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    10S2C Search Results

    10S2C Result Highlights (1)

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    HLW10S-2C7LF Amphenol Communications Solutions 1.00mm Flex Connectors, HLW-S series, 10 Position, Top Entry Non-ZIF Connector, 1mm (0.039inch) Pitch, Kinked Terminal Visit Amphenol Communications Solutions
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    10S2C Price and Stock

    Amphenol Communications Solutions HLW10S-2C7LF

    CONN FFC FPC VERT 10POS 1MM PCB
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    DigiKey HLW10S-2C7LF Tray 13,217 1
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    • 10 $0.164
    • 100 $0.124
    • 1000 $0.09746
    • 10000 $0.08677
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    Newark HLW10S-2C7LF Bulk 5,174 1
    • 1 $0.09
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    • 100 $0.082
    • 1000 $0.076
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    Master Electronics HLW10S-2C7LF 23,784
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    • 1000 $0.0899
    • 10000 $0.069
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    Hirose Electric Co Ltd DF3-10S-2C

    CONN RCPT HSG 10POS 2.00MM
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    DigiKey DF3-10S-2C Bag 1,587 1
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    Mouser Electronics DF3-10S-2C 5,569
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    • 1000 $0.096
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    Newark DF3-10S-2C Bulk 100
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    • 1000 $0.097
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    TME DF3-10S-2C 287 1
    • 1 $0.216
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    • 100 $0.09
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    • 10000 $0.065
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    Interstate Connecting Components DF3-10S-2C 2,213
    • 1 $0.106
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    Avnet Abacus DF3-10S-2C 14 Weeks 100
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    Chip1Stop DF3-10S-2C Bulk 150
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    Sager DF3-10S-2C 100
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    Hirose Electric Co Ltd A4B-10S-2C

    CONN RCPT HSG 10POS 2.00MM
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    DigiKey A4B-10S-2C Bulk 100
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    Avnet Americas A4B-10S-2C Bag 12 Weeks 100
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    Mouser Electronics A4B-10S-2C
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    Newark A4B-10S-2C Bulk 100
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    TME A4B-10S-2C 100
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    Chip1Stop A4B-10S-2C Bulk 225
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    Sager A4B-10S-2C 1
    • 1 $0.4
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    TT electronics / BI Technologies P166V10S2CA503

    PANEL ROTARY POTENTIOMETER
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    DigiKey P166V10S2CA503 Tray 4,800
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    Sager P166V10S2CA503 1,600
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    TT electronics / BI Technologies P166V10S2CC204

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    DigiKey P166V10S2CC204 Tray 4,800
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    Sager P166V10S2CC204 1,600
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    10S2C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AMK107BJ106MA

    Abstract: No abstract text available
    Text: Multi Layer Ceramic Capacitor -Electrical Characteristics Data- 10S2C08 RoHS compliance product ○AMK107BJ106MA 1000 Capacitance[uF] . 4V 1608 X5R 10uF +/-20% t=0.9mmMAX 4V 0603 X5R 10uF +/-20% t=0.035inchMAX AMK107BJ106MA Capacitance Freq. 100 10 1 0.001


    Original     		PDF 10S2C08 AMK107BJ106MA 035inchMAX AMK107BJ106MA

    AWK107C6475MV

    Abstract: No abstract text available
    Text: Multi Layer Ceramic Capacitor -Electrical Characteristics Data- 10S2C09 RoHS compliance product ○AWK107C6475MV 4V 0816 X6S 4.7uF +/-20% t=0.55mmMAX 4V 0306 X6S 4.7uF +/-20% t=0.022inchMAX AWK107C6475MV DC Bias Char. 20 AWK107C6475MV Capacitance Freq. 1000


    Original     		PDF 10S2C09 AWK107C6475MV 55mmMAX 022inchMAX AWK107C6475MV

    AMK105BJ335MV

    Abstract: No abstract text available
    Text: Multi Layer Ceramic Capacitor -Electrical Characteristics Data- 10S2C08O RoHS compliance product ○AMK105BJ335MV 4V 1005 X5R 3.3uF +/-20% t=0.55mmMAX 4V 0402 X5R 3.3uF +/-20% t=0.022inchMAX AMK105BJ335MV DC Bias Char. 20 AMK105BJ335MV Capacitance Freq. 1000


    Original     		PDF 10S2C08O AMK105BJ335MV 55mmMAX 022inchMAX AMK105BJ335MV

    AMK063BJ474MP

    Abstract: ceramic capacitor 0201 1 uf
    Text: Multi Layer Ceramic Capacitor -Electrical Characteristics Data- 10S2C08O RoHS compliance product ○AMK063BJ474MP 4V 0603 X5R 0.47uF +/-20% t=0.33mmMAX 4V 0201 X5R 0.47uF +/-20% t=0.013inchMAX AMK063BJ474MP DC Bias Char. 20 AMK063BJ474MP Capacitance Freq.


