GTO thyristor 4500V 4000A
Abstract: FAST SWITCHING THYRISTOR ST GTO thyristor driver 10A fast Gate Turn-off Thyristor GTO thyristor GTO gate drive unit mitsubishi fast thyristor 200A gate control circuits GTO 4.5kv MITSUBISHI GATE TURN-OFF THYRISTOR gto gto Gate Drive circuit
Text: IEEE Industry Applications Society Annual Meeting St. Louis, Missouri, October 12-16, 1998 A NEW GATE COMMUTATED TURN-OFF THYRISTOR AND COMPANION DIODE FOR HIGH POWER APPLICATIONS John F. Donlon*, Eric R. Motto*, M. Yamamoto*, Takahiko Iida* *Powerex, Incorporated, Youngwood, PA 15697 USA
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500V/1500A
FD1500BV-90DA
500V/500A
FD500JV-90DA
GTO thyristor 4500V 4000A
FAST SWITCHING THYRISTOR ST
GTO thyristor driver
10A fast Gate Turn-off Thyristor
GTO thyristor
GTO gate drive unit mitsubishi
fast thyristor 200A gate control circuits
GTO 4.5kv
MITSUBISHI GATE TURN-OFF THYRISTOR gto
gto Gate Drive circuit
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transistor JF
Abstract: ST1000EX21
Text: ST1000EX21 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR TENTATIVE ST1000EX21 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm All Electric contacts by Pressure Structure and Airtight Package Anti−Parallel Fast Recovery Diode in This Package
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ST1000EX21
transistor JF
ST1000EX21
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diode k 1140
Abstract: No abstract text available
Text: Technische Information / Technical Information Schnelle beschaltungslose Diode Fast Hard Drive Diode D 911SH 45T SH Features: • Speziell entwickelt für beschaltungslosen Betrieb • Specially designed for snubberless operation • Niedrige Verluste, weiches Ausschalten
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911SH
34DSH65
diode k 1140
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Schneider Electric sh 140
Abstract: No abstract text available
Text: Technische Information / Technical Information Schnelle beschaltungslose Diode Fast Hard Drive Diode D 911SH 45T SH Features: • Speziell entwickelt für beschaltungslosen Betrieb • Specially designed for snubberless operation • Niedrige Verluste, weiches Ausschalten
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911SH
34DSH65
Schneider Electric sh 140
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Schneider Electric sh 140
Abstract: No abstract text available
Text: Technische Information / Technical Information Schnelle beschaltungslose Diode Fast Hard Drive Diode D 911SH 45T SH Features: • Speziell entwickelt für beschaltungslosen Betrieb • Specially designed for snubberless operation • Niedrige Verluste, weiches Ausschalten
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911SH
34DSH65
Schneider Electric sh 140
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transistor JF
Abstract: No abstract text available
Text: ST1000EX21 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR TENTATIVE ST1000EX21 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm All Electric contacts by Pressure Structure and Airtight Package Anti−Parallel Fast Recovery Diode in This Package
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ST1000EX21
ST1000EX21
1250g
transistor JF
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Untitled
Abstract: No abstract text available
Text: Technische Information / Technical Information Schnelle beschaltungslose Diode Fast Hard Drive Diode D 911SH 45T SH Features: • Speziell entwickelt für beschaltungslosen Betrieb • Specially designed for snubberless operation • Niedrige Verluste, weiches Ausschalten
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911SH
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K75T60
Abstract: 400w power supply K75T60 igbt ikw75n60
Text: IKW75N60T q TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C
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IKW75N60T
PG-TO-247-3-1
K75T60
400w power supply
K75T60 igbt
ikw75n60
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K75T60
Abstract: No abstract text available
Text: IKW75N60T q TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C
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IKW75N60T
K75T60
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K75T60
Abstract: IKW75N60T PG-TO-247-3-21 600V75A
Text: IKW75N60T q TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C
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IKW75N60T
PG-TO-247-3-21
K75T60
IKW75N60T
PG-TO-247-3-21
600V75A
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k75t60
Abstract: K75T60 igbt K75T60 datasheet IKW75N60T ikw75n60 PG-TO-247-3-21 diode 10a 400v k75t6
Text: TrenchStop Series IKW75N60T q Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C
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IKW75N60T
PG-TO-247-3-21
k75t60
K75T60 igbt
K75T60 datasheet
IKW75N60T
ikw75n60
PG-TO-247-3-21
diode 10a 400v
k75t6
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k75t60
Abstract: K75T60 datasheet IKW75N60T k75t6 Q67040S4719
Text: TrenchStop Series IKW75N60T q Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs
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IKW75N60T
Dec-04
k75t60
K75T60 datasheet
IKW75N60T
k75t6
Q67040S4719
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Untitled
Abstract: No abstract text available
Text: Data Sheet ACDC-3400 IND CAT IV Industrial True RMS Clamp Meter This CAT IV rated clamp is ideal for industrial applications and utilities that require an extra level of safety. Includes True RMS sensing for accuracy and dependability. Extra large jaw to accommodate wide diameter wires.
