Untitled
Abstract: No abstract text available
Text: AVE mbH Digitally Controlled Line Array Ascolto A.V.E. mbH Audio Vertriebs-Entwicklungsgesellschaft Germany Digitally Controlled Line Array A s c o l t o ® - LH3225 Datasheet Digitally Controlled Line Array Ascolto® LH3225 Datasheet A.V.E. mbH - Germany
|
Original
|
LH3225
LH3225
|
PDF
|
transistor D 2395
Abstract: BLV45/12
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV45/12 VHF power transistor Product specification August 1986 Philips Semiconductors Product specification VHF power transistor BLV45/12 DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily intended for use in
|
Original
|
BLV45/12
OT-119)
transistor D 2395
BLV45/12
|
PDF
|
BLF245
Abstract: SOT123 SOT123 Package MGP175
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLF245 VHF power MOS transistor Product specification September 1992 Philips Semiconductors Product specification VHF power MOS transistor FEATURES BLF245 PIN CONFIGURATION • High power gain • Low noise figure • Easy power control
|
Original
|
BLF245
MBB072
OT123
BLF245
SOT123
SOT123 Package
MGP175
|
PDF
|
Philips 4312 020
Abstract: blv75
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV75/12 VHF power transistor Product specification August 1986 Philips Semiconductors Product specification VHF power transistor BLV75/12 DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily intended for use in
|
Original
|
BLV75/12
OT-119)
Philips 4312 020
blv75
|
PDF
|
SOT123 Package
Abstract: enamelled copper wire tables HF SSB APPLICATIONS BLF145 J119 transistor J-146 MGP040 j146 enamelled copper wire mm table
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLF145 HF power MOS transistor Product specification File under Discrete Semiconductors, SC08a September 1992 Philips Semiconductors Product specification HF power MOS transistor FEATURES BLF145 PIN CONFIGURATION • High power gain
|
Original
|
BLF145
SC08a
OT123
SOT123 Package
enamelled copper wire tables
HF SSB APPLICATIONS
BLF145
J119 transistor
J-146
MGP040
j146
enamelled copper wire mm table
|
PDF
|
enamelled copper wire tables
Abstract: BLF145 J146 J-146
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLF145 HF power MOS transistor Product specification September 1992 Philips Semiconductors Product specification HF power MOS transistor FEATURES BLF145 PIN CONFIGURATION • High power gain • Low noise figure k, halfpage
|
Original
|
BLF145
OT123
MBB072
enamelled copper wire tables
BLF145
J146
J-146
|
PDF
|
BLF244
Abstract: MGP160
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLF244 VHF power MOS transistor Product specification September 1992 Philips Semiconductors Product specification VHF power MOS transistor FEATURES BLF244 PIN CONFIGURATION • High power gain • Low noise figure • Easy power control
|
Original
|
BLF244
MBB072
OT123
BLF244
MGP160
|
PDF
|
thermometer
Abstract: DIN EN 60751 14571
Text: PräzisionsWiderstands thermometer electrotherm Pt 100 Ausgabe 04/99 Einsatzgebiete - Temperaturmessung mit Meßgenauigkeit bis zu 0.02 K - als Arbeitsnormal für den Temperaturbereich -80.200°C empfohlen Technische Daten: - Einsatz sorgfältig vorgealterter und selektierter
|
OCR Scan
|
XII/98
797553u
thermometer
DIN EN 60751
14571
|
PDF
|
Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE ObE D bbS3T31^ DQ113T1 E • | BYV43_SERIES T-03-19 ' SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES High-efficiency schottky-barrier double rectifier diodes in plastic envelopes, featuring low forward voltage drop, low capacitance and absence of stored charge. They are intended fo r use in switchedmode power supplies and high-frequency circuits in general, where both low conduction losses and zero
|
OCR Scan
|
bbS3T31^
DQ113T1
BYV43_
T-03-19
BYV43-40A,
DD114D5
BYV43SERIES
M1246
BYV43
|
PDF
|
BYV39-35
Abstract: BYV39-40A m1727 BYV39 M0026 M1729 BYV39-30 t03n
