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    TC40U250

    Abstract: GENTRON ES BT082 GENTRON BT081 2SC1442 entron
    Text: POWER SILICON NPN Item Number Part Number I C 5 10 20 SDT79823 SDT79823 SCA14026 SCA14027 2N6060 2N6062 2N6274 2N6278 ~~~~5~ 25 30 SCA14024 SCA14025 2N6032 2N6275 2N6279 BUT90 BUT90 BUT90 ~~~~g 35 40 BUV60 BUW50 (A) BUV20 BUX20 2N6276 2N6280 SML55405 PT7508


    Original     		PDF SML96303 TC40U250 BUR20 2N5685 PT5501 SCA14028 SCA14029 2N5686 GENTRON ES BT082 GENTRON BT081 2SC1442 entron

    BOW93C

    Abstract: box33c BOV65B B0701 b0651 BOT63B BOX83C BOX63B BOW83C bow530
    Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO (V) Ie Max (A) Po Max (W) hFE Min fT Max (HZl leBO Max (A) t, tf Max (8) Max (8) Toper Max ee) Package Style NPN Darlington Transistors, (Co nt' d) 5 10 2501196 B0267B B0267B 2501230 BD649


    Original     		PDF B0267B BD649 5G5132 B0701 TIP132 MJE6045 O-218 O-247var BOW93C box33c BOV65B b0651 BOT63B BOX83C BOX63B BOW83C bow530

    BOX34B

    Abstract: bot64a BOX54B sgs-ates transistors bot64 B064S MJ0117 BOW94B BOV64 MJ-01
    Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO (V) Ie Max (A) PD Max (W) fT hFE Min Max (Hz) leBO Max (A) tr Max tf Max TOper Max (8) (8) (Oe) Package Style PNP Darlington TransisLors, (Cont'd) 2N6041 2SBS72A 2SB939A 2SB951A BOX54B B0266A


    Original     		PDF 2N6041 2SBS72A 2SB939A 2SB951A BOX54B B0266A B064S B0700 B0700A BOX34B bot64a sgs-ates transistors bot64 MJ0117 BOW94B BOV64 MJ-01

    collect

    Abstract: MUN5211 MUN5212 MUN5213 MUN5214 MUN5215 MUN5216 MUN5230 MUN5231 MUN5232
    Text: MUN5211 Series NPN Silicon Bias Resistor Transistor 3 P b Lead Pb -Free R1 1 R2 2 SOT-323(SC-70) Maximum Ratings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Collector Current-Continuous Symbol VCEO Value 50 VCBO


    Original     		PDF MUN5211 OT-323 SC-70) 30-Dec-05 OT-323 collect MUN5212 MUN5213 MUN5214 MUN5215 MUN5216 MUN5230 MUN5231 MUN5232

    Untitled

    Abstract: No abstract text available
    Text: MUN5211 Series NPN Silicon Bias Resistor Transistor 3 * “G” Lead Pb -Free R1 1 R2 2 SOT-323(SC-70) Maximum Ratings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Collector Current-Continuous Symbol VCEO Value


    Original     		PDF MUN5211 OT-323 SC-70) OT-323

    MUN5111

    Abstract: MUN5111DW MUN5112 MUN5113 MUN5114 MUN5115 MUN5116 MUN5130 MUN5131 MUN5132
    Text: MUN5111DW Series Dual Bias Resistor Transistor PNP Silicon 6 5 R1 Q2 R2 1 4 6 5 R2 1 Q1 R1 2 2 4 3 SOT-363 SC-88 3 M aximum R atings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Collector Current-Continuous Symbol


    Original     		PDF MUN5111DW OT-363 SC-88) 20-Jan-09 MUN5111 OT-363 MUN5112 MUN5113 MUN5114 MUN5115 MUN5116 MUN5130 MUN5131 MUN5132

    6a mun2111

    Abstract: MUN2112 MUN2111 transistor mun2111 MUN2114 MUN2115 MUN2116 MUN2130 MUN2131 MUN2132
    Text: MUN2111 Series Bias Resistor Transistor PNP Silicon COLLECTOR 3 3 R1 1 BASE 2 R2 1 2 EMITTER SC-59 Maximum Ratings TA=25 C unless otherwise noted Symbol Value Unit Collector-Emitter Voltage VCEO 50 Collector-Base Voltage VCBO 50 Vdc Vdc IC 100 mAdc Rating


    Original     		PDF MUN2111 SC-59 SC-59 6a mun2111 MUN2112 transistor mun2111 MUN2114 MUN2115 MUN2116 MUN2130 MUN2131 MUN2132

