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    12K1 Search Results

    12K1 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    RJE7B18812K1 Amphenol Communications Solutions Modular Jack - High Performance, Input Output Connectors 8P8C, CAT 6A, RA, Shield, with LEDs. Visit Amphenol Communications Solutions
    RJE4848812K1 Amphenol Communications Solutions Modular Jack, Input Output Connectors - Cat5e, Four Port, Low Profile, 8P8C, Right Angle, With Shield, With LEDs Visit Amphenol Communications Solutions
    10151094-1612K13LF Amphenol Communications Solutions DDR4 Memory Module Sockets,Vertical, Surface Mount, 288 Position, 0.85mm (0.0335in) pitch, 30u\\ Gold on Contact Area, Standard Housing and Latch, Metal tab, Without MYLAR Visit Amphenol Communications Solutions
    RJE7148812K1 Amphenol Communications Solutions Modular Jacks, Input Output Connectors, 8P8C, With Shield, With LEDs. Visit Amphenol Communications Solutions
    RJE4E18812K1 Amphenol Communications Solutions Modular Jacks, Input Output Connectors, 8P8C, With Shield, With LEDs. Visit Amphenol Communications Solutions
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    12K1 Price and Stock

    YAGEO Corporation RC1206FR-0712K1L

    RES 12.1K OHM 1% 1/4W 1206
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    DigiKey RC1206FR-0712K1L Digi-Reel 107,310 1
    • 1 $0.1
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    • 100 $0.0173
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    RC1206FR-0712K1L Cut Tape 107,310 1
    • 1 $0.1
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    RC1206FR-0712K1L Reel 105,000 5,000
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    Newark RC1206FR-0712K1L Cut Tape 2,741 1
    • 1 $0.006
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    Bristol Electronics RC1206FR-0712K1L 60,000 148
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    RC1206FR-0712K1L 11,198
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    Avnet Abacus RC1206FR-0712K1L Reel 25,000 20 Weeks 5,000
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    Chip One Stop RC1206FR-0712K1L Cut Tape 4,800
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    New Advantage Corporation RC1206FR-0712K1L 95,000 1
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    Vishay Dale CRCW201012K1FKEF

    RES SMD 12.1K OHM 1% 3/4W 2010
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    DigiKey CRCW201012K1FKEF Digi-Reel 11,219 1
    • 1 $0.18
    • 10 $0.093
    • 100 $0.055
    • 1000 $0.03577
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    YAGEO Corporation RT0805DRE0712K1L

    RES SMD 12.1K OHM 0.5% 1/8W 0805
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    DigiKey RT0805DRE0712K1L Digi-Reel 6,273 1
    • 1 $0.1
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    RT0805DRE0712K1L Cut Tape 6,273 1
    • 1 $0.1
    • 10 $0.037
    • 100 $0.0286
    • 1000 $0.02652
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    RT0805DRE0712K1L Reel 5,000 5,000
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    Avnet Abacus RT0805DRE0712K1L 24 Weeks 5,000
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    SEI Stackpole Electronics Inc RNCF0603DTC12K1

    RES SMD 12.1K OHM 0.5% 1/6W 0603
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    DigiKey RNCF0603DTC12K1 Reel 5,000 5,000
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    NAC RNCF0603DTC12K1 5,000
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    SEI Stackpole Electronics Inc RNCS0603BKE12K1

    RES 12.1K OHM 0.1% 1/16W 0603
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    DigiKey RNCS0603BKE12K1 Cut Tape 2,652 1
    • 1 $0.26
    • 10 $0.185
    • 100 $0.1299
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    RNCS0603BKE12K1 Digi-Reel 2,652 1
    • 1 $0.26
    • 10 $0.185
    • 100 $0.1299
    • 1000 $0.0993
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    RNCS0603BKE12K1 Reel 1,000 1,000
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    • 10000 $0.0625
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    NAC RNCS0603BKE12K1 14,000 1
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    • 10000 $0.18
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    Master Electronics RNCS0603BKE12K1
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    • 10000 $0.077
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    12K1 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    NF 034

    Abstract: IGBT abb datasheets 12K1201
    Text: VCE IC = = 1200 V 100 A IGBT-Die 5SMY 12K1201 Die size: 11.9 x 11.2 mm Doc. No. 5SYA1635-01 Sep 06 • Ultra low loss thin IGBT die • Highly rugged SPT+ design • Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage Symbol Conditions


