1.27 GHZ TRANSISTOR Search Results

1.27 GHZ TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

1.27 GHZ TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
1.27 GHz transistor Abstract: transistor j 127 B15V180 Text: BIPOLARICS, INC. Part Number B15V180 MEDIUM POWER SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET DESCRIPTION AND APPLICATIONS: FEATURES: • Bipolarics' B15V180 is a high performance silicon bipolar transistor intended for medium power linear and Class C	Original	B15V180 B15V180 1.27 GHz transistor transistor j 127	PDF
B30V1320 Abstract: transistor j 127 Text: BIPOLARICS, INC. Part Number B30V1320 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: DESCRIPTION AND APPLICATIONS: • High Output Power 8W @ 1.0 GHz • High Gain Bandwidth Product Bipolarics' B30V1320 is a high performance, low cost silicon bipolar	Original	B30V1320 B30V1320 transistor j 127	PDF
B30V1160 Abstract: B30V1320 1.27 GHz transistor transistor j 127 Text: BIPOLARICS, INC. Part Number B30V1160 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: DESCRIPTION AND APPLICATIONS: • High Output Power 2W @ 1.0 GHz • High Gain Bandwidth Product f = 6.0 GHz @ IC = 400 mA t Bipolarics' B30V1160 is a high performance, low cost silicon bipolar	Original	B30V1160 B30V1160 B30V1320 B30V1480 1.27 GHz transistor transistor j 127	PDF
transistor j 127 Abstract: B20V1160 B30V1320 Text: BIPOLARICS, INC. Part Number B20V1160 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: DESCRIPTION AND APPLICATIONS: • High Output Power 2W @ 1.0 GHz • High Gain Bandwidth Product f = 8.0 GHz @ IC = 320 mA t Bipolarics' B20V1160 is a high performance, low cost silicon bipolar	Original	B20V1160 B20V1160 B30V1320 B30V1480 transistor j 127	PDF
B20V1160B Abstract: No abstract text available Text: BIPOLARICS, INC Part Number B20V1160B SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: • High • Common Base Package Configuration Reliability Gold Metallization Nitride Passivation • High Output Power 4 W @ 1.0 GHz • Diffused Ballast Resistors	Original	B20V1160B B20V1160B	PDF
B30V1160B Abstract: No abstract text available Text: BIPOLARICS, INC Part Number B30V1160B SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: • High • Common Base Package Configuration Reliability Gold Metallization Nitride Passivation • High Output Power 4 W @ 1.0 GHz • Diffused Ballast Resistors	Original	B30V1160B B30V1160B	PDF
B30V180B Abstract: No abstract text available Text: BIPOLARICS, INC Part Number B30V180B SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: • Common Base Package Configuration • High Reliability Gold Metallization Nitride Passivation • High Output Power 1 W @ 1.0 GHz • High Gain Bandwidth Product	Original	B30V180B B30V180B	PDF
c 5929 transistor Abstract: transistor k 2541 Transistor C 4927 741 LEM UPA802T 2955 transistor lem 723 733 transistor c 5299 Text: SILICON TRANSISTOR UPA802T NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • • SMALL PACKAGE STYLE: 2 NE681 Die in a 2 mm x 1.25 mm package LOW NOISE FIGURE: NF = 1.4 dB TYP at 1 GHz HIGH GAIN: \|S21E\|2 = 12 dB TYP at 1 GHz HIGH GAIN BANDWIDTH: fT = 7 GHz	Original	UPA802T NE681 UPA802T UPA802T-T1-A 24-Hour c 5929 transistor transistor k 2541 Transistor C 4927 741 LEM 2955 transistor lem 723 733 transistor c 5299	PDF
