1012 NPN Search Results

1012 NPN Result Highlights (5)

Part	Manufacturer	Description
CA3046	Rochester Electronics LLC	CA3046 - General Purpose NPN Transistor Array
CA3083Z-G	Rochester Electronics LLC	CA3083 - General Purpose High Current NPN Transistor Array
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8

1012 NPN Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
PHILIPS SENSOR 2032 Abstract: .47k capacitor image ccd image sensor Contact image sensor BAS28 BAT74 BC860C BFR92 BG40 CCD output buffer Text: IMAGE SENSORS FXA 1012 Frame Transfer CCD Image Sensor Objective specification File under Image Sensors Philips Semiconductors 2000 January 7 Philips Semiconductors Objective specification Frame Transfer CCD Image Sensor • 2M active pixels 1616H x 1296V	Original	1616H 101CCD WAG-05 PHILIPS SENSOR 2032 .47k capacitor image ccd image sensor Contact image sensor BAS28 BAT74 BC860C BFR92 BG40 CCD output buffer	PDF
transistor 1012 F Abstract: transistor 1012 CSA1012 1012 transistor 1012 npn Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR CSA 1012 CSC 2562 TO-220 Plastic Package High Current Switching Applications. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise	Original	O-220 C-120 CSA1012, CSC2562Rev210701 transistor 1012 F transistor 1012 CSA1012 1012 transistor 1012 npn	PDF
AD737 Abstract: AD7136 AD736 AD737A AD737AQ AD737B AD737J AD737K precision FULL WAVE RECTIFIER supply CA3046 equivalent Text: a FEATURES Computes: True rms Value Average Rectified Value Absolute Value Provides: 200 mV Full-Scale Input Range Larger Inputs with Input Attenuator Direct Interfacing with 3 1/2 Digit CMOS A/D Converters High Input Impedance of 1012 ⍀ Low Input Bias Current: 25 pA Max	Original	AD736--A AD737 AD7136 AD736 AD737A AD737AQ AD737B AD737J AD737K precision FULL WAVE RECTIFIER supply CA3046 equivalent	PDF
transistor 1012 Abstract: CSA1012 hFE is transistor to-220 c 2562 hFE is transistor to220 Text: ,6,62 /LF 46&/ Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR CSA 1012 CSC 2562 TO-220 Plastic Package High Current Switching Applications. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise	Original	O-220 C-120 CSA1012, CSC2562Rev210701 transistor 1012 CSA1012 hFE is transistor to-220 c 2562 hFE is transistor to220	PDF
transistor master replacement guide Abstract: z8051 2N2222A npn transistor DS2417 equivalent AN033 project on digital thermometer AN0346-SC01 AZ8051 Text: Application Note Using a Z8051 UART to Implement a 1-Wire Master with Multiple Slaves AN034601-1012 Abstract This application note describes how to use the UART peripherals in Zilog’s family of Z8051 MCUs as 1-Wire bus Masters. Also described are the required electrical interface,	Original	Z8051 AN034601-1012 DS18S20: DS2417: DS24B33: AN0346-SCgy transistor master replacement guide 2N2222A npn transistor DS2417 equivalent AN033 project on digital thermometer AN0346-SC01 AZ8051	PDF
BFR38 Abstract: BFR99 2N6080 2N956 BFX89 BSX33 9552N TO-117SL XO-72 pnp 2222a Text: ^ 7 SGS-THOMSON TELECOM AND DATA COMMUNICATIONS G iflO M l(L g m M § RF & MICROWAVE TRANSISTORS TO 39 .380 4L STUD 130 . 230 MHz Type P/N SD SD SD SD SD .380 NARROW 4L STUD TO 60 Config. SD 1012 SD 1014-2 SD 1229-7 SD 1229-8 SD 1018 SD 1021 SD 1022	OCR Scan	XO-72 O-117SL O-117SL 2N6080 BSX33 2N956 BFR38 BFR99 BFX89 9552N TO-117SL pnp 2222a	PDF
