MBR10H200 Search Results

MBR10H200 Price and Stock

Filter by Manufacturer


Taiwan Semiconductor MBR10H200CT DIODE ARR SCHOT 200V 10A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MBR10H200CT	Tube	846		1	1 $1.14 10 $1.14 100 $1.14 1000 $0.39186 10000 $0.333	Buy Now
Avnet Americas	MBR10H200CT	Tube			1,000	1 - 10 - 100 - 1000 $0.30236 10000 $0.30236	Buy Now
Mouser Electronics	MBR10H200CT					1 $0.88 10 $0.726 100 $0.564 1000 $0.367 10000 $0.333	Get Quote
TME	MBR10H200CT				1	1 $0.75 10 $0.596 100 $0.5 1000 $0.464 10000 $0.464	Get Quote
Taiwan Semiconductor MBR10H200CTH DIODE ARR SCHOT 200V 10A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MBR10H200CTH	Tube			1,000	1 - 10 - 100 - 1000 $0.45731 10000 $0.45731	Buy Now
Avnet Americas	MBR10H200CTH	Tube			1,000	1 - 10 - 100 - 1000 $0.36297 10000 $0.36297	Buy Now
Mouser Electronics	MBR10H200CTH					1 $1.06 10 $0.872 100 $0.678 1000 $0.468 10000 $0.4	Get Quote
Taiwan Semiconductor MBR10H200CT C0 - Rail/Tube (Alt: MBR10H200CT C0)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	MBR10H200CT C0	Tube			1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote

MBR10H200 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MBR10H200CT		Taiwan Semiconductor	10.0 AMPS. Schottky Barrier Rectifiers		Original	PDF
MBR10H200CT C0G		Taiwan Semiconductor	Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE SCHOTTKY 200V 10A TO220AB		Original	PDF

MBR10H200 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MBR10H200CT Abstract: MBR10H100CT Text: RATINGS AND CHARACTERISTIC CURVES MBR10H100CT THRU MBR10H200CT Version: E10	Original	PDF	MBR10H100CT MBR10H200CT) MBR10H200CT
Schottky Abstract: MBR10H200CT C0 Text: MBR10H100CT thru MBR10H200CT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and	Original	PDF	MBR10H100CT MBR10H200CT 2011/65/EU 2002/96/EC O-220AB AEC-Q101 JESD22-B102 D1308059 Schottky MBR10H200CT C0
Untitled Abstract: No abstract text available Text: MBR10H100CT thru MBR10H200CT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and	Original	PDF	MBR10H100CT MBR10H200CT 2011/65/EU 2002/96/EC O-220AB AEC-Q101 22-B102 D1308059
MBR10H200CT Abstract: 10H150CT MBR10H100CT Text: MBR10H100CT - MBR10H200CT Pb RoHS 10.0 AMPS. Schottky Barrier Rectifiers COMPLIANCE TO-220AB Features Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency	Original	PDF	MBR10H100CT MBR10H200CT O-220AB O-220AB MIL-STD-750, 50mVp-p MBR10H200CT 10H150CT
Untitled Abstract: No abstract text available Text: MBR10H100CT - MBR10H200CT 10.0AMPS. Schottky Barrier Rectifiers TO-220AB Features Plastic material used carriers Underwriters Laboratory Classification 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop	Original	PDF	MBR10H100CT MBR10H200CT O-220AB O-220AB
MBR10H100CT Abstract: No abstract text available Text: MBR10H100CT - MBR10H200CT CREAT BY ART 10.0AMPS. Schottky Barrier Rectifiers TO-220AB Features Plastic material used carriers Underwriters Laboratory Classification 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency	Original	PDF	MBR10H100CT MBR10H200CT O-220AB O-220AB MIL-STD-750, MBR10HxxCT
Untitled Abstract: No abstract text available Text: MBR10H100CT thru MBR10H200CT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and	Original	PDF	MBR10H100CT MBR10H200CT 2011/65/EU 2002/96/EC O-220AB AEC-Q101 22-B102 D1308059
10H150CT Abstract: 10H200CT Text: MBR10H100CT - MBR10H200CT CREAT BY ART Pb 10.0AMPS. Schottky Barrier Rectifiers TO-220AB RoHS COMPLIANCE Features Plastic material used carriers Underwriters Laboratory Classification 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency	Original	PDF	MBR10H100CT MBR10H200CT O-220AB O-220AB 300uS 50mVp-p 10H150CT 10H200CT
Untitled Abstract: No abstract text available Text: MBR10H100CT - MBR10H200CT CREAT BY ART 10.0AMPS. Schottky Barrier Rectifiers TO-220AB Features Plastic material used carriers Underwriters Laboratory Classification 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency	Original	PDF	MBR10H100CT MBR10H200CT O-220AB O-220AB
10H150CT Abstract: No abstract text available Text: MBR10H100CT - MBR10H200CT Pb RoHS COMPLIANCE 10.0 AMPS. Schottky Barrier Rectifiers Switchmode Power Rectifiers TO-220AB Features Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction	Original	PDF	MBR10H100CT MBR10H200CT O-220AB O-220AB MIL-STD-750, 50mVp-p 10H150CT
10H150CT Abstract: MBR10H100CT Text: MBR10H100CT - MBR10H200CT CREAT BY ART 10.0AMPS. Schottky Barrier Rectifiers TO-220AB Features Plastic material used carriers Underwriters Laboratory Classification 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency	Original	PDF	MBR10H100CT MBR10H200CT O-220AB O-220AB MIL-STD-750, MBR10HxxCT 10H150CT
irfb4115 Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	Original	PDF	element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
10H150CT Abstract: 10H150 MBR10H100CT MBR10H200CT CAAF 10H200CT MBR10H200 Text: E TAIWAN SEMICONDUCTOR MBR10H100CT - MBR10H200CT RoHS COMPLIANCE 10.0 AMPS. Schottky Barrier Rectifiers TO-220AB 1 vWvti/t T!T7T7- Features <• <■ <■ <■ «■ <■ Plssiic material used carries Underwriters Laboratory Classifications S4V-0 Metal silicon Junction, ma\|orlty carrier conduction	OCR Scan	PDF	MBR10H100CT MBR10H200CT O-220AB 35inm IF-10A. 12rsc 10H150CT 10H150 MBR10H200CT CAAF 10H200CT MBR10H200
10h100c Abstract: No abstract text available Text: s TAIWAN SEMICONDUCTOR MBR10H100CT - MBR10H200CT RoHS 10.0 AMPS. Schottky Barrier Rectifiers T O -2 2 0 A B CO M PLIANCE •V.L7YI TESr&t 1 v*Vn/ì T !T O Features ❖ <■ <■ <■ <■ <■ <■ <■ ❖ <• <f <■ ¿“ iV ¿tu; iîtnj ? HI P ls tiic m a te ria l used c a rrie s Under<7ritars	OCR Scan	PDF	MBR10H100CT MBR10H200CT 10H150CT 10H20QCT 30CKI« 10h100c