Untitled
Abstract: No abstract text available
Text: MBRS10H45CTC . MBRS10H200CTC 10.0 Amp. Surface Mount High Temperature Technology Schottky Rectifier Current 10.0 A Voltage 45 to 200 V FEATURES Low leakage current Ideal for automated placement Guardring for overvoltage protection Low power losses, high efficiency
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MBRS10H45CTC
MBRS10H200CTC
2011/65/EU
2002/96/EC
J-STD-020,
O-263AB
mbrs10hctc
Jul-12
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Untitled
Abstract: No abstract text available
Text: MBRS10H100CT thru MBRS10H200CT Taiwan Semiconductor CREAT BY ART FEATURES Dual Common Cathode Schottky Rectifier - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020
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MBRS10H100CT
MBRS10H200CT
J-STD-020
2011/65/EU
2002/96/EC
O-263AB
AEC-Q101
D1309058
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Schottky
Abstract: No abstract text available
Text: MBRF10H100CT thru MBRF10H200CT Taiwan Semiconductor CREAT BY ART FEATURES Dual Common Cathode Schottky Rectifier - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and
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MBRF10H100CT
MBRF10H200CT
E-326243
2011/65/EU
2002/96/EC
ITO-220AB
AEC-Q101
JESD22-B102
D1309015
Schottky
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Schottky
Abstract: MBR10H200CT C0
Text: MBR10H100CT thru MBR10H200CT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and
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MBR10H100CT
MBR10H200CT
2011/65/EU
2002/96/EC
O-220AB
AEC-Q101
JESD22-B102
D1308059
Schottky
MBR10H200CT C0
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Untitled
Abstract: No abstract text available
Text: MBR10H100CT thru MBR10H200CT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and
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MBR10H100CT
MBR10H200CT
2011/65/EU
2002/96/EC
O-220AB
AEC-Q101
22-B102
D1308059
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GMR10H150C
Abstract: GMR10H150CTA3R GMR10H150CTA3T GMR10H150CTB3T TO-263-2
Text: 10H150C HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Power Discrete Description Dual center tap schottky rectifier designed for high frequency Switched Mode Power Supplies. Major Ratings and Characteristics HIGH JUNCTION TEMPERATURE CAPABILITY Values Units 2X5
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GMR10H150C
O-220AB
O-263-2
O-220FPAB
O-263-2
GMR10H150C
GMR10H150CTA3R
GMR10H150CTA3T
GMR10H150CTB3T
TO-263-2
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10A schottky
Abstract: GMR10H150C GMR10H150CTA3R GMR10H150CTA3T GMR10H150CTB3T 10h150c TO-3P Jedec package outline
Text: 10H150C 10A SCHOTTKY RECTIFIER Description Features Dual center tap Schottky rectifier designed for high frequency Switched Mode Power Supplies. High junction temperature capability Good trade off between leakage current and forward voltage drop
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GMR10H150C
220FPAB
220AB
10H150C
10max)
GMR10H150C
O220AB
O220FPAB
10A schottky
GMR10H150CTA3R
GMR10H150CTA3T
GMR10H150CTB3T
10h150c
TO-3P Jedec package outline
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MBR10H200CT
Abstract: 10H150CT MBR10H100CT
Text: MBR10H100CT - MBR10H200CT Pb RoHS 10.0 AMPS. Schottky Barrier Rectifiers COMPLIANCE TO-220AB Features Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency
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MBR10H100CT
MBR10H200CT
O-220AB
O-220AB
MIL-STD-750,
50mVp-p
MBR10H200CT
10H150CT
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10h100c
Abstract: MBRS10H100CT MBRS10H200CT 10H150CT
Text: MBRS10H100CT - MBRS10H200CT Pb RoHS 10.0 AMPS. Surface Mount Schottky Barrier Rectifiers Switchmode Power Rectifiers COMPLIANCE D2PAK Features Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction
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MBRS10H100CT
