOCK DIAGRAM Dimensions in mm OUTLINE DRAWING PIN : ©Pin ©VCCI VBB ®VCC2 ®P0 ®GND : RF INPUT : 1st. DC SUPPLY : BASE BIAS SUPPLY : 2nd. DC SUPPLY : RF OUTPUT


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    PDF 0Q1725Ã M57786EL 300-330MHZ, M57786EL

    A254735

    Abstract: TP2010L TP201 TP241 TP2410L
    Text: SILICONIX INC SûE t • 0254735 0Q1727Û TP2010L, TP2410L P-Channel Enhancement-Mode MOS Transistors 7tlb ■ SIX fTSEconix in c o r p o r a te d 'T* vi-zs PRODUCT SUMMARY TO-92 TO-226AA V (BR)DSS PART NUMBER BOTTOM VIEW ■d (A) '" s r TP2010L -200 10


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    PDF A254735 QQ1727Ã TP201 TP241 TP2010L TP2410L VPDV24 O-226AA) TP2410L

    Untitled

    Abstract: No abstract text available
    Text: 35E D • A23b320 0Q172Ô4 2 « S I P PNP Silicon Darlington transistors SMBTA 63 SIEMENS/ SPCL, SEMICONDS SM BTA64 High collector current High DC current gain Type Marking Ordering code or versions in bulk Ordering code for versions on 8 mm-tape Package


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    PDF A23b320 0Q172Ã BTA64 Q68000-A6419 Q68000-A6420 Q68000-A2625 Q68000-A2485 23b320 SMBTA64

    atm with an eye block diagram

    Abstract: fabry perot 155 source
    Text: wgm H E W L E T T mLfiM P A C K A R D SC D uplex Single M ode Transceiver Technical Data FDX1125 Features Description • SC Duplex Single Mode Transceiver • Singe +5 Volt Power Supply • Multisourced 1 x 9 Pin Configuration • Aqueous Washable Plastic


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    PDF FDX1125 HFBR-5103 825/CDRH SDX1155B FDX1125* FDX1125B FDX1125D atm with an eye block diagram fabry perot 155 source

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet May 1995 S t AT&T r Microelectronics DSP1610 Signal Coding Digital Signal Processor 1 Features 2 Description • 25 ns or 33 ns instruction cycle ■ 512 word boot ROM, and 4 Kword or 8 Kword downloadable dual-port RAM on-chip ■ Low-power (15 mW/MIPS typical)


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    PDF DSP1610 16-bit 36-bit 005002b DSP1610 132-Pin 00SD02b G0173QD

    Untitled

    Abstract: No abstract text available
    Text: b 2 4 c] f l2 cì DD1 7 2 SS bö2 • MITSUBISHI RF POWER MODULE M57785H 162-175MHz, 7.2V, 7W, FM PORTABLE RADIO OUTLINE DRAWING Dimensions in mm 4 5 ± 0 .5 42 ± 1 2 - R 1 . 6 ± 0 .5 z : ¥ — - ■€ 1/1 o +1 3 © ji 0.4 ± 0.2 PIN : 5±1 9+ 1 * -


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    PDF M57785H 162-175MHz, 0Q17257 50rnW

    Untitled

    Abstract: No abstract text available
    Text: 35E D • fl23b32Q GG1722S ö M S I P PNP Silicon Switching Transistors SIEM ENS/ S P C L i • • • SMBT2907 SEMIC0N] S ' High DC current gain: 0.1 to 500 mA Low collector-emitter saturation voltage Complementary types: SMBT 2222, SMBT 2222 A NPN) C Type


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    PDF fl23b32Q GG1722S SMBT2907 Q68000-A4336 Q68000-A4337 Q68000-A6501 Q68000-A6474 1/CE-20V 23b32Q A23b32G

