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Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: HWC34NC 123456789ABC7DEF7 952 47 9B71 7 Autumn 2002 V1 Features Outline Dimensions • Low Cost GaAs Power FET • Class A or Class AB Operation • 8.5 dB Typical Gain at 4 GHz • 5V to 10V Operation 1525.0 9 1392.5 1235.0 1 5 1077.5 10 Description 920.0	Original	HWC34NC 123456789ABC7DEF7 HWC34NC TST231	PDF
Untitled Abstract: No abstract text available Text: HWF1686NC 123456789ABC7DEF7 952 47 9B7 7 Autumn 2002 V1 Features 12 12 12 12 12 Output Power: P1dB=30dBm typ. High Gain: GL=15dB(typ.) High Efficiency: PAE =45%(typ.) High Linearity: IP3=45dBm(typ.) Class A or Class AB Operation Description Outline Dimensions	Original	HWF1686NC 123456789ABC7DEF7 30dBm 45dBm	PDF
Untitled Abstract: No abstract text available Text: HWC27NC 123456789ABC7DEF7 952 47 9B71 7 Autumn 2002 V1 Features Outline Dimensions • Low Cost GaAs Power FET • Class A or Class AB Operation • 11 dB Typical Gain at 4 GHz • 5V to 10V Operation 650 Source Description 435 1 215 2 3 The HWC27NC is a medium power GaAs FET	Original	HWC27NC 123456789ABC7DEF7 HWC27NC	PDF
PT 4962 Abstract: No abstract text available Text: HWC27YC 123456789ABC7DEF7 47 9 B71 7 Autumn 2002 V1 Outline Dimensions Features 650 • Low Cost GaAs Power FET • Class A or Class AB Operation • 18 dB Typical Gain at 2.4GHz • 5V to 10V Operation Source 435 1 215 2 3 Description The HWC27YC is a medium power GaAs FET	Original	HWC27YC 123456789ABC7DEF7 HWC27YC PT 4962	PDF
Untitled Abstract: No abstract text available Text: HWL27NC 123456789ABC7DEF7 47 9 B7 7 Autumn 2002 V1 Features Outline Dimensions • Low Cost GaAs Power FET • Class A or Class AB Operation • 17 dB Typical Gain at 2.4 GHz • 5V to 10V Operation 650 Source Description 435 1 215 2 3 The HWL27NC is a medium power GaAs FET	Original	HWL27NC 123456789ABC7DEF7 HWL27NC	PDF
Untitled Abstract: No abstract text available Text: @ @ HWL26NC @ @ 123456789ABC7DEF7 952 47 9B7 7 @ @ March 2004 V2 Outline Dimensions Features • Low Cost GaAs Power FET • Class A or Class AB Operation 451.5 • 17 dB Typical Gain at 2.4 GHz 376 • 5V to 10V Operation Description 1 226 2 226.0 4	Original	HWL26NC 123456789ABC7DEF7 HWL26NC	PDF
Untitled Abstract: No abstract text available Text: HWF1686YC 123456789ABC7DEF7 47 9 B7 7 Autumn 2002 V1 Features 12 12 12 12 Output Power: P1dB=30dBm typ. High Gain: GL=16dB(typ.) High Efficiency: PAE=45%(typ.) High Linearity: IP3=45dBm(typ.) Description Designed for various RF and Microwave applications,	Original	HWF1686YC 123456789ABC7DEF7 30dBm 45dBm	PDF
Untitled Abstract: No abstract text available Text: HWL30NC 123456789ABC7DEF7 952 47 9B7 7 Autumn 2002 V1 Features • Low Cost GaAs Power FET • Class A or Class AB Operation • 15 dB Typical Gain at 2.4 GHz • 5V to 10V Operation Outline Dimensions 860 S ou rce 650 1 4 430 2 5 3 6 Description The HWL30NC is a medium power GaAs FET	Original	HWL30NC 123456789ABC7DEF7 HWL30NC	PDF
Untitled Abstract: No abstract text available Text: HWL34NC 123456789ABC7DEF7 952 47 9B7 7 Autumn 2002 V1 • 14.5 dB Typical Gain at 2.4 GHz • 5V to 10V Operation Outline Dimensions 1525.0 Description 1392.5 9 The HWL34NC is a power GaAs FET designed for 1235.0 1 1077.5 10 various L-band & S-band applications.	Original	HWL34NC 123456789ABC7DEF7 HWL34NC	PDF
Untitled Abstract: No abstract text available Text: HWC30NC 123456789ABC7DEF7 952 47 9B71 7 Autumn 2002 V1 Features Outline Dimensions • Low Cost GaAs Power FET • Class A or Class AB Operation • 11 dB Typical Gain at 4 GHz • 5V to 10V Operation 860 S ou rce 650 1 4 430 2 5 3 6 Description The HWC30NC is a medium power GaAs FET	Original	HWC30NC 123456789ABC7DEF7 HWC30NC	PDF
Untitled Abstract: No abstract text available Text: HWL26YC 123456789ABC7DEF7 47 9 B7 7 Autumn 2002 V1 Features Outline Dimensions • Low Cost GaAs Power FET • Class A or Class AB Operation • 18 dB Typical Gain at 2.4 GHz • 5V to 10V Operation 376 451.5 1 Description 226 The HWL26YC is a medium power GaAs FET	Original	HWL26YC 123456789ABC7DEF7 HWL26YC	PDF