Untitled
Abstract: No abstract text available
Text: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 -JU L Y 94_ FEATURES * 60 Volt V,DS ^DS on - 0 ,3 3 fl Spice model available APPLICATIONS * DC-DC convertors * Solenoids / relay drivers for automotive ABSOLUTE MAXIMUM RATINGS. PARAMETER
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Tamtp25Â
0Q1Q354
001G35S
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 2 -J U L Y 94_ FEATURES * 100 Volt V CE0 * 2 A m p continuous current * Low saturation voltage * P,ot=1W a tt ABSOLUTE M A X IM U M RATINGS. Collector-Emitter Voltage Emitter-Base Voltage
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ZTX753
ZTX752
cH7Q57Ã
0Q1Q354
001G35S
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Untitled
Abstract: No abstract text available
Text: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ISSUE 1 - APRIL 94 FEATURES * 300 Volt V,CEO 3 Amps continuous current Up to 5 Amps peak current Very low saturation voltage P,ot= 1.2 Watt ABSOLUTE MAXIMUM RATINGS. SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage
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0Q1Q354
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX957 ISSUE 3 -J U N E 94_ • FEATURES * 1 Am p continuous current * * Up to 2 Am ps peak current Very lo w saturation voltage * * Excellent gain characteritics up to 1 Am p
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ZTX957
0Q1Q354
001G35S
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Untitled
Abstract: No abstract text available
Text: NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTORS ZTX656 ZTX657 ISSUE 2 - JULY 94 FEATURES * 300 Volt VCE0 * 0.5 Amp continuous current * P torlW att P s f E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage Collector-Emitter Voltage
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ZTX656
ZTX657
0Q1Q354
001G35S
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Untitled
Abstract: No abstract text available
Text: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 -MARCH 94_ FEATURES * 60 Volt V,DS * R ,DS on ' 5£i REFER TO ZVP2106A FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VDS VALUE Continuous Drain Current at Tam(3=25°C
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ZVP2106A
cH7Q57Ã
0Q1Q354
001G35S
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 2 -NO VEM BER 94_ ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage Collector-Em itter Voltage VALUE UNIT v CBO -25 V VCEO -25 V Emitter-Base Voltage VEBO -4 V Continuous Collector Current
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0Q1Q354
001G35S
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER TRANSISTOR IS S U E 1 - A P R IL 94 _ FEATURES * * 25 Volt V CE0 2 A m p continuous current * Low saturation voltage ABSOLUTE M A XIM U M RATINGS. PARAMETER SY M B O L Collector-Base Voltage VALUE UNIT V CBO
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0Q1Q354
001G35S
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ztx849
Abstract: No abstract text available
Text: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX849 ISSUE 2 -M A R C H 94_ _ _ FEATURES * 5 Am ps continuous current * Up to 20 Am ps peak current * Very lo w saturation voltages APPLICATIONS * * LCD backlight converter
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ZTX849
0Q1Q354
001G35S
ztx849
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Untitled
Abstract: No abstract text available
Text: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 -M A R C H 94_ FEATURES * 100 V olt VDS * RDS on>= 1 -5 0 * Spice m odel available ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VALUE UNIT V VDS 100 Continuous Drain Current a tT amtj=25°C
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0Q1Q354
001G35S
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Untitled
Abstract: No abstract text available
Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 2 - M A Y 94_ FEATURES * 12 Volt V CE0 * Gain of 400 at lc=3 A m p s * Very low saturation voltage A P P L IC A T IO N S * Darlington replacement * Flash gu n convertors
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cH7Q57Ã
0Q1Q354
001G35S
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Untitled
Abstract: No abstract text available
Text: NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTOR ISSUE 2 - MARCH 94_ FEATURES • 40 V olt VCE0 * Very fast sw itching E-Line T092 Compatible ABSOLUTE M AXIM UM RATINGS. SYMBOL PARAMETER VALUE UNIT V V CBO 40 Collector-Emitter Voltage
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0Q1Q354
001G35S
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Untitled
Abstract: No abstract text available