Text: N AMER PHILIPS/DISCRETE TOD D bbSBTBl DGlüb2D 3 BYV39 SERIES SCHOTTKY-BARRIER RECTIFIER DIODES Hlgh-efficiency schottky-barrier rectifier diodes in T0-220 plastic envelopes, featuring low forward voltage drop, low capacitance, absence of stored charge, and high temperature stability. They are
|
OCR Scan
|
bb53131
BYV39
T0-220
BYV39-40A;
BYV39â
M1246
M81-1555/9
M1729
BYV39-35
BYV39-40A
m1727
M0026
M1729
BYV39-30
t03n
|
PDF
|
BYV39
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE TOD D bb53T31 OOlObSO 3 BYV39 SERIES SCHOTTKY-BARRIER RECTIFIER DIODES High-efficiency schottky-barrier rectifier diodes in TO-220 plastic envelopes, featuring low forward voltage drop, low capacitance, absence of stored charge, and high temperature stability. They are
|
OCR Scan
|
bb53T31
BYV39
O-220
BYV39-40A;
|
PDF
|
Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE DL.E D • ^ 5 3 ^ 3 1 0011351 7 ■ BYV33 SERIES _ J y T-03-19 SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES High-efficiency schottky-barrier double rectifier diodes in plastic envelopes, featuring low forward
|
OCR Scan
|
BYV33
T-03-19
bbS3T31
bb53T31
D0113ST
|
PDF
|
T63N
Abstract: philips dl 711
Text: 11 N AMER P H IL IP S /D IS C R E T E Q tE D PHS1401 SERIES fc>b53T31 Q D l l b T S E • t - 03-n ULTRA FAST-RECOVERY RECTIFIER DIODES The PHS1401 series of devices are glass-passivated, high efficiency, alloy bonded rectifier diodes featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge, and soft
|
OCR Scan
|
PHS1401
b53T31
PHS1401,
PHS1402,
PHS1403,
PHS1404.
PHS1401
T63N
philips dl 711
|
PDF
|
BYV22
Abstract: No abstract text available
Text: N ANER P H T L I P S /D IS C R E T E TOD D bb53T31 0010564 r 3 BYV22 SERIES SCHOTTKY-BARRIER RECTIFIER DIODES High-efficiency schottky-barrier rectifier diodes in DO-5 metal envelopes, featuring low forward voltage drop, low capacitance, absence of stored charge and high temperature stability. They are
|
OCR Scan
|
bb53T31
BYV22
BYV22â
btiS3T31
00105T1
|
PDF
|
|
|
ajs 75-7
Abstract: M3168 M3170 56295B
Text: BYV120 SERIES T-OJ-17 _ PHILIPS INTERNATIONAL SbE J> I 711002b 0041400 ST7 « P H I N SCHOTTKY-BARRIER RECTIFIER DIODES Low-leakage, platinum-barrier rectifier diodes in metal envelopes, featuring low forward voltage drop, low capacitance, absence of stored charge and high temperature stability. They are intended for use in
|
OCR Scan
|
BYV120
T-OJ-17
711002b
BYV120-
QQ414C
M3170
T-03-17
ajs 75-7
M3168
M3170
56295B
|
PDF
|
M2873
Abstract: M2876 m2878 M2872 BYV42 Ultra Fast Recovery Double Rectifier Diodes m073 M2877
Text: N AMER P H I L I P S / D I S C R E T E 2SE D • ^53*131 Â Q022SÖ3 b ■ BY V4 2 b h H I E S T -O Z -rt ULTRA FAST RECOVERY DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency double rectifier diodes in plastic envelopes, featuring low forward voltage drop, ultra fast reverse recovery times and soft-recovery characteristic. They are intended fo r
|
OCR Scan
|
Q022SÃ
BYV42
M0746
M2873
M2876
m2878
M2872
Ultra Fast Recovery Double Rectifier Diodes
m073
M2877
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BYV118 SERIES s SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES Low-leakage, platinum -barrier double rectifier diodes in plastic envelopes featuring low forward voltage drop, low capacitance and absence o f stored charge. They are intended fo r use in switchedmode power supplies and high-frequency circuits in general, where both low conduction losses and
|
OCR Scan
|
BYV118
|
PDF
|
M03A
Abstract: No abstract text available
Text: -I—1_ QbE D ^MIER^PHXLIPS/discrete LbS m B l O Q in a i 7 C122 SERIES r - 2 S T - l S' THYRISTORS The C l22 series devices are glass-passivated thyristors featuring alloy-bonding, thus being particularly suitable in situations creating high fatigue stresses involved in thermal cycling and repeated switching.