    NEC 1701c

    Abstract: b562ac NEC 1704c d1704c uPD1709CT SE-1700 LM 1709 cn UPD1709C IC 1709 CN b562a
    Text: N E C ELECTRONICS INC IB DE|l.Ha75BS 0017156 8 I MOS DIGITAL INTEGRATED CIRCUIT /¿ P D 1 7 0 9 C T S IN G L E -C H IP M IC R O C O M P U T E R IN C O R P O R A T IN G LED D R IV E R and P LL F R E Q U E N C Y S Y N T H E S IZ E R The |iPD1709C T is a 4 -b it CMOS m icrocom puter fo r digital tuning, containing PLL and co ntroller in one chip


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    PDF Ha75BS uPD1709CT 28-pin J22686 --85P NEC 1701c b562ac NEC 1704c d1704c SE-1700 LM 1709 cn UPD1709C IC 1709 CN b562a

    Untitled

    Abstract: No abstract text available
    Text: DS2407 DALLAS SEMICONDUCTOR DS2407 Dual Addressable Switch Plus 1K—Bit Memory FEATURES PIN ASSIGNM ENT • Open drain PIO pins are controlled and their logic level can be determined over 1 -W ire bus for closed-loop control TO-92 TSOC PACKAGE DALLAS


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    PDF DS2407 DS2407s Ebl4130 0D17Efc

    bb 9790 schematic diagram

    Abstract: DIGITAL GATE EMULATOR USING 8085 TDA 1006 equivalents ami equivalent gates verilog code motor 04S75 M6845 TDB 2915 KM AMI8G34S AMI8G28S
    Text: Libraiy Characteristics AMERICAN MICROSYSTEMS INC. AMI8G 0.8 micron CMOS Gale Array AMI’s “AMI8Gx” series of 0.8|im gate arrays exploits a proprietary power grid and track routing architecture on a compact, channelless, sea-of-gates design to provide one


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    PDF 32-bits. MG65C02, MG29C01, MG29C10, MG80C85, MG82Cxx, MGMC51 Q172SÖ AMI86 DD17SbD bb 9790 schematic diagram DIGITAL GATE EMULATOR USING 8085 TDA 1006 equivalents ami equivalent gates verilog code motor 04S75 M6845 TDB 2915 KM AMI8G34S AMI8G28S

    Untitled

    Abstract: No abstract text available
    Text: DS2404 DALLAS SEMICONDUCTOR DS2404 EconoRAM Time Chip FEATURES PIN ASSIGNMENT • 4096 bits of nonvolatile dual-port memory including real time clock/calendar in binary format, program­ mable interval timer, and programmable power-on cycle counter vccnn 1


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    PDF DS2404 64-bit 48-bit D017221 2bl4130

    Untitled

    Abstract: No abstract text available
    Text: MT4C16270 256K X 16 DRAM MICRON I TECHNOLOGY. INC. 256K x 16 DRAM DRAM 5V, EDO PAGE MODE FEATURES PIN ASSIGNMENT Top View • Industry-standard x l6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply*


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    PDF MT4C16270 300mW 512-cycle 40-Pin

    SD412

    Abstract: No abstract text available
    Text: INTERNATIONAL RECTIFIER b5E D • MflSS4SE G017E7S 35b PD-2.328 International S Rectifier SD41 SCHOTTKY RECTIFIER 30 Amp Major Ratings and Characteristics Description/Features Characteristics SD41 Units 'f AV Roctan9ular waveform 30 A 35/45 V A V RWM The SD41 Schottky rectifier has been optimized for very low


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    PDF G017E7S SD412

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN*5609A CMOS 1C LC374100SM, ST 4 MEG 524288 wordsx 8 bits Mask ROM Internal Clocked Silicon Gate Preliminary Overview Package Dimensions The LC374100SM and LC374100ST are 524,288-word x 8-bit organization (4,194,304-bit) mask programmable


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    PDF LC374100SM, LC374100SM LC374100ST 288-word 304-bit) 100-ns 200-ns 3205-SOP32

