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TT electronics / BI Technologies PSS120N101N09B502 Res, 5K, 20%, 0.025W, Linear; Slide Potentiometer Type:Slim Type - Open Frame; Track Resistance:5Kohm; Resistance Tolerance:± 20%; Power Rating:25Mw; Track Taper:Linear; Potentiometer Mounting:Through Hole; Length Of Travel:20Mm Rohs Compliant: Yes \|Tt Electronics/bi Technologies PSS120N101N09B502
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	PSS120N101N09B502	Bulk			1,170	1 - 10 - 100 - 1000 - 10000 -	Buy Now
TT electronics / BI Technologies PSS120N101N09B204 Res, 200K, 20%, 0.025W, Linear; Slide Potentiometer Type:Slim Type - Open Frame; Track Resistance:200Kohm; Resistance Tolerance:± 20%; Power Rating:25Mw; Track Taper:Linear; Potentiometer Mounting:Through Hole; Length Of Travel:20Mm Rohs Compliant: Yes \|Tt Electronics/bi Technologies PSS120N101N09B204
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	PSS120N101N09B204	Bulk			1,170	1 - 10 - 100 - 1000 - 10000 -	Buy Now
TT electronics / BI Technologies PSS130N101N09W104 Res, 100K, 20%, 0.025W, Logarithmic; Slide Potentiometer Type:Slim Type - Open Frame; Track Resistance:100Kohm; Resistance Tolerance:± 20%; Power Rating:25Mw; Track Taper:Log (Audio); Potentiometer Mounting:Through Hole Rohs Compliant: Yes \|Tt Electronics/bi Technologies PSS130N101N09W104
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	PSS130N101N09W104	Bulk			1,120	1 - 10 - 100 - 1000 - 10000 -	Buy Now

101N09 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
101N09		Directed Energy	DE-SERIES FAST POWER MOSFET		Original	PDF

101N09 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
nec 2401 Abstract: DE150-101N09A PIN diode SPICE model 101N09A Text: DE150-101N09A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 100 V VGS Continuous ±20 V VGSM Transient	Original	PDF	DE150-101N09A 1100P nec 2401 DE150-101N09A PIN diode SPICE model 101N09A
PIN diode SPICE model Abstract: DE150-101N09A rf power mosfet 1n spice 101N09A Text: DE150-101N09A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 100	Original	PDF	DE150-101N09A 101N09A 1100P PIN diode SPICE model DE150-101N09A rf power mosfet 1n spice
nec 2401 Abstract: QGS 80W 30 ohm Directed Energy DE150-101N09A 201N09 Text: Directed Energy, Inc. An DE150-101N09A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR	Original	PDF	DE150-101N09A 1100P nec 2401 QGS 80W 30 ohm Directed Energy DE150-101N09A 201N09
DE-150-101N09 Abstract: 101N09 Directed Energy DE-150 Text: PRELIMINARY SPECIFICATIONS DE-150 101N09 9A, 100V, 0.16Ω US Patents 4891686, 5640045 Foreign Patents Pending 04/1999 Directed Energy, Incorporated 2401 Research Blvd, Suite 108 Fort Collins, CO USA 80526 (970) 493-1901 FAX (970) 493-1903 INTERNET www.dirnrg.com	Original	PDF	DE-150 101N09 250mA 150oC SP101N09 DE-150-101N09 101N09 Directed Energy
high power rf 10kW Abstract: HF power amplifier 1000W DE-275 RF Amplifiers 101N09 hf amplifier 1000w DE-150 3RH1140-1AD00 101N30 102N02 Text: T H E P U L S E O F T H E F U T U R E DE-SERIES FAST POWER MOSFETS DE-150 SERIES The DE-150 Series are the lowest power devices in the DE-Series family. However, their speed and frequency are the highest. The upper operational frequency of the DE-150 Series is approximately 110MHz. The switching speed of the device family is on the order	Original	PDF	DE-150 DE-150 110MHz. DE-375X2 102N20 501N40 high power rf 10kW HF power amplifier 1000W DE-275 RF Amplifiers 101N09 hf amplifier 1000w 3RH1140-1AD00 101N30 102N02
DE275-101N30A Abstract: DE-275-101N30 de275 PIN diode SPICE model Text: DE275-101N30A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 100 V VGS Continuous ±20 V VGSM Transient	Original	PDF	DE275-101N30A 101N09A 1100P DE275-101N30A DE-275-101N30 de275 PIN diode SPICE model
mospower applications handbook Abstract: ASC capacitor Rudy Severns siliconix handbook SERVICE MANUAL lg r500 FPS-4N inverter lg ig drive p1 "mospower applications handbook" 47R16 20MHZ Text: DIRECTED ENERGY, INC. APPLICATION NOTE GATE DRIVER DESIGN For Switch-Mode Applications and the DE-SERIES MOSFET TRANSISTOR George J. Krausse, Directed Energy, Inc. Abstract This application note discusses the gate driver design pattern philosophies that are essential in maximizing the performance of the DESERIES MOSFET in both switching speed and frequency for switch mode	Original	PDF
501N04 Abstract: DE-275 101N30 5kw power amplifier amplifier 1000W 8 DE-375 101N09 DE-275 Directed Energy 101N30 102N05 Text: e DE-SERIES FAST POWER MOSFETS DE-150 SERIES The DE-150 SERIES are the lowest power devices in the D E-SERIES family. However their speed and frequency are the highest. The upper operational frequency of the DE-150 SERIES is approximately 110MHz. The switching speed of the device	OCR Scan	PDF	DE-150 110MHz. 501N04 30MHz. DE-375 102N10 501N21 DE-275 101N30 5kw power amplifier amplifier 1000W 8 101N09 DE-275 Directed Energy 101N30 102N05