MBRS10H200CT
MIL-STD-750,
20alf
WIDTH-300
50mVp-p
10h100c
MBRS10H200CT
10H150CT
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Untitled
Abstract: No abstract text available
Text: MBRF10H100CT thru MBRF10H200CT Taiwan Semiconductor CREAT BY ART FEATURES Dual Common Cathode Schottky Rectifier - UL Recognized File # E-326243 - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and
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MBRF10H100CT
MBRF10H200CT
E-326243
2011/65/EU
2002/96/EC
ITO-220AB
AEC-Q101
JESD22-B102
D1309015
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10H150CT
Abstract: No abstract text available
Text: MBRS10H100CT - MBRS10H200CT Pb RoHS 10.0 AMPS. Surface Mount Schottky Barrier Rectifiers Switchmode Power Rectifiers COMPLIANCE D2PAK Features Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction
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MBRS10H100CT
MBRS10H200CT
300us
10H150CT
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Untitled
Abstract: No abstract text available
Text: MBRF10H100CT - MBRF10H200CT Isolated 10.0 AMPS. Schottky Barrier Rectifiers Pb RoHS Switchmode Power Rectifiers COMPLIANCE ITO-220AB Features Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction
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MBRF10H100CT
MBRF10H200CT
ITO-220AB
ITO-220AB
WIDTH-300
50mVp-p
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Untitled
Abstract: No abstract text available
Text: MBRF10H100CT - MBRF10H200CT 10.0AMPS Isolated Schottky Barrier Rectifiers ITO-220AB Features UL Recognized File # E-326243 Plastic material used carriers Underwriters Laboratory Classification 94V-0 Metal silicon junction, majority carrier conduction
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MBRF10H100CT
MBRF10H200CT
ITO-220AB
E-326243
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Untitled
Abstract: No abstract text available
Text: MBRS10H45CTC . MBRS10H200CTC 10.0 Amp. Surface Mount High Temperature Technology Schottky Rectifier Current 10.0 A Voltage 45 to 200 V FEATURES Low leakage current Ideal for automated placement Guardring for overvoltage protection Low power losses, high efficiency
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MBRS10H45CTC
MBRS10H200CTC
O-263AB
AEC-Q101
2011/65/EU
2002/96/EC
J-STD-020,
mbrs10hctc
Jul-12
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D2PAK marking code 300
Abstract: mbrs 10h100ct
Text: MBRS10H100CT - MBRS10H200CT CREAT BY ART 10.0AMPS Surface Mount Schottky Barrier Rectifiers D2PAK Features UL Recognized File # E-326854 Plastic material used carriers Underwriters Laboratory Classification 94V-0 Metal silicon junction, majority carrier conduction
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MBRS10H100CT
MBRS10H200CT
E-326854
D2PAK marking code 300
mbrs 10h100ct
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GMR10H150CTB3T
Abstract: 10H150C GMR10H125C GMR10H150C GMR10H150CTA3R GMR10H150CTA3T
Text: A Power Discrete 10H150C A MICROELECTRONICS HIGH VOLTAGE POWER SCHOTTKY RECTIFIER DESCRIPTION Dual center tap schottky rectifier designed for high frequency Switched Mode Power Supplies. Major Ratings and Characteristics High junction temperature capability
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GMR10H150C
O-220AB
O-263-2
O-220FPAB
O-263-2
GMR10H125C
GMR10H150CTB3T
10H150C
GMR10H125C
GMR10H150C
GMR10H150CTA3R
GMR10H150CTA3T
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MBRS100
Abstract: MBRS100H100CTC
Text: MBRS10H45CTC . MBRS10H200CTC 10.0 Amp. Surface Mount High Temperature Technology Schottky Rectifier Current 10.0 A Voltage 45 to 200 V FEATURES Low leakage current Ideal for automated placement Guardring for overvoltage protection Low power losses, high efficiency
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Original
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MBRS10H45CTC