2SC3089 Abstract: en1012a EN10-12 high voltage fast switching npn 4A Text: Ordering number:EN1012A NPN Triple Diffused Planar Silicon Transistor 2SC3089 500V/7A Switching Regulator Applications Features Package Dimensions • High breakdown voltage VCBO≥800V . · Fast switching speed. · Wide ASO. unit:mm 2022A [2SC3089] 1 : Base	Original	EN1012A 2SC3089 00V/7A VCBO800V) 2SC3089] PW300 Cycle10% 2SC3089 en1012a EN10-12 high voltage fast switching npn 4A	PDF
SLA8001 Abstract: No abstract text available Text: SLA8001 PNP + NPN H-bridge External dimensions A Absolute maximum ratings SLA 12-pin (Ta=25°C) Ratings Symbol NPN PNP Unit VCBO 60 –60 V VCEO 60 –60 V VEBO 6 –6 V IC 12 –12 A IB 3 –3 A 5 (Ta=25°C) PT W 40 (Tc=25°C) VISO ••• 1000 (Between fin and lead pin, AC)	Original	SLA8001 12-pin) 100mA SLA8001	PDF
SLA8001 Abstract: No abstract text available Text: SLA8001 PNP + NPN H-bridge External dimensions A Absolute maximum ratings SLA Ta=25°C Ratings Symbol NPN PNP Unit VCBO 60 –60 V VCEO 60 –60 V VEBO 6 –6 V IC 12 –12 A IB 3 –3 A 5 (Ta=25°C) PT W 40 (Tc=25°C) VISO ••• 1000 (Between fin and lead pin, AC)	Original	SLA8001 100mA SLA8001	PDF
Untitled Abstract: No abstract text available Text: Ordering number:ENN1012A NPN Triple Diffused Planar Silicon Transistor 2SC3089 500V/7A Switching Regulator Applications Features Package Dimensions • High breakdown voltage VCBO≥800V . · High-speed switching. · Wide ASO. unit:mm 2022A [2SC3089] 15.6	Original	ENN1012A 2SC3089 00V/7A VCBO800V) 2SC3089] PW300 Cycle10%	PDF
2SC4215 Abstract: No abstract text available Text: 2SC4215 TO SH IBA 2SC4215 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HIGH FREQUENCY AMPLIFIER APPLICATIONS FM, RF, MIX, IF AMPLIFIER APPLICATIONS • • Small Reverse Transfer Capacitance : Cre = 0.55 pF Typ. Low Noise Figure : NF = 2 dB (Typ.) (f = 100 MHz)	OCR Scan	2SC4215 SC-70 2SC4215	PDF
npn 1000V 100a Abstract: D7ST1008 1S697 D7ST100805 D7ST1010 D7ST1012 50c020 Text: -p W Ê R Ë X DE i T S T H t i S l IN C " m tÊ B sx. v f f U I X t A A IN O y o u Æ o / ' b ü aD02b7S T \| TT _- 3333-1] R 5 D7ST1008, D7ST1010, D7ST1012 Tentative Powerex, Inc., Hillls Street, Youngwood, Pennsylvania 15697 412 925-7272 NPN Power Switching	OCR Scan	7214t21 T-33-15 D7ST100& D7ST1010, D7ST1012 Amperes/1000 D7ST1008/1010/1012, D7ST1008/1010/1012 D7ST1012 npn 1000V 100a D7ST1008 1S697 D7ST100805 D7ST1010 50c020	PDF
2SD1555 Abstract: 2SD1555 equivalent Text: SILICON NPN TRIPLE DIFFUSED MESA TYPE CO LO R TV H O R I Z O N T A L O U T P U T A P P L I C A T I O N S . FEATURES: . High Voltage :Vggo= T500V . Low Saturation Voltage: . High Speed sat = 5V(M a x .)(Ic=4A , I b = 0 .8A) :tf = 1.0(js(Max .) . Built-in Damper Type	OCR Scan	T500V 2SD1555 10/jH 2SD1555 2SD1555 equivalent	PDF
Untitled Abstract: No abstract text available Text: FMC2 S "7 > i/ Z £ /'T ra n s is to rs I t ^ J r - > 7 ^ 7 ' L / - t f a 7 ; ^ - :E - ^ K PNP/NPN y ' J a > ^ > v / • • 7 ,>f y-?-[el?&/Switching Circuit Epitaxial Planar Dual Mini-Mold PNP/NPN Silicon Transistor IV I\# i6 • $\-M T H iE I/D im e n s io n s U nit : mm	OCR Scan		PDF

