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    tc 89101 p

    Abstract: No abstract text available
    Text: CYPRESS SEMICONDUCTOR Features 1024x4 ECL Static RAM • On-chip voltage compensation for im­ proved noise margin • 1024 x 4 —bit organization • Ultra high speed/standard power • Open em itter output for ease o f memory expansion — Ia a = 3 -5 n s


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    CY10E474 CY100E474 1024x4 10E474 10KH/10K 100E474 10E474L--5JC 10E474L--7JC 10E474L--7K tc 89101 p PDF

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    Abstract: No abstract text available
    Text: CY10E474 CY100E474 CYPRESS SEMICONDUCTOR • 1024 x 4 - b it organization • Ultra high speed/standard power — 1 \ \ = 3.5 ns — Iee = 275 mA • Low-power version — Iaa = 5 ns — Iee = 190 mA • Both 10KH/10K- and 100K-compatible I/O versions • 10K/10KH military version


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    CY10E474 CY100E474 10KH/10K- 100K-compatible 10K/10KH CY10E474 CY10E474â CY10E474Lâ PDF

    c4744

    Abstract: 10E474-5K 10E474
    Text: CY10E474 CY100E474 CYPRESS : SEMICONDUCTOR • Features • 1024 x 4-bit organization • Ultra high speed/standard power — = 275 mA — I ce = 190 mA • Both 10KH/10K and 100K com patible I/O versions 10K/10KH M ilitary version • O n-chip voltage com pensation for


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    CY10E474 CY100E474 10KH/10K 10K/10KH 100E474 100Kcom 10E474L-5JC 10E474L-5K 10E474I 10E474L-5 c4744 10E474-5K 10E474 PDF

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    Abstract: No abstract text available
    Text: CY10E474 CY100E474 CYPRESS: SEMICONDUCTOR 1024 x 4 ECL Static RAM Features • Open em itter output for ease of memory expansion • 1024 x 4-bit organization • Industry-standard pinout • Ultra high speed/standard power — t* = 3 ns, t*cs = 2 ns — IEE = 275 mA


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    CY10E474 CY100E474 CY10E474 10KH-/10K- BlocCY10E474-5LC CY10E474-5YC CY10E474-5KC CY10E474I PDF