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    10N80 Search Results

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    10N80 Price and Stock

    Littelfuse Inc IXFA10N80P

    MOSFET N-CH 800V 10A TO263
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFA10N80P Tube 10,400 1
    • 1 $4.69
    • 10 $4.69
    • 100 $4.69
    • 1000 $2.10324
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    Newark IXFA10N80P Bulk 300
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    • 1000 $2.41
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    RS IXFA10N80P Bulk 8 Weeks 50
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    • 100 $3.25
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    onsemi FDBL0210N80

    MOSFET N-CH 80V 240A 8HPSOF
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    DigiKey FDBL0210N80 Cut Tape 3,628 1
    • 1 $6.55
    • 10 $4.417
    • 100 $6.55
    • 1000 $2.73924
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    FDBL0210N80 Digi-Reel 3,628 1
    • 1 $6.55
    • 10 $4.417
    • 100 $6.55
    • 1000 $2.73924
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    FDBL0210N80 Reel 2,000 2,000
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    Avnet Americas FDBL0210N80 Reel 13 Weeks 2,000
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    • 10000 $2.61872
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    Mouser Electronics FDBL0210N80 3,849
    • 1 $4.97
    • 10 $3.92
    • 100 $2.95
    • 1000 $2.74
    • 10000 $2.67
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    Newark FDBL0210N80 Bulk 2,000
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    • 1000 $2.92
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    Rochester Electronics FDBL0210N80 383,676 1
    • 1 $3.04
    • 10 $3.04
    • 100 $2.86
    • 1000 $2.58
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    Ameya Holding Limited FDBL0210N80 97
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    Richardson RFPD FDBL0210N80 2,000
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    Avnet Silica FDBL0210N80 14 Weeks 2,000
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    EBV Elektronik FDBL0210N80 15 Weeks 2,000
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    STMicroelectronics STH10N80K5-2AG

    MOSFET N-CH 800V 8A H2PAK-2
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey STH10N80K5-2AG Digi-Reel 831 1
    • 1 $5.31
    • 10 $3.533
    • 100 $5.31
    • 1000 $2.09716
    • 10000 $2.09716
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    STH10N80K5-2AG Cut Tape 831 1
    • 1 $5.31
    • 10 $3.533
    • 100 $5.31
    • 1000 $2.09716
    • 10000 $2.09716
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    Avnet Americas STH10N80K5-2AG Reel 14 Weeks 1,000
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    • 1000 $1.983
    • 10000 $1.86635
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    STH10N80K5-2AG Reel 14 Weeks 1,000
    • 1 -
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    • 100 -
    • 1000 $2.06232
    • 10000 $1.94334
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    Mouser Electronics STH10N80K5-2AG 805
    • 1 $4.93
    • 10 $3.41
    • 100 $2.47
    • 1000 $1.98
    • 10000 $1.98
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    Newark STH10N80K5-2AG Cut Tape 1
    • 1 $4.85
    • 10 $3.49
    • 100 $2.68
    • 1000 $2.35
    • 10000 $2.35
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    STMicroelectronics STH10N80K5-2AG 805 1
    • 1 $4.83
    • 10 $3.34
    • 100 $2.42
    • 1000 $2.03
    • 10000 $2.03
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    Avnet Silica STH10N80K5-2AG 15 Weeks 1,000
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    EBV Elektronik STH10N80K5-2AG 15 Weeks 1,000
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    STMicroelectronics STF10N80K5

    MOSFET N-CH 800V 9A TO220FP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey STF10N80K5 Tube 795 1
    • 1 $3.95
    • 10 $3.95
    • 100 $3.95
    • 1000 $1.3853
    • 10000 $1.331
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    Avnet Americas STF10N80K5 Tube 14 Weeks 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.34277
    • 10000 $1.2653
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    Mouser Electronics STF10N80K5 677
    • 1 $2.53
    • 10 $2.53
    • 100 $1.55
    • 1000 $1.34
    • 10000 $1.3
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    Newark STF10N80K5 Bulk 1
    • 1 $2.69
    • 10 $2.27
    • 100 $1.75
    • 1000 $1.64
    • 10000 $1.64
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    STMicroelectronics STF10N80K5 677 1
    • 1 $2.42
    • 10 $2.42
    • 100 $1.48
    • 1000 $1.33
    • 10000 $1.33
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    Bristol Electronics STF10N80K5 150
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    ComSIT USA STF10N80K5 1,000
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    Avnet Silica STF10N80K5 1,000 15 Weeks 50
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    Chip One Stop STF10N80K5 Tube 25
    • 1 $1.72
    • 10 $1.71
    • 100 $1.71
    • 1000 $1.71
    • 10000 $1.71
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    EBV Elektronik STF10N80K5 15 Weeks 50
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    Win Source Electronics STF10N80K5 17,069
    • 1 -
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    • 100 $2.1008
    • 1000 $1.9392
    • 10000 $1.9392
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    Littelfuse Inc IXFP10N80P

