FGL35N120FTDTU
Abstract: FGL35N120FTD 16S-W c368w
Text: FGL35N120FTD tm 1200V, 35A Trench IGBT Features General Description • Field Stop Trench Technology Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche
|
Original
|
FGL35N120FTD
FGL35N120FTDTU
FGL35N120FTD
16S-W
c368w
|
PDF
|
inverter welding machine
Abstract: FAIRCHILD Igbts FGH25N120FTDS fgh25n120 IGBT Transistor 1200V, 25A
Text: FGH25N120FTDS tm 1200V, 25A Field Stop Trench IGBT Features General Description • High speed switching Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche
|
Original
|
FGH25N120FTDS
FGH25N120FTDS
inverter welding machine
FAIRCHILD Igbts
fgh25n120
IGBT Transistor 1200V, 25A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FGH25N120FTDS tm 1200V, 25A Field Stop Trench IGBT Features General Description • High speed switching • Low saturation voltage: VCE sat = 1.60V @ IC = 25A • High input impedance • RoHS compliant Using advanced field stop trench technology, Fairchild’s 1200V
|
Original
|
FGH25N120FTDS
FGH25N120FTDS
|
PDF
|
fga20s120m
Abstract: 600v 20a IGBT 1200v 20a IGBT DIODE GE 20a igbt 20A 1200v 12v igbt 20a
Text: FGA20S120M tm 1200V, 20A ShortedAnodeTM IGBT Features General Description • High speed switching Using advanced Field Stop Trench and ShortedAnode technology, Fairchild’s 1200V ShortedAnodeTM Trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche capability. This
|
Original
|
FGA20S120M
fga20s120m
600v 20a IGBT
1200v 20a IGBT
DIODE GE 20a
igbt 20A 1200v
12v igbt 20a
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FGL35N120FTD tm 1200V, 35A Trench IGBT Features General Description • Field Stop Trench Technology • High Speed Switching Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche
|
Original
|
FGL35N120FTD
|
PDF
|
SiC IGBT High Power Modules
Abstract: SiC JFET SiC-JFET infineon power cycling ups high power FET Transistor "silicon carbide" FET silicon carbide JFET high power FET Transistor for ups infineon igbt power solar inverter silicon carbide j-fet
Text: Product Brief main Features 1200V IGBT 4 n n n n THe neW 1200V IGBT 4 generation combined with the improved emitter Controlled diode from Infineon provides three optimized chip versions for low, medium and high power IGBT modules. These chips are designed to the needs
|
Original
|
B133-H9049-G2-X-7600
SiC IGBT High Power Modules
SiC JFET
SiC-JFET
infineon power cycling
ups high power FET Transistor
"silicon carbide" FET
silicon carbide JFET
high power FET Transistor for ups
infineon igbt power solar inverter
silicon carbide j-fet
|
PDF
|
mosfet 1200V
Abstract: cmf20120 SiC MOSFET Cree SiC MOSFET DMOSFET CMF20120D IXDI414 DMOS SiC JEDEC24 RB160M-60
Text: CMF20120D-Silicon Carbide Power MOSFET 1200V 80 mΩ Z-FET MOSFET Rev. CMF20120D N-Channel Enhancement Mode Subject to change without notice. www.cree.com/power 1 CMF20120D-Silicon Carbide Power MOSFET Z-FET™ MOSFET N-Channel Enhancement Mode VDS = 1200 V
|
Original
|
CMF20120D-Silicon
CMF20120D
O-247-3
CMF20120D
mosfet 1200V
cmf20120
SiC MOSFET
Cree SiC MOSFET
DMOSFET
IXDI414
DMOS SiC
JEDEC24
RB160M-60
|
PDF
|
H-Bridge
Abstract: 600V1200V p623f
Text: Standard H-Bridge Module fastPACK 0 H 2nd gen Features - H-bridge 600V.1200V / 20A.100A Standard- and high speed IGBT´s or MOS-FET Ultra low inductive design Vincotech - Power Flow Through for simple PCB routing Vincotech - Clip In, the reliable interconnection between PCB, module and
|
Original
|
V23990-P62x-Fxx-U-02-14
P623-F04-PM
P623-F14-PM
P623-F24-PM
