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    10N80 Search Results

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    10N80 Price and Stock

    Rochester Electronics LLC FQA10N80

    MOSFET N-CH 800V 9.8A TO3P
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    DigiKey FQA10N80 Tube 9,066 193
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    • 1000 $1.56
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    Rochester Electronics LLC FQAF10N80

    MOSFET N-CH 800V 6.7A TO3PF
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FQAF10N80 Tube 7,549 166
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    onsemi FDBL0210N80

    MOSFET N-CH 80V 240A 8HPSOF
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    DigiKey FDBL0210N80 Digi-Reel 3,648 1
    • 1 $5.59
    • 10 $3.929
    • 100 $5.59
    • 1000 $2.73924
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    FDBL0210N80 Cut Tape 3,648 1
    • 1 $5.59
    • 10 $3.929
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    FDBL0210N80 Reel 2,000 2,000
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    Avnet Americas FDBL0210N80 Reel 22 Weeks 2,000
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    FDBL0210N80 Reel 22 Weeks 2,000
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    Mouser Electronics FDBL0210N80 3,849
    • 1 $4.97
    • 10 $3.92
    • 100 $2.95
    • 1000 $2.74
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    Newark FDBL0210N80 Bulk 2,000
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    Rochester Electronics FDBL0210N80 82,000 1
    • 1 $3.04
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    • 100 $2.86
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    Ameya Holding Limited FDBL0210N80 22,358
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    Richardson RFPD FDBL0210N80 2,000
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    Avnet Silica FDBL0210N80 23 Weeks 2,000
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    EBV Elektronik FDBL0210N80 24 Weeks 2,000
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    Rochester Electronics LLC SSF10N80A

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SSF10N80A Bulk 1,381 123
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    • 1000 $2.45
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    STMicroelectronics STH10N80K5-2AG

    MOSFET N-CH 800V 8A H2PAK-2
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    DigiKey STH10N80K5-2AG Cut Tape 831 1
    • 1 $5.31
    • 10 $3.533
    • 100 $5.31
    • 1000 $2.09716
    • 10000 $2.09716
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    STH10N80K5-2AG Digi-Reel 831 1
    • 1 $5.31
    • 10 $3.533
    • 100 $5.31
    • 1000 $2.09716
    • 10000 $2.09716
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    Avnet Americas STH10N80K5-2AG Reel 14 Weeks 1,000
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    • 1000 $1.983
    • 10000 $1.88857
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    STH10N80K5-2AG Reel 14 Weeks 1,000
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    • 1000 $1.983
    • 10000 $1.88857
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    Mouser Electronics STH10N80K5-2AG 805
    • 1 $4.35
    • 10 $3.12
    • 100 $2.31
    • 1000 $1.98
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    Newark STH10N80K5-2AG Cut Tape 1
    • 1 $4.62
    • 10 $3.94
    • 100 $3.26
    • 1000 $2.57
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    STMicroelectronics STH10N80K5-2AG 805 1
    • 1 $4.26
    • 10 $3.06
    • 100 $2.26
    • 1000 $1.95
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    Avnet Silica STH10N80K5-2AG 15 Weeks 1,000
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    EBV Elektronik STH10N80K5-2AG 15 Weeks 1,000
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    10N80 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is


    Original
    PDF 10N80 10N80 10N80L-T3P-T QW-R502-218

    10N80P

    Abstract: 10n80 IXFP10N80P
    Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFA 10N80P IXFH 10N80P IXFP 10N80P = = ≤ ≤ VDSS ID25 RDS on trr 800 V 10 A Ω 1.2 250 ns N-Channel Enhancement Mode Symbol Test Conditions VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original
    PDF 10N80P O-220, O-247) 405B2 10N80P 10n80 IXFP10N80P

    10n80

    Abstract: 10n80p IXFC10N80P
    Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET ISOPLUS220TM IXFC 10N80P VDSS ID25 RDS on trr (Electrically Isolated Back Surface) = 800 V = 5 A ≤ 1.2 mΩ Ω ≤ 250 ns N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol


