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    100B101 Price and Stock

    Kyocera AVX Components 100B101JW500XT1K

    CAP CER 100PF 500V P90 1111
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    DigiKey 100B101JW500XT1K Cut Tape 6,159 1
    • 1 $6.26
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    100B101JW500XT1K Digi-Reel 6,159 1
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    Mouser Electronics 100B101JW500XT1K 503
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    Kyocera AVX Components 100B101FW500XT1K

    CAP CER 100PF 500V P90 1111
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    DigiKey 100B101FW500XT1K Cut Tape 5,661 1
    • 1 $14.12
    • 10 $10.107
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    100B101FW500XT1K Digi-Reel 5,661 1
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    Kyocera AVX Components 100B101JTN500XT1K

    CAP CER 100PF 500V P90 1111
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    DigiKey 100B101JTN500XT1K Cut Tape 4,805 1
    • 1 $7
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    100B101JTN500XT1K Digi-Reel 4,805 1
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    • 100 $3.6405
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    100B101JTN500XT1K Reel 4,000 1,000
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    Kyocera AVX Components 100B101GT500XT1K

    CAP CER 100PF 500V P90 1111
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    DigiKey 100B101GT500XT1K Cut Tape 2,745 1
    • 1 $10.25
    • 10 $7.194
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    100B101GT500XT1K Digi-Reel 2,745 1
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    • 10 $7.194
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    Richardson RFPD 100B101GT500XT1K 1,000
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    Kyocera AVX Components 100B101KT500XT

    CAP CER 100PF 500V P90 1111
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    DigiKey 100B101KT500XT Digi-Reel 518 1
    • 1 $8.27
    • 10 $5.738
    • 100 $4.3899
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    100B101KT500XT Cut Tape 518 1
    • 1 $8.27
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    100B101KT500XT Reel 500 500
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    Mouser Electronics 100B101KT500XT 678
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    100B101 Datasheets (25)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    100B-1011F Pulse Electronics Military & Aerospace Transformers - Pulse Transformers - XFMR CHOKE QUAD 100BT SMT PBC Original PDF
    100B-1018 iNRCORE EXTMP XFMR 100BT SMG COM PBC Original PDF
    100B-1018 iNRCORE EXTMP XFMR 100BT SMG COM PBC Original PDF
    100B-1018 Pulse Electronics EXTMP XFMR 100BT SMG COM PBC Original PDF
    100B-1018T iNRCORE EXTMP XFMR 100BT SMG COM PBC Original PDF
    100B-1018T iNRCORE EXTMP XFMR 100BT SMG COM PBC Original PDF
    100B-1018T Pulse Electronics EXTMP XFMR 100BT SMG COM PBC Original PDF
    100B-1018X iNRCORE EXTMP XFMR 100BT SMG COM PBC Original PDF
    100B-1018X Pulse Electronics EXTMP XFMR 100BT SMG COM PBC Original PDF
    100B-1018XT iNRCORE EXTMP XFMR 100BT SMG COM PBC Original PDF
    100B-1018XT Pulse Electronics EXTMP XFMR 100BT SMG COM PBC Original PDF
    100B101FT500XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 100PF 500V P90 1111 Original PDF
    100B101FT500XT1K American Technical Ceramics Ceramic Capacitor 100PF 500V P90 1111 Original PDF
    100B101FW500XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 100PF 500V P90 1111 Original PDF
    100B101FW500XT1K American Technical Ceramics Ceramic Capacitor 100PF 500V P90 1111 Original PDF
    100B101GT500XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 100PF 500V P90 1111 Original PDF
    100B101GT500XT1K American Technical Ceramics Ceramic Capacitor 100PF 500V P90 1111 Original PDF
    100B101JP500XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 100PF 500V P90 1111 Original PDF
    100B101JT500XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 100PF 500V P90 1111 Original PDF
    100B101JT500XT1K American Technical Ceramics Ceramic Capacitor 100PF 500V P90 1111 Original PDF

    100B101 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P9220H Rev. 0, 10/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6P9220HR3 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of


    Original     		PDF MRF6P9220H MRF6P9220HR3

    100B101JW

    Abstract: 232272461009 465B A114 A115 AN1955 JESD22 MRF7S18170H MRF7S18170HR3 MRF7S18170HSR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S18170H Rev. 0, 10/2006 RF Power Field Effect Transistors MRF7S18170HR3 MRF7S18170HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1805 to


    Original     		PDF MRF7S18170H MRF7S18170HR3 MRF7S18170HSR3 MRF7S18170HR3 DataMRF7S18170H 100B101JW 232272461009 465B A114 A115 AN1955 JESD22 MRF7S18170H MRF7S18170HSR3

    tantulum capacitor

    Abstract: 8VSB NIPPON CAPACITORS datasheet dvbt transmitter dvbt transmitter ECE capacitor rf push pull mosfet power amplifier A114 Nippon chemi AN1955
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P3300H Rev. 0, 9/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6P3300HR3 MRF6P3300HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance


