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    Untitled

    Abstract: No abstract text available
    Text: TK80F06K3L MOSFETs Silicon N-channel MOS U-MOS TK80F06K3L 1. Applications • Automotive • Switching Voltage Regulators • DC-DC Converters • Motor Drivers 2. Features (1) Low drain-source on-resistance: RDS(ON) = 6.2 mΩ (typ.) (VGS = 10 V) (2)


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    TK80F06K3L O-220SM PDF

    Untitled

    Abstract: No abstract text available
    Text: TJ150F04M3L MOSFETs Silicon P-Channel MOS U-MOS TJ150F04M3L 1. Applications • Automotive • Relay Drivers • DC-DC Converters • Motor Drivers 2. Features (1) Low drain-source on-resistance: RDS(ON) = 2.2 mΩ (typ.) (VGS = -10 V) (2) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V)


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    TJ150F04M3L O-220SM PDF

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    Abstract: No abstract text available
    Text: TK100F04K3L MOSFETs Silicon N-channel MOS U-MOS TK100F04K3L 1. Applications • Switching Voltage Regulators • DC-DC Converters • Motor Drivers 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 2.5 mΩ (typ.) (VGS = 10 V)


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    TK100F04K3L AEC-Q101 O-220SM PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    Untitled

    Abstract: No abstract text available
    Text: TJ100F06M3L MOSFETs Silicon P-Channel MOS U-MOS TJ100F06M3L 1. Applications • Automotive • Relay Drivers • DC-DC Converters • Motor Drivers 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 5.6 mΩ (typ.) (VGS = -10 V)


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    TJ100F06M3L AEC-Q101 O-220SM PDF

    K100F06K

    Abstract: TK100 TK100F06K3
    Text: TK100F06K3 東芝電界効果トランジスタ シリコンNチャネルMOS形 U-MOSIV TK100F06K3 ○ スイッチングレギュレータDC-DC コンバータ用 ○ モータドライブ用 • 取り扱いが簡単なエンハンスメントタイプです。


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    TK100F06K3 K100F06K TK100 TK100F06K3 PDF

    SCJ0004N

    Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
    Text: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード


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    SCJ0004N TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 SCJ0004N JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT PDF

    2SK3404

    Abstract: 2SK3404-Z MP-25 MP-25Z M2SK3404
    Text: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor 2SK3404 N チャネル パワーMOS FET スイッチング用 工業用 2SK3404 は,N チャネル MOS FET でオン抵抗が低く,スイッチング特性が優れており,同期整流方式 DC/DC コンバー


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    2SK3404 2SK3404 O-220AB 2SK3404-Z O-220SMD D14638JJ2V0DS00 D14638JJ2V0DS 2SK3404-Z MP-25 MP-25Z M2SK3404 PDF

    circuit diagram of luminous inverter

    Abstract: TC7600FNG Sine wave PWM DC to AC Inverter ics 3 phase inverter 180 degree conduction mode wave circuit diagram of toshiba washing machine ULN2003APG 3 phase inverter 150 degree conduction mode wave 3 phase motor soft starter igbt circuit diagram microwave cooking circuit diagram TB6584FNG
    Text: 2009-9 SYSTEM CATALOG Home Appliances SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng Induction Rice Cookers Refrigerators Air Conditioners Automatic Washing Machines Dishwashers •CONTENTS Characteristics of Motor Control Devices Overview of Toshiba’s Semiconductor Devices for Home Appliances


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    BCE0013C circuit diagram of luminous inverter TC7600FNG Sine wave PWM DC to AC Inverter ics 3 phase inverter 180 degree conduction mode wave circuit diagram of toshiba washing machine ULN2003APG 3 phase inverter 150 degree conduction mode wave 3 phase motor soft starter igbt circuit diagram microwave cooking circuit diagram TB6584FNG PDF

    CMG07

    Abstract: 10lc48 CMG08 CMG03 CRH02 CRG01 CRG02 CRS14 CRS15 TPC6K01
    Text: 製品カタログ 2009-3 東芝半導体 製品カタログ ダイオード 中小型編 SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 1. ダイオード体系図 . 3


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    12-10C1A 12-16D1A 12-16E1A BCJ0001H BCJ0001G CMG07 10lc48 CMG08 CMG03 CRH02 CRG01 CRG02 CRS14 CRS15 TPC6K01 PDF

    Untitled

    Abstract: No abstract text available
    Text: TJ100F04M3L MOSFET シリコンPチャネルMOS形 U-MOS TJ100F04M3L 1. 用途 • 車載用 • リレー駆動用 • DC-DCコンバータ用 • モータドライブ用 2. 特長 (1) オン抵抗が低い。: RDS(ON) = 2.8 mΩ (標準) (VGS = -10 V)


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    TJ100F04M3L O-220SM PDF

    d1413

    Abstract: 2SK3353 2SK3353-S 2SK3353-Z 2SK3353-ZJ MP-25 MP-25Z
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3353 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3353 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3353 TO-220AB designed for high current switching applications.