|
OCR Scan
|
C122F
M03A
|
PDF
|
m1204 diode
Abstract: M1204 M3154 BYV143-35 BYV143 M3161 m2784 M3152 M31 diode
Text: ' 11 131=53^31 HSE D N AMER P H I L I P S / D I S C R E T E □ 05271=] 5 • BYV143 SERIES 7 ^ 0 3 -1 ^ SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES Low-ieakage, platinum-barrier double rectifier diodes in plastic envelopes featuring low forward voltage drop, low capacitance and absence of stored charge. They are intended fo r use in switchedmode power supplies and high-frequency circuits in general, where both low conduction losses and
|
OCR Scan
|
BYV143
fab53T31
T-03-19
m1209
m3154
m1204 diode
M1204
M3154
BYV143-35
M3161
m2784
M3152
M31 diode
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 25E D N AUER PHI LIP S/DISCRETE • 1^53=131 0023573 3 ■ BYV34 SERIES T 1 0 3 - /9 ULTRA FAST RECOVERY DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency double rectifier diodes in plastic envelopes, featuring low forward voltage drop, ultra fast reverse recovery times and soft-recovery characteristic.- They are intended for
|
OCR Scan
|
BYV34
Q025Sfll
bbS3131
0Q525fl2
T-03-19
|
PDF
|
TO-319
Abstract: Ultra Fast Recovery Double Rectifier Diodes metallic rectifier diode BYV32 IEC134 t0319
Text: - N AMER P H IL IP S /D IS C R E T E 2SE D • - ' - | bbS3T31 005SSS3 dï V<5'd Ô ■ SLRIES T - o S - jC } ULTRA FAST RECOVERY DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency double rectifier diodes in plastic envelopes, featuring low forward
|
OCR Scan
|
005SSS3
BYV32
bbS3131
G0225b2
T-03-Ã
TO-319
Ultra Fast Recovery Double Rectifier Diodes
metallic rectifier diode
IEC134
t0319
|
PDF
|
BYQ28
Abstract: No abstract text available
Text: N A ME R PHILIPS/DISCRETE 2 SE D • 1^53=131 0 0 2 2 3 T 5 _ _ S ■ BYQ28 SERIES A 7 - 0 3 -1 7 ULTRA FAST RECOVERY DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency double rectifier diodes in plastic envelopes, featuring low forward
|
OCR Scan
|
BYQ28
operati1-03-17
bbS3T31
0DEEM03
D0EE404
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PBYR1635 PBYR1640 PBYR1645 - N AMER PHILIPS/DISCRETE 25E D E3 fe,b5313]i OOSSTS? T B 7^0 3 - ; 7 SCHOTTKY-BARRIER RECTIFIER DIODES Low-leakage platinum-barrier rectifier diodes in plastic envelopes, featuring low forward voltage drop, low capacitance, and absence of stored charge. They are intended fo r use in
|
OCR Scan
|
PBYR1635
PBYR1640
PBYR1645
b5313
PRYR1fi45
bbS3T31
T-03-17
M3192
|
PDF
|
Untitled
Abstract: No abstract text available
Text: asaL. PBYR3035PT PBYR3040PT PBYR3045PT — N AK ER PHILIPS/DISCRETE 2 SE D E3 ,^53*131 0 0 2 2 1 6 7 fl B T -0 3 -fi SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES Low-leakage platinum-barrier double rectifier diodes in plastic envelopes, featuring low forward voltage
|
OCR Scan
|
PBYR3035PT
PBYR3040PT
PBYR3045PT
|
PDF
|
