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    39N60B Price and Stock

    IXYS Corporation IXGR39N60B

    IGBT 600V 66A 140W ISOPLUS247
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    IXYS Corporation IXGH39N60B

    IGBT 600V 76A 200W TO247AD
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    IXYS Corporation IXGR39N60BD1

    IGBT 600V 66A 140W ISOPLUS247
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    IXYS Corporation IXGT39N60BD1

    IGBT 600V 76A TO268AA
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    New Advantage Corporation IXGT39N60BD1 175 1
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    IXYS Corporation IXGH39N60BD1

    IGBT 600V 76A 200W TO247AD
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    39N60B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT with Diode IXGH 39N60BD1 VCES IC25 VCE sat tfi(typ) Maximum Ratings TO-247 AD = = = = 600 V 76 A 1.8 V 200 ns Preliminary data Symbol Test Conditions VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous


    Original     		PDF 39N60BD1 O-247

    39n60bd1

    Abstract: robot control
    Text: IXGH 39N60BD1 HiPerFASTTM IGBT with Diode VCES IC25 VCE sat tfi(typ) = 600 V = 76 A = 1.8 V = 200 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous


    Original     		PDF 39N60BD1 O-247 39n60bd1 robot control

    39n60bd1

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT ISOPLUS247TM VCES IXGR 39N60B IXGR 39N60BD1 IC25 VCE sat (Electrically Isolated Backside) tfi(typ) = 600 V = 66 A = 1.8 V = 200 ns Preliminary data sheet (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF ISOPLUS247TM 39N60B 39N60BD1 IC110 IXGR39N60BD1 728B1 123B1 728B1 065B1

    39N60B

    Abstract: 39N60BD1 IXGR39N60BD1
    Text: HiPerFASTTM IGBT ISOPLUS247TM VCES IXGR 39N60B IXGR 39N60BD1 IC25 VCE sat (Electrically Isolated Backside) tfi(typ) = 600 V = 66 A = 1.8 V = 200 ns Preliminary data sheet (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF ISOPLUS247TM 39N60B 39N60BD1 IC110 IXGR39N60BD1 728B1 123B1 728B1 065B1 39N60B

    Untitled

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT ISOPLUS247TM VCES IXGR 39N60B IXGR 39N60BD1 IC25 VCE sat (Electrically Isolated Backside) tfi(typ) = 600 V = 66 A = 2.0 V = 200 ns Preliminary data sheet (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF ISOPLUS247TM 39N60B 39N60BD1 IC110 E153432 39N60BD1 IXGR39N60BD1 728B1 123B1

    39n60bd1

    Abstract: 39N60B
    Text: HiPerFASTTM IGBT ISOPLUS247TM VCES IXGR 39N60B IXGR 39N60BD1 IC25 VCE sat (Electrically Isolated Backside) tfi(typ) = 600 V = 66 A = 1.8 V = 200 ns Preliminary data sheet (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF ISOPLUS247TM 39N60B 39N60BD1 IC110 E153432 39N60BD1 IXGR39N60BD1 728B1

    C110

    Abstract: IXGH39N60BD1
    Text: HiPerFASTTM IGBT ISOPLUS247TM VCES IXGR 39N60B IXGR 39N60BD1 IC25 VCE sat (Electrically Isolated Backside) tfi(typ) = 600 V = 66 A = 1.8 V = 200 ns Preliminary data sheet (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW


    Original     		PDF ISOPLUS247TM 39N60B 39N60BD1 IXGH39N60BD1 C110

    TO-247 AD

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT with Diode IXGH 39N60BD1 VCES IC25 VCE sat tfi(typ) Maximum Ratings TO-247 AD = = = = 600 V 76 A 1.8 V 200 ns Preliminary data Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous


    Original     		PDF 39N60BD1 O-247 TO-247 AD

    ad6v

    Abstract: No abstract text available
    Text: IXGH 39N60BD1 HiPerFASTTM IGBT with Diode VCES IC25 VCE sat tfi(typ) = 600 V = 76 A = 1.8 V = 200 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous


    Original     		PDF 39N60BD1 O-247 ad6v

    IXGH39N60B

    Abstract: IXGH39N60BS
    Text: HiPerFASTTM IGBT 39N60B 39N60BS VCES IC25 VCE sat tfi = = = = 600 V 76 A 1.7 V 200 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM


    Original     		PDF IXGH39N60B IXGH39N60BS O-247 39N60BS IXGH39N60B IXGH39N60BS

    Untitled

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT 39N60B 39N60BD1 39N60B 39N60BD1 VCES IC25 VCE sat tfi = = = = 600 V 76 A 1.7 V 200 ns Preliminary data (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600


