dp 12A
Abstract: 241-7-36A47 DP 6 W E179499 241-8-10A51 241-3-10A1 241-3-12A2 241-4-10A11 241-5-10A21 241-3-16A3
Text: Laminated Transformers Low Frequency, Open-Style Laminated, Chassis-Tran Series Part Number Secondary RMS Rating Single 115V Dual 115/230V 241-3-10A1 not available 10V C.T. @ 0.25A 241-4-10A11 DP 241-4-10A11 10V C.T. @ 0.6A n UL, 506, File E73539 241-5-10A21 DP 241-5-10A21 10V C.T. @ 1.2A
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115/230V
241-3-10A1
241-4-10A11
E73539
241-5-10A21
E179499
241-6-10A31
dp 12A
241-7-36A47
DP 6 W
E179499
241-8-10A51
241-3-10A1
241-3-12A2
241-3-16A3
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MT-8-15A06
Abstract: DP 6 W DMT-8-12A05 Power transformers
Text: Series 241 and DP 241 Power Transformers CHASSIS-TRAN Power Transformers Single 115V 241-3-10A1 241-4-10A11 241-5-10A21 241-6-10A31 241-7-10A41 241-8-10A51 241-3-12A2 241-4-12A12 241-5-12A22 241-6-12A32 241-7-12A42 241-8-12A52 241-3-16A3 241-4-16A13 241-5-16A23
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241-3-10A1
241-4-10A11
241-5-10A21
241-6-10A31
241-7-10A41
241-8-10A51
241-3-12A2
241-4-12A12
241-5-12A22
241-6-12A32
MT-8-15A06
DP 6 W
DMT-8-12A05
Power transformers
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Untitled
Abstract: No abstract text available
Text: ESTABLISHED RELIABILITY INDUCTORS - THRU HOLE ER10M Molded Shielded RF Inductors - Military Approved MIL-PRF-39010/08/09/10 PART MIL PART L µH Q TEST NUMBER NUMBER MIN FREQ. MHz SRF MHz MIN. DCR OHMS MAX. CURRENT INDUCTANCE RATING TOLERANCE mA DC 2 SIDED LASER MARKING
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ER10M
MIL-PRF-39010/08/09/10
MIL-PRF-39010/08
08BR10KM
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10a201
Abstract: No abstract text available
Text: ESTABLISHED RELIABILITY INDUCTORS - THRU HOLE ER10M TRADITIONAL Pb Molded Unshielded RF Inductors - Military Approved MIL-PRF-39010/08/09/10 Level R Qualified PART MIL PART L µH Q TEST SRF NUMBER NUMBER MIN FREQ. MHz MHz MIN. ER10M100*^ ER10M110J^ ER10M120*^
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ER10M
MIL-PRF-39010/08/09/10
ER10M100*
ER10M110J^
ER10M120*
ER10M130J^
ER10M150*
ER10M160J^
ER10M180*
ER10M200J^
10a201
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6CS3
Abstract: Infrared Receiver sensor HD6432631 HD6432632 HD6432633 HD64F2633 HD64F2633R 433 transmitter, pcb layout master guide st semiconductor ERN 1387
Text: To all our customers Information regarding change of names mentioned within this document, to Renesas Technology Corp. On April 1st 2003 the following semiconductor operations were transferred to Renesas Technology Corporation: operations covering microcomputer, logic,
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FP-128B
FP-128B
H8S/2633
H8S/2633R
H8S/2695
6CS3
Infrared Receiver sensor
HD6432631
HD6432632
HD6432633
HD64F2633
HD64F2633R
433 transmitter, pcb layout
master guide st semiconductor
ERN 1387
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16b3
Abstract: how getting lower voltage from 7805C regulator variable voltage with 7805C design a circuit for 3V from 7805C regulator MAX3221-MAX3243 watchman robot alters max servo board seiko scr FIR 3d Servo motor based mobile robot control 1C00
Text: IsoPod Users Manual 1. Warranty New Micros, Inc. warrants its products against defects in materials and workmanship for a period of 90 days. If you discover a defect, New Micros, Inc. will, at its option, repair, replace, or refund the purchase price. Simply call our sales department for an RMA
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RS-232
RS-422
RS-485
S80728HN
TJA1050
16b3
how getting lower voltage from 7805C regulator
variable voltage with 7805C
design a circuit for 3V from 7805C regulator
MAX3221-MAX3243
watchman robot
alters max servo board seiko
scr FIR 3d
Servo motor based mobile robot control
1C00
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ZXMN10A11G
Abstract: ZXMN10A11GTA ZXMN10A11GTC
Text: 10A11G 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 100V; RDS(ON)= 0.35 ID= 2.4A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This
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ZXMN10A11G