P624-F24-PM
P625-F24-PM
P629-F44-U-02-14
H-Bridge
600V1200V
p623f
|
PDF
|
p623f
Abstract: 600V1200V p623
Text: Standard H-Bridge Module fastPACK 0 H 2nd gen Features - H-bridge 600V.1200V / 20A.100A Standard- and high speed IGBT´s or MOS-FET Ultra low inductive design Vincotech - Power Flow Through for simple PCB routing Vincotech - Clip In, the reliable interconnection between PCB, module and
|
Original
|
V23990-P62x-Fxx-U-02-14
P623-F04-PM
P623-F14-PM
P623-F24-PM
P624-F24-PM
P625-F24-PM
p623f
600V1200V
p623
|
PDF
|
CMF20120D
Abstract: JEDEC24 mosfet 1200V RB160M 6N137 IXDI414 RB160M-60 DMOS SiC electronic transformer halogen 12v MOSFET 800V 10A
Text: CMF20120D-Silicon Carbide Power MOSFET 1200V 80 mΩ Z-FeTTM MOSFET Rev. A CMF20120D N-Channel Enhancement Mode Subject to change without notice. www.cree.com/power 1 CMF20120D-Silicon Carbide Power MOSFET Z-FeTTM MOSFET VDS = 1200 V RDS on = 80 mΩ N-Channel Enhancement Mode
|
Original
|
CMF20120D-Silicon
CMF20120D
O-247-3
CMF20120D
JEDEC24
mosfet 1200V
RB160M
6N137
IXDI414
RB160M-60
DMOS SiC
electronic transformer halogen 12v
MOSFET 800V 10A
|
PDF
|
MYXJ11200-34CAB
Abstract: silicon carbide
Text: Silicon Carbide J-FET Normally On 1200 Volt 34 Amp Hermetic MYXJ11200-34CAB Product Overview Features y r a in Benefits • High voltage 1200V • Low on resistance RDS On • High current 34A • Voltage controlled • High temperature 175°C • Low gate charge
|
Original
|
MYXJ11200-34CAB
MIL-PRF-19500
MYXJ11200-34CAB
silicon carbide
|
PDF
|
CAS100H12
Abstract: CREE 1200V Z-Rec CAS100H12AM1 Cree SiC MOSFET silicon carbide MOSFET "CURRENT source"
Text: CAS100H12AM1 VDS 1200 V 1200V, 100A Silicon Carbide Half-Bridge Module Z-FETTM MOSFET and Z-RecTM Diode ID TC= 100˚C 100 A RDS(on) Features • • • • • • Package Ultra Low Loss High Ruggedness High-Frequency Operation Zero Reverse Recovery Current from Diode
|
Original
|
CAS100H12AM1
VDS1200
CAS100H12AM1,
CAS100H12
CREE 1200V Z-Rec
CAS100H12AM1
Cree SiC MOSFET
silicon carbide
MOSFET "CURRENT source"
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FGA30N120FTD 1200 V, 30 A Field Stop Trench IGBT Features • Field Stop Trench Technology General Description • High Speed Switching Using advanced field stop trench technology, Fairchild ’s 1200V trench IGBTs offer superior conduction and switching
|
Original
|
FGA30N120FTD
|
PDF
|
FGA15N20
Abstract: No abstract text available
Text: FGA15N120FTD 1200 V, 15 A Field Stop Trench IGBT Features • Field Stop Trench Technology General Description • High Speed Switching Using advanced field stop trench technology, Fairchild ’s 1200V trench IGBTs offer superior conduction and switching
|
Original
|
FGA15N120FTD
FGA15N20
|
PDF
|
|
|
wechselrichter
Abstract: TRANSISTOR TC 100 RG 150 diode diode p 600 k
Text: target datasheet version 09/02 V23990-P439-F flow PACK 1, 1200V Maximum Ratings / Höchstzulässige Werte at Tj=25°C, unless otherwise specified Parameter Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung
|
Original
|
V23990-P439-F
TJ125
-100A/
-200A/
D81359
wechselrichter
TRANSISTOR TC 100
RG 150 diode
diode p 600 k
|
PDF
|
marking codes fairchild
Abstract: 1200v 3A
Text: S3N 3A, 1200V Surface Mount Rectifier Features • Low Profile Package • Glass Passivated Junction. • High Breakdown Voltage Rating • UL Flammability Classification 94V-0 ELECTRICAL SYMBOL SMC/DO-214AB DEVICE MARKING CODE : S3N COLOR BAND DENOTES CATHODE
|
Original
|
SMC/DO-214AB
marking codes fairchild
1200v 3A
|
PDF
|
fga30n120
