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    100HH Search Results

    100HH Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    G45AA19221100HHR Amphenol Communications Solutions HDMI 2.1, RECEPTACLE, A type with flange screw hole CH 7.08mm, R/A SMT, 30u\\. plating, Tray packing Visit Amphenol Communications Solutions
    SF Impression Pixel

    100HH Price and Stock

    Syfer Technology 0402J250P100HHT

    MULTI-LAYERED CERAMIC CAPACITOR
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    DigiKey 0402J250P100HHT Digi-Reel 19,749 1
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    0402J250P100HHT Cut Tape 19,749 1
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    0402J250P100HHT Reel 10,000 10,000
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    Micro Commercial Components MBR5U100HHE3-TP

    DIODE SCHOTTKY 100V 5A TO277
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    DigiKey MBR5U100HHE3-TP Digi-Reel 7,003 1
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    MBR5U100HHE3-TP Cut Tape 7,003 1
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    MBR5U100HHE3-TP Reel 4,000 4,000
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    Mouser Electronics MBR5U100HHE3-TP
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    Micro Commercial Components MBR10U100HHE3-TP

    DIODE SCHOTTKY 100V 10A TO277
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    DigiKey MBR10U100HHE3-TP Digi-Reel 2,216 1
    • 1 $1.93
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    MBR10U100HHE3-TP Cut Tape 2,216 1
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    MBR10U100HHE3-TP Reel 4,000
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    Mouser Electronics MBR10U100HHE3-TP 29
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    New Advantage Corporation MBR10U100HHE3-TP 8,000 1
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    Tripp Lite K4081100HHXX000

    9155 8KVA 208/120V W/PDM
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    DigiKey K4081100HHXX000 Bulk 1
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    Siemens 3RA21100HH151AP0

    STARTER DOL FB S00 0.55-0.8A 230
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    DigiKey 3RA21100HH151AP0 Box 1
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    Mouser Electronics 3RA21100HH151AP0
    • 1 $418.58
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    RS 3RA21100HH151AP0 Bulk 1
    • 1 $502.86
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    • 100 $452.58
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    100HH Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    ACM4532

    Abstract: ECJ-3YB1C105K LM48410 LM48410SQ TPSB106K016R0800 TDK common mode choke notes 24v Audio amplifier class AB
    Text: LM48410 Low EMI, Filterless, 2.3W Stereo Class D Audio Power Amplifier with National 3D Enhancement General Description Key Specifications The LM48410 is a single supply, high efficiency, 2.3W/channel, filterless switching audio amplifier. A low noise PWM


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    LM48410 LM48410 ACM4532 ECJ-3YB1C105K LM48410SQ TPSB106K016R0800 TDK common mode choke notes 24v Audio amplifier class AB PDF

    Untitled

    Abstract: No abstract text available
    Text: EM73866 4-BIT MICRO-CONTROLLER FOR LCD PRODUCT GENERAL DESCRIPTION EM73866 is an advanced single chip CMOS 4-bit micro-controller. It contains 8K-byte ROM, 500-nibble RAM, 4-bit ALU, 13-level subroutine nesting, 22-stage time base, two 12-bit timer/counters for the kernel function.


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    EM73866 EM73866 500-nibble 13-level 22-stage 12-bit PDF

    LM48410

    Abstract: No abstract text available
    Text: LM48410 www.ti.com LM48410 SNAS403E – FEBRUARY 2007 – REVISED MAY 2013 Low EMI, Filterless, 2.3W Stereo Class D Audio Power Amplifier with 3D Enhancement Check for Samples: LM48410 FEATURES DESCRIPTION • The LM48410 is a single supply, high efficiency,


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    LM48410 SNAS403E LM48410 PDF

    Untitled

    Abstract: No abstract text available
    Text: LM48410 www.ti.com LM48410 SNAS403D – FEBRUARY 2007 – REVISED JULY 2008 Low EMI, Filterless, 2.3W Stereo Class D Audio Power Amplifier with 3D Enhancement Check for Samples: LM48410 FEATURES DESCRIPTION • The LM48410 is a single supply, high efficiency,