    Original     		PDF MRF6P3300H MRF6P3300HR3 MRF6P3300HR5 MRF6P3300HR3 tantulum capacitor 8VSB NIPPON CAPACITORS datasheet dvbt transmitter dvbt transmitter ECE capacitor rf push pull mosfet power amplifier A114 Nippon chemi AN1955

    J294

    Abstract: 200B104MW 465B A114 A115 AN1955 JESD22 MRF7S19170HR3 MRF7S19170HSR3 MRF7S19170HS
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S19170H Rev. 0, 10/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19170HR3 MRF7S19170HSR3 Designed for CDMA base station applications with frequencies from 1930 to


    Original     		PDF MRF7S19170H MRF7S19170HR3 MRF7S19170HSR3 MRF7S19170HR3 DataMRF7S19170H J294 200B104MW 465B A114 A115 AN1955 JESD22 MRF7S19170HSR3 MRF7S19170HS

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35005N Rev. 5, 1/2008 MRFG35005NT1 replaced by MRFG35005ANT1. MRFG35005NT1 Gallium Arsenide PHEMT Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35005N MRFG35005NT1 MRFG35005ANT1. MRFG35005NT1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35005MT1 Rev. 3, 1/2006 Replaced by MRFG35005NT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		PDF MRFG35005MT1 MRFG35005NT1.

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRFG35010MT1 Rev. 4, 7/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistors MRFG35010NT1 MRFG35010MT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Devices are unmatched and are suitable for use in Class


    Original     		PDF MRFG35010MT1 MRFG35010NT1 MRFG35010MT1

    transistor GT 1081

    Abstract: MRFG35010AR5
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010A Rev. 0, 5/2006 Gallium Arsenide PHEMT MRFG35010AR1 MRFG35010AR5 RF Power Field Effect Transistor Designed for WiMAX, WLL/MMDS or UMTS driver and final applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for


    Original     		PDF MRFG35010A MRFG35010AR1 MRFG35010AR5 MRFG35010A transistor GT 1081 MRFG35010AR5

    100B201JT500XT

    Abstract: CRCW12063900FKEA 365 pF variable capacitor 100B120JT500XT GX0300-55-22 MRF282
    Text: Freescale Semiconductor Technical Data Document Number: MRF282-2 Rev. 17, 10/2008 RF Power Field Effect Transistor MRF282ZR1 Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and


    Original     		PDF MRF282--2 MRF282ZR1 458C-03, NI-200Z MRF282--2 100B201JT500XT CRCW12063900FKEA 365 pF variable capacitor 100B120JT500XT GX0300-55-22 MRF282

    J209

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S21170H Rev. 0, 5/2006 RF Power Field Effect Transistors MRF7S21170HR3 MRF7S21170HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to


    Original     		PDF MRF7S21170H MRF7S21170HR3 MRF7S21170HSR3 MRF7S21170H J209

    13009 TRANSISTOR equivalent

    Abstract: D 13009 K transistor M 9718 4221 motorola transistor transistor E 13009 MRFG35030 transistor d 13009 MRFG35030R5 transistor 9718 transistor E 13009 equivalent
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRFG35030R5/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line Gallium Arsenide PHEMT Freescale Semiconductor, Inc. RF Power Field Effect Transistor MRFG35030R5 Designed for WLL base station applications with frequencies from 3400 to


    Original     		PDF MRFG35030R5/D MRFG35030R5 13009 TRANSISTOR equivalent D 13009 K transistor M 9718 4221 motorola transistor transistor E 13009 MRFG35030 transistor d 13009 MRFG35030R5 transistor 9718 transistor E 13009 equivalent

    ferroxcube for ferrite beads

    Abstract: MRF282
    Text: Freescale Semiconductor Technical Data Document Number: MRF282 Rev. 14, 5/2005 RF Power Field Effect Transistors MRF282SR1 MRF282ZR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and


    Original     		PDF MRF282 MRF282SR1 MRF282ZR1 MRF282 ferroxcube for ferrite beads

    marking 0619

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRFG35005MT1 Rev. 1, 1/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35005MT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35005MT1 MRFG35005MT1 marking 0619

    m28748

    Abstract: 107R1001 m28748 winchester MRAC 107-0903-2A M39029/34-440 Winchester Electronics 100-51020S m39029/35-275 Crimp spec for mil-c-39029 socket 100-1020P
    Text: Removable Contacts Watertown, Connecticut 06795-0500 • Copper Alloy, gold plated. Closed entry type machined from copper alloy, gold plated. Complete line available. Includes automatic pneumatic, pneumatic hand operated, hand operated crimping tools, insertion and


