9000 044 053 siemens
Abstract: 110N07
Text: HiPerFETTM Power MOSFETs VDSS IXFK 110 N06 IXFK 105 N07 IXFK 110 N07 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions VDSS TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; RGS = 1 MW VGS VGSM Maximum Ratings N07 N06 N07
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O-264
ID130
150OC
100OC
9000 044 053 siemens
110N07
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TO-264 Jedec package outline
Abstract: ID130 110N07
Text: HiPerFETTM Power MOSFETs VDSS IXFK 110 N06 IXFK 105 N07 IXFK 110 N07 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions VDSS TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; RGS = 1 MW VGS VGSM Maximum Ratings N07 N06 N07
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O-264
ID130
150OC
100OC
TO-264 Jedec package outline
ID130
110N07
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Untitled
Abstract: No abstract text available
Text: Casing Type Metal box LH Series Three-Phase Large Current Type Model Rated voltage AC/DC V Rated current AC/DC (A) LH-3603 LH-3803 LH-31103 LH-31503 LH-3803K LH-31103K LH-31503K 250 250 250 250 250 250 250 60 80 110 150 50 to 80 90 to 110 120 to 150 Withstanding
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LH-3603
LH-3803
LH-31103
LH-31503
LH-3803K
LH-31103K
LH-31503K
500VDC
50V/60Hz,
LH-3603
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110N30
Abstract: No abstract text available
Text: Advance Technical Information IXTK 110N30 High Current MegaMOSTMFET VDSS ID25 = 300 V = 110 A Ω = 26 mΩ RDS on N-Channel Enhancement Mode Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ
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110N30
728B1
123B1
728B1
065B1
110N30
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01N100D
Abstract: 98809b ON 534 TO252 01N1
Text: High Voltage MOSFET N-Channel, Depletion Mode IXTP 01N100D IXTU 01N100D IXTY 01N100D VDSS = 1000 V ID25 = 100 mA Ω RDS on = 110 Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 1000 V VDGX TJ = 25°C to 150°C 1000
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01N100D
O-220
405B2
01N100D
98809b
ON 534 TO252
01N1
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mv silicon mp3 player
Abstract: 73212 SiP21101 100-W SC70-5 sip21101dr-18-e3 SIP21101DR-285 SiP21101DR-26-E3 mp3 player
Text: SiP21101 Vishay Siliconix 150-mA Ultra Low-Noise LDO Regulator With Discharge FEATURES D Ultra Low Dropout—130 mV at 150-mA Load D Ultra Low Noise—30 mV rms (10-Hz to 100-kHz Bandwidth) D Shutdown Control D 110-mA Ground Current at 150-mA Load D 1.5% Guaranteed Output Voltage Accuracy
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SiP21101
150-mA
Dropout--130
Noise--30
10-Hz
100-kHz
110-mA
300-mA
mv silicon mp3 player
73212
100-W
SC70-5
sip21101dr-18-e3
SIP21101DR-285
SiP21101DR-26-E3
mp3 player
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs VDSS = 550 V ID25 = 48 A RDS on = 110 mW IXFK 48N55 IXFX 48N55 Single MOSFET Die trr £ 250 ns Avalanche Rated Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW
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O-264
48N55
48N55
247TM
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48n55
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs IXFK 48N55 IXFX 48N55 Single MOSFET Die VDSS = 550 V ID25 = 48 A RDS on = 110 mW trr £ 250 ns Avalanche Rated Preliminary data Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW
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48N55
247TM
O-264
48n55
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36N30
Abstract: IXTQ36N30P 36N30P
Text: PolarHTTM Power MOSFET IXTQ 36N30P IXTA 36N30P IXTP 36N30P VDSS ID25 RDS on = = = 300 V 36 A Ω 110 mΩ N-Channel Enhancement Mode Avalanche Rated TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ
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36N30P
36N30P
O-263
O-220
O-263
O-220)
36N30
IXTQ36N30P
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IXSN55N120A
Abstract: on 3150
Text: High Voltage IGBT IXSN 55N120A VCES = 1200 V IC25 = 110 A 4V VCE sat = 3 Short Circuit SOA Capability 2 Preliminary Data 4 Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1200 VCGR T J = 25°C to 150°C; RGE = 1 MW 1200 A VGES Continuous
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55N120A
OT-227
IXSN55N120A
on 3150
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24N60C
Abstract: 98936
Text: HiPerFASTTM IGBT LightspeedTM Series Symbol Test Conditions IXGA 24N60C IXGP 24N60C Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 48 A IC110 TC = 110°C
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24N60C
IC110
O-220
O-263
728B1
24N60C
98936
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IXGH32N60C
Abstract: 32N60C IXGH32N60
Text: HiPerFASTTM IGBT LightspeedTM Series IXGH 32N60C IXGT 32N60C Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC110 TC = 110°C
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32N60C
IC110
O-268
O-247
IXGH32N60C
32N60C
IXGH32N60
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55N120AU1
Abstract: No abstract text available
Text: High Voltage IGBT with Diode IXSN 55N120AU1 VCES IC25 VCE sat = 1200 V = 110 A = 4V 3 2 Preliminary data 4 1 Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1200 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 1200 A VGES Continuous ±20 V VGEM
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55N120AU1
55N120AU1
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IXGH30N60B
Abstract: IXGT30N60B
Text: HiPerFASTTM IGBT IXGH30N60B IXGT30N60B Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC110 TC = 110°C 30 A ICM TC = 25°C, 1 ms
