52N60AU1
Abstract: IXSN52N60AU1 15-05J 52N60
Text: IGBT with Diode IXSN 52N60AU1 VCES IC25 VCE sat Combi Pack Short Circuit SOA Capability = 600 V = 80 A = 3V 3 2 4 Symbol Test Conditions VCES TJ = 25°C to 150°C 1 Maximum Ratings 600 miniBLOC, SOT-227 B 1 V 2 VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 A
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52N60AU1
OT-227
IXSN52N60AU1
IXSN52N60AU1
15-05J
52N60
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52N60AU1
Abstract: No abstract text available
Text: IGBT with Diode IXSN 52N60AU1 Combi Pack Short Circuit SOA Capability VCES IC25 VCE sat = 600 V = 80 A = 3V 3 2 Preliminary data 4 1 Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 A VGES
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52N60AU1
52N60AU1
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Untitled
Abstract: No abstract text available
Text: IGBT with Diode IXSN 52N60AU1 VCES IC25 VCE sat Combi Pack Short Circuit SOA Capability = 600 V = 80 A = 3V 3 2 4 Symbol Test Conditions VCES TJ = 25°C to 150°C 1 Maximum Ratings 600 miniBLOC, SOT-227 B 1 V 2 VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 A
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52N60AU1
OT-227
IXSN52N60AU1
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IXSN52N60AU1
Abstract: No abstract text available
Text: IGBT with Diode IXSN 52N60AU1 VCES IC25 VCE sat Combi Pack Short Circuit SOA Capability = 600 V = 80 A = 3V 3 2 4 Symbol Test Conditions VCES TJ = 25°C to 150°C 1 Maximum Ratings 600 miniBLOC, SOT-227 B 1 V 2 VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 A
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52N60AU1
OT-227
IXSN52N60AU1
IXSN52N60AU1
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7n60b
Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3
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AXC-051
AXC-053
AXC-101
AXC-102
AXL-001
AXL-051
AXV-102
142-12io8
142-16io8
19-08ho1
7n60b
35N120u1
ixys dsei 45-12a
DSDI 35-12A
20N80
80n06
80n60
VVY 40-16IO1
IXYS CS 2-12
IXFX 44N80
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b1113
Abstract: diode b18 35N120AU1 40N60CD1 diode b129 50N60BD1 30N60BD1 40N60BD1 IXSH 35N120AU1 diode b14
Text: SCSOA IGBT S-Series Contents IGBT with Fast Diode VCES max IC Low VCE sat TC = 25 °C VCE(sat) max PLUS247 ISOPLUS (IXSX) 247TM (IXSR) TC = 25 °C TO-247 (IXSH) TO-264 (IXSK) TO-268 (IXST) miniBLOC (IXSN) Page V A V 600 32 1.8 ➤IXSH 16N60U1 B1-4 48 2.2
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PLUS247
247TM
O-247
O-264
O-268
16N60U1
24N60U1
30N60U1
62N60U1
24N60AU1
b1113
diode b18
35N120AU1
40N60CD1
diode b129
50N60BD1
30N60BD1
40N60BD1
IXSH 35N120AU1
diode b14
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40n60 igbt
Abstract: 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60
Text: SCSOA IGBT S-Series / D-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode Short Circuit Current Rated SCSOA IGBT S-Series Contents IGBT VCES max V High Speed Low VCE(sat) 600 IC VCE(sat) max TC = 25 °C TC = 25 °C A V TO-220 (IXSP) TO-263
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O-220
O-263
O-247
16N60
B1-10
24N60
30N60
40N60
40n60 igbt
35N120u1
B1116
equivalent for 30n60
40n60 equivalent
30n60 equivalent
30n60 to-220
ixsn 35N120U1
igbt equivalent to 40n60
80n60
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52N60A
Abstract: 52N60 1XSN52N60AU1
