Untitled
Abstract: No abstract text available
Text: Application Note 1026 Some Application Hints for AP3406 Prepared by Yuan Shan Shan System Engineering Dept. 1. Introduction This IC is available in TSOT-23-5 and SOT-23-5 packages. The AP3406 is a 1.1MHz fixed frequency, current mode, PWM synchronous buck step-down DC-DC
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AP3406
TSOT-23-5
OT-23-5
AP3406
650mA
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AP3406
Abstract: AP3406-ADJ step-down sot-23-5 input DSA00514
Text: Application Note 1026 Some Application Hints for AP3406 Prepared by Yuan Shan Shan System Engineering Dept. 1. Introduction This IC is available in TSOT-23-5 and SOT-23-5 packages. The AP3406 is a 1.1MHz fixed frequency, current mode, PWM synchronous buck step-down DC-DC
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AP3406
TSOT-23-5
OT-23-5
AP3406
650mA
AP3406-ADJ
step-down sot-23-5 input
DSA00514
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DDR4 "application note"
Abstract: LTC3876 dual tracking linear power supply
Text: Dual DC/DC Controller for DDR Power with Differential VDDQ Sensing and ±50mA VT T Reference Design Note 1026 Ding Li Introduction The LTC 3876 is a complete DDR power solution, compatible with DDR1, DDR2, DDR3 and DDR4 lower voltage standards. The IC includes VDDQ and V TT DC/
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LTC3876
200kHz
dn1026f
DDR4 "application note"
dual tracking linear power supply
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SS550
Abstract: 948S
Text: ON Semiconductor Selector Guide − Power MOSFET Products MOSFET − Surface Mount 2.5 V/2.7 V* 1.8 V QT Typ nC @ VGS = 4.5 V (5.0 V)/10 V* 0.052 0.072 0.12 12 −3.7 0.96 0.085 0.12 0.21 7.5 −3.2 0.20 0.35 −1.3 −1.0 RDS(on) Max (W) @ VGS = VDSS (V)
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OT-23
NTGS3433
NTGS3443
NTGS3441
NTGS4111P
NTGS3455
NTGS3446
NUD3048MT1
NTR2101P
NTR4101P
SS550
948S
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Untitled
Abstract: No abstract text available
Text: Toroidal Gate Drive Transformers • Deliver MOSFET / IGBT gate power and timing signals simultaneously · Directly drive high-side MOSFETs / IGBTs on busses up to 400V · Excellent risetime, overshoot, and peak current characteristics · >8 mm minimum creepage and clearance from
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HT0740N4
Abstract: HT07 narrow so 400v input power supply Isolated Driver
Text: BACK HT0740 Advanced Information High Voltage Isolated MOSFET Driver Ordering Information Package Options 8-Pin Narrow Body SOIC 8-Pin Plastic DIP HT0740LG HT0740N4 Features General Description ±400V input to output isolation The Supertex HT07 is a single high voltage low input current
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HT0740
HT0740LG
HT0740N4
600pF
600pF
HT0740N4
HT07
narrow so
400v input power supply
Isolated Driver
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pin diagram of MOSFET
Abstract: power supply 400v circuit diagram circuit diagram of mosfet switches mosfet driver 400v "MOSFET Driver" AUDIO DELAY CIRCUIT DIAGRAM HT0740 HT0740LG HT0740N4 1026 soic-8
Text: HT0740 Advanced Information High Voltage Isolated MOSFET Driver Ordering Information Package Options 8-Pin Narrow Body SOIC 8-Pin Plastic DIP HT0740LG HT0740N4 Features General Description ±400V input to output isolation The Supertex HT07 is a single high voltage low input current
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HT0740
HT0740LG
HT0740N4
600pF
pin diagram of MOSFET
power supply 400v circuit diagram
circuit diagram of mosfet switches
mosfet driver 400v
"MOSFET Driver"
AUDIO DELAY CIRCUIT DIAGRAM
HT0740
HT0740LG
HT0740N4
1026 soic-8
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diac advantageS AND DISADVANTAGES
Abstract: No abstract text available
Text: AN10961 Dimmable CFL using the UBA2027X family Rev. 2 — 8 June 2012 Application note Document information Info Content Keywords CFL, Triac dimmable, UBA2027X Abstract This application note describes the design of a dimmable Compact Fluorescent Lamp CFL with low dimming level using the UBA2027X.
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AN10961
UBA2027X
UBA2027X
UBA2027X.
diac advantageS AND DISADVANTAGES
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Untitled
Abstract: No abstract text available
Text: 50V N-ch MOSFET EKV550 January. 2006 Package—TO-220 Features • Low on-resistance • Avalanche energy capability guaranteed • Built-in Gate protection diode against electrostatic discharge ESD Applications • DC-DC Converters • High speed switching
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EKV550
O-220
T02-005JA-060111
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Untitled
Abstract: No abstract text available
Text: MOSFET FKP252 December. 2005 Package-TO220F Features • Low on-resistance • Low input capacitance • Avalanche energy capability guaranteed Applications • PDP driving • High speed switching Equivalent circuit D 2 G (1) S (3) Absolute maximum ratings
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FKP252
Package---TO220F
T02-003EA-051206
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Untitled
Abstract: No abstract text available
Text: 60V N -ch MOSFET 2SK3711 December 2005 Package—TO3P Features • Low on-resistance • Built-in gate protection diode • Avalanche energy capability guaranteed Applications • Electric power steering • High current switching Equivalent circuit D 2
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2SK3711
T02-002EA-051124
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Untitled
Abstract: No abstract text available
Text: User Guide 020 ISL8117EVAL2Z Evaluation Board User Guide Description Key Features The ISL8117EVAL2Z evaluation board shown in Figure 1 features the ISL8117. The ISL8117 is a 60V high voltage synchronous buck controller that offers external soft-start, independent enable functions and integrates UV/OV/OC/OT
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ISL8117EVAL2Z
ISL8117.