    Original     		PDF 10S2C08O AMK063BJ474MP 33mmMAX 013inchMAX AMK063BJ474MP ceramic capacitor 0201 1 uf

    AMK063BJ224MP

    Abstract: ceramic capacitor 0201 1 uf
    Text: Multi Layer Ceramic Capacitor -Electrical Characteristics Data- 10S2C08 RoHS compliance product ○AMK063BJ224MP 4V 0603 X5R 0.22uF +/-20% t=0.33mmMAX 4V 0201 X5R 0.22uF +/-20% t=0.013inchMAX AMK063BJ224MP DC Bias Char. 20 AMK063BJ224MP Capacitance Freq. 100


    Original     		PDF 10S2C08 AMK063BJ224MP 33mmMAX 013inchMAX AMK063BJ224MP ceramic capacitor 0201 1 uf

    JWK105BJ105MP

    Abstract: No abstract text available
    Text: Multi Layer Ceramic Capacitor -Electrical Characteristics Data- 10S2C09O RoHS compliance product ○JWK105BJ105MP 6.3V 0510 X5R 1uF +/-20% t=0.35mmMAX 6.3V 0204 X5R 1uF +/-20% t=0.014inchMAX JWK105BJ105MP DC Bias Char. 20 JWK105BJ105MP Capacitance Freq. 1000


    Original     		PDF 10S2C09O JWK105BJ105MP 35mmMAX 014inchMAX JWK105BJ105MP

    AWK105C6105MP

    Abstract: No abstract text available
    Text: Multi Layer Ceramic Capacitor -Electrical Characteristics Data- 10S2C09O RoHS compliance product ○AWK105C6105MP 4V 0510 X6S 1uF +/-20% t=0.35mmMAX 4V 0204 X6S 1uF +/-20% t=0.014inchMAX AWK105C6105MP Capacitance Freq. AWK105C6105MP DC Bias Char. 20 1000 10


    Original     		PDF 10S2C09O AWK105C6105MP 35mmMAX 014inchMAX AWK105C6105MP

    JWK107BJ475MV

    Abstract: No abstract text available
    Text: Multi Layer Ceramic Capacitor -Electrical Characteristics Data- 10S2C09 RoHS compliance product ○JWK107BJ475MV 6.3V 0816 X5R 4.7uF +/-20% t=0.55mmMAX 6.3V 0306 X5R 4.7uF +/-20% t=0.022inchMAX JWK107BJ475MV DC Bias Char. 20 JWK107BJ475MV Capacitance Freq.


    Original     		PDF 10S2C09 JWK107BJ475MV 55mmMAX 022inchMAX JWK107BJ475MV

    AMK105ABJ475MV

    Abstract: No abstract text available
    Text: Multi Layer Ceramic Capacitor -Electrical Characteristics Data- 10S2C08O RoHS compliance product ○AMK105ABJ475MV 4V 1005 X5R 4.7uF +/-20% t=0.6mmMAX 4V 0402 X5R 4.7uF +/-20% t=0.024inchMAX AMK105ABJ475MV DC Bias Char. 20 AMK105ABJ475MV Capacitance Freq.


    Original     		PDF 10S2C08O AMK105ABJ475MV 024inchMAX AMK105ABJ475MV

    AMK063BJ334MP

    Abstract: ceramic capacitor 0201 1 uf ceramic capacitor 0.33UF
    Text: Multi Layer Ceramic Capacitor -Electrical Characteristics Data- 10S2C08 RoHS compliance product ○AMK063BJ334MP 4V 0603 X5R 0.33uF +/-20% t=0.33mmMAX 4V 0201 X5R 0.33uF +/-20% t=0.013inchMAX AMK063BJ334MP DC Bias Char. 20 AMK063BJ334MP Capacitance Freq. 100


    Original     		PDF 10S2C08 AMK063BJ334MP 33mmMAX 013inchMAX AMK063BJ334MP ceramic capacitor 0201 1 uf ceramic capacitor 0.33UF

    Untitled

    Abstract: No abstract text available
    Text: GT25G101 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101(SM) Unit: mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 170A) Enhancement−Mode 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C)


    Original     		PDF GT25G101 10S2C

    GT20G101

    Abstract: No abstract text available
    Text: GT20G101 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT20G101(SM) Unit: mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 130A) Enhancement−Mode 20V Gate Drive MAXIMUM RATINGS (Ta = 25°C)