    Original
    12K1201 5SYA1635-01 CH-5600 NF 034 IGBT abb datasheets 12K1201 PDF

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 1200 V 75 A IGBT-Die 5SMX 12K1262 Die size: 11.0 x 11.0 mm Doc. No. 5SYA 1630-00 Feb. 05 • Low loss, rugged SPT technology • Smooth switching for good EMC • Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage


    Original
    12K1262 CH-5600 PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1323-01 12 01 5SMY 12K1721 IGBT-Die VCE = 1700 V IC = 100 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 Parameter Collector-emitter voltage


    Original
    12K1721 CH-5600 PDF

    76K1280

    Abstract: No abstract text available
    Text: VCE IC = = 1200 V 100 A IGBT-Die 5SMY 12K1280 Die size: 11.9 x 11.2 mm Doc. No. 5SYA 1319-03 04 14 •    Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values


    Original
    12K1280 CH-5600 76K1280 PDF

    ld33b

    Abstract: LD45B RN66 25p80 LD12B
    Text: 120K AP7331-ADJ R101 R102 22K 12K1 E5 C35 C31 C36 C37 10uF 100nF 100nF 100nF 100nF LD81B LD82B GP66 UP PULL DOWN GP66 T81 +1 2 3 4 5 6 7 8 GP32 GP34 GP36 GP38 SW51 GP33 GP35 GP37 GP39 VCC-3.3V _ GP32 GP34 GP36 GP38 VCC-3.3V CN51 GP33 GP35 GP37 GP39 _ VCC-3.3V


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    AP7331-ADJ 220uH 220uF/35V/LESR 100nF MBRS140T3 220pF MC34063A LD43B ld33b LD45B RN66 25p80 LD12B PDF

    5SMX12K1701

    Abstract: No abstract text available
    Text: VRRM = IF = 1700 V 150 A Fast-Diode Die 5SLX 12K1711 Die size: 11.9 x 11.9 mm Doc. No. 5SYA1662-01 Feb. 05 • • • • Fast and soft reverse-recovery Low losses High SOA Passivation: SIPOS Nitride plus Polyimide Maximum rated values 1 Parameter Symbol


    Original
    12K1711 5SYA1662-01 CH-5600 5SMX12K1701 PDF

    12K12

    Abstract: 5SLX12F1200
    Text: VCE IC = = 1200 V 75 A IGBT-Die 5SMX 12K1273 Die size: 11.0 x 11.0 mm Doc. No. 5SYA 1633-00 June 05 • • • • • Low loss, rugged SPT technology Smooth switching for good EMC Minimized gate charge, short delay times Optimized for paralleling Large bondable emitter area


    Original
    12K1273 CH-5600 12K12 5SLX12F1200 PDF

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 1200 V 100 A IGBT-Die 5SMY 12K1280 Die size: 11.9 x 11.2 mm Doc. No. 5SYA 1319-02 Dez 12 •    Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values


    Original
    12K1280 CH-5600 PDF

    12K1280

    Abstract: No abstract text available
    Text: VCE IC = = 1200 V 100 A IGBT-Die 5SMY 12K1280 Die size: 11.9 x 11.2 mm Doc. No. 5SYA 1319-01 Nov 10 • • • • Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values


    Original
    12K1280 CH-5600 12K1280 PDF

    IGBT abb datasheets

    Abstract: 5SMX12K1701 abb 800
    Text: VRRM = IF = 1700 V 150 A Fast-Diode Die 5SLX 12K1711 Die size: 11.9 x 11.9 mm Doc. No. 5SYA1662-01 July 04 • • • • Fast and soft reverse-recovery Low losses Rugged SOA safe operating area Passivation: SIPOS Nitride plus Polyimide Maximum rated values


    Original
    12K1711 5SYA1662-01 CH-5600 IGBT abb datasheets 5SMX12K1701 abb 800 PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1323-02 11 02 5SMY 12K1721 IGBT-Die VCE = 1700 V IC = 100 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values Parameter Collector-emitter voltage


    Original
    12K1721 CH-5600 12K1721 PDF

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 1200 V 100 A IGBT-Die 5SMY 12K1201 Die size: 11.9 x 11.2 mm Doc. No. 5SYA 1635-00 Mar 06 • Ultra low loss thin IGBT die • Highly rugged SPT+ design • Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage Symbol Conditions