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    LM48410 SNAS403D LM48410 PDF

    zf 9050

    Abstract: micro controller EM73P461A 8749 MICROCONTROLLER HTC lCD DISPLAY Em73p461
    Text: EM73P461A 4-BIT MICRO-CONTROLLER FOR LCD PRODUCT inary Prelim GENERAL DESCRIPTION EM73P461A is an advanced single chip CMOS 4-bit one-time programming OTP micro-controller. It contains 4K/8K-byte ROM, 244-nibble RAM, 4-bit ALU, 13-level subroutine nesting, 22-stage time base, two 12-bit timer/


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    EM73P461A EM73P461A 244-nibble 13-level 22-stage 12-bit zf 9050 micro controller 8749 MICROCONTROLLER HTC lCD DISPLAY Em73p461 PDF

    Siemens 3.15A NH Fuse

    Abstract: siemens fuse 100A Neozed SIEMENS FUSES 160A Fuse FUSE SIEMENS neozed fuse 200A 12KV Siemens 80A NH Fuse siemens diazed gg DIN43625
    Text: NEXT FIND IT TABLE OF CONTENTS MINIATURE DIAZED Mini fuses in five sizes to 20 Amps. • Slow Blow • Medium Blow Click for PDF file • Fast Blow • Super Fast Blow NEOZED CYLINDER NH "Bottle" fuses in five sizes to 200 Compact fuses in three sizes to Standard cylinder fuses are


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    80HH24-537 100HH24-537 125HH24-537 160HH24-537 200HH24-537 6HH36-537 10HH36-537 16HH36-537 20HH36-537 25HH36-537 Siemens 3.15A NH Fuse siemens fuse 100A Neozed SIEMENS FUSES 160A Fuse FUSE SIEMENS neozed fuse 200A 12KV Siemens 80A NH Fuse siemens diazed gg DIN43625 PDF

    MOSFET R3D

    Abstract: ACM4532 ECJ-3YB1C105K LM48410 LM48410SQ TPSB106K016R0800
    Text: LM48410 Low EMI, Filterless, 2.3W Stereo Class D Audio Power Amplifier with National 3D Enhancement General Description Key Specifications The LM48410 is a single supply, high efficiency, 2.3W/channel, filterless switching audio amplifier. A low noise PWM


    Original
    LM48410 LM48410 MOSFET R3D ACM4532 ECJ-3YB1C105K LM48410SQ TPSB106K016R0800 PDF

    EM73866

    Abstract: htc display 40 pin HTC lCD DISPLAY
    Text: EM73866 4-BIT MICRO-CONTROLLER FOR LCD PRODUCT GENERAL DESCRIPTION EM73866 is an advanced single chip CMOS 4-bit micro-controller. It contains 8K-byte ROM, 500-nibble RAM, 4-bit ALU, 13-level subroutine nesting, 22-stage time base, two 12-bit timer/counters for the kernel function.


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    EM73866 EM73866 500-nibble 13-level 22-stage 12-bit htc display 40 pin HTC lCD DISPLAY PDF

    l 101c 681

    Abstract: pj 986 iv PJ 986 pj 979 code
    Text: m e ki con. ALUMINUM ELECTROLYTIC CAPACITORS PF Low Im pedance, High R eliability Approved by Reliability Center for Electronic Component, Japan-Certification No. RCJ-03-23C series • Low impedance and high reliability withstanding 5000 hour load life at + 1 0 5 t: 3000/2000 hours


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    RCJ-03-23C 18X20 18X25 18X31 18X35 /100kHz 1051/120Hz l 101c 681 pj 986 iv PJ 986 pj 979 code PDF

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS Preliminary data IGBT High Speed IXSH50N60B IXSH50N60BS V CES ^C25 V CE sat Short Circuit SOA Capability = 600 V = 75 A = 2.5 V ?c G TO-247 SMD (\Y m A Maximum Ratings Sym bol Test C onditions VCES T d = 25°C to 150°C 600 V V CGR T d = 25°C to 150°C; RGE = 1 M£i


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    IXSH50N60B IXSH50N60BS O-247 PDF

