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IXYS Corporation IXGH39N60B IGBT 600V 76A 200W TO247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGH39N60B	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
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IXYS Corporation IXGH39N60BD1 IGBT 600V 76A 200W TO247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGH39N60BD1	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Bristol Electronics	IXGH39N60BD1		130			1 - 10 - 100 - 1000 - 10000 -	Get Quote

IXGH39N60B Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXGH39N60B		IXYS	600V HiPerFAST IGBT		Original	PDF
IXGH39N60B		IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 76A 200W TO247AD		Original	PDF
IXGH39N60BD1		IXYS	IGBT Discretes		Original	PDF
IXGH39N60BS		IXYS	600V HiPerFAST IGBT		Original	PDF

IXGH39N60B Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IXGH39N60B Abstract: IXGH39N60BS Text: HiPerFASTTM IGBT IXGH39N60B IXGH39N60BS VCES IC25 VCE sat tfi = = = = 600 V 76 A 1.7 V 200 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM	Original	PDF	IXGH39N60B IXGH39N60BS O-247 39N60BS IXGH39N60B IXGH39N60BS
Untitled Abstract: No abstract text available Text: HiPerFASTTM IGBT IXGH39N60B IXGH39N60BD1 IXGT39N60B IXGT39N60BD1 VCES IC25 VCE sat tfi = = = = 600 V 76 A 1.7 V 200 ns Preliminary data (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600	Original	PDF	IXGH39N60B IXGH39N60BD1 IXGT39N60B IXGT39N60BD1 O-268 O-247
Untitled Abstract: No abstract text available Text: HiPerFASTTM IGBT IXGH39N60B VCES IC25 VCE sat tfi = = = = 600 V 76 A 1.7 V 200 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30	Original	PDF	IXGH39N60B O-247 Internatio19
Untitled Abstract: No abstract text available Text: HiPerFASTTM IGBT IXGH39N60B VCES IC25 VCE sat tfi = = = = 600 V 76 A 1.7 V 200 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30	Original	PDF	IXGH39N60B O-247
IXGH39N60BD1 Abstract: 39N60B 39n60bd1 Text: HiPerFASTTM IGBT IXGH39N60B VCES IXGH39N60BD1 IC25 VCE sat tfi = = = = 600 V 76 A 1.7 V 200 ns Preliminary data (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20	Original	PDF	IXGH39N60B IXGH39N60BD1 O-247 39N60B 39n60bd1
IXGH39N60BD1 Abstract: IXGH39N60B IXGT39N60B 39n60bd1 M3MD 819 39a IXGT39N60BD1 39N60B Text: HiPerFASTTM IGBT IXGH39N60B IXGH39N60BD1 IXGT39N60B IXGT39N60BD1 VCES IC25 VCE sat tfi = = = = 600 V 76 A 1.7 V 200 ns Preliminary data (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600	Original	PDF	IXGH39N60B IXGH39N60BD1 IXGT39N60B IXGT39N60BD1 O-268 O-247 IXGH39N60BD1 IXGH39N60B IXGT39N60B 39n60bd1 M3MD 819 39a IXGT39N60BD1 39N60B
200n60 Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120 Text: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40	Original	PDF	PLUS247 20N30 28N30 30N30 40N30 31N60 38N60 41N60 60N60 O-264 200n60 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
C110 Abstract: IXGH39N60BD1 Text: HiPerFASTTM IGBT ISOPLUS247TM VCES IXGR 39N60B IXGR 39N60BD1 IC25 VCE sat (Electrically Isolated Backside) tfi(typ) = 600 V = 66 A = 1.8 V = 200 ns Preliminary data sheet (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	PDF	ISOPLUS247TM 39N60B 39N60BD1 IXGH39N60BD1 C110
Untitled Abstract: No abstract text available Text: nixY S HiPerFAST IGBT with Diode IXGH39N60BD1 V CES ^C25 V CE sat tn Symbol Test Conditions V CHS T j = 2 5 ° C to 1 5 0 c C 600 V V C GR T , = 25° C to 150° C; RGF = 1 M il 600 V V GES Continuous 120 V Transient +J30 V <c2S T c = 2 5 °C 76 A C90	OCR Scan	PDF	IXGH39N60BD1 O-247 125CC,
J599 Abstract: e5200 Text: DIXYS HiPerFAST IGBT IXGH39N60B V CE sat = 600 V = 76 A = 1.7 V tn = 200 ns CES ^C25 Preliminary data Maximum Ratings Symbol Test Conditions V CES Tj =2 5°C to 150°C 600 V T,J = 25° C to 150° C; Riafc „ =1 600 V V GES Continuous ±20 V VGEM Transient	OCR Scan	PDF	IXGH39N60B TQ-247 100nH J599 e5200
32N60BU1 Abstract: 32N60B Text: □ IXYS HiPerFAST IGBT IXGH39N60B IXGH39N60BS VCES lC26 = 600 V = 76 A VCE sa„ = 1-7V t, = 200 ns P re lim in a ry d a ta Symbol TestConditions V CES Tj = 25°C to 150°C 600 V V CGR ^ 600 V V GES C ontinuous ±20 V V GEM Transient ±30 V Tc = 25°C	OCR Scan	PDF	IXGH39N60B IXGH39N60BS Cto150Â O-247 32N60BU1 32N60B
32N60BU1 Abstract: 32N60B h32n60b e5200 32N60BU Text: HiPerFAST IGBT IXGH39N60B IXGH39N60BS VCES ^C25 v CE sat tr , = = = = 600 V 76 A 1.7V 200 ns Preliminary data Symbol Test Conditions ^C E S Tj 600 V v CGR Tj = 25°C to 150°C; RGE = 1 M ft 600 V VGES Continuous ±20 V VGEM Transient ±30 V *C25 Tc = 25°C	OCR Scan	PDF	IXGH39N60B IXGH39N60BS O-247 39N60BS) 32N60BU1 32N60B h32n60b e5200 32N60BU
T0247AC Abstract: IRG4PC50FD T0-220AB bup314 T0-247AC bup314d IRG4BC40U T0220AB IRG4PC50UD BUP212 Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 electronics CunoBbie TpaH3MCTopbi IGBT copTMpoBKa no HanpflweHMro UCE TpaH3Mcrop IGBT (Insulated Gate Bipolar Transistor) npeflCTaBrmeT c o 6 om 6 M n o r m p H b iM T p a H 3 M C T o p c M3 o n M p o B a H H H M 3 a T B o p o M , y n p a B r m e M b iM H a n p a ^ e H M e M . O h x a p a K T e p M 3y e T c a b h c o k m m	OCR Scan	PDF	B03M0WH0CTb npe06pa30Baiennx paUP212 T0220AB BUP213 BUP313 T0218AB BUP313D T0247AC IRG4PC50FD T0-220AB bup314 T0-247AC bup314d IRG4BC40U T0220AB IRG4PC50UD BUP212
IGBT 200A 1200V Abstract: T0247 T0220AB BUP313D IGBT IRG4BC20KD igbt 20A 1200v IGBT 1200V 60A T0247A BUP314D MG50Q2YS40 Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi h MOflynM IGBT b an^aBMTHOM nop^AKe BUP203 (T0220) KpaTKoe onMcaHMe MG50Q2YS40 BUP212 BUP213 BUP313 BUP313D BUP314 BUP314D GT20D101-T0s GT20D201-T0s HGTG12N60A4D HGTG30N60B3D	OCR Scan	PDF	bup203 t0220) BUP212 BUP213 BUP313 BUP313D BUP314 BUP314D GT20D101-T0s GT20D201-T0s IGBT 200A 1200V T0247 T0220AB BUP313D IGBT IRG4BC20KD igbt 20A 1200v IGBT 1200V 60A T0247A BUP314D MG50Q2YS40

