Untitled
Abstract: No abstract text available
Text: MOE D • MOSSTlb 0D137Ö3 3 ■ A M I . . T - M 2 - 8 \ G ould AMI S ilic o n F ou n d ry A pproach Gould AMI is proud of the leadership position it occupies in today’s fast-paced world of process and technology. Our Silicon Foundry services and capabilities are truly world class. We pro
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0D137Ã
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DD13725
Abstract: CXA1950Q QFP-32P-101
Text: SONY CXA1950Q RGB and Y Color Difference Decoder Description The CXA1950Q is an IC that converts separation signals into RGB signals or Y color difference signals, and can be used with both NTSC and PAL systems. Features • Chroma signal band: 1,5MHz typ.
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CXA1950Q
CXA1950Q
120mV,
D01373Ã
32PIN
QFP-32P-L01
QFP032-P-0707-A
3fl23fl3
DD13725
QFP-32P-101
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Untitled
Abstract: No abstract text available
Text: 43E 3> PLESSEY SEMICONDS B 37baS22 0013714 3 M P L S B GEC PLESSEY ISE MIC ONDUCT OR S I SP8660A & B 1 5 0 M H z + 10 The SP8660A /B is a low power emitter coupled logic counter with an open collector output capable of driving T T L or C M O S . The device is available in two temperature ranges:
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37baS22
SP8660A
SP8660A
SP8660A)
SP8660B)
37bfiSS2
37bflS22
SP8660
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SDL-3030
Abstract: No abstract text available
Text: ENGINEERING SPECIFICATIONS * T O T T O S I SANYO ELECTRONIC 5-JIS. T u l i T > I I t r i ' S 1 I, ELECTRIC CO. LTD. DEVICE DIVISION i n i-C lt 660 J i p í o Date: January 9, 1989 L A S E R D I ODE T y p e : S D L —3 0 3 0 —OO 1 * verified and distributed by Electronic Device Division, T o tto ri Sanyo
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H707b
SDL-3030-00
0D137D0
SDL-3030
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC tiHE D m 7U4142 256Kx4 Bit CMOS VIDEO RAM FEATURES • Dual Port Architecture 256K x 4 bits RAM port 512 x 4 bits SAM port • Performance range: -8 Item • • • • • • • • • • • • -10 80ns 1 0 0 ns access time t R A c
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7U4142
256Kx4
150ns
180ns
28-PIN
KM424C256
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TRANSISTOR A3
Abstract: transistor c 3274 BLW60 transistor c 1974 transistor wz blw60 philips carbon film resistor capacitor polyester philips trimmer 3-30 pf TRIMMER capacitor 5-60 pF trimmer PT 10
Text: -— . L I_ N AMER PHILIPS/DISCRETE ObE D 86D 0 1 4 7 0 D bbS3=î31 00137Ga T • T~ 3 /f BLW60 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial
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bbS3T31
BLW60
TRANSISTOR A3
transistor c 3274
BLW60
transistor c 1974
transistor wz blw60
philips carbon film resistor
capacitor polyester philips
trimmer 3-30 pf
TRIMMER capacitor 5-60 pF
trimmer PT 10
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AN7109S
Abstract: an7109 hi z preamp I400 12G-V 0Q137
Text: A N 7109S AN7109S 2-channel Recording / Playback Pre / Power A m plifier IC for Headphone Stereo • Description The AN7109S is a monolithic integrated circuit designed for recording playback pre / power amplifier so far constituted by 3 ICs. This IC allows low-end and process
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AN7109S
28-Lead
SO-28D)
0G1375G
an7109
hi z preamp
I400
12G-V
0Q137
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tba 180s
Abstract: No abstract text available
Text: 17E D ZIL06 INC • TJÄ4043 0G137Db S m il it a r y Z l l O g Z ' - p r o d u c t S ç e c liic a tio n ^ " ^ £ £ 0 ^ “T - q b ^ s October 1988 Z 8 0 3 8 /Z 8 5 3 8 M ilitary FIO FIFO In p u t/ O u tp u t Interface Unit FcaturM ■ 128-byte FIFO buffer provides asynchronous
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ZIL06
0G137Db
128-byte
Z8038/Z8538F10
Z0803804CM
tba 180s
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D1377
Abstract: TCA 965 BP KM424C256A