    Original
    PDF ISOPLUS220TM 10N80P 10n80 10n80p IXFC10N80P

    MOSFET 800V 10A TO-3P

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is


    Original
    PDF 10N80 10N80 10N80L-T3P-T QW-R502-218 MOSFET 800V 10A TO-3P

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is


    Original
    PDF 10N80 10N80 10N80L-T3P-T 10N80G-T3P-T 10N80L-TC3-T 10N8at QW-R502-218

    10N80L

    Abstract: 10n80 MOSFET 800V 10A TO-3P mosfet 10a 800v high power
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is


    Original
    PDF 10N80 10N80 10N80L-T3P-T 10N80G-T3P-T 10N80L-TC3-T 10N80G-TC3ues QW-R502-218 10N80L MOSFET 800V 10A TO-3P mosfet 10a 800v high power

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N80 Preliminary Power MOSFET 800 V N-CHANNEL MOSFET „ DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is


    Original
    PDF 10N80 10N80 10N80L 10N80G 10N80-T3P-T QW-R502-218

    mosfet 10a 800v

    Abstract: MOSFET 800V 10A TO-3P 10N80 MOSFET 800V 10A 10N80L mosfet 10a 800v high power
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is


    Original
    PDF 10N80 10N80 10N80L-T3P-T 10N80G-T3P-T 10N80L-TF1-T 10N80G-t QW-R502-218 mosfet 10a 800v MOSFET 800V 10A TO-3P MOSFET 800V 10A 10N80L mosfet 10a 800v high power

    10n80

    Abstract: MOSFET 800V 10A TO-3P MOSFET 800V 10A mosfet 10a 800v high power
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 800V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is


    Original
    PDF 10N80 10N80 10N80L-T3P-T 10N80G-T3P-T 10N80L-TF1-T 10N80G-TF1-Tt QW-R502-218 MOSFET 800V 10A TO-3P MOSFET 800V 10A mosfet 10a 800v high power

    10N80

    Abstract: MOSFET 800V 10A 10n8 mosfet 800v diode 218
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 800V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is


    Original
    PDF 10N80 10N80 10N80L-T3P-T 10N80G-T3P-T QW-R502-218 MOSFET 800V 10A 10n8 mosfet 800v diode 218

    MOSFET 800V 10A TO-3P

    Abstract: 10n80 mosfet 337
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is


    Original
    PDF 10N80 10N80 10N80L-T3P-T 10N80G-T3P-T 10N80L-TF1-T 10N80G-TF1ues QW-R502-218 MOSFET 800V 10A TO-3P mosfet 337

    10n80

    Abstract: MOSFET 800V 10A MOSFET 800V 10A TO-3P 10n80 transistor 10N80L VDD400 mosfet 10a 800v
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 800V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is


    Original
    PDF 10N80 10N80 10N80L 10N80G 10N80-T3P-T QW-R502-218 MOSFET 800V 10A MOSFET 800V 10A TO-3P 10n80 transistor 10N80L VDD400 mosfet 10a 800v

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original
    PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    40n80

    Abstract: IXGH40N60 38N60 12N60U1 40N80A 50N60AU1 20n60 igbt igbt 20n60 60n60 ixgh IXGA24N60A
    Text: Insulated Gate Bipolar Transistors IGBT 4^ r/ioei fType VCE(sat) max. Cto. typ. typ. A V pF pP 20 40 40 50 76 75 75 10 20 31 30 38 40 60 2.5 2.5 1.8 2.5 1.8 2.5 1.8 750 1500 1500 2800 2500 4500 4000 30 40 40 70 70 60 100 20 34 50 10 17 25 3.5 750 1500 2750


    OCR Scan
    PDF 10N60 20N60 31N60 30N60 38N60 40N60 60N60 10N100 17N100 25N100 40n80 IXGH40N60 12N60U1 40N80A 50N60AU1 20n60 igbt igbt 20n60 60n60 ixgh IXGA24N60A