ISL8117
200kHz
UG020
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA200N055T2-7 VDSS ID25 = 55V = 200A Ω ≤ 4.2mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (7-lead) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 55 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ
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IXTA200N055T2-7
O-263
200N055T2
3-06-08-B
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Untitled
Abstract: No abstract text available
Text: TrenchT2TM Power MOSFET VDSS ID25 IXTA200N055T2 IXTP200N055T2 = 55V = 200A Ω ≤ 4.2mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 G Symbol Test Conditions VDSS TJ = 25°C to 175°C 55 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 55 V VGSM Transient
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IXTA200N055T2
IXTP200N055T2
O-263
O-220
200N055T2
12-15-08-C
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Untitled
Abstract: No abstract text available
Text: NTTD1P02R2 Power MOSFET -1.45 Amps, -20 Volts P−Channel Enhancement Mode Dual Micro8 Package Features • • • • • • http://onsemi.com Ultra Low RDS on Higher Efficiency Extending Battery Life Logic Level Gate Drive Miniature Dual Micro8 Surface Mount Package
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NTTD1P02R2
NTTD1P02R2
0E-05
0E-04
0E-03
0E-02
0E-01
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intersil jfet
Abstract: RFP15N15
Text: A Spice-2 Subcircuit Representation For Power MOSFETs Using Empirical Methods Application Note October 1999 AN9209.2 Abstract Discussion An accurate power-MOSFET model is not widely available for CAD circuit simulation. This work provides a subcircuit model which is compatible with SPICE-2 software and
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AN9209
intersil jfet
RFP15N15
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IXTA200N055T2-7
Abstract: IXTA200N055T2 200N055
Text: Preliminary Technical Information IXTA200N055T2-7 TrenchT2TM Power MOSFET VDSS ID25 = 55V = 200A Ω ≤ 4.2mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (7-lead) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 55 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ
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IXTA200N055T2-7
O-263
200N055T2
3-06-08-B
IXTA200N055T2-7
IXTA200N055T2
200N055
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Untitled
Abstract: No abstract text available
Text: HT0740 Advanced Information High Voltage Isolated MOSFET Driver Ordering Information Package Options 8-Pin Narrow Body SOIC 8-Pin Plastic DIP HT0740LG HT0740N4 Features General Description □ ±400V input to output isolation □ No external voltage supply required
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HT0740
HT0740LG
HT0740N4
600pF
7732T5
00D4413
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Untitled
Abstract: No abstract text available
Text: HT0740 Advanced Information High Voltage Isolated MOSFET Driver Ordering Information Package Options 8-Pin Narrow Body SOIC 8-Pin Plastic DIP HT0740LG HT0740N4 Features General Description □ +400V input to output isolation □ No external voltage supply required
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HT0740
HT0740LG
HT0740N4
600pF
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marking code g2s
Abstract: No abstract text available
Text: SIEMENS < *,0 0 5 S Silicon N-Channel MOSFET Tetrode •For low-noise, high gain-controlled input stages up to 1GH; ■Operating voltage 5V 1Integrated stabilized bias network X AGC o HF oIn p u t JX-Ih D ra in G2 I HF O u tp u t + DC G1 1 — r GND ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BF1005S
Q62702-F1665
OT-143
1005S
800MHz
BF1005S
marking code g2s
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mosfet 1026
Abstract: 1026 mosfet
Text: ERFS440A Advanced Power MOSFET FEATURES BVdss = 500 V • ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 pA M ax. @ VOS= 500V
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ERFS440A
IRFS440A
mosfet 1026
1026 mosfet
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IRFP460
Abstract: IRFP460 IR diode sg 89a international rectifier NE 22 dioda rectifier
Text: PD-9.512B International S Rectifier IRFP460 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements V dss - 5 0 0 V R DS on = 0 . 2 7 0
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IRFP460
O-247
T0-220
O-218
IRFP460
IRFP460 IR
diode sg 89a
international rectifier NE 22
dioda rectifier
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1RFP460
Abstract: irfp460 i IRFP460
Text: PD-9.512B International S ü R e ctifie r IRFP460 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements V DSS = 500V R DS on = 0 - 2 7 0
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IRFP460
O-247
O-220
O-218
1RFP460
irfp460 i
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IRFP460
Abstract: IRFP460 IR irfp460 mosfet
Text: International mg Rectifier 4ASS452 GD155M4 35T H I N R HEXFET Power MOSFET INTERNATIONAL RECTIFIER • • • • • • PD-9.512B IRFP460 Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling
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4ASS452
GD155M4
IRFP460
O-247
O-220
O-218
IRFP460
IRFP460 IR
irfp460 mosfet
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