    MUN2111

    Abstract: MUN2112 MUN2113 MUN2114 MUN2115 MUN2116 MUN2130 MUN2131 MUN2132
    Text: MUN2111 Series Bias Resistor Transistor PNP Silicon COLLECTOR 3 3 R1 1 BASE 1 R2 2 2 EMITTER SC-59 Maximum Ratings TA=25 C unless otherwise noted Symbol Value Unit Collector-Emitter Voltage VCEO 50 Collector-Base Voltage VCBO 50 Vdc Vdc IC 100 mAdc Rating


    Original     		PDF MUN2111 SC-59 SC-59 MUN2112 MUN2113 MUN2114 MUN2115 MUN2116 MUN2130 MUN2131 MUN2132

    50K MARKING SOT23

    Abstract: No abstract text available
    Text: MMBTA70LT1 SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR SURFACE MOUNT SMALL SIGNAL TRANSISTORS ABSOLUTE MAXIMUM RATINGS at Ta=25℃ Package:SOT-23 Shandong Yiguang Electronic Joint stock Co., Ltd Characteristic Symbol Rating Unit Collector-Emitter Voltage


    Original     		PDF MMBTA70LT1 OT-23 50K MARKING SOT23

    Untitled

    Abstract: No abstract text available
    Text: General Purpose Transistor PNP Silicon MMBTA70LT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 2 MAXIMUM RATINGS CASE 318–08, STYLE 6 Rating Symbol Value Unit Collector–Emitter Voltage V CEO –40 Vdc Emitter–Base Voltage V EBO –4.0 Vdc –100 mAdc Collector Current — Continuous


    Original     		PDF MMBTA70LT1 236AB)

    Untitled

    Abstract: No abstract text available
    Text: BCW29/30LT1 SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR SURFACE MOUNT SMALL SIGNAL TRANSISTORS ABSOLUTE MAXIMUM RATINGS at Ta=25℃ Package:SOT-23 Shandong Yiguang Electronic Joint stock Co., Ltd Characteristic Symbol Rating Unit Collector-Base Voltage


    Original     		PDF BCW29/30LT1 OT-23

    M31 transistor

    Abstract: M313 TRANSISTOR M31 marking transistor M31 marking M31 x 1.0 6H MMBTA70LT1
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor PNP Silicon MMBTA70LT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 2 MAXIMUM RATINGS CASE 318–08, STYLE 6 Rating Symbol Value Unit Collector–Emitter Voltage V CEO –40 Vdc Emitter–Base Voltage V EBO –4.0


    Original     		PDF MMBTA70LT1 236AB) M31 transistor M313 TRANSISTOR M31 marking transistor M31 marking M31 x 1.0 6H MMBTA70LT1

    TW88

    Abstract: MUN5111 MUN5111DW MUN5112 MUN5113 MUN5114 MUN5115 MUN5116 MUN5130 MUN5131
    Text: MUN5111DW Series 6 Dual Bias Resistor Transistor PNP Silicon 5 4 R1 Q2 6 5 1 Q1 R2 2 2 3 SOT-363 SC-88 R1 1 4 R2 3 M aximum R atings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Collector Current-Continuous Symbol


    Original     		PDF MUN5111DW OT-363 SC-88) 20-Jan-09 MUN5111 OT-363 TW88 MUN5112 MUN5113 MUN5114 MUN5115 MUN5116 MUN5130 MUN5131

    BCW60ALT1

    Abstract: No abstract text available
    Text: BCW60LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER,LOW LEVEL&LOW NOISE * Collector Current: Ic= 100mA * High Total Power Dissipation:Pc=225mW ABSOLUTE MAXIMUM RATINGS at Ta=25℃


    Original     		PDF BCW60LT1 100mA 225mW OT-23 BCW60ALT1

    transistor M7A

    Abstract: M7A transistor
    Text: General Purpose Transistors PNP Silicon 3 COLLECTOR BCW29LT1 BCW30LT1 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO –32 Vdc Collector–Base Voltage V CBO –32 Vdc Emitter–Base Voltage V –5.0 Vdc –100


    Original     		PDF BCW29LT1 BCW30LT1 236AB) BCW29LT1 transistor M7A M7A transistor

    Untitled

    Abstract: No abstract text available
    Text: General Purpose Transistor PNP Silicon MMBTA70LT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 2 MAXIMUM RATINGS CASE 318–08, STYLE 6 Rating Symbol Value Unit Collector–Emitter Voltage V CEO –40 Vdc Emitter–Base Voltage V EBO –4.0 Vdc –100 mAdc Collector Current — Continuous


    Original     		PDF MMBTA70LT1 236AB)