    Original     		PDF GT20G101 2-10S2C

    GT5J311

    Abstract: No abstract text available
    Text: GT5J311,GT5J311 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT5J311,GT5J311(SM) Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS l The 3rd Generation l Enhancement−Mode l High Speed : tf = 0.30µs (Max.) (IC = 5A)


    Original     		PDF GT5J311

    5j311

    Abstract: GT5J311 marking code SM diode
    Text: GT5J311,GT5J311 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT5J311, GT5J311(SM) Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed : tf = 0.30µs (Max.) (IC = 5A)


    Original     		PDF GT5J311 GT5J311, 5j311 marking code SM diode

    Untitled

    Abstract: No abstract text available
    Text: GT5J311,GT5J311 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT TENTATIVE GT5J311,GT5J311(SM) Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs (Max.) (IC = 5A)


    Original     		PDF GT5J311

    Untitled

    Abstract: No abstract text available
    Text: GT25G101 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101(SM) Unit: mm STROBE FLASH APPLICATIONS z High Input Impedance z Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 170A) z Enhancement−Mode z 12V Gate Drive ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)


    Original     		PDF GT25G101 2-10S2C

    10j312

    Abstract: GENERAL SEMICONDUCTOR MARKING SM
    Text: GT10J312,GT10J312 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J312, GT10J312(SM) HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm z Third-generation IGBT z Enhancement mode type z High speed : tf = 0.30µs (Max.)


    Original     		PDF GT10J312 GT10J312, 10j312 GENERAL SEMICONDUCTOR MARKING SM

    GT10J312

    Abstract: No abstract text available
    Text: GT10J312,GT10J312 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J312,GT10J312(SM) Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs (Max.) Low Saturation Voltage


    Original     		PDF GT10J312

    TRANSISTOR S2A

    Abstract: 2S2A s2a mosfet TRANSISTOR Y 330 TE24L s2a transistor 10D2A 12D2A
    Text: Transistor Outline Package Surface Mount Type TO-220SM パッケージ エンボス方式テーピング寸法 (TE24L) テープ形状および寸法 単位 : mm 12.0 ±0.1 φ1.5 +0.1 –0.0 Y 4.0 ±0.1 1.75 ±0.1 2.0 ±0.1 0.4 ±0.05 13.9 φ2.0 ±0.1 24.0 ±0.3


    Original     		PDF O-220SM TE24L) 10S2A 10S2B 10D2A 10S2C 220SM TE24L TRANSISTOR S2A 2S2A s2a mosfet TRANSISTOR Y 330 TE24L s2a transistor 10D2A 12D2A

    gt25g101

    Abstract: No abstract text available
    Text: GT25G101 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101(SM) Unit: mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 170A) Enhancement−Mode 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C)


    Original     		PDF GT25G101 2-10S2C

    GT25G101

    Abstract: No abstract text available
    Text: GT25G101 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101(SM) Unit: mm STROBE FLASH APPLICATIONS z High Input Impedance z Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 170A) z Enhancement−Mode z 12V Gate Drive ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)


    Original     		PDF GT25G101 2-10S2C

    GT20G102

    Abstract: No abstract text available
    Text: GT20G102 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT20G102(SM) Unit: mm STROBE FLASH APPLICATIONS l High Input Impedance l Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 130A) l Enhancement−Mode l 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C)


    Original     		PDF GT20G102 2-10S2C

    10j312

    Abstract: GT10J312 marking code SM diode
    Text: GT10J312,GT10J312 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J312, GT10J312(SM) HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm Third-generation IGBT Enhancement mode type High speed : tf = 0.30µs (Max.)


    Original     		PDF GT10J312 GT10J312, 10j312 marking code SM diode

    fci dh 22

    Abstract: JSA93382 HLW25R-2C7LF 6R2C HLW22R-2C7LF HLW31R-2C7LF JSA93626 HLW23S-2C7 1J23 HLW11S-2C7LF
    Text: REVISIONS D E S C R IP T IO N REV A ECN BY D A TE J05-027 0 H.T 5/10/'05 RFI .EA SED CAT. NO. & DIMENSIONS ND. DF CONTACTS n DIMENSIONS (NOTED CAT. ND. RIGHT ANGLE TYPE A 1 0.3 STRAIGHT TYPE B C 4 HLW 4R-2C7LF HLW 4S-2C7LF 6.6 5.12 5 HLW 5R-2C7LF HLW 5S-2C7LF


    OCR Scan     		PDF J05-0270 10R-2C7LF 10S-2C7LF HLW11R-2C7LF HLW11S-2C7LF HLW12R-2C7LF HLW12S-2C7LF HLW13R-2C7LF HLW13S-2C7LF HLW14R-2C7LF fci dh 22 JSA93382 HLW25R-2C7LF 6R2C HLW22R-2C7LF HLW31R-2C7LF JSA93626 HLW23S-2C7 1J23