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    12BKX Search Results

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    12BKX Price and Stock

    Switchcraft Conxall RASM712BKX

    CONN PWR JACK 2.5X5.5MM SOLDER
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    DigiKey RASM712BKX Bulk 12 1
    • 1 $4.11
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    TE Connectivity 7012BKX

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    DigiKey 7012BKX Bulk 7
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    Mouser Electronics 7012BKX
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    Newark 7012BKX Bulk 7
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    Master Electronics 7012BKX 10
    • 1 $770.02
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    Sager 7012BKX 1
    • 1 $728.45
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    12BKX Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: HY53VB10DA •HYUNDAI 12BKxB-blt C M O S FAST SR A M ADVANCED INFORMATIDN D E S C R IP T IO N The HY53VB1D0A is a high-speed 131,072 « B-bits C M O S static RAM Fabricated using Hyundai's high performance twin tub C M D S process technology. This high reliability process couplBd with high-speed circuit design techni­


    OCR Scan     		PDF HY53VB10DA 12BKxB-blt HY53VB1D0A HY53VB1DOA 20/25/30/35ns AD-A15 1DOD3-11-MAYM

    Untitled

    Abstract: No abstract text available
    Text: DENSE-PAC 4 Megabit 5V CMOS Flash EEPROM DPZ128X32VT/DPZ128X32VTP MICROSYSTEMS DESCRIPTION: The DPZ128X32VT/VTP is a 4 megabit 5 Volt only C M O S Flash E E P R O M (E le c tric a lly In-System Programmable and Erasable ROM memory) module. The module is built with four 128K x 8 FLASH memory


    OCR Scan     		PDF DPZ128X32VT/DPZ128X32VTP DPZ128X32VT/VTP DPZ128X32VT 250ns 120mA 30A014-52-T D1S31

    9436a

    Abstract: No abstract text available
    Text: ADVANCE MT55L128L18P, MT55L64L32P, MT55L64L36P 2.25Mb ZBT SRAM 3 .3V V od, Selectable Burst Mode FEATURES • • • • • • • • • • • • • • • • • High frequency and 100 percent bus utilization Fast cycle times: 7ns, 7.5ns, 8.5ns and 10ns


    OCR Scan     		PDF 12BKx MT55L128L18P 9436a

    Untitled

    Abstract: No abstract text available
    Text: m EDI5C32128C u EtfCIROMC DC96N& N C 128Kx32 EEPROM 128Kx32CMOS EEPROM Multi-Chip Module Features 128Kx32 bit CMOS The EDI5C32128C is a high performance, four megabit Electrically Eraseable Programmable density EEPROM organized as 128Kx32 bits. The device


    OCR Scan     		PDF DC96N& EDI5C32128C 128Kx32 200ns 128Kx32CMOS EDI5C32128C 128Kx8

    KM736V789T-60

    Abstract: 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L
    Text: MEMORY tCs FUNCTION GUIDE 1. SRAM PRODUCT TREE 1.1.1. Low Power 5.0V Operation SRAM 256Kb» 32KX8 KM62256CI-5/5L KM622S6CL-7/7L KM62256CLE -7/71 KM62256CLI-7/7L KM62256DL-5/5L KM62256DL-7/7L KM62256DLI-7/7L 512Kb» KM68512AL-5/5L 64Kx8 KM88512AL-7/7L KM68S»2ALf-7/7L


    OCR Scan     		PDF 256Kb» 32KX8 KM62256CI-5/5L KM62256CLE KM62256CLI-7/7L KM62256DL-5/5L KM62256DLI-7/7L 512Kb» 64Kx8 KM68512AL-5/5L KM736V789T-60 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE M i n n r i M I 256K x 18/128K x 36 LVTTL, F L O W - T H R O U G H L A T E W R I T E S R A M Dual Clock and Single Clock FEATURES • • • • • • • • • • • • • • • • • Fast cycle tim es 5ns, 6ns and 7ns 256K x 18 or 128K x 36 configurations