Text: IGBT with Diode IXSN 52N60AU1 VCES I = 600 V = 80 A = 3V C25 v CE sat Short Circuit SOA Capability Symbol V CES Test Conditions T, = Maximum Ratings 25°C to 150CC V 600 Tj = 25°C to 150°C; Rge = 1 Mfi 600 A v" g e s Continuous ±20 V vy g e m T ransient
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OCR Scan
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52N60AU1
OT-227B,
52MB0AU1
52N60A
52N60
1XSN52N60AU1
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4588d
Abstract: C8750 2814H
Text: □IXYS IGBT with Diode IXSN 52N60AU1 Short Circuit S O A Capability E é Test Conditions VCES Tj =25°C to150°C 600 V vCGR vGES T.J = 25° C to 150° C;’ RrP = 1 MQ BE 600 A Continuous ±20 V VGEM Transient ±30 V 'c 2 5 Tc =25°C 80 A Tc =90°C 40 A 160
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OCR Scan
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52N60AU1
to150
OT-227B,
52N60AU1
4588d
C8750
2814H
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Untitled
Abstract: No abstract text available
Text: QIXYS IGBT with Diode IXSN 52N60AU1 VCES I C25 vCE sat Combi Pack = 600 V = 80 A = 3V Short Circuit SOA Capability Maximum Ratings Symbol Test Conditions V CES Tj = 25°C to 150°C 600 V v CGR T, = 25°C to 150°C; RGE = 1 Mi2 600 A V GES Continuous +20 V
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OCR Scan
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52N60AU1
OT-227
4bflb22b
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B1116
Abstract: b1104 16N60 N60A B1118 10N120 B1102 B1126 24n60 35N120U1
Text: PIXYS SCSOAIGBTS-Series Contents IGBT •J v CES •> max < Tc = 25 °C V TO-220 IXSP TO-263 (IXSA) TO-247(IXSH) TO-2680XST) miniBLOC (IXSN) Page j? > > IXSA 16N60 IXSP 16N60 1.8 1.8 48 50 75 * 2.2 2.5 2.5 IXSH 24N60 IXSH 30N60 IXSH 40N60 B1-12 B1-20 B1-40
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OCR Scan
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O-220
O-263
O-247
O-2680XST)
16N60
24N60
30N60
40N60
25N100
B1116
b1104
N60A
B1118
10N120
B1102
B1126
35N120U1
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40n80
Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
Text: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18
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OCR Scan
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5-10A
52-14N01
52-16N01
55-12N
55-14N07
55-18N
60-08N
60-16N
62-08N
62-12N
40n80
13NB0
60N60
dsei 20-12
33N120
VUO 35-12 N 0 7
DS117-12A
DS117-12
26n60
4410PI
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30n60
Abstract: 40N60AU1 40N60 igbt 30N60 30N60A 50N100 30n60* 227 30N60U1 IXSN40N60AU1 50N60U1
Text: MbflbZZb 00Q1737 323 ¡IX Y insulated Gate Bipolar Transistors IGBT "S" series with im proved SC SO A capability Type 'i > New IXSH IXSH IXSH IXSH IXSH IXSH IXSH ► IXSH IXSH IXSH IXSH IXSH > IXSH > IXSH ÍXSM ÍXSM !XSM 20N60 30N60 40N60 25N100 45N100
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OCR Scan
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00Q1737
20N60
O-247
30N60
40N60
25N100
45N100
45N120
20N60A
24N60A
30n60
40N60AU1
40N60
igbt 30N60
30N60A
50N100
30n60* 227
30N60U1
IXSN40N60AU1
50N60U1
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Untitled
Abstract: No abstract text available
Text: MbñbEZb 0 0 0 1 7 3 ? 323 II X Y Insulated Gate Bipolar Transistors IGBT "S" series with im proved SC SO A capability Type i Vcts • c ■ c Tc = 9 0 C Tc = 25'C ► New max. typ. C typ. pF 1800 2800 4500 pF 45 50 90 HS US KW W 0.4 0.4 0.4 10 0.83 0.62
