Untitled
Abstract: No abstract text available
Text: CED1012L/CEU1012L N-Channel Enhancement Mode Field Effect Transistor FEATURES 120V, 10A, RDS ON = 120mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package.
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CED1012L/CEU1012L
O-251
O-252
O-251
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Untitled
Abstract: No abstract text available
Text: CEP1012L/CEB1012L N-Channel Enhancement Mode Field Effect Transistor FEATURES 120V, 10A, RDS ON = 120mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package.
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CEP1012L/CEB1012L
O-220
O-263
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PDF
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PT10m
Abstract: A1210 BTA1210J3
Text: CYStech Electronics Corp. Spec. No. : C656J3 Issued Date : 2004.05.12 Revised Date :2009.02.04 Page No. : 1/7 PNP Epitaxial Planar Transistor BTA1210J3 BVCEO IC RCESAT -120V -10A 270mΩ Description The BTA1210J3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low
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C656J3
BTA1210J3
-120V
BTA1210J3
O-252
UL94V-0
PT10m
A1210
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PDF
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Untitled
Abstract: No abstract text available
Text: CED1012L/CEU1012L N-Channel Enhancement Mode Field Effect Transistor FEATURES 120V, 10A, RDS ON = 120mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package.
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Original
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CED1012L/CEU1012L
O-251
O-252
O-251
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PDF
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radar circuit component
Abstract: No abstract text available
Text: CED1012/CEU1012 N-Channel Enhancement Mode Field Effect Transistor FEATURES 120V, 10A, RDS ON = 120mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package.
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Original
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CED1012/CEU1012
O-251
O-252
O-251
radar circuit component
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PDF
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S945
Abstract: No abstract text available
Text: CEP1012L/CEB1012L N-Channel Enhancement Mode Field Effect Transistor FEATURES 120V, 10A, RDS ON = 120mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package.
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Original
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CEP1012L/CEB1012L
O-220
O-263
S945
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PDF
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radar circuit component
Abstract: No abstract text available
Text: CED1012/CEU1012 N-Channel Enhancement Mode Field Effect Transistor FEATURES 120V, 10A, RDS ON = 120mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package.
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Original
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CED1012/CEU1012
O-251
O-252
O-251
radar circuit component
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PDF
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Untitled
Abstract: No abstract text available
Text: CED1012L/CEU1012L N-Channel Enhancement Mode Field Transistor FEATURES 120V , 10A , RDS ON =120mΩ @VGS=5V Super high dense cell design for extremely low RDS(ON). D 6 High power and current handling capability. TO-251 & TO-252 package. G D G S CEU SERIES
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Original
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CED1012L/CEU1012L
O-251
O-252
O-252AA
O-251
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PDF
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Untitled
Abstract: No abstract text available
Text: CEP1012/CEB1012 March 1998 N-Channel Enhancement Mode Field Transistor 4 FEATURES D 120V , 10A , RDS ON =120m Ω @VGS=10V Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. G D G S
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CEP1012/CEB1012
O-220
O-263
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PDF
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Untitled
Abstract: No abstract text available
Text: CEP1012L/CEB1012L 4 N-Channel Enhancement Mode Field Transistor FEATURES D 120V , 10A , RDS ON =120mΩ @VGS=5V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. G D G S G D S CEB SERIES