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IXGH30N60B
IXGT30N60B
IC110
O-247
O-268
IXGH30N60B
IXGT30N60B
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p-mqfp-100-2 package outline
Abstract: SAB-C517A
Text: Device Specifications C517A SIEMENS 10 10.1 Device Specifications Absolute Maximum Ratings Ambient temperature under bias TA .- 40 'C to + 110 'C Storage temperature (Tst).- 65 ”C to +• 150 'C
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C517A
fl235bOS
FP-100-2
P-MQFP-100-2
p-mqfp-100-2 package outline
SAB-C517A
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Untitled
Abstract: No abstract text available
Text: □ IXYS HiPerFET VDSS Power MOSFETs IXFK 110 N06 IXFK 105 N07 IXFK 110 N07 N -C h an n el E n h a n ce m e n t M ode A v a la n c h e R ated, High dv/dt, L o w trr Symbol TestConditions v DSS Tj = 25°C to 150°C v DGR Td = 25°C to 150°C; RGS = 1 M£i
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O-264
110N06
105N07
110N07
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Untitled
Abstract: No abstract text available
Text: CY7C387P CY7C388P UltraLogic Very High Speed 8K Gate CMOS FPGA ^ CYPRESS Features • Very high speed — Loadable counter frequencies greater than 150 MHz — Chip-to-chip operating frequencies up to 110 MHz — Input + logic cell + output delays under 6 ns
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CY7C387P
CY7C388P
144-pin
208-pin
223-pin
Standby08-Pin
208-Pin
223-Pin
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hp 6263
Abstract: pasic380 CY7C382P CY7C384A CY7C385P CY7C385P-1AC CY7C385P-2AI CY7C386P CY7C388P CERAMIC leaded CHIP CARRIER CLCC 68
Text: « F CY7C385P CY7C386P C YPR ESS UltraLogic Very High Speed 4K Gate CMOS FPGA Features • Very high speed — Loadable counter frequencies greater than 150 MHz — Chip-to-chip operating frequencies up to 110 MHz — Input + logic cell + output delays
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CY7C385P
CY7C386P
84-pin
145-pin
100-pin
144-pin
160-pin
16-bit
CY7C386P-XGMB
hp 6263
pasic380
CY7C382P
CY7C384A
CY7C385P-1AC
CY7C385P-2AI
CY7C386P
CY7C388P
CERAMIC leaded CHIP CARRIER CLCC 68
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U208
Abstract: A144 CY7C386P CY7C387P CY7C388P G223
Text: CY7C387P CY7C388P CYPRESS Features • Very high speed — Loadable counter frequencies greater than 150 MHz — Chip-to-chip operating frequencies up to 110 MHz — Input + logic cell + output delays under 6 ns • Unparalleled FPGA performance for counters, data path, state machines,
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CY7C387P
CY7C388P
144-pin
208-pin
223-pin
CY7C388P-
CY7C388P-0GMB
CY7C388P-0UMB
U208
A144
CY7C386P
CY7C388P
G223
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CY7C384A-XGMB
Abstract: CY7C382P CY7C383A CY7C383A-2JC CY7C383A-2JI CY7C384A CY7C385P CLK503
Text: CY7C383A CY7C384A CYPRESS Features • Very high speed — Loadable counter frequencies greater than 150 MHz — Chip-to-chip operating frequencies up to 110 MHz — Input + logic cell + output delays under 6 ns • Unparalleled FPGA performance for counters, data path, state machines,
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CY7C383A
CY7C384A
84-pin
85-pin
100-pin
16-bit
CY7C384Aâ
84-Lead
CY7C384A-
C384Aâ
CY7C384A-XGMB
CY7C382P
CY7C383A-2JC
CY7C383A-2JI
CY7C384A
CY7C385P
CLK503
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CY7C381P
Abstract: CY7C381P-0JC CY7C381P-XJC CY7C381P-XJI CY7C382P CY7C383A CY7C385P 100-Pin CPGA Package Pin-Out Diagram
Text: CY7C381P CY7C382P CYPRESS Features • Very high speed — Loadable counter frequencies greater than 150 MHz — Chip-to-chip operating frequencies up to 110 MHz — Input + logic cell + output delays under 6 ns • Unparalleled FPGA performance for counters, data path, state machines,
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CY7C381P
CY7C382P
68-pin
69-pin
100-pin
16-bit
CY7C382Pâ
Y7C382Pâ
68-Lead
CY7C381P-0JC
CY7C381P-XJC
CY7C381P-XJI
CY7C382P
CY7C383A
CY7C385P
100-Pin CPGA Package Pin-Out Diagram
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SAF-C515C
Abstract: No abstract text available
Text: • a53SbDS DQfl3SMb 3 1 7 Device Specifications C515C SIEMENS 10 Device Specifications 10.1 A bsolute M aximum Ratings Ambient temperature under bias TA . 0 'C to + 110 °C Storage temperature ( T St ) . - 65 "C to + 150 °C
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a53SbDS
C515C
235b05
P-MQFP-80-1
CI80x
SAF-C515C
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kt 84l
Abstract: No abstract text available
Text: CY7C385P CY7C386P » r CYPR ESS UltraLogic Very High Speed 4K Gate CMOS FPGA Features • Very high speed — Loadable counter frequencies greater than 150 MHz — Chip-to-chip operating frequencies up to 110 MHz — Input + logic cell + output delays under 6 ns
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OCR Scan
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CY7C385P
CY7C386P
84-pin
145-pin
100-pin
144-pin
160-pin
7C386Pâ
160-Lead
kt 84l
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PDF
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Untitled
Abstract: No abstract text available
Text: 48Vin / 24Vout /150 Watts DC-DC Converter Module Features • DC input range: 36 - 75V • Input surge withstand: 100V for 100ms • DC output: 24V • Programmable output: 10 to 110% • Regulation: +0.2% no load to full load • Efficiency: 87% • Maximum operating temperature:
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100ms
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