    OCR Scan     		PDF 1B/128K IT56L256L18F

    upd 1987

    Abstract: No abstract text available
    Text: t.fc MT28F200B1 FLASH MEMORY m artV o lt a g e FEATURES PIN ASSIGNMENT Top View • Five erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word param eter blocks Two main memory blocks • SmartVoltage Technology (SVT): 3.3V +0.3V o r 5V ±10% Vcc


    OCR Scan     		PDF 16KB/8K-word 110ns MT28F200B1 44-Pin 16-bit upd 1987

    tba150

    Abstract: No abstract text available
    Text: 1M molate X 8 FLASH MEMORY MF81003RKX-12/15/20 Issue 1.3 : Novem ber 1993 ADVANCE PRODUCT INFORMATION S e m ic o n d u c to r Pin Definition 1,048,576 X 8 CMOS FLASH Memory Module Features Flash Eraseable Non-Volatile Memory Module Access Times of 150/200 ns


    OCR Scan     		PDF MF81003RKX-12/15/20 120ns 16sec 128KX8 12BKx8 AO-16* A0-A19 MF81003RKXI-15 tba150

    Untitled

    Abstract: No abstract text available
    Text: W EDI8L32128V £ \ ElfCTROMC 0E9GN& MCI 128Kx32 SRAM 3.3 Vot 128KX32CMOSHigh Speed Static RAM ¡Features The EDI8L32128V is a high speed, 3.3 volt, four megabit 128Kx32 bit CMOS Static Analog SHARC External Memory Solution density Static RAM. The device is available with access


    OCR Scan     		PDF EDI8L32128V 128Kx32 ADSP-21060L ADSP-210621Random MO-47AE) 128KX32CMOSHigh EDI8L32128V EDI8L32128V12AC EDI8L32128V15AC

    EI24

    Abstract: EI-24
    Text: EDI8F24128C W 3 X ELECTRONIC. DESIGNS, INC 128KX24 SRAM Module !28Kx24Static RAM CMOS, High SpeedModrfe Features TTie EDI8F24128C is a high speed 3 megabit Static RAM module organized as 128K words by 24 bits. This module is 128Kx24 bit CMOS Static constructed from threel 28Kx8 Static RAMs in SOJ packages


    OCR Scan     		PDF EDI8F24128C 128KX24 28Kx24Static EDI8F24128C 28Kx8 EDI8F24128C20MZC EDI8F24128C25MZC EDI8F24128C35MZC EI24 EI-24

    DPZ128X32VTP

    Abstract: a13421
    Text: DENSE-PAC MICROSYSTEMS 4 Megabit 5V CMOS Flash EEPROM DPZ128X32VT/DPZ128X32VTP D E SC R IPT IO N : The DPZ128X32VT/VTP is a 4 megabit 5 Volt only C M O S Fla sh E E P R O M (E le c t r ic a lly In-System Programmable and Erasable R O M memory) module. The module is built with four 128Kx 8 FLASH memory


    OCR Scan     		PDF DPZ128X32VT/DPZ128X32VTP DPZ128X32VT/VTP 128Kx DPZ128X32VT 512Kx 256Kx DPZ128X32VTVVTP 16or128Kx32 250ns DPZ128X32VTP a13421

    HM6206

    Abstract: 32Kx64
    Text: SRAMs Cache Synchronous SRAMs P ackage P a rt N um b e r D e n i lt y O r g a n iz a tio n C y c le tim e / A c c e « » tim e (n e ) Max. Key F e a tu re LQ FP HM62C3232 1M 32K x32 9/10/12/15 Pipeline 100 HM62C3232FP-7 1M 32K x32 7 Pipeline 100 HM62C3232FP-8L


    OCR Scan     		PDF HM62C3232 HM62C3232FP-7 HM62C3232FP-8L HM62D3232 HM62D3232FP-7 HM67B3632 HM67S3632 HB66C3264BA HB66D3264BA HB66C6464BA HM6206 32Kx64

    Untitled

    Abstract: No abstract text available
    Text: mosaic 128Kx 32 SRAM Module semiconductor, inc. PUMA 2S4000-45/55 Issue 4.0 : March 1996 Description 4,194,304 bit CMOS High Speed Static RAM The PUMA 2S4000 is a 4Mbit high speed static RAM organised as 128K x 32 in a 66 pin PGA package with access times of 45ns or 55 ns.


