Untitled
Abstract: No abstract text available
Text: TK80F06K3L MOSFETs Silicon N-channel MOS U-MOS TK80F06K3L 1. Applications • Automotive • Switching Voltage Regulators • DC-DC Converters • Motor Drivers 2. Features (1) Low drain-source on-resistance: RDS(ON) = 6.2 mΩ (typ.) (VGS = 10 V) (2)
|
Original
|
TK80F06K3L
O-220SM
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TJ150F04M3L MOSFETs Silicon P-Channel MOS U-MOS TJ150F04M3L 1. Applications • Automotive • Relay Drivers • DC-DC Converters • Motor Drivers 2. Features (1) Low drain-source on-resistance: RDS(ON) = 2.2 mΩ (typ.) (VGS = -10 V) (2) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V)
|
Original
|
TJ150F04M3L
O-220SM
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TK100F04K3L MOSFETs Silicon N-channel MOS U-MOS TK100F04K3L 1. Applications • Switching Voltage Regulators • DC-DC Converters • Motor Drivers 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 2.5 mΩ (typ.) (VGS = 10 V)
|
Original
|
TK100F04K3L
AEC-Q101
O-220SM
|
PDF
|
Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TJ100F06M3L MOSFETs Silicon P-Channel MOS U-MOS TJ100F06M3L 1. Applications • Automotive • Relay Drivers • DC-DC Converters • Motor Drivers 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 5.6 mΩ (typ.) (VGS = -10 V)
|
Original
|
TJ100F06M3L
AEC-Q101
O-220SM
|
PDF
|
K100F06K
Abstract: TK100 TK100F06K3
Text: TK100F06K3 東芝電界効果トランジスタ シリコンNチャネルMOS形 U-MOSIV TK100F06K3 ○ スイッチングレギュレータDC-DC コンバータ用 ○ モータドライブ用 • 取り扱いが簡単なエンハンスメントタイプです。
|
Original
|
TK100F06K3
K100F06K
TK100
TK100F06K3
|
PDF
|
SCJ0004N
Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
Text: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード
|
Original
|
SCJ0004N
TPC6K01
HMG01
CRG02
CRG07
CRG03
CMG05
CMG07
CMG02
CRG01
SCJ0004N
JDV2S71E
DF2S6.8UFS
015AZ3.3
1ss421
CMG07
CMZ24
CRS06
DF2S5.6SC
DF3S6.8ECT
|
PDF
|
2SK3404
Abstract: 2SK3404-Z MP-25 MP-25Z M2SK3404
Text: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor 2SK3404 N チャネル パワーMOS FET スイッチング用 工業用 2SK3404 は,N チャネル MOS FET でオン抵抗が低く,スイッチング特性が優れており,同期整流方式 DC/DC コンバー
|
Original
|
2SK3404
2SK3404
O-220AB
2SK3404-Z
O-220SMD
D14638JJ2V0DS00
D14638JJ2V0DS
2SK3404-Z
MP-25
MP-25Z
M2SK3404
|
PDF
|
circuit diagram of luminous inverter
Abstract: TC7600FNG Sine wave PWM DC to AC Inverter ics 3 phase inverter 180 degree conduction mode wave circuit diagram of toshiba washing machine ULN2003APG 3 phase inverter 150 degree conduction mode wave 3 phase motor soft starter igbt circuit diagram microwave cooking circuit diagram TB6584FNG
Text: 2009-9 SYSTEM CATALOG Home Appliances SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng Induction Rice Cookers Refrigerators Air Conditioners Automatic Washing Machines Dishwashers •CONTENTS Characteristics of Motor Control Devices Overview of Toshiba’s Semiconductor Devices for Home Appliances
|
Original
|
BCE0013C
circuit diagram of luminous inverter
TC7600FNG
Sine wave PWM DC to AC Inverter ics
3 phase inverter 180 degree conduction mode wave
circuit diagram of toshiba washing machine
ULN2003APG
3 phase inverter 150 degree conduction mode wave
3 phase motor soft starter igbt circuit diagram
microwave cooking circuit diagram
TB6584FNG
|
PDF
|
CMG07
Abstract: 10lc48 CMG08 CMG03 CRH02 CRG01 CRG02 CRS14 CRS15 TPC6K01
Text: 製品カタログ 2009-3 東芝半導体 製品カタログ ダイオード 中小型編 SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 1. ダイオード体系図 . 3
|
Original
|
12-10C1A
12-16D1A
12-16E1A
BCJ0001H
BCJ0001G
CMG07
10lc48
CMG08
CMG03
CRH02
CRG01
CRG02
CRS14
CRS15
TPC6K01
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TJ100F04M3L MOSFET シリコンPチャネルMOS形 U-MOS TJ100F04M3L 1. 用途 • 車載用 • リレー駆動用 • DC-DCコンバータ用 • モータドライブ用 2. 特長 (1) オン抵抗が低い。: RDS(ON) = 2.8 mΩ (標準) (VGS = -10 V)
|
Original
|
TJ100F04M3L
O-220SM
|
PDF
|
d1413
Abstract: 2SK3353 2SK3353-S 2SK3353-Z 2SK3353-ZJ MP-25 MP-25Z
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3353 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3353 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3353 TO-220AB designed for high current switching applications.