t149 Abstract: T148 Transistor BFT 10 Text: h7 £ /T ra n sisto rs • — FM C2 — E T G UI éT* 9 ■ I w f l \ j é £ê -7= * ? - 9£ ? . i t r 4»+>r j .t j i § k pnp/npn >y m v E& /Sw itch ln g Circuit Epitaxial Planar Dual Mlnl-Mold PNP/NPN Silicon Transistor • Wft 3 > b ? > $>x *	OCR Scan	-22KO t149 T148 Transistor BFT 10	PDF
darlington NPN 600V 20a transistor Abstract: No abstract text available Text: SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR 6 IN 1} MP6005 ° HIGH POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS ° MOTOR CONTROL APPLICATIONS. • Package with Heat Sink Isolated to Lead. • High Collector Power Dissipation. (SIP 14 Pin	OCR Scan	MP6005 -100A/us darlington NPN 600V 20a transistor	PDF
NTE3086 Abstract: No abstract text available Text: NTE3086 Optoisolator Dual NPN Transistor Output Description: The NTE3086 is a standard dual optocoupler consisting of a GaAs Infrared LED and a silicon phototransistor per channel. This device is constructed with a high voltage insulation, double molded packaging process which offers 7.5KV withstand test capability.	Original	NTE3086 NTE3086 100mW	PDF
Untitled Abstract: No abstract text available Text: 7 f l 2 ô cl cn MQE D ROHM CO L T D G00tj31D T IRHM FMC2 h 7 > y X $ /T ran sisto rs 7 ^ 4 3 -9 0 I t : ^ d r ' > r ^ 7 V - ^ T i a 7 7; U § - ;E - ^ K PNP/NPN y U □ > h 7 > V «y^üliS/Switching Circuit Epitaxial Planar Dual Mini-Mold PNP/NPN Silicon Transistor	OCR Scan	G00tj31D	PDF
BFQ32M Abstract: of bfq63 BFQ63 transistor 643 Text: Philips Semiconductors Product specification NPN 5 GHz wideband transistor PHILIPS INTERN A T I O N A L DESCRIPTION BFQ63 SbE D • 711Gô2b G04S4Ô4 SDD ■ PHIN PINNING NPN transistor in a 10-12 metal envelope with insulated electrodes and a shield lead connected to the	OCR Scan	BFQ63 711002b BFQ32M. 7110fl2b 0D454fl7 BFQ32M of bfq63 BFQ63 transistor 643	PDF
B4150 Abstract: 15B41 WF-120 2B42 15b415 2b415 Text: WF Highlights Fork Sensors DC IR • Perfect for label detection and mark detection • PNP and NPN in the same switch 0.08.4.7 2.120 mm • Light or dark switching sensing range/fork width • Rugged aluminum housing WF Dimensional Drawing • Sensitivity adjustment	Original		PDF
2222a Abstract: tr 2222a national PN2222A national semiconductor 2222A pn2222 national semiconductor 2n2222 national semiconductor br 2222 npn PN2222A NATIONAL MPQ2222 2N/PN2222 Text: National Semiconductor PN2222 PN2222A 2N2222 2N2222A MMBT2222 MMBT2222A MPQ2222* T O - 1 16 TO- 9 2 T L /G /1 0 1 0 0 -7 T L /G /1 0 1 0 0 -5 T L /G /10100-1 NPN General Purpose Amplifier Electrical Characteristics T a	OCR Scan	MBT2222/MPQ2222/2N2222A/PN2222A/MMBT2222A 2N2222 2N2222A PN2222 PN2222A MMBT2222 MMBT2222A MPQ2222* MPQ2222 MPQ2222 2222a tr 2222a national PN2222A national semiconductor 2222A pn2222 national semiconductor 2n2222 national semiconductor br 2222 npn PN2222A NATIONAL 2N/PN2222	PDF
2N697 Abstract: 2N696 bf 697 transistor BF 697 BF 696 OC 696 2n 697 FT2N Text: NPN S ILIC O N TR A N S IS TO R S , E P IT A X IA L P LA N A R TRANSISTORS NPN SILICIUM PLANAR EPITAXIAUX , LF amplification Amplification BF 40 V V CER Switching Commutation ^21E fT Maximum power dissipation Dissipa tion de puissance maximale iti A 12 0 - 6 0	OCR Scan	2N697 2N696 2N697 2N696 bf 697 transistor BF 697 BF 696 OC 696 2n 697 FT2N	PDF
D44h7 Abstract: D44H12 Text: 3875081 G E SOLID _ STATE- DI n 1C 1 QHAf i DE 1 3 ñ 7 S D ñ l □□nDñfe, h i " D44H Series NPN POWER TRANSISTORS 30 -8 0 VOLTS 10 AMP, 50 WATTS >COMPLEMENTARY TO THE D45H SERIES The General Electric D44H is a power transistor designed for various specific and general purpose applications, such as:	OCR Scan	300ms D44h7 D44H12	PDF
DARLINGTON TRANSISTOR ARRAYS 2A Abstract: PU4422 PU3122 PU4122 Text: Power Transistor Arrays PU3122, PU4122, PU4422 PU3122, PU4122, PU4422 Package Dimensions PU3122 Silicon NPN Triple-Diffused Planar Darlington Type Power Amplifier, Switching • Features • • • • • • • Built-in 30V Zener diode b etw een C and B	OCR Scan	PU3122, PU4122, PU4422 200mJ PU3122: PU4122: DARLINGTON TRANSISTOR ARRAYS 2A PU4422 PU3122 PU4122	PDF

1012 NPN Search Results

1012 NPN Result Highlights (5)

1012 NPN Datasheets Context Search

PHILIPS SENSOR 2032

transistor 1012 F

AD737

transistor 1012

transistor master replacement guide

BFR38

2SC3089

SLA8001

SLA8001

Untitled

2SC4215

npn 1000V 100a

2SD1555

Untitled

t149

darlington NPN 600V 20a transistor

NTE3086

Untitled

BFQ32M

B4150

2222a

2N697

D44h7

DARLINGTON TRANSISTOR ARRAYS 2A