transistor s11 s12 s21 s22 Abstract: UPA802T 741 LEM hfe 4538 c 3420 transistor Transistor C 4927 transistor c 5299 transistor zo 607 NE681 transistor j50 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • • UPA802T OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE681 Die in a 2 mm x 1.25 mm package LOW NOISE FIGURE: NF = 1.4 dB TYP at 1 GHz HIGH GAIN: \|S21E\|2 = 12 dB TYP at 1 GHz HIGH GAIN BANDWIDTH: fT = 7 GHz	Original	UPA802T NE681 UPA802T UPA802T-T1 24-Hour transistor s11 s12 s21 s22 741 LEM hfe 4538 c 3420 transistor Transistor C 4927 transistor c 5299 transistor zo 607 transistor j50	PDF
ALR060 Abstract: ASI10513 1402 Transistor Text: ALR060 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° The ASI ALR060 is Designed for 1200 – 1400 MHz, L-Band Applications. .040 x 45° C 2xB ØE D F G H FEATURES: I • Internal Input/Output Matching Network • PG = 6.5 dB at 60 W/1400 MHz	Original	ALR060 ALR060 ASI10513 1402 Transistor	PDF
77505 Abstract: 2310 fx MMA710-SOT89TR 75558 TRANSISTOR 6822 MMA710-SOT89 2944 3443 SOT-89 1000DB MMA710 Text: MMA710-SOT89 Darlington HBT Amplifier FEATURES G • 100 KHz to 4 GHz Bandwidth • +21 dBm Output Power at P-1dB Compression • +35 dBm Third Order Intercept MMA 710 The MMA710 is a packaged InGaP Heterojunction Bipolar Transistor HBT Darlington amplifier in a low cost SOT-89 surface mount	Original	MMA710-SOT89 MMA710 OT-89 MMA710-SOT89TR MMA710-SOT89EB 77505 2310 fx MMA710-SOT89TR 75558 TRANSISTOR 6822 MMA710-SOT89 2944 3443 SOT-89 1000DB	PDF
A1761 Abstract: a1776 A1733 Text: MOTOROLA Order this document by MRF183/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF183 MRF183S N–Channel Enhancement–Mode Lateral MOSFETs • High Gain, Rugged Device 45 WATTS, 1.0 GHz, 28 VOLTS LATERAL N–CHANNEL	Original	MRF183/D MRF183 MRF183S MRF183/D* A1761 a1776 A1733	PDF
uln 2008 Abstract: BFP740 uln 2008 datasheet 825000 michael hiebel fundamentals of vector analysis Digital Oscilloscope Preamp Digital Oscilloscope Preamplifier BFP740 equivalent BFP740F LQP10A Text: Application Note, Rev. 1.0, November 2008 Application Note No. 169 BFP740 SiGe:C Ultra Low Noise RF Transistor in 5 – 6 GHz LNA Application with 15 dB Gain, 1.3 dB Noise Figure & ~ 100 nanosecond Turn-On / Turn-Off Time For 802.11a & 802.11n “MIMO” Wireless LAN Applications	Original	BFP740 uln 2008 uln 2008 datasheet 825000 michael hiebel fundamentals of vector analysis Digital Oscilloscope Preamp Digital Oscilloscope Preamplifier BFP740 equivalent BFP740F LQP10A	PDF
UPA802T Abstract: a 3120 0537 741 LEM NE681 S21E UPA802T-T1 UPA802T-T1-A 22S21 transistor c 5299 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • • UPA802T OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE681 Die in a 2 mm x 1.25 mm package LOW NOISE FIGURE: NF = 1.4 dB TYP at 1 GHz HIGH GAIN: \|S21E\|2 = 12 dB TYP at 1 GHz HIGH GAIN BANDWIDTH: fT = 7 GHz	Original	UPA802T NE681 UPA802T a 3120 0537 741 LEM S21E UPA802T-T1 UPA802T-T1-A 22S21 transistor c 5299	PDF