OT223
OT223
ZXMN10A11GTA
ZXMN10A11GTC
ZXMN10A11G
ZXMN10A11GTA
ZXMN10A11GTC
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ADV AN CE I N FORM AT I ON 10A11G 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits ID RDS(on) TA = 25°C 350mΩ @ VGS = 10V 2.4A 450mΩ @ VGS = 6.0V 2.1A 100V • Fast switching speed
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ZXMN10A11G
AEC-Q101
J-STD-020
MIL-STD-202,
DS32056
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Untitled
Abstract: No abstract text available
Text: QPL RF INDUCTORS - THRU HOLE ER10M TRADITIONAL Established Reliability Wirewound, Molded, Level R Qualified, MIL-PRF-39010 Pb M39010/08 Phenolic Core /09 Powdered Iron Core /10 Ferrite Core PART NUMBER ER10M100*^ ER10M110J^ ER10M120*^ ER10M130J^ ER10M150*^
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ER10M
MIL-PRF-39010
M39010/08
ER10M100*
ER10M110J^
ER10M120*
ER10M130J^
ER10M150*
ER10M160J^
ER10M180*
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Untitled
Abstract: No abstract text available
Text: ESTABLISHED RELIABILITY INDUCTORS - THRU HOLE ER10M Molded Shielded RF Inductors - Military Approved MIL-PRF-39010/08/09/10 PART MIL PART L µH Q TEST NUMBER NUMBER MIN FREQ. MHz SRF MHz MIN. DCR OHMS MAX. CURRENT INDUCTANCE RATING TOLERANCE mA DC 2 SIDED LASER MARKING
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ER10M
MIL-PRF-39010/08/09/10
MIL-PRF-39010/08
ER10M100
ER10M110JP
ER10M120
ER10M130JP
ER10M150
ER10M160JP
ER10M180
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HD64F2633F25
Abstract: ERN 1387 C16C Hitachi DSA00280
Text: H8S/2633 Series H8S/2633 HD6432633 H8S/2632 HD6432632 H8S/2631 HD6432631 H8S/2633 F-ZTAT HD64F2633 H8S/2633R F-ZTAT™ HD64F2633R H8S/2695 HD6432695 Hardware Manual ADE-602-165C Rev. 4.0 8/29/02 Hitachi, Ltd. Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s
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H8S/2633
H8S/2633
HD6432633
H8S/2632
HD6432632
H8S/2631
HD6432631
HD64F2633
H8S/2633R
HD64F2633F25
ERN 1387
C16C
Hitachi DSA00280
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10A11
Abstract: No abstract text available
Text: 10A11G 110V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 100V; RDS(ON)= 0.35 ID= 2.4A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This
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ZXMN10A11G
OT223
OT223
ZXMN10A11GFTA
ZXMN10A11GFTC
10A11
|
Untitled
Abstract: No abstract text available
Text: ESTABLISHED RELIABILITY INDUCTORS - THRU HOLE ER10M Molded Shielded RF Inductors - Military Approved MIL-PRF-39010/08/09/10 Level R Qualified PART MIL PART L µH Q TEST NUMBER NUMBER MIN FREQ. MHz SRF MHz MIN. DCR OHMS MAX. CURRENT INDUCTANCE RATING TOLERANCE
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ER10M
MIL-PRF-39010/08/09/10
MIL-PRF-39010/08
08BR10KR
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D425G
Abstract: ACT21 SN74BCT2166
Text: SN74BCT2163, SN74BCT2164, SN74BCT2166 16K x 5 CACHE ADDRESS COMPARATORS/TAG RAMs SCHS012-D3513, JUNE 1990-REVISED NOVEMBER 1991 SN74BCT2163, SN74BCT2164 Fast Address to MATCH Delay. 12 ns Max FM PACKAGE CTOP VIEW ’BCT2163 Has Totem-Pole Match Output Q\*~
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SN74BCT2163,
SN74BCT2164,
SN74BCT2166
SCHS012-D3513,
1990-REVISED
BCT2163
BCT2164
BCT2166
D425G
ACT21
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Untitled
Abstract: No abstract text available
Text: SN74ACT2158, SN74ACT2159 8K x 9 CACHE ADDRESS COMPARATORS/DATA RAMs D 3 2 8 1 , M A Y 1 9 9 0 R E V IS E D J U N E 1990 Fast Address to MATCH Delay 22 ns Max FN PACKAGE TOP VIEW 8K x 10 Internal Static RAM ISCI 5 Ä • Word Reset Function for Single Entry
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SN74ACT2158,
SN74ACT2159
ACT2159)
ACT2158)
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Nippon capacitors
Abstract: No abstract text available
Text: HB56U464EJ Series 4,194,304-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-716A Z Rev. 1.0 Jan. 27, 1997 Description The HB56U464EJ belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The
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HB56U464EJ
304-word