    MOSFET N-CH 800V 10A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFP10N80P Tube 240 1
    • 1 $5.26
    • 10 $5.26
    • 100 $5.26
    • 1000 $2.43512
    • 10000 $2.43512
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    Newark IXFP10N80P Bulk 300
    • 1 -
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    • 100 $4.09
    • 1000 $3.28
    • 10000 $3.05
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    RS IXFP10N80P Bulk 8 Weeks 50
    • 1 -
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    • 100 $4.43
    • 1000 $4.43
    • 10000 $4.43
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    10N80 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is


    Original
    10N80 10N80 10N80L-T3P-T QW-R502-218 PDF

    10N80P

    Abstract: 10n80 IXFP10N80P
    Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFA 10N80P IXFH 10N80P IXFP 10N80P = = ≤ ≤ VDSS ID25 RDS on trr 800 V 10 A Ω 1.2 250 ns N-Channel Enhancement Mode Symbol Test Conditions VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original
    10N80P O-220, O-247) 405B2 10N80P 10n80 IXFP10N80P PDF

    10n80

    Abstract: 10n80p IXFC10N80P
    Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET ISOPLUS220TM IXFC 10N80P VDSS ID25 RDS on trr (Electrically Isolated Back Surface) = 800 V = 5 A ≤ 1.2 mΩ Ω ≤ 250 ns N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol


    Original
    ISOPLUS220TM 10N80P 10n80 10n80p IXFC10N80P PDF

    MOSFET 800V 10A TO-3P

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is


    Original
    10N80 10N80 10N80L-T3P-T QW-R502-218 MOSFET 800V 10A TO-3P PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is


    Original
    10N80 10N80 10N80L-T3P-T 10N80G-T3P-T 10N80L-TC3-T 10N8at QW-R502-218 PDF

    10N80L

    Abstract: 10n80 MOSFET 800V 10A TO-3P mosfet 10a 800v high power
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is


    Original
    10N80 10N80 10N80L-T3P-T 10N80G-T3P-T 10N80L-TC3-T 10N80G-TC3ues QW-R502-218 10N80L MOSFET 800V 10A TO-3P mosfet 10a 800v high power PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N80 Preliminary Power MOSFET 800 V N-CHANNEL MOSFET „ DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is


    Original
    10N80 10N80 10N80L 10N80G 10N80-T3P-T QW-R502-218 PDF

    mosfet 10a 800v

    Abstract: MOSFET 800V 10A TO-3P 10N80 MOSFET 800V 10A 10N80L mosfet 10a 800v high power
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is


    Original
    10N80 10N80 10N80L-T3P-T 10N80G-T3P-T 10N80L-TF1-T 10N80G-t QW-R502-218 mosfet 10a 800v MOSFET 800V 10A TO-3P MOSFET 800V 10A 10N80L mosfet 10a 800v high power PDF

    10n80

    Abstract: MOSFET 800V 10A TO-3P MOSFET 800V 10A mosfet 10a 800v high power
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 800V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is


    Original
    10N80 10N80 10N80L-T3P-T 10N80G-T3P-T 10N80L-TF1-T 10N80G-TF1-Tt QW-R502-218 MOSFET 800V 10A TO-3P MOSFET 800V 10A mosfet 10a 800v high power PDF

    10N80

    Abstract: MOSFET 800V 10A 10n8 mosfet 800v diode 218
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 800V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is


    Original
    10N80 10N80 10N80L-T3P-T 10N80G-T3P-T QW-R502-218 MOSFET 800V 10A 10n8 mosfet 800v diode 218 PDF

    MOSFET 800V 10A TO-3P

    Abstract: 10n80 mosfet 337
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is


    Original
    10N80 10N80 10N80L-T3P-T 10N80G-T3P-T 10N80L-TF1-T 10N80G-TF1ues QW-R502-218 MOSFET 800V 10A TO-3P mosfet 337 PDF

    10n80

    Abstract: MOSFET 800V 10A MOSFET 800V 10A TO-3P 10n80 transistor 10N80L VDD400 mosfet 10a 800v
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 800V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is


    Original
    10N80 10N80 10N80L 10N80G 10N80-T3P-T QW-R502-218 MOSFET 800V 10A MOSFET 800V 10A TO-3P 10n80 transistor 10N80L VDD400 mosfet 10a 800v PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original
    MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 PDF

    40n80

    Abstract: IXGH40N60 38N60 12N60U1 40N80A 50N60AU1 20n60 igbt igbt 20n60 60n60 ixgh IXGA24N60A
    Text: Insulated Gate Bipolar Transistors IGBT 4^ r/ioei fType VCE(sat) max. Cto. typ. typ. A V pF pP 20 40 40 50 76 75 75 10 20 31 30 38 40 60 2.5 2.5 1.8 2.5 1.8 2.5 1.8 750 1500 1500 2800 2500 4500 4000 30 40 40 70 70 60 100 20 34 50 10 17 25 3.5 750 1500 2750


    OCR Scan
    10N60 20N60 31N60 30N60 38N60 40N60 60N60 10N100 17N100 25N100 40n80 IXGH40N60 12N60U1 40N80A 50N60AU1 20n60 igbt igbt 20n60 60n60 ixgh IXGA24N60A PDF