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20N60
30N60
40N60
25N100
45N100
45N120
40N60AU1
35N100U1
55N100U1Â
52N60AU1Â
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8n80
Abstract: DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B
Text: Alphanumerical Index c CS 142-12 io8 CS 142-16 ¡08 CS 23-08 io2 CS 23-12 ¡02 CS 23-16 io2 3S 300-12 io3 2S 300-16 io3 CS 35-08 io4 CS 35-12 io4 CS 35-14 io4 CS 72-12 ¡08 CS 72-16 ¡08 CS 8-08 io2 CS 8-12 io2 CS 8-12 io2 CS1011 -18io1 CS1011-22io1 CS1011-25io1
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OCR Scan
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CS1011
-18io1
CS1011-22io1
CS1011-25io1
CS1250-12io1
CS1250-14io1
CS1250-16io1
CS20-12
CS20-14
CS20-16
8n80
DS117-12A
36-18N
16go
20N60A
2QN60
62-16N07
DSA117-12
10N60A
MCC95-12io1B
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40N60A
Abstract: G 40N60 igbt IXSN35N120AU1 IXSH 35N120AU1 50N60AU1 25N120AU1 IXLH35N120A IXLK35N120AU1 IXLN35N120AU1 IXLN50N120A
Text: Insulated Gate Bipolar Transistors IGBT "S" and "L" series with improved SCSOA capability Type Tjm = 150 C ► New ► IXSP 2N100 IXSH 30N60 IXSH 40N60 IXSH 25N100 IXSH 45N100 IXSH 45N120 IXSP 2N100A ► IXSH 10N60A IXSH 24N60A IXSH 30N6QA IXSH 40N60A IXSH 25N100A
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OCR Scan
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2N100
30N60
40N60
25N100
45N100
45N120
2N100A
10N60A
24N60A
30N6QA
40N60A
G 40N60 igbt
IXSN35N120AU1
IXSH 35N120AU1
50N60AU1
25N120AU1
IXLH35N120A
IXLK35N120AU1
IXLN35N120AU1
IXLN50N120A
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mm036
Abstract: ml075-12 MM036-12 mm036-16 mm075-12io1 mm062 DSI 12-06A MDD95-16N1B ME03 21N100
Text: 17 17 17 17 17 17 17 17 17 17 17 17 17 17 13 15 15 13 13 13 13 14 14 14 14 13 13 13 13 13 15 15 15 13 13 13 13 13 13 14 14 14 14 14 14 13 13 13 15 15 15 14 14 14 DSAI35-12A DSAI 35-16A DSAI 35-18A DSAI 75-12A DSAI 75-16A DSAI 75-18A DSEI 12-06A DSEI 12-1OA
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OCR Scan
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DSAI35-12A
5-16A
5-18A
5-12A
2-06A
12-1OA
2-12A
2x30-Q4C
mm036
ml075-12
MM036-12
mm036-16
mm075-12io1
mm062
DSI 12-06A
MDD95-16N1B
ME03
21N100
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DSE 130 -06A
Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50
Text: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01
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OCR Scan
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AXC-051
AXC-051-R
AXC-102
AXV-002
015-14to1
2x45-16io1
2x60-08io1
2x60-12io1
2x60-14io1
2x60-16io1
DSE 130 -06A
vub 70-12
IXGH 30n120
vub 70-16
30N60B
80N10
12N60CD
DSEI 30-16 AS
DSEP 15-06A
13N50
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b14 smd diode
Abstract: B1108 DIODE SMD b14 smd diode B1100 16N60 B1106 B1112 B1108 D B1116 IXYS 30N60
Text: XYS SCSOAIGBT S-Serles / D-Sertee Contents IGBT v C ES max T0-220 V* CEIsatl IXGP max Tc = 25 °C Tc = 25 “C •c TO-263 (IXGA) TO-247 . TO-247 SMD/.S* T0-204 miniBLOC Page ♦ * V A V 600 16 16 1.8 1.8 48 50 75 2.2 2.5 2.5 IXSH 24N60 iXSH 30N60 IXSH 40N60
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OCR Scan
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T0-220
O-263
O-247
O-247
T0-204
24N60
30N60
40N60
25N100
45N100
b14 smd diode
B1108
DIODE SMD b14
smd diode B1100
16N60
B1106
B1112
B1108 D
B1116
IXYS 30N60
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