    Original     		PDF 100-8001P 100-8000S 100-8000P RG178/U RG196/U RG161/U RG179/U RG187/U 100-8001S 100-8003P m28748 107R1001 m28748 winchester MRAC 107-0903-2A M39029/34-440 Winchester Electronics 100-51020S m39029/35-275 Crimp spec for mil-c-39029 socket 100-1020P

    RF FET TRANSISTOR 3 GHZ

    Abstract: A113 MRFG35003NT1
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35003N Rev. 4, 1/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003NT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35003N MRFG35003NT1 RF FET TRANSISTOR 3 GHZ A113 MRFG35003NT1

    6 017 03 61

    Abstract: A113 MRFG35010MT1 MRFG35010NT1 D55342M07
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010MT1 Rev. 5, 2/2006 Replaced by MRFG35010NT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		PDF MRFG35010MT1 MRFG35010NT1. 6 017 03 61 A113 MRFG35010MT1 MRFG35010NT1 D55342M07

    Marking Z7 Gate Driver

    Abstract: MRFG35005MT1 A113 MRFG35005NT1
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35005MT1 Rev. 3, 1/2006 Replaced by MRFG35005NT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		PDF MRFG35005MT1 MRFG35005NT1. Marking Z7 Gate Driver MRFG35005MT1 A113 MRFG35005NT1

    GX03005522

    Abstract: 200S CDR33BX104AKWS MRF282SR1 MRF282ZR1 GX0300-55-22 MRF282
    Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by MRF282/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282SR1 MRF282ZR1 RF Power Field Effect Transistors Freescale Semiconductor, Inc. N–Channel Enhancement–Mode Lateral MOSFETs


    Original     		PDF MRF282/D MRF282SR1 MRF282ZR1 MRF282SR1 GX03005522 200S CDR33BX104AKWS MRF282ZR1 GX0300-55-22 MRF282

    A113

    Abstract: MRFG35005MT1 MRFG35005NT1
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35005MT1 Rev. 2, 5/2005 Gallium Arsenide PHEMT MRFG35005NT1 MRFG35005MT1 RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35005MT1 MRFG35005NT1 MRFG35005NT1 A113 MRFG35005MT1

    ATC 1184

    Abstract: A113 MRFG35005MT1 C 4804 transistor "class AB Linear" z9 ma 814
    Text: MOTOROLA Order this document MRFG35005MT1/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line Gallium Arsenide PHEMT MRFG35005MT1 RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35005MT1/D MRFG35005MT1 ATC 1184 A113 MRFG35005MT1 C 4804 transistor "class AB Linear" z9 ma 814

    Untitled

    Abstract: No abstract text available
    Text: FEATURES PACKAGE High Power Gain Excellent Ruggedness 50V Supply Voltage Operation from 24v- 50v high Power Gain Extremely Rugged Internal Input and Output Matching Pb-free and RoHS Compliant TYPICAL PERFORMANCE DESCRIPTION ORDERING INFORMATION REV. B THERMAL/RUGGEDNESS PERFORMANCE


    Original     		PDF

    ferroxcube ferrite beads

    Abstract: C18 ph MJD320 ferroxcube for ferrite beads Semiconductor 1346 transistor MALLORY VARIABLE CAPACITORS MRF282 100b*500x MRF282ZR1 RESISTOR AXIAL 0414
    Text: Freescale Semiconductor Technical Data Document Number: MRF282 Rev. 15, 5/2006 RF Power Field Effect Transistors MRF282SR1 MRF282ZR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and


    Original     		PDF MRF282 MRF282SR1 MRF282ZR1 MRF282SR1 ferroxcube ferrite beads C18 ph MJD320 ferroxcube for ferrite beads Semiconductor 1346 transistor MALLORY VARIABLE CAPACITORS MRF282 100b*500x MRF282ZR1 RESISTOR AXIAL 0414

    transistor MARKING NC KRC

    Abstract: MARKING CODE c26 AGR09130E AGR09130EF AGR09130EU JESD22-C101A amplifier copy machine 100B1R5BW MOSFET marking Z4 marking code ACP
    Text: t Copy Only AGR09130E 130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09130E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple


    Original     		PDF AGR09130E Hz--960 AGR09130E AGR09130EU AGR09130EF transistor MARKING NC KRC MARKING CODE c26 AGR09130EF AGR09130EU JESD22-C101A amplifier copy machine 100B1R5BW MOSFET marking Z4 marking code ACP

    transistor B42

    Abstract: No abstract text available
    Text: ^ -3 3 - 0 1 Philips Sem iconductors NPN silicon planar epitaxial „ m ic rowave power transistor PHILIPS INTERNATIONAL FEATURES Suitable for short and medium pulse applications up to 1 ms/10% Internal Input prematching networks allow an easier design of circuits


    OCR Scan     		PDF RZB06050W 711DfiEti 711Dfl2b transistor B42