    FD9515

    Abstract: k 3525 MOSFET 1RFU020 fu022 irfu020 FU020 IRFR022 lg 87a
    Text: H E INTERNATIONAL I 4055452 QQOÛEba I 1 Data Sheet No. FD-9.515A T-35-25 RECTIFIER IOR INTERNATIONAL RECTIFIER AVALANCHE AND dv/dt RATED IRFROSO IRFROSS IRFUOSO IRFUOSS HEXFET TRANSISTORS N-CHANNEL Product Summary 50 Volt, 0.10 Ohm HEXFET T he H E X F E T technology is the key to International


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    T-35-25 IRFR020, IRFR022, IRFU020, IRFU022 FD9515 k 3525 MOSFET 1RFU020 fu022 irfu020 FU020 IRFR022 lg 87a PDF

    TLCS-900

    Abstract: TMP96C041B TMP96C041BF TMP96C141BF
    Text: TOSHIBA JÜ S t U C M O S 16 t: 7 h 7 < i Q 3 > h P - 7 T L C S - 9 0 0 v ' J - x TMP96C041B tt £ < 7 j£ ß # * ± 1 6 t i y h V < ? □ = ! > id h □ — "7 TLCS-900 v U — X N TM P96C 041B# U if £ Ò ^ s * l s i £ ¿ r 'f ijf f l z 4 '^ > t íT (is


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    TLCS-900 TMP96C041B TLCS-900v TMP96C041B: P96C041B TMP96C041 TMP96C041BF 16fcf TMP96C041BFià TMP96C141BF^ TLCS-900 TMP96C041B TMP96C041BF TMP96C141BF PDF

    TMP95C061B

    Abstract: TMP95C061BF uips 16y p54
    Text: TOSHIBA JÜ S t U C M O S 16 t: 7 h 7 < i Q 3 > h P - 7 T LC S- 9 0 0 /H v ' J - x TMP95C061B t t i; » £ < 7 j£ ß # * ± 1 6 ti y * l s £ i h v < ^ p = l> £ id hP-^TLC S-900/H vU -Xs { & m ± D :, ì m , r TM P95C 061B# j ¿ usto f c — 6 (D )S f ê L f f lf à } â , Ü # II


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    TLCS-900/H TMP95C061B TLCS-900/HvU-Xs TMP95C061B P95C061B TMP95C061BF TMP95C061BFà P-QFP100-1414-0 TMP95C061BEFià TMP95C061B uips 16y p54 PDF

    XF-TRC1102NLE

    Abstract: ecs motherboard AKUE 130uH 30MHZ 80MHZ XF-TRC1102NL
    Text: M e c h a n ica I; - \2 JO-m. t Iññññ ñññ 1 XMULTIPLE *ir « I 1 j XF-TRC1102NLE • 1 jyyyyyyy — -lU—0.4Í i 3EV. BCT Jfl A BHJ. D 6 S C *[rT ]O f AFPD W IZ ^ O U -B. 89- £ DATE 1— 3.2? £ * L '—û.fri SUGGESTED PTB LATfDUTiTW V ffif


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    XF-TRC1102NLE 130uH D65CR 30MHZ -20dB 80MHZ ecs motherboard AKUE 80MHZ XF-TRC1102NL PDF

    diode lt 429

    Abstract: 7V03 lts 542
    Text: nixYS IXSN 80N60AU1 IGBT with Diode VC ES IC25 vY CE sat Combi Pack = 600 V = 160 A = 3V Short Circuit SOA Capability Preliminary data Maximum Ratings Symbol T est Conditions v CES ^ = 25°C to 150°C 600 V v CGR T j = 25°C to 150°C; RGE = 1 M ii 600 A


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    80N60AU1 OT-227 E153432 diode lt 429 7V03 lts 542 PDF

    D-6840

    Abstract: D6840 TXYS 91S50B IC-9017 c10006 d684
    Text: □IXYS PRELIMINARY TECHNICAL INFORMATION Data Sheet No 91S50B July 1992 HIGH VOLTAGE "S" Series MOSIGBT IX S H 1 7 N 1 0 0 ,1 0 0 A Improved S C SO A Capability IX S M 1 7 N 1 0 0 ,1 0 0 A Part Number •


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    91S50B 20kHz IXSH17N100, IXSM17N100 125-R D-6840 D6840 TXYS IC-9017 c10006 d684 PDF