    OCR Scan     		PDF PUMA2S4000 MIL-STD-883. 128Kx 2S4000-45/55 2S4000LMB-55 S4000

    DQ05

    Abstract: No abstract text available
    Text: E D I8F 32123C ^ E D I t\iCTÎ!OHC DESIGNS. NC.I 128Kx32 Battery Backed SRAM Module ADVANCED Features 128Kx32 bit CMOS Static Random Access Memory with on-board battery backup • Access Times 70 and 85ns • Master Protected Module Enable • Ni-MH Battery Cell Backup


    OCR Scan     		PDF 32123C 128Kx32 EDI8F32123C 128Kx EDI8F32123C70MMC EDI8F32123C85MMC 80PinSIMM ED8F32123C DQ05

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE M IC R O N B 128K IttMNOLÜGV INC X MT58LC128K32/36D8 32/36 S Y N C B U R S T SR A M 128KX 32/36 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, PIPELINED, SINGLE-CYCLE DESELECT AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • Fast access times: 4.5, 5, 6 and 7ns


    OCR Scan     		PDF MT58LC128K32/36D8 128KX MT58LC128K32/36D6

    KDL3

    Abstract: No abstract text available
    Text: tfc Integrated Devicelëchnotogy Inc PRELIMINARY IDT 7MB6036 128KX 16 SHARED PORT RAM FEATURES: DESCRIPTION: • Fully asynchronous operation from either port The Shared Port RAM provides two ports with separate control, address and Data I/O pins that permit Independent access for


    OCR Scan     		PDF 128KX 7MB6036 S13-103 IDT7MB6036 S13-104 KDL3

    ADA16

    Abstract: A0-A16
    Text: Honeywell Advance Information HC83241 128K X 32 RADIATION-TOLERANT SRAM FEATURES RADIATION OTHER • Total Dose Hardness at Tactical Level • Automatically Detects and Corrects All Single and Double Bit Errors • Neutron Hardness through 1x10,4cnr2 • Full military temperature operation -55°C to 125°C


    OCR Scan     		PDF HC83241 120x100 ADA16 A0-A16

    eprom rom 512k x 16 bits

    Abstract: No abstract text available
    Text: Section 1 >8-Pin Memory Cards — At a Glance P a g * Technology 1-3 1-17 1-19 Mask ROM Mask ROM EPROM 1-39 OTPROM 1-57 SRAM D«vlc« Ace«*a Tim« Emb«dd*d 1C* MB98A5090 250 ns MB834200A x 1 pc 96A5100 250 ns MB834200A x 2 pcs 98A5110 250 ns MB832000 x 8 pcs


    OCR Scan     		PDF MB98A5090 96A5100 98A5110 MB98A5120 98A5130 98A5140 MB98A608A 98A609A 96A610A MB98A6070 eprom rom 512k x 16 bits

    Untitled

    Abstract: No abstract text available
    Text: ^EDI EDI88128C 128Kx8 Monolithic Static Ram EkfCIROMC DESGNS. N C 128Kx8 Monolithic CMOS Static RAM, High Speed Features The EDI88128C is a high speed, high performance, mono­ 128Kx8 bits Monolithic CMOS Static lithic Static RAM organized as 128Kx8 bits.


    OCR Scan     		PDF EDI88128C 128Kx8 100ns EDI88128) EDI88130) EDI88128C EDI88130C

    EDI88128CS45CB

    Abstract: No abstract text available
    Text: E D I8 8 1 2 8 C S ^ E D L 128Kx8 Monolithic ELECTOONC DESIGNS. N C Static Ram F e a tu re s 128Kx8 Monolithic High Speed 128Kx8 bit CMOS Static CMOS Static RAM Random Access Memory • Fast Access Times: 15*,17*, 20,25,35,45, and 55ns The EDI88128CS is a high speed, high performance,


    OCR Scan     		PDF 128Kx8 EDI88128LPS) EDI88128CS 32PinCeramicZ I88128C 12SKx8 EDI88 EDI88128CS45CB