    Untitled

    Abstract: No abstract text available
    Text: 32E ÔE3b320 T> DG17207 b m S I P PZTA 42; P Z TA 43 NPN Silicon High-Voltage Transistors SIEM EN S/ SPCL-, SEM ICONDS T - - 5 3 -3 -1 • High breakdown voltage • Low collector -emitter saturation voltage • Complementary types: PZTA 92/93 PNP Marking


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    PDF E3b320 DG17207 12-mm Q62702- Z2035 OT-223 Q62702-Z2036 0Q1721Q T-33-29

    darm

    Abstract: LM 327 CN MSM6688 MSM6788 MSM6791 0017H1S
    Text: O K I Semiconductor MSM6791 DRAM INTERFACE LSI GENERAL DESCRIPTION MSM6791 can be u sed as a m em ory for w hich DRAM stores a voice data b y connecting OKI solid state recording and playback LSIs MSM6788 and MSM6688 . FEATURES • DRAM (x 1-bit configuration)


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    PDF MSM6791 MSM6791 MSM6788 MSM6688) MSM511000A, MSM511001A) MSM514100A, MSM514101A) 16M-bit MSM5116100) darm LM 327 CN MSM6688 0017H1S

    Untitled

    Abstract: No abstract text available
    Text: Transistors General Purpose Transistor Isolated Dual Transistors UMZ1N/ IMZ1A •F e a tu re s 1) B o th • E x te r n a l dim ensions (Units: mm ) 2SA1037AK c h ip and 2 S C 2 4 1 Z K chip in U M T a n d S M T IMZ1A UMZ1N 2.0 ± 0.2 2) 0 .9 ± 0 .1 1 .9 ± 0 .2


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    PDF 2SA1037AK 0Dlb713 O-220FN O-220FN O220FP T0-220FP, O-220FP. 7020c

    STATIC RAM 6264

    Abstract: ram 6264 Hyundai Semiconductor 6264 Hyundai 6264 DD172 CY6264
    Text: CYPRESS PRELIMINARY CY6264 8K x 8 Static RAM Features active HIGH chip enable CE2 , and active LOW output enable (OE) and three-state • 55,70 ns access times drivers. Both devices have an automatic • CMOS for optimum speed/power power-down feature (CEi), reducing the


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    PDF CY6264 CY6264is 450-mil 300-mil 25iHbb2 STATIC RAM 6264 ram 6264 Hyundai Semiconductor 6264 Hyundai 6264 DD172

    Untitled

    Abstract: No abstract text available
    Text: • tiEMTöSl 0017Sb4 MITSUBISHI RF POWER MODULE ■ M57786M 430-470MHZ, 7.2V, 7W, FM PORTABLE RADIO OUTLINE DRAWING BLOCK DIAGRAM Dimensions in mm © —IH- H£> PIN : © P in RF INPU T ©VCCI 1st. DC SUPPLY V bb BASE BIAS SUPPLY ®VC C2 2nd. DC SUPPLY


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    PDF 0017Sb4 M57786M 430-470MHZ,

    H7057

    Abstract: TI241 00003H d70f3008 p103 t020 D70F30 PD703008
    Text: NEC USER'S MANUAL ¿¿PD703008 /iPD70F3008 /IPD703008Y ¿¿PD70F3008Y e NEC Corporation 1997 b427SSS DDTTQll bSfi Document No. U11969EJ1V0UM00 1st edition Date Published January 1997 N Printed in Japan ft Regional Information S om e information contained in this document may vary from country to country. Before using any N E C


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    PDF uPD703008 uPD70F3008 uPD703008Y uPD70F3008Y b427SSS U11969EJ1V0UM00 L427S2S H7057 TI241 00003H d70f3008 p103 t020 D70F30 PD703008

    Untitled

    Abstract: No abstract text available
    Text: i T T DEVELOPMENT DATA • This data sheet contains advance information and specifications are subject to change without notice. ^ 53=131 o o i? 5 fli ^ ■ ’ BST90 Jt N AMER PHILIPS/DISCRETET S5E D -T - 37 - O S' N-CHANNEL VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended fo r


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    PDF BST90 June198B