    Untitled

    Abstract: No abstract text available
    Text: r n THS BHMMN6 6 UNPUBUSHEK- 1— W LEAStt PM PUBLICATION— COPYWOHT - BY TYCO OECTROMCS CORPORATION. osr REVISIONS AA 22 * “ • W CHIS RE8BW B>- -OBCftlP TION 06JAN2009 REV PER E C O -0 9 —001491


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    06JAN2009 C26800 100jj 100jalNCH AND/OR260' 31MAR2000 PDF

    Untitled

    Abstract: No abstract text available
    Text: D IX Y S IXSX 50N60AU1 IGBT with Diode VCES = 600 V •ca PLUS 247 package = 75A W 2JV Short Circuit S O A Capability Preliminary data Symbol Test Conditions Maximum Ratings VCES T j =25°Cto 150°C 600 V vCQR Tj = 25°Cto 150°C; RG6 = 1 Mi2 600 V VGES


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    247TM 50N60AU1 O-247 PLUS247TM 50N60AU1) 80A/ns PDF

    BC445

    Abstract: BC446 TRANSISTOR C 460
    Text: SILICON EPITAXIAL TRANSISTOR «TÖ3»- DESCRIPTION BC445 NPN and BC446 (PNP) are silicon planar transistor designed for use as high voltage driver and output transistor. Particularly suitable as power darlington drivers._


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    BC445 BC446 BC445 BC446 300mA 625mW 12mW/Â 100mA 100MHz- TRANSISTOR C 460 PDF

    45N120 ixys

    Abstract: ON601
    Text: mxYS IXSH 45N120 High Voltage, VCES I L O W V CE sa. I G B T C25 v CE(sat) 1200 V 75 A 3V Short Circuit SOA Capability Symbol Test Conditions v CES v CGR Tj =25°Cto 150°C 1200 Tj = 25° C to 150° C; RGE= 1 M£2 1200 Maximum Ratings V V v GES v GEM Continuous


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    45N120 O-247 45N120 ixys ON601 PDF

    4588d

    Abstract: C8750 2814H
    Text: □IXYS IGBT with Diode IXSN 52N60AU1 Short Circuit S O A Capability E é Test Conditions VCES Tj =25°C to150°C 600 V vCGR vGES T.J = 25° C to 150° C;’ RrP = 1 MQ BE 600 A Continuous ±20 V VGEM Transient ±30 V 'c 2 5 Tc =25°C 80 A Tc =90°C 40 A 160


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    52N60AU1 to150 OT-227B, 52N60AU1 4588d C8750 2814H PDF

    IXGH40N30

    Abstract: high current igbt
    Text: DIXYS HiPerFAST IGBT IXGH40N30BD1 V CES ^C25 V CE sat trfl >c — 300 60 2.4 75 V A V ns G (if »E Symbol Test Conditions V CES T j = 2 5 °C to 1 5 0 °C v* CGR T, = 2 5 ° C to 1 5 0 "C; R V GES Maximum Ratings 300 V 300 V Continuous i2 0 V V GEM Transient


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    IXGH40N30BD1 O-247 IXGH40N30 high current igbt PDF

    32N60BU1

    Abstract: 32N60B
    Text: □ IXYS HiPerFAST IGBT IXGH39N60B IXGH39N60BS VCES lC26 = 600 V = 76 A VCE sa„ = 1-7V t, = 200 ns P re lim in a ry d a ta Symbol TestConditions V CES Tj = 25°C to 150°C 600 V V CGR ^ 600 V V GES C ontinuous ±20 V V GEM Transient ±30 V Tc = 25°C


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    IXGH39N60B IXGH39N60BS Cto150Â O-247 32N60BU1 32N60B PDF

    Untitled

    Abstract: No abstract text available
    Text: b7 pTI^dttesd QOOTBSB T TOSHIBA {DISCRETE/OPTOï 9097250 TOSHIBA D I S C R E T E /OPTO 67C 0 9 3 5 3 D r - o 7 ~t'jr 1SV99 Silicon EpitaxiaJ ;Pin Type Diode Weight : 0.2g ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC Forward Voltage SYMBOL TEST CONDITION


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    1SV99 100HHz 00IIH354 PDF