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    2SK3353 2SK3353 O-220AB 2SK3353-S 2SK3353-ZJ O-263 O-262 2SK3353-Z O-220SMD d1413 2SK3353-S 2SK3353-Z 2SK3353-ZJ MP-25 MP-25Z PDF

    5252 F 1009 4-pin

    Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
    Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


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    Variable Capacitance Diodes

    Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
    Text: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A


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    TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG02 CRG01 CRG04 CMG06 Variable Capacitance Diodes 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24 PDF

    2SK1928

    Abstract: No abstract text available
    Text: TOSHIBA 2SK1928 Field Effect Transistor Industrial Applications Unit in mm Silicon N Channel MOS Type rc-MOS II h iZ . High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance - RiD S (O N ) = 0.7Q [Typ.) • High Forward Transfer Admittance


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    2SK1928 ij100A/MS 2SK1928 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SK2376 T O S H IB A FIELD EFFECT TRA N SISTO R SILICON N C H A N N EL M O S T Y PE L2-tt- M O S V 2SK2376 HIGH SPEED , HIGH C U RREN T SW IT C H IN G A PPLIC A TIO N S INDUSTRIAL APPLICATIONS Unit in m m TO-22QFL C H O PPER REG U LA TO R, DC-DC C O N V ER T ER A N D M O T O R DRIVE


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    2SK2376 O-22QFL 20kil) PDF

    2SK2235

    Abstract: DDS3400 44t transistor DDS34
    Text: TOSHIBA TDTTSSO DDS 3 4 0 0 TOSHIBA FIELD EFFECT TRANSISTOR 2SK2235 35b SILICON N CHANNEL MOS TYPE tt-M OSIII 5 2SK2235 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AN D MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm


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    DDS3400 2SK2235 300juA 20kfi) O-22QAB O-220 50URCE O-220FL 00E3b43 44t transistor DDS34 PDF

    2SJ241

    Abstract: No abstract text available
    Text: TOSHIBA Discrete Semiconductors 2SJ241 Field Effect Transistor Industrial Applications TQ-220FL Silicon P Channel MOS Type Unit in mm L2-tc-MOS IV High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt G ate Drive


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    2SJ241 0D2157L, PDF

    2SK2320

    Abstract: QK SOT89
    Text: TOSHIBA tì a t17ESD 0 0 2 3 4 2 b T O S H IB A F IE L D EFFECT T R A N S IS T O R 2SK2320 bb 2 S IL IC O N N C H A N N E L M O S T Y P E / r - M O S I I 5 2SK2320 H IG H SPEED , H IG H C U R R E N T S W IT C H IN G A P P L IC A T IO N S . C H O P P E R R E G U L A T O R , D C -D C C O N V E R T E R A N D M O T O R D R IV E


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    002342b 2SK2320 100/uA O-22QAB O-220 50URCE O-220FL 00E3b43 O-220SM QK SOT89 PDF

    2SJ402

    Abstract: No abstract text available
    Text: TOSHIBA 2SJ402 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOSV 2SJ402 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in m m TO-220FL DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS 10.3M A X


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    2SJ402 O-220FL PDF

    2SK2146

    Abstract: H1 SOT-89
    Text: TOSHIBA • ^ 7 2 5 0 0Q2337D f l ^ T O S H IB A FIELD EFFECT T R A N S IS T O R 2SK2146 SILIC O N N C H A N N E L M O S T Y P E 2 S K 2 1 46 H IG H S PEED , HIGH C U R R E N T S W IT C H IN G A P P L IC A T IO N S C H O P P E R R E G U L A T O R , DC-DC C O N V E R T E R A N D M O T O R D R IV E


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    2337D 2SK2146 20kfi) O-22QAB O-220 50URCE O-220FL 00E3b43 O-220SM H1 SOT-89 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA Discrete Semiconductors 2SK1792 Industrial Applications TO-22QFL Field Effect Transistor 2 Unit in mm Silicon N Channel MOSType L -ti-MOS IV 10.3 MAX 1 ,3 2 ^ - 5r " High Speed Switching, DC-DC Converter, Relay Drive, Motor Drive Applications Features


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    2SK1792 O-22QFL 100nA PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TQC17ESQ 0 0 2 3 3 4 4 7T7 TO SH IBA FIELD EFFECT TRANSISTOR 2SK1721 SILICON N CHANNEL M OS TYPE ff- M O SII 2 S K 1 721 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. TO-220FL U n it in mm DC-DC CONVERTER AND M OTOR DRIVE APPLICATIONS. • Low Drain-Source O N Resistance


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    17ESQ 2SK1721 O-220FL 0023b43 O-220SM PDF

    Untitled

    Abstract: No abstract text available
    Text: TDTTSSD 0023311 250 TOSHIBA TO SH IBA FIELD EFFECT TRANSISTOR 2SK1530 SILICON N C H ANN EL M O S TYPE 2 S K 1 530 HIGH POW ER AMPLIFIER APPLICATION • • • U nit in mm High Breakdown Voltage : V j gg = 200V High Forward Transfer Admittance : |Yfs| = 5.0S Typ.)


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    2SK1530 2SJ201 2-21F1B O-220SM PDF