MOSFET 400V TO-220
Abstract: IRF820 IRL820S IRL820T
Text: Bay Linear Linear Excellence IRF820 POWER MOSFET Advance Information Description Features • • • • • The Bay Linear MOSFET’s provide the designers with the best combination of fast switching, ruggedized device design, low 0n-resistance and low cost-effectiveness.
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IRF820
O-220
MOSFET 400V TO-220
IRF820
IRL820S
IRL820T
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MGSF3454V
Abstract: MGSF3454VT1 MGSF3454VT3
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3454V Motorola Preffered Device Preliminary Information Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET PR EL IM IN AR Y rDS(0N) =50mΩ (TYP)
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MGSF3454V
MGSF3454V
MGSF3454VT1
MGSF3454VT3
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110N20
Abstract: pf 480 d25
Text: PRELIMINARY DATA SHEET v DSS HiPerFET Power MOSFET IXFN IXFN IX F K IX F K Single MOSFET Die 12 0N 2 0 11 0N 20 120 N 20 11 0N 2 0 200V 200V 200V 200V p DS on ^D25 120A 110A 120A 110A 17m£2 20m£2 17m£2 20m£2 200ns 200ns 200ns 200ns TO-264 AA (IXFK)
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200ns
200ns
O-264
110N20
120N20
Cto150
110N20
pf 480 d25
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9435a
Abstract: 9435A transistor B 9435A p 9435a E 9435A
Text: FAIRCHILD December 1995 SEM IC ONDUCTO R tm NDS9435A Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect • -5.3A, -30V. RDS 0N = 0.05Q @ VGS = -10V RDS(0N) = 0.07Q @ VGS = -6V
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NDS9435A
9435a
9435A transistor
B 9435A
p 9435a
E 9435A
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Untitled
Abstract: No abstract text available
Text: FAIRCHILD SEM IC ONDUCTO R February 1996 tm NDS9410A Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect • 7.3A, 30V. RDS 0N = 0.028£2 @ VGS = 10V. RDS(0N) = 0.042£2 @ VGS = 4.5V.
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NDS9410A
NDS9410A
NDS941
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Untitled
Abstract: No abstract text available
Text: F A I R C H September 1997 I L D SEM IC ONDUCTO R tm NDP6020P / NDB6020P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features -24 A, -20 V. Rds on = 0.05 £2 @ VGS= -4.5 V. RDS(0N) = 0.07£2 @ VGS= -2.7 V. Rds(0N) = 0.075 £2 @ VGS= -2.5 V.
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NDP6020P
NDB6020P
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S-8435
Abstract: No abstract text available
Text: F A I R C H I L D M aV 1996 SEM IC ONDUCTO R tm NDS8435 Single P-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 P-Channel enhancement mode power field effect • -7A, -30V. RDS 0N = 0.028Q @ VGS = -10V RDS(0N) = 0.045Q @ VGS = -4.5V.
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NDS8435
S8435
S-8435
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HA 1314
Abstract: DG201ACJ
Text: DG201A, DG202 S «ftSRW? Quad SPST, CMOS Analog Switches August 1997 Features Description • Input Signal R a n g e . . ±15V • Low rDS 0N . £1750 • TTL, CMOS Com patible
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DG201A,
DG202
DG201A
DG201A
DG202
DG201
DG202,
HA 1314
DG201ACJ
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K6550
Abstract: OP145A OP145B OP145C OP145D OP555 OP565
Text: OPTEK Product Bulletin OP145A June 1996 GaAs Plastic Infrared Emitting Diodes Types OP145A, OP145B, OP145C, OP145D .025 0.64 .015 (0.38) .055 (1.40) .045 (1.14) □- •IBP (4.57) .170 (4.32) TT .092 (2.34) .082 (2.08) .245 (6.22) .225 (5.72) ,0n ^ 54) □.025 (0.64)
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OP145A
OP145A,
OP145B,
OP145C,
OP145D
OP555
OP565
OP145
935nm
K6550
OP145B
OP145C
OP145D
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Untitled
Abstract: No abstract text available
Text: 09 FSF250D, FSF250R 24A, 200V, 0.110 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 24A, 200V, rDS 0N = 0.110£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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FSF250D,
FSF250R
MIL-STD-750,
MIL-S-19500,
100ms,
500ms,
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ss100 transistor
Abstract: 2SK2605 transistor ss100 2sK2605 TRANSISTOR
Text: TOSHIBA 2SK2605 TOSHIBA FIELD EFFECT TRANSISTOR 2SK2605 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS • • • • Low Drain-Sorce ON Resistance : Rd s 0N “ 1*90 (Typ.) High Forward Transfer Admittance : |Yfs| = 3.8S (Typ.)