Text: b4E D SAMSUNG ELEC TRONICS INC • CMOS VIDEO RAM KM424C256A GENERAL DESCRIPTION 256K X 4 Bit CMOS VIDEO RAM FEATURES • Dual Port Architecture 256K x 4 bits RAM port 512 x 4 bits SAM port • Performance range: Item -6 RAM access time tmc RAM access time (tCAc)
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0G13771
KM424C256A
KM424C256A
256Kx4
28-PIN
D1377
TCA 965 BP
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LZ2324J
Abstract: TO-S139 sharp CCD Image Sensor SSV2
Text: SHARP» LZ2324J LZ2324J 1/3 type B/W CCD Area Sensor for CCIR DESCRIPTION PIN CONNECTIONS LZ2324J is a 1/3-type 6.0 mm solid-state image sensor that consists of PN phote-diodes and CCDs (charge-coupled devices). Having approxi mately 320 000 pixels (horizontal 542 x vertical
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LZ2324J
16-PIN
DD137GB
LZ2324J
DD137DH
TO-S139
sharp CCD Image Sensor
SSV2
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Untitled
Abstract: No abstract text available
Text: o m ^ L m Final Electrical S pecifications LTC1438/LTC1439 Dual High E fficiency, Low Noise, Synchronous Step-D ow n Sw itching Regulators u im TECHNOLOGY _ DiSCRIPTIOft F€flTUR€S March 1996 • Maintains Constant Frequency at Low Output Currents The LTC 1438/LTC1439 are dual, synchronous stepdown switching regulatorcontrollers which drive external
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LTC1438/LTC1439
1438/LTC1439
400kHz
LTC1538-AUX
LTC1539
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Untitled
Abstract: No abstract text available
Text: MÖ 5S 77 1 D G 1 3 7 3 b 171 bSE D CMOS PARALLEL-TO-SERIAL FIFO SPNp 20 4 8 x Q « 4096 x 9 y I IDT IDT72131 IDT72141 INTEGRATED DEVICE Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • The IDT72131/72141 are high-speed, low power parallelto-serial FIFOs. These FIFOs are ideally suited to serial
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IDT72131
IDT72141
IDT72131/72141
IDT72132/72142)
GG1374B
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DM50P
Abstract: No abstract text available
Text: PRELIMINARY I^ IC R D N 1 MEG DRAM M ODULE MT4LD T 164(X) 64 DRAM MODULE X 1 M EG x 64 8 MEGABYTE, 3.3' 8 MEGABYTE’ a3V’ FASTPAGE0R EDO PAGE MODE FEATURES • JEDEC- and industry-standard pinout in a 168-pin, dual-in-line memory module (DIMM) • High-performance CMOS silicon-gate process
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168-pin,
024-cycle
DM50P
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FLH215
Abstract: No abstract text available
Text: SHARP LZ2364J LZ2364J 1/3 type B/W CCD Area Sensor for CCIR DESCRIPTION PIN CONNECTIONS LZ2364J is a 1/3-type 6.0 mm solid-state image sensor that consists of PN phote-diodes and CCDs(charge-coupled devices). Having approxi mately 470 000 pixels (horizontal 795 x vertical
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LZ2364J
0bs0b10
D0137fiS
LZ2364J
FLH215
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R6500 microcomputer system programming manual
Abstract: Rockwell 6502 R6511Q microprocessor Rockwell R6500 R6502
Text: ROCKWELL INTL/ SC PDTS 11 D E | 7Ö11D73 OD1371Ö 1 | R6500/11 */12*/15 R6500/11, R6500/12 and R6500/15 One-Chip Microcomputers SECTION 1 INTRODUCTION 1.1 FEATURES i Enhanced 6502 CPU — Four new bit manipulation instructions: Set Memory Bit SMB Reset Memory Bit (RMB)
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11D73
OD1371Ö
R6500/11
R6500/11,
R6500/12
R6500/15
R6500/12)
R6500/15)
192-byte
R6500 microcomputer system programming manual
Rockwell 6502
R6511Q
microprocessor Rockwell R6500
R6502
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5d3 diode
Abstract: sanyo laser
Text: ENGINEERING SPECIFICATIONS *' TOTTORI SANYO ELECTRONIC 5 - S I * . E LE CTRI C CO. LTD DEVICE DIVISION I i d l k i * T ii t t » i i" S k i. 880 i - C i i lip ib Date^ January 9, 1989 LASER DIODE TTyjpe : SDL-6032-10 1 * verified and distributed by Electronic Device D ivision, T o tto ri Sanyo
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SDL-6032-10
001375S
0D13727
5d3 diode