Text: ZC2800 ZC2811 ZC5800 SCHOTTKY BARRIER DIODES IS S U E 2 - M A R C H 94 DIODE PIN CONNECTION t — M- CATHODE 2 ANODE ABSOLUTE MAXIMUM RATINGS. PARAM ETER SYM BO L Power Dissipation at T amb= 25°C Ptot Operating and Storage Temperature Range ZC2800,ZC2811,ZC5800
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ZC2800
ZC2811
ZC5800
ZC2800
ZC2811
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Untitled
Abstract: No abstract text available
Text: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 -MARCH 94_ FEATURES * 20 0 V olt V DS * R DS on = 32i2 ABSOLUTE MAXIMUM RATINGS. PARAM ETER SYM BO L Drain-Source Voltage V DS -200 V Continuous Drain Current at Tamb=25°C b -110
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0Q1Q354
001G35S
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Untitled
Abstract: No abstract text available
Text: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 -MARCH 94_ FEATURES * 350 V olt VDS R DS on = 3 5 i i ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VDS 350 V Continuous Drain Current at Tamb=25°C •d 90 mA Pulsed Drain Current
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cH7Q57Ã
0Q1Q354
001G35S
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Untitled
Abstract: No abstract text available
Text: NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 1 - SEPT 93 FEATURES * 45 Volt V,CEO 1 Amp continuous current P,ot=1 Watt REFER TO ZTX450 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VALUE UNIT v CBO 60 V Collector-Em itter Voltage
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ZTX450
0Q1Q354
001G35S
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Untitled
Abstract: No abstract text available
Text: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 1 - MARCH 94_ FEATURES * 240 Volt VDS * ^DS on = 1 6 fl APPLICATIONS * Telephone handsets ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VALUE UNIT V V DS 240 Continuous Drain Current at Tamp25°C
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Tamp25Â
cH7Q57Ã
0Q1Q354
001G35S
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Untitled
Abstract: No abstract text available
Text: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 -M ARCH 94 FEATURES * 100 Volt VDS * A \ Ros.on,=20n m JffS Gs E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage V DS -100 V Continuous Drain Current at Tamtj=25°C b
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amtp25Â
cH7Q57Ã
0Q1Q354
001G35S
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR IS S U E 1 - A P R IL 94 FEATURES * 200 Volt VCE0 * Gain of 250 at lc=0.3 Amps * Very low saturation voltage ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VALUE UNIT V V VCBO -200 Collector-Em itter Voltage
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0Q1Q354
001G35S
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX792A ISSUE 2 -A P R IL 94_ — — — — — — FEATURES * 70 Volt VCE0 * * Gain of 400 at lc=3 Amps Very low saturation voltage APPLICATIONS * * Darlington replacement
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ZTX792A
cH7Q57Ã
0Q1Q354
001G35S
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TAM25
Abstract: No abstract text available
Text: N-CHANNELIGBT WITH INTEGRAL DIODE Z C N 9150A DRAFT DATASHEET ISSUE A - DECEMBER 94 FEATURES * 500 Volt VDS * Integral Diode * Fast Switching APPLICATIONS * Compact Fluorescent Ballast ABSOLUTE MAXIMUM RATINGS at Tam^25°C unless otherwise slated PARAMETER
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N9150A
amif125Â
cH7Q57Ã
0Q1Q354
001G35S
TAM25
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le2m
Abstract: No abstract text available
Text: NPN SILICON PLANAR RF TRANSISTOR IS S U E 2 - M A R C H 94 FEATURES * * High fT, 1.3GHz Low noise < 5dB at 500MHz * Power output at 500MHz >175mW ABSOLUTE M A XIM U M RATINGS. PARAM ETER SYM BO L Collector-Base Voltage V CBO Collector-Emitter Voltage VALU E
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500MHz
175mW
0Q1Q354
001G35S
le2m
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR FXT757 ISSUE 1 - FEB 94_ FEATURES * 300 Volt V,CEO 0.5 Amp continuous current P,o,= 1 Watt E-Line T092 Compatible REFER TO ZTX757 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS.
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FXT757
ZTX757
0Q1Q354
001G35S
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dg1u
Abstract: ZBD949 70S70 LT1123 T0126
Text: PNP LOW DROPOUT REGULATOR TRANSISTOR ISSUE 3 - NOVEMBER 1994_ FEATURES * * Guaranteed hFE specified up to 5 Amps Low collector-emitter saturation voltage - 0.11V Maximum at 1A - 0.45V Maximum at 5A The high gain and very low saturation voltage produce a more effective solution than
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ZBD949
T0126
CICI7DS76
GG1D354
117DS7Ã
001G35S
dg1u
ZBD949
70S70
LT1123
T0126
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