IXGN40N60 Abstract: IXGH24N60CD1 IXGR39N60BD1 ixgr32n60cd1 Text: Discrete IGBT with FAST Diodes WifaH High Speed Series VcES V C<25 A VCE SAT) max V t typ ns TO-220 (P) JP TO-263 (A) PLUS247 (X) TO-247 (H) ► Ne w TO-268 AA T0 -2 04 (T) (M) ♦ ra ^ ISOPLUS220 ISOPLUS247™(R) SOT-2^ TO-264 (K) PLUS264™ (B) LOW SATU RATION VOLTAGE TYPES	OCR Scan	PDF	ISOPLUS247TM O-220 PLUS247TM O-263 O-268 O-247 ISOPLUS220 O-264 PLUS264TM IXGA12N100U1* IXGN40N60 IXGH24N60CD1 IXGR39N60BD1 ixgr32n60cd1
Untitled Abstract: No abstract text available Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 C u n o B b ie T p a H 3 M C T o p b i IG B T IX Y S C #epa npMMeHeHMa: b n po M biw ne rn-ib ix ycTaHOBKax M a n o fi m cpeflHeM m o w ,h o c tm , b npMBOAHbix CMCTeMax, b yd p o M C T B a x ynpaB ^eH M a, b 6 ecn p0B 0A H bix 6 no K ax riMTaHMA Arm	OCR Scan	PDF	3S88SSS588S8888gÂ
Ixgr50n60 Abstract: IXGN60N60 IXGX120N60B ISOPLUS247TM IXGR40N60 IXGH60N60 ixgh32n170 ixgh35n120 IXGA20N60B IXGP12N60C Text: Discrete ÌGBT Ultra Hi9h Speed 9" Suffix c High Speed Series vT ces C<2S V A VCE SAT) max V »n typ ns T 0 -2 2 0 PLUS247 (X) " TO-263 (A) I3-Pac (J) TO-247 (H) J ♦ ► Ne yv TO-268AA TO-204 (T) (M) ISOPLUS22Û lSOPLUS247™{R) SOT-227B (N) TO-264 (K)	OCR Scan	PDF	O-263 PLUS247TM O-247 IXGH28N60B IXGH31N60 O-268AA O-204 lSOPLUS247TM OT-227B IXGA20N120 Ixgr50n60 IXGN60N60 IXGX120N60B ISOPLUS247TM IXGR40N60 IXGH60N60 ixgh32n170 ixgh35n120 IXGA20N60B IXGP12N60C