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Original
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CEP1012L/CEB1012L
O-220
O-263
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PDF
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radar circuit component
Abstract: No abstract text available
Text: CED1012/CEU1012 N-Channel Enhancement Mode Field Transistor FEATURES 6 120V , 10A , RDS ON =120mΩ @VGS=10V Super high dense cell design for extremely low RDS(ON). D High power and current handling capability. TO-251 & TO-252 package. G D G S CEU SERIES TO-252AA(D-PAK)
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Original
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CED1012/CEU1012
O-251
O-252
O-252AA
O-251
radar circuit component
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PDF
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Untitled
Abstract: No abstract text available
Text: 2N6578 MECHANICAL DATA Dimensions in mm inches NPN BIPOLAR POWER DARLINGTON TRANSISTOR 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675)
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2N6578
O-204AA)
100mA
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PDF
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120v 10a transistor
Abstract: transistor darlington package to.3 npn 120v 10a transistor 2N6578
Text: 2N6578 MECHANICAL DATA Dimensions in mm inches NPN BIPOLAR POWER DARLINGTON TRANSISTOR 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675)
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Original
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2N6578
O-204AA)
100mA
120v 10a transistor
transistor darlington package to.3
npn 120v 10a transistor
2N6578
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PDF
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Untitled
Abstract: No abstract text available
Text: SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT494 ISSUE 3 - NOVEMBER 1995 PARTMARKING DETAIL TYPICAL CHARACTERISTICS FMMT494 ✪ 494 E C 0.4 0.4 I+/I*=10 +25 ° C 0.3 B 0.3 0.2 0.1 0.1 280 10mA 100mA 1A 10A 1mA 10mA 100mA 1A IC-Collector Current
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Original
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FMMT494
100mA
100ms
250mA,
500mA,
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PDF
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TB334
Abstract: RFP10N12 AN7254 RFM10N12 RFM10N15 RFP10N15 TB-334
Text: R M S RFM10N12, RFM10N15, RFP10N12, RFP10N15 Semiconductor October 1998 Data Sheet File Number 1445.2 Features 10A, 120V and 150V, 0.300 Ohm, N-Channel Power MOSFETs • 10A, 120V and 150V These are N-channel enhancement-mode silicon-gate power field effect transistors designed for applications such
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OCR Scan
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RFM10N12,
RFM10N15,
RFP10N12,
RFP10N15
TA09192.
RFM10N12
T0-204AA
RFM10N12
RFM10N15
TB334
RFP10N12
AN7254
RFP10N15
TB-334
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PDF
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Untitled
Abstract: No abstract text available
Text: RFM10P12, RFM10P15, RFP10P12, RFP10P15 H A R R IS S E M I C O N D U C T O R -10A, -120V and -150V, 0.5 Ohm, P-Channel Power MOSFETs July 1998 Features Description • -10A,-120V and-150V These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such
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OCR Scan
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RFM10P12,
RFM10P15,
RFP10P12,
RFP10P15
-120V
-150V,
and-150V
TA9404.
AN7254
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PDF
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10N15
Abstract: 10N12 rfm10n rfp10n12
Text: 2 HARRIS RFM10N12/10N15 RFP10N12/10N15 N-Channel Enhancement Mode Power Field Effect Transistors ugust 1991 Features Packages T0-204AA • 10A, 120V and 150V T0 2 • rDS on = 0.3ft • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics
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OCR Scan
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RFM10N12/10N15
RFP10N12/10N15
T0-204AA
RFM10N12
RFM10N15
RFP10N12
RFP10N15
AN-7254
AN-7260
10N15
10N12
rfm10n
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PDF
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13T1
Abstract: No abstract text available
