mosfet switch circuit diagram
Abstract: s41519rev
Text: Si6926AEDQ New Product Vishay Siliconix Dual N-Channel 2.5-V G-S Input Protected Load Switch PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.030 @ VGS = 4.5 V 4.5 0.033 @ VGS = 3.0 V 4.2 0.035 @ VGS = 2.5 V 3.9 Qg (Typ) ESD Protected 7.6 2000 V FEATURES
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Si6926AEDQ
S-41519--Rev.
11-Oct-04
mosfet switch circuit diagram
s41519rev
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Untitled
Abstract: No abstract text available
Text: Si6926AEDQ New Product Vishay Siliconix Dual N-Channel 2.5-V G-S Input Protected Load Switch PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.030 @ VGS = 4.5 V 4.5 0.033 @ VGS = 3.0 V 4.2 0.035 @ VGS = 2.5 V 3.9 Qg (Typ) ESD Protected 7.6 2000 V FEATURES
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Si6926AEDQ
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: 194D Vishay Sprague Solid Tantalum Chip Capacitors MIDGET Conformal Coated FEATURES • 8mm, 12mm, 16mm tape and reel packaging available per EIA-481-1 and reeling per IEC 286-3, 7” [178mm] standard. PERFORMANCE CHARACTERISTICS Operating Temperature: - 55°C to + 85°C.
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EIA-481-1
178mm]
50WVDC.
RS-481.
11-Oct-04
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Untitled
Abstract: No abstract text available
Text: 255D Vishay Sprague Organic Polymer, Low ESR, Tantalum Capacitors Commercial, Surface Mount Capacitors for Switch Mode Power Supplies and Converters FEATURES • Conductive polymer cathode technology • Low ESR • No-ignition failure mode • EIA standard case sizes
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10WVDC
178mm]
330mm]
EIA-481-1.
11-Oct-04
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Untitled
Abstract: No abstract text available
Text: Si7220DN New Product Vishay Siliconix Dual N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.060 @ VGS = 10 V 4.8 0.075 @ VGS = 4.5 V 4.3 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package, 1/3 the Space of An SO-8 While
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Si7220DN
Si7220DN-T1--E3
S-41818--Rev.
11-Oct-04
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Si5404BDC-T1-E3
Abstract: SI5404BDC
Text: Si5404BDC New Product Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.028 @ VGS = 4.5 V 7.5 0.039 @ VGS = 2.5 V 6.3 D TrenchFETr Power MOSFET Qg (Typ) 63 6.3 1206-8 ChipFETr D 1 D D D D G D D G S Marking Code
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Si5404BDC
Si5404BDC-T1--E3
S-41826--Rev.
11-Oct-04
Si5404BDC-T1-E3
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Si5404BDC
Abstract: No abstract text available
Text: Si5404BDC New Product Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.028 @ VGS = 4.5 V 7.5 0.039 @ VGS = 2.5 V 6.3 D TrenchFETr Power MOSFET Qg (Typ) 63 6.3 1206-8 ChipFETr D 1 D D D D G D D G S Marking Code
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Si5404BDC
Si5404BDC-T1--E3
08-Apr-05
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SQFP-48
Abstract: T6N 700 UCC5638
Text: SiP5638 New Product Vishay Siliconix 15-Line SCSI Bus Terminators D Pin Compatible with UCC5638 D Lead Pb -Free SQFP-48 Package FEATURES D Auto Selection of S/E or LVD SCSI Termination D 2.7-V to 5.25-V TERMPWR Range D Meets SCSI-1, SCSI-2, SPI-2 (ULTRA-2), SPI-3
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SiP5638
15-Line
UCC5638
SQFP-48
ULTRA-160)
ULTRA-320)
08-Apr-05
T6N 700
UCC5638
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RISE3
Abstract: No abstract text available
Text: WSZ Vishay Wirewound Resistors, Surface Mount, Silicone or Cement Coated, High Power FEATURES ∑ Low cost, high power ∑ All welded construction ∑ Ceramic core ∑ Available on tape and reel STANDARD ELECTRICAL SPECIFICATIONS MODEL POWER RATING P25°C
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E12/E241)
TC-10.