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2SK2605
SS-100/
ss100 transistor
2SK2605
transistor ss100
2sK2605 TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE nr-MOSn 2SK1120 HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. SWITCHING POWER SUPPLY APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm 15.9MAX. A FEATURES: •Low Drain-Source ON Resistance : RDS(0N)=1.5ß (Typ.)
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2SK1120
20kfl
10raA,
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D3A transistor
Abstract: 2SK1118 D3A DIODE Field Effect Transistor Silicon N Channel MOS vdss 600 5400V
Text: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE w-MOSn 2SK1118 HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR,DC-DC CONVERTER ANO HOTOR DRIVE APPLICATIONS. INDUSTRIAL APPLICATIONS FEATURES: • Low Drain-Source ON Resistance : RDS(0N)= 0.95Q (Typ.)
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300juA
10tfs
00A/ws
D3A transistor
2SK1118
D3A DIODE
Field Effect Transistor Silicon N Channel MOS vdss 600
5400V
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2SK1213
Abstract: transistor 2sk1213 D 1062 transistor adit Field Effect Transistor Silicon N Channel MOS vdss 600
Text: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSH 2SK1213 HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR,DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. INDUSTRIAL APPLICATIONS FEATURES: • Low Drain-Source ON Resistance : RDS(0N)= 0.95Q (Typ.)
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DD300V
00A/j
2SK1213
transistor 2sk1213
D 1062 transistor
adit
Field Effect Transistor Silicon N Channel MOS vdss 600
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r4373
Abstract: No abstract text available
Text: JANSR2N7400 33 Formerly FSS230R4 8A, 200V, 0.440 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 8A, 200V, rDS 0N = 0.4400 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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FSS230R4
JANSR2N7400
MIL-STD-750,
MIL-S-19500,
500ms;
r4373
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Untitled
Abstract: No abstract text available
Text: LtfMOS Precision Quad SPST Switches ADG411/ADG412/ADG413 ANALOG DEVICES FUNCTIONAL BLOCK DIAGRAMS FEATURES 44 V Supply Maximum Ratings ±15 V Analog Signal Range Low On Resistance <35 il Ultralow Power Dissipation (35 (jiW) Fast Switching Times t 0N <175 ns
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DG411/DG412/DG413
ADG411/ADG412/ADG413
16-Lead
RU-16)
1748a-3-2/98
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Untitled
Abstract: No abstract text available
Text: EO AIGaAs INFRARED EMITTING DIODE OPTOELECTRONICS QED422/423 PACKAGE DIMENSIONS DESCRIPTION Th e Q E D 42X is an 88 0n m AIG aA s LED encapsulated in a • .1 9 0 4 8 3 . clear, purple tinted, plastic T O -4 6 package. FEATURES Tight production Ee distribution.
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QED422/423
QED42X
ST2135
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Untitled
Abstract: No abstract text available
Text: FAIRCHILD S E M IC O N D U C T O R August 1999 tm FDFS2P102 FETKEY P-Channel MOSFET with Schottky Diode General Description Features -3.3 A, -20 V. RDS 0N = 0.125 £2 @ VGS = -10 V Rdsion) = 0.200 £2 @ VGS = -4.5 V. Fairchild Semiconductor's FETKEY technology combines a
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FDFS2P102
FDFS2P102
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2SK890
Abstract: No abstract text available
Text: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE Ä-MOSH HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. 2SK890 INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. • Low Drain-Source ON Resiatance : Rj)g(0N )=O.25£i(Typ.)
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2SK890
100nA
300uA
20ki2)
2SK890
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k2995
Abstract: 48mo
Text: TO SHIBA 2SK2995 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2S K2995 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS : R d s ( 0N) —48mO (Typ.)
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2SK2995
K2995
k2995
48mo
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Untitled
Abstract: No abstract text available
Text: FSJ264D, FSJ264R 39 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Features • Description 33A, 250V, rDS 0N = 0.080Q • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects
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FSJ264D,
FSJ264R
1-800-4-HARRIS
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Untitled
Abstract: No abstract text available
Text: SFM9110 Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 nA Max. @ VOS= -100V Lower RDS(0N) : 0.912 ft (Typ.)
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SFM9110
-100V
OT-223
cb414S
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Untitled
Abstract: No abstract text available
Text: Advanced SSH4N90AS Power MOSFET FEATURES BVDSS Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ^DS on = ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 900V H Low Rds(0n) ■ 3.054 £1 (Typ.)
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SSH4N90AS
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Untitled
Abstract: No abstract text available
Text: SSH9N90A Power MOSFET FEATURES BVDSS Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ^ D S o n = ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ VDS = 900V H Low Rds(0n) ■ 0.938 £1 (Typ.)
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SSH9N90A
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