sanyo laser
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ce 2752
Abstract: No abstract text available
Text: böE D • 4Û 25 77 1 D D 1 3 7 M T AST « I D T CMOS SERIAL-TO-PARALLEL FIFO IDT72132 2048 x 9 IN T E G R A T E D E VI CE IDT72142 4096 x 9 FEATURES: DESCRIPTION: • • • T h e ID T 7 213 2 /7 2 1 4 2 are high-speed, low-power serial-toparallel FIFO s. These FIFO s are ideally suited to serial
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IDT72132
IDT72142
IDT72142S
ce 2752
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dac1231
Abstract: No abstract text available
Text: Semiconductor M IC R O - D A C D A C 12 0 8 / D A C 1 2 0 9 / D A C 1 2 1 0 / D A C 1 2 3 0 / D A C 1 2 3 1 / D A C 1 2 3 2 1 2 - B it , jliP C o m p a t i b l e , D o u b le -B u ffe r e d D to A C o n v e r te r s General Description Features The DAC1208 and the DAC1230 series are 12-bit multiply
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DAC1208
DAC1230
12-bit
DAC1230LCJ
DAC1230LCJ-1
DAC1231LCJ
DAC1231LCJ-1
DAC1231LCN
DAC1231LCWM
DAC1231
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MT4LC4M4G6
Abstract: No abstract text available
Text: ADVANCE M IC n a iS I I MT4LD T 164A B, MT8LD264A B, MT16LD464A B 1,2, 4 MEG X 64 BURST EDO DRAM MODULES 1, 2, 4 MEG X 64 BURST EDO DRAM MODULE 8, 16, 32 MEGABYTE, 3.3V, NONBUFFERED, BURST EDO FEATURES PIN ASSIGNMENT (Front View) 168-Pin DIMM • 168-pin, dual-in-line memory module (DIMM)
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MT8LD264A
MT16LD464A
168-Pin
168-pin,
024-cycle
048-cycle
MT8LD264AB.
MT4LC4M4G6
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Untitled
Abstract: No abstract text available
Text: ENGINEERING SPECIFICATIONS * T O T T O R I S A il Y O - . E L E C T R I C E L E C T R O N I C S - J I » . D E V I C E T i t i T t l l M l - S I ik >» I. * * • i - C CO. . LTD. D I V I S I O N I • # f » o Date’- May 10, 1989 LA SER Ty;P e : D IO D E
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T07TCR!
0D137
SDL-3144-101
70urn
00137ai
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Untitled
Abstract: No abstract text available
Text: T -1 3 /4 L E D S u p e r L a m U LED LAMPS AND INDICATORS W h n t HEW LETT m LEM P A C K A R D ltr a - B r ig h t p s HLMP 8115 HLMP 8205 HLMP- 8305 HLMP 8405 HLMP 8505 HLMP 8605 Technical Data Features Description • Very High Intensity • Narrow and Medium Viewing
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HLMP-8109
HLMP-8209
HLMP-8309
HLMP-8409
HLMP-8509
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Untitled
Abstract: No abstract text available
Text: MTA85XXX M ic r o c h ip PICSEE 20-Pin MCU with Serial EEPROM Multi-Chip Module PACKAGE TYPE FEATURES SSOP Multi-chip module PIC16C54A or PIC16C58A M icrocontrollers with 24LC01B or 24LC02B Serial EEPROMs SEEs in a single package X T " SD A O SC 2 - 17 □
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MTA85XXX
20-Pin
PIC16C54A
PIC16C58A
24LC01B
24LC02B
MTA85X1X
DS40115C-page
0D137bQ
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CXA1960Q
Abstract: 836 gfp
Text: SONY I_ C X A 1980Q QQ Dolby B Type Noise Reduction System with Playback Equalizer Description The CXA1980G is an IC designed for use in car stereos. Functions include Dolby B type noise reduction NR , playback equalizer and interval detection between tracks (Music Sensor) into a
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1980Q
CXA1980G
32-pin
CXA1980Q
32PIN
GFP-32P-LQ1
032-P-0707-A
fl3A23fl3
001375b
CXA1960Q
836 gfp
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C137E
Abstract: IA10 M29W040 M39432 si2730
Text: rZ J S G S -T H O M S O N M39432 SINGLE CHIP 4 Megabit FLASH an 256K PARALLEL EEPROM MEMORY PRELIMINARY DATA > 3.3V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPARATIONS • 120ns ACCESS TIME FLASH and EEPROM blocks ■ WRITE, PROGRAM and ERASE STATUS BITS
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M39432
120ns
M39432
TSOP40
DCH3732
C137E
IA10
M29W040
si2730
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