    QL8X12B-XPL68C

    Abstract: 80c96 1X3HDR PT3868 C458 R486 r946 MODJACK MT4C16270DJ-6 CR69
    Text: A SWITCHED ETHERNET REFERENCE DESIGN SCHEMATICS Switched Ethernet Reference Design Description Order Number: 272907-001 July, 1996 Appendix A: Switched Ethernet Reference Design Schematics Index to Reference Design Schematics Circuit Sheets +3.3V Supply for Processor .3


    Original     		PDF AM85C30) QL8X12B-XPL68C 80c96 1X3HDR PT3868 C458 R486 r946 MODJACK MT4C16270DJ-6 CR69

    BCW29

    Abstract: BCW29LT1 BCW30 BCW30LT1 M74 marking MARKING M73
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon 3 COLLECTOR BCW29LT1 BCW30LT1 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO –32 Vdc Collector–Base Voltage V CBO –32 Vdc Emitter–Base Voltage


    Original     		PDF BCW29LT1 BCW30LT1 236AB) BCW29LT1 BCW29 BCW30 BCW30LT1 M74 marking MARKING M73

    MPS3904

    Abstract: 1N916 MMBTA20LT1 MPS390
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Amplifier NPN Silicon MMBTA20LT1 3 COLLECTOR 3 1 BASE 1 2 EMITTER 2 CASE 318–08, STYLE 6 SOT–23 TO–236AB MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 40 Vdc Emitter–Base Voltage


    Original     		PDF MMBTA20LT1 236AB) MPS3904 1N916 MMBTA20LT1 MPS390

    Untitled

    Abstract: No abstract text available
    Text: General Purpose Amplifier NPN Silicon MMBTA20LT1 3 COLLECTOR 3 1 BASE 1 2 EMITTER 2 CASE 318–08, STYLE 6 SOT–23 TO–236AB MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 40 Vdc Emitter–Base Voltage V EBO 4.0 Vdc IC 100 mAdc


    Original     		PDF MMBTA20LT1 236AB)

    mdp1403

    Abstract: 330 ohm resistor pack MDP1801 MDP1405 MDP1603 MDP18 MDP1401 MDP1601 MDP1605 MDP18-01
    Text: MODELS MDP14, MDP16, MDP18 Thick Film Resistor Networks Dual-ln-Line, Molded 01, 03, 05 Schematics FEATURES • .160“ [4.06] maximum seated height •Reduces total assembly costs • Rugged, molded case construction ■Compatible with automatic inserting equipment


    OCR Scan     		PDF MDP14, MDP16, MDP18 100PPM/ MDPXX-01 Pull-up/Pull70 MDP14-03-101G MDP14-05-221/271G 14-pin mdp1403 330 ohm resistor pack MDP1801 MDP1405 MDP1603 MDP18 MDP1401 MDP1601 MDP1605 MDP18-01

    Untitled

    Abstract: No abstract text available
    Text: A C O M P A N Y OF M O DELS M D P 1 4 M D P 16, M D P 18 T h ic k Film R e s is to r N e tw o rk s Dual-ln-Line, Molded 01, 03, 05 Schem atics FEATURES • .160" [4.06] maximum seated height Reduces total assembly costs • Rugged, molded case construction


    OCR Scan     		PDF 100PPM/Â MDPXX-01 MDP14-03-101G MDP14-05-221/271G 14-pin

    ATIC 91

    Abstract: ATIC 62 MDP1405
    Text: MODELS MDP14 and MDP16 Thick Film Resistor Networks Dual-In-Line, Molded DIP 01, 03, 05 Schematics FEATURES .160" [4.06mm] maximum seated height Reduces total assembly costs Rugged, molded case construction Compatible with automatic inserting equipment Highly stable thick film


    OCR Scan     		PDF MDP14 MDP16 100PPM/ MDPXX-01 P14-05-221/271G ATIC 91 ATIC 62 MDP1405

    2N6258

    Abstract: 2N5133 2N4901 2N5055 2N5129 2N5143 2N5872 2N6030 2N6132 2N6278
    Text: _ 0 2 5 8 3 5 4 ADVANCED SEMICONDUCTOR 82D 0 0 0 4 6 D ~J - o ÔE DEI 0250354 □0D0G4b 4T SILICON ADVANCED SEMICONDUCTOR .T R A N S I S T O R S POLARITY PNP PNP PNP' PNP PNP PNP PNP PNP PNP PNP NPN NPN NPN NPN NPN NPN


    OCR Scan     		PDF 2N4900 2N4901 2N4902 2N4903 2N4904 2N4905 2N4906 2N4907 2N4908 2N4909 2N6258 2N5133 2N5055 2N5129 2N5143 2N5872 2N6030 2N6132 2N6278