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ACDC-3400
TL-1500
877-AMPROBE
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Untitled
Abstract: No abstract text available
Text: Data Sheet ACDC-3400 IND CAT IV Industrial True RMS Clamp Meter This CAT IV rated clamp is ideal for industrial applications and utilities that require an extra level of safety. Includes True RMS sensing for accuracy and dependability. Extra large jaw to accommodate wide diameter wires.
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ACDC-3400
TL-1500
877-AMPROBE
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Untitled
Abstract: No abstract text available
Text: TrenchStop Series IKW75N60T q Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C
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IKW75N60T
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Untitled
Abstract: No abstract text available
Text: TRENCHSTOP Series IKW75N60T q Low Loss DuoPack : IGBT in TRENCHSTOP® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C • • • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C
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IKW75N60T
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Untitled
Abstract: No abstract text available
Text: TrenchStop Series IKW75N60T q Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C
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IKW75N60T
PG-TO-247-3
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Diode 400V 20A
Abstract: SKW20N60HS
Text: Preliminary Datasheet SKW20N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation 12 µJ/A • Short circuit withstand time – 10 µs • NPT-Technology for 600V applications offers: - parallel switching capability - very tight parameter distribution
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SKW20N60HS
O-247AC
Q67040-S4242-A001
Sep-01
Diode 400V 20A
SKW20N60HS
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K75T60
Abstract: K75T60 datasheet IKW75N60T 000823 ikw75n60 K75T60 igbt PG-TO-247-3 600v 75a
Text: TrenchStop Series IKW75N60T q Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C
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IKW75N60T
PG-TO-247-3
K75T60
K75T60 datasheet
IKW75N60T
000823
ikw75n60
K75T60 igbt
PG-TO-247-3
600v 75a
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ST T4 3560
Abstract: T2 AL 250V 150Vt GA600HD25S
Text: PD - 94341 GA600HD25S StandardTM Speed IGBT SINGLE SWITCH IGBT DOUBLE INT-A-Pak Features • Standard speed, optimized for battery powered application • Very low conduction losses • HEXFREDTM antiparallel diodes with ultra-soft recovery • Industry standard package
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GA600HD25S
ST T4 3560
T2 AL 250V
150Vt
GA600HD25S
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IGBT DRIVE 50V 300A
Abstract: LTA 902 GA600GD25S AK 1262 igbt "internal thermistor" int-a-pak
Text: PD -50071B GA600GD25S SINGLE SWITCH IGBT DOUBLE INT-A-PAK StandardTM Speed IGBT Features • Standard speed, optimized for battery powered application • Very low conduction losses • HEXFREDTM antiparallel diodes with ultra-soft recovery • Industry standard package
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-50071B
GA600GD25S
Collect52-7105
IGBT DRIVE 50V 300A
LTA 902
GA600GD25S
AK 1262
igbt "internal thermistor" int-a-pak
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fast recovery diode 1200V 100ns
Abstract: Q67040-S4281 SKW15N120
Text: Preliminary SKW15N120 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers:
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SKW15N120
O-247AC
Q67040-S4281
Mar-00
fast recovery diode 1200V 100ns
Q67040-S4281
SKW15N120
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Untitled
Abstract: No abstract text available
Text: P g jp i G E C PLESSEY DS4340-4.0 GP1000DHB06S POWERLINE N-CHANNELIGBT MODULE TYPICAL KEY PARAMETERS 600V v CES v* CE Mt 2.1V 1000A ^C(CONT) 2000A ^C(PK) 290ns tr 430ns t, APPLICATIONS • High Power Switching. ■ Motor Control. ■ UPS. ■ AC And DC Servo Drive Amplifiers.
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DS4340-4
GP1000DHB06S
290ns
430ns
44lbs
70lbs
88lbs
18lbs
1500g
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ST1000EX21
Abstract: transistor JF 1000A diode 5V IGBT 1000A
Text: TOSHIBA ST1000EX21 TENTATIVE TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR ST1000EX21 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • All Electric contacts by Pressure Structure and Airtight Package Anti-Parallel Fast Recovery Diode in This Package
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ST1000EX21
60MAX.
1250g
ST1000EX21
transistor JF
1000A diode 5V
IGBT 1000A
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