UPA102G Abstract: UPA102B Text: UPA102B UPA102G TRANSISTOR ARRAY FEATURES CONNECTION DIAGRAM Top View • TWO BUILT-IN DIFFERENTIAL AMPLIFIER CIRCUITS: (9 GHz Single Transistors) • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS: UPA102B: Superior thermal dissipation due to studded	Original	UPA102B UPA102G UPA102B: 14-pin UPA102G: UPA102B/G 14-pin 24-Hour UPA102G UPA102B	PDF
A1727 Abstract: No abstract text available Text: MOTOROLA Order this document by MRF182/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF182 MRF182S N–Channel Enhancement–Mode Lateral MOSFETs • High Gain, Rugged Device • Broadband Performance from HF to 1 GHz	Original	MRF182/D MRF182 MRF182S MRF182/D* A1727	PDF
SPA-1318 Abstract: No abstract text available Text: Preliminary Product Description SPA-1318 Stanford Microdevices’ SPA-1318 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial	Original	SPA-1318 SPA-1318 Consumpt003 AN-029 EDS-101429	PDF
2N4260 Abstract: 2N4261 Text: TYPES 2N4260, 2N4261 P-N-P SILICON TRANSISTORS B U L L E T IN N O . O L -S 7 3 1 1 9 3 3 , J U N E 1 9 7 3 DESIGNED FOR VHF AND UHF AMPLIFIER APPLICATIONS • High f j . . . 2 GHz Min 2N4261 • Low Capacitances . . . 2.5 pF Max Ccb and Ceb • Calculated f maxt . . . 1.27 GHz Min (2N4261)	OCR Scan	2N4260, 2N4261 2N4261) 2N4260	PDF
mm001 Abstract: MM8011 MM8010 MM8008 2sc 684 sonde 813 Ghz oscillator Text: M M 8 0 0 8 SILICON MM8010 MM8011 NPN SILICON RF POWER TRANSISTORS NPN SILICON RF POWER TRANSISTORS . . . designed p rim a rily fo r oscillator, frequency m u ltip lie r, and UH'F a m plifier applications in m ilita ry and industrial equipment. • High Power O u tp u t (Oscillator) —	OCR Scan	MM8008 MM8010 MM8011 MM8008) MM8010) MM8011) MM8008, mm001 MM8011 MM8008 2sc 684 sonde 813 Ghz oscillator	PDF
2SC2644 Abstract: No abstract text available Text: TO SH IBA _ 2SC2644 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2644 Unit in mm VH F-U HF BAND WIDEBAND AMPLIFIER APPLICATIONS • • « High Gain Low IMD fp = 4 GHz Typ. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC	OCR Scan	2SC2644 SC-43 000707EAA1 500MHz 2SC2644	PDF
c 5929 transistor Abstract: transistor c 5299 Transistor C 4927 transistor rf m 9860 IC 14093 m 9860 transistor UPA802T transistor 6851 8425 nec transistor on 4436 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA802T OUTLINE DIMENSIONS SMALL PACKAGE STYLE: 2 NE681 Die in a 2 mm x 1.25 mm package LOW NOISE FIGURE: NF = 1.4 dB TYP at 1 GHz HIGH GAIN: \|S2 1E\|2 = 12 dB TYP at 1 GHz HIGH GAIN BANDWIDTH: fr = 7 GHz LOW CURRENT OPERATION	OCR Scan	NE681 UPA802T UPA802T UPA802T-T1 24-Hour c 5929 transistor transistor c 5299 Transistor C 4927 transistor rf m 9860 IC 14093 m 9860 transistor transistor 6851 8425 nec transistor on 4436	PDF
1445s Abstract: transistor D 1761 PH1617 Text: ^fccO'H m an A M P com pany Wireless Bipolar Power Transistor, 10W 1.6- 1.7 GHz _ .744 _ 18.90 Features • • • • • • PH1617-10 Designed for Linear Amplifier Applications Class AB: -33 dBc Typ 3rd IMD at 10 Watts PKP Class A. +49 dBm Typ 3rd Order Intercept Point	OCR Scan	PH1617-10 1445s transistor D 1761 PH1617	PDF
Untitled Abstract: No abstract text available Text: NPN MEDIUM POWER UHF-VHF TRANSISTOR NE74000 NE74014 FEATURES_ DESCRIPTION • HIGH GAIN BANDWIDTH PRODUCT: fT = 2.2 GHz The NE740 series of NPN silicon transistors is designed for wide bandwidth VHF and UHF amplifiers. Excellent intermodulation characteristics and low noise make the series	OCR Scan	NE74000 NE74014 NE740 NE90115 quali16	PDF
2SH20 Abstract: 2SC2498 Text: TOSHIBA 2SC2498 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2498 Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATION . 5.1 M AX. M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage Emitter-Base Voltage	OCR Scan	2SC2498 S21el2 2SC2498. 2SH20 2SC2498	PDF

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1.27 GHZ TRANSISTOR Search Results

1.27 GHZ TRANSISTOR Result Highlights (5)

1.27 GHZ TRANSISTOR Datasheets Context Search

1.27 GHz transistor

B30V1320

B30V1160

transistor j 127

B20V1160B

B30V1160B

B30V180B

c 5929 transistor

transistor s11 s12 s21 s22

ALR060

77505

A1761

uln 2008

UPA802T

UPA102G

A1727

SPA-1318

2N4260

mm001

2SC2644

c 5929 transistor

1445s

Untitled

2SH20