|
Original
|
2SK3353
2SK3353
O-220AB
2SK3353-S
2SK3353-ZJ
O-263
O-262
2SK3353-Z
O-220SMD
d1413
2SK3353-S
2SK3353-Z
2SK3353-ZJ
MP-25
MP-25Z
|
PDF
|
5252 F 1009 4-pin
Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4
|
Original
|
|
PDF
|
Variable Capacitance Diodes
Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
Text: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A
|
Original
|
TPC6K01
HMG01
CRG02
CRG07
CRG03
CMG05
CMG02
CRG01
CRG04
CMG06
Variable Capacitance Diodes
1SV283B
2fu smd transistor
bidirectional zener diode
015DZ4
015AZ15
CRS06
smd diode Lz zener
general purpose zener diode 256
CMZ24
|
PDF
|
|
2SK1928
Abstract: No abstract text available
Text: TOSHIBA 2SK1928 Field Effect Transistor Industrial Applications Unit in mm Silicon N Channel MOS Type rc-MOS II h iZ . High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance - RiD S (O N ) = 0.7Q [Typ.) • High Forward Transfer Admittance
|
OCR Scan
|
2SK1928
ij100A/MS
2SK1928
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SK2376 T O S H IB A FIELD EFFECT TRA N SISTO R SILICON N C H A N N EL M O S T Y PE L2-tt- M O S V 2SK2376 HIGH SPEED , HIGH C U RREN T SW IT C H IN G A PPLIC A TIO N S INDUSTRIAL APPLICATIONS Unit in m m TO-22QFL C H O PPER REG U LA TO R, DC-DC C O N V ER T ER A N D M O T O R DRIVE
|
OCR Scan
|
2SK2376
O-22QFL
20kil)
|
PDF
|
2SK2235
Abstract: DDS3400 44t transistor DDS34
Text: TOSHIBA TDTTSSO DDS 3 4 0 0 TOSHIBA FIELD EFFECT TRANSISTOR 2SK2235 35b SILICON N CHANNEL MOS TYPE tt-M OSIII 5 2SK2235 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AN D MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm
|
OCR Scan
|
DDS3400
2SK2235
300juA
20kfi)
O-22QAB
O-220
50URCE
O-220FL
00E3b43
44t transistor
DDS34
|
PDF
|
2SJ241
Abstract: No abstract text available
Text: TOSHIBA Discrete Semiconductors 2SJ241 Field Effect Transistor Industrial Applications TQ-220FL Silicon P Channel MOS Type Unit in mm L2-tc-MOS IV High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt G ate Drive
|
OCR Scan
|
2SJ241
0D2157L,
|
PDF
|
2SK2320
Abstract: QK SOT89
Text: TOSHIBA tì a t17ESD 0 0 2 3 4 2 b T O S H IB A F IE L D EFFECT T R A N S IS T O R 2SK2320 bb 2 S IL IC O N N C H A N N E L M O S T Y P E / r - M O S I I 5 2SK2320 H IG H SPEED , H IG H C U R R E N T S W IT C H IN G A P P L IC A T IO N S . C H O P P E R R E G U L A T O R , D C -D C C O N V E R T E R A N D M O T O R D R IV E
|
OCR Scan
|
002342b
2SK2320
100/uA
O-22QAB
O-220
50URCE
O-220FL
00E3b43
O-220SM
QK SOT89
|
PDF
|
2SJ402
Abstract: No abstract text available
Text: TOSHIBA 2SJ402 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOSV 2SJ402 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in m m TO-220FL DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS 10.3M A X
|
OCR Scan
|
2SJ402
O-220FL
|
PDF
|
2SK2146
Abstract: H1 SOT-89
Text: TOSHIBA • ^ 7 2 5 0 0Q2337D f l ^ T O S H IB A FIELD EFFECT T R A N S IS T O R 2SK2146 SILIC O N N C H A N N E L M O S T Y P E 2 S K 2 1 46 H IG H S PEED , HIGH C U R R E N T S W IT C H IN G A P P L IC A T IO N S C H O P P E R R E G U L A T O R , DC-DC C O N V E R T E R A N D M O T O R D R IV E
|
OCR Scan
|
2337D
2SK2146
20kfi)
O-22QAB
O-220
50URCE
O-220FL
00E3b43
O-220SM
H1 SOT-89
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA Discrete Semiconductors 2SK1792 Industrial Applications TO-22QFL Field Effect Transistor 2 Unit in mm Silicon N Channel MOSType L -ti-MOS IV 10.3 MAX 1 ,3 2 ^ - 5r " High Speed Switching, DC-DC Converter, Relay Drive, Motor Drive Applications Features
|
OCR Scan
|
2SK1792
O-22QFL
100nA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA TQC17ESQ 0 0 2 3 3 4 4 7T7 TO SH IBA FIELD EFFECT TRANSISTOR 2SK1721 SILICON N CHANNEL M OS TYPE ff- M O SII 2 S K 1 721 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. TO-220FL U n it in mm DC-DC CONVERTER AND M OTOR DRIVE APPLICATIONS. • Low Drain-Source O N Resistance
|
OCR Scan
|
17ESQ
2SK1721
O-220FL
0023b43
O-220SM
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TDTTSSD 0023311 250 TOSHIBA TO SH IBA FIELD EFFECT TRANSISTOR 2SK1530 SILICON N C H ANN EL M O S TYPE 2 S K 1 530 HIGH POW ER AMPLIFIER APPLICATION • • • U nit in mm High Breakdown Voltage : V j gg = 200V High Forward Transfer Admittance : |Yfs| = 5.0S Typ.)
|
OCR Scan
|
2SK1530
2SJ201
2-21F1B
O-220SM
|
PDF
|