MBRS10H200CTC
O-263AB
2011/65/EU
2002/96/EC
J-STD-020,
MIL-STD-750
mbrs10hctc
Jul-12
MBRS100
MBRS100H100CTC
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Untitled
Abstract: No abstract text available
Text: MBRF10H100CT - MBRF10H200CT CREAT BY ART 10.0AMPS Isolated Schottky Barrier Rectifiers ITO-220AB Features UL Recognized File # E-326243 Plastic material used carriers Underwriters Laboratory Classification 94V-0 Metal silicon junction, majority carrier conduction
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MBRF10H100CT
MBRF10H200CT
ITO-220AB
E-326243
ITO-220AB
MBRF10HxxCT
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MBRF10H100CT
Abstract: MBRF10H200CT 10H150
Text: MBRF10H100CT - MBRF10H200CT CREAT BY ART Pb 10.0AMPS Isolated Schottky Barrier Rectifiers ITO-220AB RoHS COMPLIANCE Features UL Recognized File # E-326243 Plastic material used carriers Underwriters Laboratory Classification 94V-0 Metal silicon junction, majority carrier conduction
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MBRF10H100CT
MBRF10H200CT
ITO-220AB
E-326243
300uS
MBRF10H200CT
10H150
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MBRS10H100CT
Abstract: MBRS10H200CT E-326854
Text: MBRS10H100CT - MBRS10H200CT CREAT BY ART Pb 10.0AMPS Surface Mount Schottky Barrier Rectifiers D2PAK RoHS COMPLIANCE Features UL Recognized File # E-326854 Plastic material used carriers Underwriters Laboratory Classification 94V-0 Metal silicon junction, majority carrier conduction
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MBRS10H100CT
MBRS10H200CT
E-326854
300uS
MBRS10H200CT
E-326854
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10H150CT
Abstract: 10H150 MBR10H100CT MBR10H200CT CAAF 10H200CT MBR10H200
Text: E TAIWAN SEMICONDUCTOR MBR10H100CT - MBR10H200CT RoHS COMPLIANCE 10.0 AMPS. Schottky Barrier Rectifiers TO-220AB 1 vWvti/t T!T7T7- Features <• <■ <■ <■ «■ <■ Plssiic material used carries Underwriters Laboratory Classifications S4V-0 Metal silicon Junction, ma|orlty carrier conduction
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OCR Scan
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MBR10H100CT
MBR10H200CT
O-220AB
35inm
IF-10A.
12rsc
10H150CT
10H150
MBR10H200CT
CAAF
10H200CT
MBR10H200
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10h100ct
Abstract: 10h100c MBRF10H100CT MBRF10H200CT
Text: [E TAIWAN SEMICONDUC MBRF10H100CT - MBRF10H200CT Isolated 10.0 AMPS. Schottky Barrier Rectifiers RoHS ITO 220AB COMPLIANCE Features -Y- ❖ <> <§• -v- Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction
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OCR Scan
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MBRF10H100CT
MBRF10H200CT
220AB
U0-220AB
MIL-STD-750,
MBRF10H200CT)
10h100ct
10h100c
MBRF10H200CT
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10h100c
Abstract: No abstract text available
Text: s TAIWAN SEMICONDUCTOR MBR10H100CT - MBR10H200CT RoHS 10.0 AMPS. Schottky Barrier Rectifiers T O -2 2 0 A B CO M PLIANCE •V.L7YI TESr&t 1 v*Vn/ì T !T O Features ❖ <■ <■ <■ <■ <■ <■ <■ ❖ <• <f <■ ¿“ iV ¿tu; iîtnj ? HI P ls tiic m a te ria l used c a rrie s Under<7ritars
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OCR Scan
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MBR10H100CT
MBR10H200CT
10H150CT
10H20QCT
30CKI«
10h100c
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1da marking
Abstract: MBR10H100CT MBR10H200CT TV125 MARKING CODE 1DA
Text: TAIWAN SEMICONDUCTOR 5 MBR10H100CT - MBR10H200CT 10.0 AMPS. Schottky Barrier Rectifiers RoHS TO-220AB CO M PLIANCE -nr Features <• <■ <■ Plssiic material used carries Under*ri<era Laboratory Classifications &4V-0 Metal silicon Junction, ma|orlty carrier condutfion
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MBR10H100CT
MBR10H200CT
O-220AB
1da marking
MBR10H200CT
TV125
MARKING CODE 1DA
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