64-bit
ADE-203-716A
16-Mbit
HM5116405)
16-bit
74ABT16244)
Nippon capacitors
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mx-k30
Abstract: DAC8143
Text: ANALOG DEVICES 12-Bt Sferial Daisy-Chain MSQAGbmsrter 1X2143 FEATURES Fast, Flexible, Microprocessor Interfacing in Serially Controlled Systems Buffered Digital Output-Pin for Daisy-Chaining M ultiple DACs Minim izes Address-Decoding in M ultiple DAC Systems— Three Wire Interface for Any Number of DACs
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12-bit
16-Lead
mx-k30
DAC8143
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t4sb
Abstract: No abstract text available
Text: liliali M a rc h 1 9 9 4 HM 65790 DATA SHEET 16 K X 4 HIGH SPEED CMOS SRAM SEPARATE I/O FEATURES 300 MILS WIDTH PACKAGE TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS CAPABLE OF WITHSTANDING GREATER THAN 2000 V ELECTROSTATIC DISCHARGE SINGLE 5 VOLT SUPPLY
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65790/R8V
0GD34M3
65790/Rev
t4sb
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M37204M8
Abstract: EPROM 2532A M37204MC-XXXSP M37204MC M37204EC-XXXSP M37204ECSP 10B716 m37204mcxxxsp M37204M8XXXSP M37204
Text: MITSUBISHI MICROCOMPUTERS M37204MC-XXXSP M37204EC-XXXSP, M37204ECSP SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER for VOLTAGE SYNTHESIZER _ and ON-SCREEN DISPLAY CONTROLLER DESCRIPTION PIN CONFIÖURATION TOP VIEW The M37204MC-XXXSP is a single-chip microcomputer designed with
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M37204MC-XXXSP
M37204EC-XXXSP,
M37204ECSP
64-pin
M37204EC-XXXSP
M37204ECSP
4194304-BIT
M37204M8
EPROM 2532A
M37204MC
10B716
m37204mcxxxsp
M37204M8XXXSP
M37204
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CCA612
Abstract: 74BCT2163
Text: SN74BCT2163, SN74BCT2164, SN74BCT2166 16K x 5 CACHE ADDRESS COMPARATORS/TAG RAMs D 3513, JU N E 1990 SN74BCT2163, SN74BCT2164 FM PACKAGE TOP VIEW Fast Address to MATCH Delay 12-ns Max S t I1^ , z C/3 o *it o lS it r o l i r Q Q I II II II II II II—I 'BCT2163 has Totem-Pole Match Output
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SN74BCT2163,
SN74BCT2164,
SN74BCT2166
12-ns
BCT2163
BCT2164
BCT2166
75-pF
BCT2163,
CCA612
74BCT2163
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Untitled
Abstract: No abstract text available
Text: ANALOG DEVICES 1 -/2-/4-Channel Digital Potentiometers AD8400/AD8402/AD8403 FEATURES 256 Position Replaces 1, 2 or 4 Potentiometers 1 k il, 10 k il, 50 k il, 100 k il Power Shut Down—Less than 5 ftA 3-Wire SPI Compatible Serial Data Input 10 MHz Update Data Loading Rate
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AD8400/AD8402/AD8403
AD8400/AD8402/AD8403
24-Pin
SOL-24)
24-Lead
RU-24)
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s6T making
Abstract: HM65768
Text: Tem ic HM 65768B MATRA MHS 4 K X 4 High Speed CMOS SRAM Introduction The HM 65768B is a high speed CMOS static RAM organized as 4096 x 4 bits. It is manufactured using MHS’s high performance CMOS technology. Each memory expansion is provided by an active low chip
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65768b
20pins
-S0j20pins
Sflbfl45tj
s6T making
HM65768
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Untitled
Abstract: No abstract text available
Text: ANALOG DEVICES 2-/4-Channel Digital Potentiometers AD8402/AD8403 FEATURES 256 Position Replaces 2 or 4 Potentiometers 10 k il, 50 k il, 100 k ii Power Shut Down—Less than 5 n-A 3-Wire SPI Compatible Serial Data Input 10 MHz Update Data Loading Rate +2.7 V to +5.5 V Single-Supply Operation
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AD8402/AD8403
AD8402/AD8403
24-Pin
SOL-24)
24-Lead
RU-24)
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Untitled
Abstract: No abstract text available
Text: Tem ic HM 65688A MATRA MHS 16 K x 4 Ultimate CMOS SRAM Introduction The HM 65688A is a very low power CMOS static RAM organised as 16384 x 4 bits. It is manufactured using the MHS high performance CMOS technology named super CMOS. current typical value = 0.1 (lA with a fast access time at
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5688A
5688A
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