80ppm/K2)
180ppm/K
50ppm/
30ppm/
WSZ6720
WSZ7532
WSZ8027
GLOBAZ7532
RISE3
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Si5404BDC
Abstract: No abstract text available
Text: Si5404BDC New Product Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.028 @ VGS = 4.5 V 7.5 0.039 @ VGS = 2.5 V 6.3 D TrenchFETr Power MOSFET Qg (Typ) 63 6.3 1206-8 ChipFETr D 1 D D D D G D D G S Marking Code
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Si5404BDC
Si5404BDC-T1--E3
18-Jul-08
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MCT0603
Abstract: MCS 0402 AT - Precision
Text: MCS 0402, MCT 0603, MCU 0805, MCA 1206 - Precision Vishay Beyschlag Precision Flat Chip Resistors FEATURES ∑ Approved according to EN 140401-801 ∑ Thin-film technology ∑ ∑ ∑ ∑ Low TC: ± 10 to ± 25 ppm/K Precision tolerance of value: ± 0.1 and ± 0.25 %
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11-Oct-04
MCT0603
MCS 0402 AT - Precision
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SiP5678
Abstract: SQFP-48 UCC5638 T15N
Text: SiP5678 New Product Vishay Siliconix 15-Line SCSI Bus Terminators D Pin Compatible with UCC5638 D Lead Pb -Free SQFP-48 Package FEATURES D Auto Selection of S/E or LVD SCSI Termination D 2.7-V to 5.25-V TERMPWR Range D Meets SCSI-1, SCSI-2, SPI-2 (ULTRA-2), SPI-3
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SiP5678
15-Line
UCC5638
SQFP-48
ULTRA-160)
ULTRA-320)
S-41843--Rev.
11-Oct-04
UCC5638
T15N
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top 8901
Abstract: SI8901 J-STD-020A
Text: Si8901DB New Product Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Ultra-Low rSS(on) D New MICRO FOOTr Chipscale Packaging Reduces Footprint Area, Profile (0.65 mm) and On-Resistance Per Footprint Area PRODUCT SUMMARY
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Si8901DB
Si8901DB-T2--E3
18-Jul-08
top 8901
SI8901
J-STD-020A
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SiP5678
Abstract: SQFP-48 UCC5638
Text: SiP5678 New Product Vishay Siliconix 15-Line SCSI Bus Terminators D Pin Compatible with UCC5638 D Lead Pb -Free SQFP-48 Package FEATURES D Auto Selection of S/E or LVD SCSI Termination D 2.7-V to 5.25-V TERMPWR Range D Meets SCSI-1, SCSI-2, SPI-2 (ULTRA-2), SPI-3
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SiP5678
15-Line
UCC5638
SQFP-48
ULTRA-160)
ULTRA-320)
18-Jul-08
UCC5638
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8409 diode
Abstract: Si8409DB 8409 J-STD-020A Si8401DB S-41816 diode 8409 marking 8409
Text: Si8409DB New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.046 @ VGS = −4.5 V −6.3 0.065 @ VGS = −2.5 V −5.3 Qg (Typ) 17 D TrenchFETr Power MOSFET D New MICRO FOOTr Chipscale Packaging
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Si8409DB
Si8401DB
Si8409DB-T1--E1
08-Apr-05
8409 diode
8409
J-STD-020A
S-41816
diode 8409
marking 8409
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T6N 700
Abstract: SQFP-48 UCC5628 t11N
Text: SiP5628 New Product Vishay Siliconix 14-Line SCSI Bus Terminators D Pin Compatible with UCC5628 D Lead Pb -Free SQFP-48 Package FEATURES D Auto Selection of S/E or LVD SCSI Termination D 2.7-V to 5.25-V TERMPWR Range D Meets SCSI-1, SCSI-2, SPI-2 (ULTRA-2), SPI-3
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SiP5628
14-Line
UCC5628
SQFP-48
ULTRA-160)
ULTRA-320)
08-Apr-05
T6N 700
UCC5628
t11N
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SQFP-48
Abstract: UCC5628
Text: SiP5628 New Product Vishay Siliconix 14-Line SCSI Bus Terminators D Pin Compatible with UCC5628 D Lead Pb -Free SQFP-48 Package FEATURES D Auto Selection of S/E or LVD SCSI Termination D 2.7-V to 5.25-V TERMPWR Range D Meets SCSI-1, SCSI-2, SPI-2 (ULTRA-2), SPI-3
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SiP5628
14-Line
UCC5628
SQFP-48
ULTRA-160)
ULTRA-320)
18-Jul-08
UCC5628
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T12P
Abstract: SiP5668 SQFP-48 UCC5628
Text: SiP5668 New Product Vishay Siliconix 14-Line SCSI Bus Terminators D Pin Compatible with UCC5628 D Lead Pb -Free SQFP-48 Package FEATURES D Auto Selection of S/E or LVD SCSI Termination D 2.7-V to 5.25-V TERMPWR Range D Meets SCSI-1, SCSI-2, SPI-2 (ULTRA-2), SPI-3
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SiP5668
14-Line
UCC5628
SQFP-48
ULTRA-160)
ULTRA-320)
08-Apr-05
T12P
UCC5628
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diode 8409
Abstract: marking 8409 8409 diode
Text: Si8409DB New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.046 @ VGS = −4.5 V −6.3 0.065 @ VGS = −2.5 V −5.3 Qg (Typ) 17 D TrenchFETr Power MOSFET D New MICRO FOOTr Chipscale Packaging
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Si8409DB
Si8401DB
Si8409DB-T1--E1
S-41816--Rev.