Text: OPTEK TECHNOLOGY INC 4flE D • fc^TaSflO 00D 13T1 T ib Product BulletinOTC1550 August 1990 PNP Power Switching Transistor Die ■ OTK ^ 3 ? . ^ 'T -¥ 7 '\y Type 0TC1550 120V, 10A Applications • Inverters • Switching Regulators Through 50 KHz. • Medium Current Motor Driver
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OCR Scan
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BulletinOTC1550
0TC1550
OTC1900
-500mA,
10MHz
OTC1550
2N5003
2N5153,
2N6227
2N6308,
13T1
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PDF
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2N5003
Abstract: 2N5153 OTC1550 OTC155Q OTC1900
Text: OPTEK T E CH NO LO GY INC Product Bulletin OTC1550 August 1990 4ÔE D • ^TâSÔD OOD13 T1 Tib Hi OTK U M fc K • PNP Power Switching Transistor Die 'T -v i-\y Type 0TC1550 120V, 10A Applications • Inverters • Switching Regulators Through 50 KHz. • Medium Current Motor Driver
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OCR Scan
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ODD13T1
OTC1550
OTC1900
1550-80L
1550-80H
1550-120L
-500mA,
10MHz
OTC155Q
2N5003
2N5153
OTC1900
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PDF
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10N15L
Abstract: No abstract text available
Text: 4302271 QDS 4 7 5 5 T4 1 • HAS R FM 10 N 12L /15L R FP10N 12L /15L H a r r is N-Channel Logic Level Power Field-Effect Transistors L^FET August 1991 Features Package T 0 -2 0 4 A A BOTTOM VIEW • 10A, 120V and 150V • rDS(ON) = 0-3H SOURCE f • Design Optimized for 5V Gate Drives
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OCR Scan
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FP10N
RFM10N12L
RFM10N15L
RFP10N12L
10N12L,
10N15L,
RFP10N12L,
RFP10N15L
92CS-376S4
AN7254
10N15L
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PDF
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F12N10L
Abstract: f12N08L f12n08 f12n10 RFM12N08L RFP12N10L RFM10N12L RFM10N15L RFM12N10L RFP10N12L
Text: h a r r R F M 1 0 N 1 2 L /1 5 L R F P 1 0 N 1 2 L /1 5 L i s N-Channel Logic Level Power Field-Effect Transistors L2FET August 1991 Package Features TO-204AA BOTTOM VIEW • 10A, 120V and 150V • fDS(ON) = O-3« □RAIN (FLANGE) SOURCE • Design Optimized for 5V Gate Drives
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OCR Scan
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RFM10N12L/15L
RFP10N12L/15L
RFM10N12L
RFM10N15L
RFP10N12L
RFP10N15L
RFM12N08L,
RFM12N10L,
RFP12N08L,
RFP12N10L
F12N10L
f12N08L
f12n08
f12n10
RFM12N08L
RFM12N10L
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PDF
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10N15L
Abstract: P10N15L RFP10N12L
Text: R F M 1 0 N 1 2 L /1 5 L R F P 1 0 N 1 2 L /1 5 L gì h a r r is N - C h a n n e l L o g ic Level P o w e r F ie l d - E f f e c t T r a n s is to r s L 2 F ET August 1991 Package F e a tu re s T O -2 0 4 A A • 10A, 120V and 150V BOTTOM VIEW • rDS(0N) = 0 .3 fl
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OCR Scan
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FP10N12L
AN7254
AN-7260.
92CS-3BI64
10N15L
P10N15L
RFP10N12L
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PDF
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2N3597
Abstract: 2N3599 2N5539 BDY58 SDT8301 SDT8304 SDT8758 74c74 TRANSISTOR TO63
Text: -Ælttron A T T Ä L ( MEDIUM VOLTAGE, FAST SWITCHING Devices. Inc. NPN EPITAXIAL/TRIPLE DIFFUSED PLANAR POWER TRANSISTOR* (FORMERLY 86 CHIP N UM BER CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)
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OCR Scan
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305mm)
2N3597
2N3599
2N5539
BDY58
SDT8301
SDT8304
SDT8758
74c74
TRANSISTOR TO63
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PDF
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120v 10a transistor
Abstract: o25m 2N5291 npn 120v 10a transistor
Text: SOLITRON DEVICES INC fib DE I fiBbfikDa D002S0b 5 | 'f'-jjELEMENT NUMBER MEDIUM TO HIGH VOLTAGE, FAST SWITCHING PN P EPITAXIAL PLANAR POWER TRANSISTOR * FORMERLY 63 CONTACT METALLIZATION Base and emitter: > 5 0 .0 0 0 A Aluminum Collector: Polished Silicon
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OCR Scan
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D002S0b
203mm)
25MHz
25MHz
350pF
120v 10a transistor
o25m
2N5291
npn 120v 10a transistor
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PDF
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