Abstract: FGH30N120FT
Text: FGA30N120FTD 1200 V, 30 A Field Stop Trench IGBT Features • Field Stop Trench Technology General Description • High Speed Switching Using advanced field stop trench IGBT technology, Fairchild ’s 1200V trench IGBTs offer the optimum performance for hard
|
Original
|
FGA30N120FTD
FGA30N120FTD
FGH30N120FTD
fga30n120
FGH30N120FT
|
PDF
|
FGA20N120
Abstract: FGA20N120FTD
Text: FGA20N120FTD 1200 V, 20 A Field Stop Trench IGBT Features General Description • Field Stop Trench Technology Using advanced field stop trench technology, Fairchild ’s 1200V trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can
|
Original
|
FGA20N120FTD
FGA20N120FTD
FGA20N120
|
PDF
|
EL2033CN
Abstract: EL2003C EL2003CM EL2003CN EL2033C E2130 RB350
Text: 100MHz Video Line Driver Features General Description • Differential gain 0.1% • Differential phase 0.1° • 100mA continuous output current guaranteed • Short circuit protected • Wide bandwidth - 100MHz • High slew rate - 1200V/µs • High input impedance - 2MΩ
|
Original
|
100MHz
100mA
100MHz
EL2003C
EL2033C
100MHz,
EL2033CN
EL2003CM
EL2003CN
E2130
RB350
|
PDF
|
fgh25n120
Abstract: FGH25N120FTDS fgh25n120ftd
Text: FGH25N120FTDS 1200 V, 25 A Field Stop Trench IGBT Features General Description • High Speed Switching Using advanced field stop trench technology, Fairchild ’s 1200V trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and
|
Original
|
FGH25N120FTDS
FGH25N120FTDS
O-247
fgh25n120
fgh25n120ftd
|
PDF
|
FGA20N120
Abstract: No abstract text available
Text: FGA20N120FTD 1200 V, 20 A Field Stop Trench IGBT Features General Description • Field Stop Trench Technology Using advanced field stop trench technology, Fairchild ’s 1200V trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can
|
Original
|
FGA20N120FTD
FGA20N120FTD
FGA20N120
|
PDF
|
igbt 40a 600v
Abstract: No abstract text available
Text: FGA20N120FTD 1200 V, 20 A Field Stop Trench IGBT Features General Description • Field Stop Trench Technology Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate
|
Original
|
FGA20N120FTD
igbt 40a 600v
|
PDF
|
EL2003C
Abstract: EL2003CM EL2003CN EL2033C EL2033CN E2130
Text: 100MHz Video Line Driver Features General Description • Differential gain 0.1% • Differential phase 0.1° • 100mA continuous output current guaranteed • Short circuit protected • Wide bandwidth - 100MHz • High slew rate - 1200V/µs • High input impedance - 2MΩ
|
Original
|
100MHz
100mA
100MHz
EL2003C
EL2033C
100MHz,
EL2003CM
EL2003CN
EL2033CN
E2130
|
PDF
|
Quasi-resonant Converter for induction cooker
Abstract: IGBT 60A spice model 1000V igbt dc to dc buck converter CAR IGNITION WITH IGBTS 10 kw schematic induction heating Quasi-resonant Converter induction cooker applications FQPF18N50 1 kw schematic induction heating 600V igbt dc to dc buck converter pwm igbt based ac-dc converter
Text: The Power Franchise Summer - 2002 FEATURED IN THIS ISSUE 1200V Stealth fast/soft recovery avalanche energy rated diodes . . . Page 4 Trench MOSFETs for 42V automotive applications . . . Page 5 Bottomless SO-8 Package PowerTrench family . . . Page 6 .And More! . . . Page 7 and 8
|
Original
|
Semiconducto01
Quasi-resonant Converter for induction cooker
IGBT 60A spice model
1000V igbt dc to dc buck converter
CAR IGNITION WITH IGBTS
10 kw schematic induction heating
Quasi-resonant Converter induction cooker applications
FQPF18N50
1 kw schematic induction heating
600V igbt dc to dc buck converter
pwm igbt based ac-dc converter
|
PDF
|