11-Oct-04
diode 8409
marking 8409
8409 diode
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KDS 32kHZ crystal
Abstract: CRYSTAL 32.768KHz DATASHEET KDS KDS Crystals 32.768 KDS 70 Crystals quartz kds KDS oscillator KDS Crystals 8.192 kds 32.768 KDS Crystals KDS Crystals 32.768kHz
Text: M41T62, M41T63 M41T64, M41T65 Serial Access Real-Time Clock with Alarms FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 350nA TIMEKEEPING CURRENT @ 3V TIMEKEEPING DOWN TO 1.0V 1.3V TO 4.4V I2C BUS OPERATING VOLTAGE
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M41T62,
M41T63
M41T64,
M41T65
350nA
400kHz)
M41T63/64)
M41T62/65)
32KHz
M41T62/63/64)
KDS 32kHZ crystal
CRYSTAL 32.768KHz DATASHEET KDS
KDS Crystals 32.768
KDS 70 Crystals
quartz kds
KDS oscillator
KDS Crystals 8.192
kds 32.768
KDS Crystals
KDS Crystals 32.768kHz
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KDS 32kHZ crystal
Abstract: M41T63 M41T62 M41T64 M41T65 VSOJ20
Text: M41T62, M41T63 M41T64, M41T65 Serial Access Real-Time Clock with Alarms Feature summary • Counters for tenths/hundredths of seconds, seconds, minutes, hours, day, date, month, year, and century ■ 32 KHz crystal oscillator integrating load capacitance and high crystal series resistance
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M41T62,
M41T63
M41T64,
M41T65
400kHz)
350nA
QFN16
VSOJ20
32KHz
KDS 32kHZ crystal
M41T63
M41T62
M41T64
M41T65
VSOJ20
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top 8901
Abstract: SI8901 bi 370 transistor Bi-Directional P-Channel mosfet J-STD-020A
Text: Si8901DB New Product Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Ultra-Low rSS(on) D New MICRO FOOTr Chipscale Packaging Reduces Footprint Area, Profile (0.65 mm) and On-Resistance Per Footprint Area PRODUCT SUMMARY
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Si8901DB
Si8901DB-T2--E3
S-41820--Rev.
11-Oct-04
top 8901
SI8901
bi 370 transistor
Bi-Directional P-Channel mosfet
J-STD-020A
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Untitled
Abstract: No abstract text available
Text: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION ^ _ _ _ BY TYCO ELECTRONICS CORPORATION. - - DIST LOC ALL RIGHTS RESERVED. CE 16 R E V IS IO N S p LTR c DESCRIPTION REVISED PER 0 A 4 0 - 0 4 B 5 - 0 4 DATE DWN APVD 11OCT04 JW D JD
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11OCT04
1310nm
31MAR2000
04APROO
04APRQQ
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. GP DIST R E V IS IO N S 00 LTR A 3. 125.06 [4.924] REF' DATE REVISED PER EC OS1 1 - 0 0 0 9 - 0 5 MATERIAL: HOUSING AND EJECTOR: HIGH TEMPERATURE NYLON
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00064T
00102L
110CT04
23FEB95
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