    Original     		PDF IXGH39N60B IXGH39N60BD1 IXGT39N60B IXGT39N60BD1 O-268 O-247

    IXGH39N60BD1

    Abstract: 39N60B 39n60bd1
    Text: HiPerFASTTM IGBT 39N60B VCES 39N60BD1 IC25 VCE sat tfi = = = = 600 V 76 A 1.7 V 200 ns Preliminary data (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20


    Original     		PDF IXGH39N60B IXGH39N60BD1 O-247 39N60B 39n60bd1

    200n60

    Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
    Text: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40


    Original     		PDF PLUS247 20N30 28N30 30N30 40N30 31N60 38N60 41N60 60N60 O-264 200n60 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120

    7n60b

    Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
    Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3


    Original     		PDF AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80

    IXGH39N60BD1

    Abstract: IXGH39N60B IXGT39N60B 39n60bd1 M3MD 819 39a IXGT39N60BD1 39N60B
    Text: HiPerFASTTM IGBT 39N60B 39N60BD1 39N60B 39N60BD1 VCES IC25 VCE sat tfi = = = = 600 V 76 A 1.7 V 200 ns Preliminary data (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600


    Original     		PDF IXGH39N60B IXGH39N60BD1 IXGT39N60B IXGT39N60BD1 O-268 O-247 IXGH39N60BD1 IXGH39N60B IXGT39N60B 39n60bd1 M3MD 819 39a IXGT39N60BD1 39N60B

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS HHifl JL æ* X HiPerFAST IGBT with Diode IXGH 39N60BD1 V CES = ^C25 ” V CE sat = tfi(typ ) 600 76 1.8 200 V A V ns P relim inary data sh ee t Maximum Ratings Symbol TestConditions V CES T j = 25°C to 150°C 600 V V CGR T j = 25°C to 150°C; RGE = 1 M£i


    OCR Scan     		PDF 39N60BD1

    7N60B

    Abstract: 65A3 40N60A 60N60 IXGA 12N60C 200n60 ixgh 1500 30N30 IXG IGBT ixgh
    Text: Insulated Gate Bipolar Transistors IGBT G series (high gain, high speed) v CE{Mt) Type T „ = 25°C A = 150°C New t jm > > IXGH 28N30 > 56 60 60_ IXGH 30N30 > IXGH 4QN30 > IXGH 31N60 IXGH IXGH IXGH > IXGN IXGN > IX G A 12N100 IXGH 12N100 IXGP 12N100 28


    OCR Scan     		PDF 30N30 28N30 4QN30 31N60 38N60 41N60 60N60 200N60 25N100A 7N60B 65A3 40N60A IXGA 12N60C 200n60 ixgh 1500 IXG IGBT ixgh

    120n60b

    Abstract: 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B
    Text: Contents IGBT V CE sat 1 TO-220 TO-263 ! TO-247 (IXGP) (IXGA) ! (IXGH) max Tc=25 °C PLUS247 (IXGX) TO-268 (IXGT) TO-264 (IXGK) miniBLOC {IXGN) Page V 300 600 40 56 ► i* G H ¿',N 30 >• IXGH 28N30 60 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 3 ÍN S 0 76 * 75 *


    OCR Scan     		PDF O-220 O-263 O-247 28N30 30N30 40N30 2N100 8N100 6N100 12N10Q 120n60b 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B

    32N60BU1

    Abstract: 32N60B h32n60b e5200 32N60BU
    Text: HiPerFAST IGBT 39N60B 39N60BS VCES ^C25 v CE sat tr , = = = = 600 V 76 A 1.7V 200 ns Preliminary data Symbol Test Conditions ^C E S Tj 600 V v CGR Tj = 25°C to 150°C; RGE = 1 M ft 600 V VGES Continuous ±20 V VGEM Transient ±30 V *C25 Tc = 25°C


    OCR Scan     		PDF IXGH39N60B IXGH39N60BS O-247 39N60BS) 32N60BU1 32N60B h32n60b e5200 32N60BU

    2QN60

    Abstract: ixgh 1500
    Text: IGBT with Diode /G ^ S p e e , S = Suffix c G series high gain, high speed V Type t jm = 150° c >- New { IXGA 12N100U1 IXGP 12N100U1 IXGH 12N100U1 I j £ 1 S. Î I* IXGH > IXGH IXGH IXGH IXGH 17N100U1 40N30BD1 22N50BU1 24N50BU1 32N50BU1 V IXGH IXGH IXGH


    OCR Scan     		PDF T0-220AB^ 12N100U1 17N100U1 40N30BD1 22N50BU1 24N50BU1 32N50BU1 2QN60BU1 2QN60 ixgh 1500

    DSE 130 -06A

    Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50
    Text: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01


    OCR Scan     		PDF AXC-051 AXC-051-R AXC-102 AXV-002 015-14to1 2x45-16io1 2x60-08io1 2x60-12io1 2x60-14io1 2x60-16io1 DSE 130 -06A vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50