    Original
    12K1201 CH-5600 PDF

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 1200 V 75 A IGBT-Die 5SMX 12K1280 PRELIMINARY Die size: 11.0 x 11.0 mm Doc. No. 5SYA1308-01 Aug 08 • • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: Silicon Nitride plus Polyimide


    Original
    12K1280 5SYA1308-01 CH-5600 PDF

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 1200 V 75 A IGBT-Die 5SMX 12K1274 Die size: 11.0 x 11.0 mm Doc. No. 5SYA 1303-00 Dec 07 • • • • • Low loss, rugged SPT technology Smooth switching for good EMC Minimized gate charge, short delay times Optimized for paralleling Large bondable emitter area


    Original
    12K1274 CH-5600 PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet, Doc. No. 5SYA 1323-03 04 14 5SMY 12K1721 IGBT-Die VCE = 1700 V IC = 100 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 Parameter Collector-emitter voltage


    Original
    12K1721 CH-5600 PDF

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 1200 V 75 A IGBT-Die 5SMX 12K1280 Die size: 11.0 x 11.0 mm Doc. No. 5SYA1308-03 04 14 •     Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Optimized for high DC-link voltage applications


    Original
    12K1280 5SYA1308-03 CH-5600 PDF

    MP05288.01

    Abstract: GPS 634R
    Text: Thin Film Chip Resistor 0805 Features • • • • Thin Film NiCr resistance element Precision tolerance from ±0.1% Extremly low TCR from ±5 to ±50 PPM/°C Special packaging 1,000 pcs. / 2,000 pcs. per reel available Application Medical equipment


    Original
    element14 MP05288.01 GPS 634R PDF

    R1008-QB

    Abstract: QFN 7X7 free circuit diagram of rf id MTTF bav99 12k1 r1008 5R62 BAV99 MMBT3904 MMBT3906
    Text: 35.0-45.0 GHz GaAs Receiver QFN, 7x7 mm R1008-QB March 2007 - Rev 21-Mar-07 Features Sub-harmonic Receiver Integrated LNA, Image Reject Mixer, LO Doubler/Buffer +2.0 dBm LO Drive Level 8.0 dB Conversion Gain 4.0 dB NF +5.0 dBm Input Third Order Intercept IP3


    Original
    R1008-QB 21-Mar-07 XR1008-QB R1008-QB QFN 7X7 free circuit diagram of rf id MTTF bav99 12k1 r1008 5R62 BAV99 MMBT3904 MMBT3906 PDF

    BELLCORE FSK

    Abstract: caller id converter dtmf DS5157 tda 1204
    Text: CMOS MT88E43B Extended Voltage Calling Number Preliminary Information Identification Circuit 2 DS5157 Features • • • • • • • • • • • Compatible with: • British Telecom BT SIN227 & SIN242 • U.K.’s Cable Communications Association


    Original
    MT88E43B DS5157 SIN227 SIN242 E/312 GR-30-CORE TR-NWT-000030) SR-TSV-002476 -40dBV MT88E43B BELLCORE FSK caller id converter dtmf DS5157 tda 1204 PDF

    MT88E43AS

    Abstract: block diagram of ic 555 as fsk generator MT8841 bt
    Text: CMOS MT88E43 Extended Voltage Calling Number Identification Circuit 2 Features • ISSUE 3 Compatible with: Ordering Information MT88E43AE 24 Pin Plastic DIP 0.6 inch package only MT88E43AS 24 Pin SOIC -40 °C to +85 °C • • • British Telecom (BT) SIN227 & SIN242


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    MT88E43 MT88E43AE MT88E43AS SIN227 SIN242 E/312 GR-30-CORE TR-NWT-000030) SR-TSV-002476 -40dBV block diagram of ic 555 as fsk generator MT8841 bt PDF

    Arcol wirewound resistor

    Abstract: TI002 Arcol HS50 NHS300 HS75 1K F hs50 100 1 TI005 TI006 HS300 ARCOL 19K36
    Text: HEATSINK RANGE TECHNICAL INFORMATION LAST REVISED 01 NOV 2001 CONTENTS Critical Resistance TI002 Critical Resistance TI005 Critical Voltage TI002 Definition of Terms TI005 Derating Curve HS TI007 Electromagnetic Compatibility (EMC) TI009 Heatsink Selection


    Original
    TI002 TI005 TI007 TI009 TI001 TI003 TI006 Arcol wirewound resistor TI002 Arcol HS50 NHS300 HS75 1K F hs50 100 1 TI005 TI006 HS300 ARCOL 19K36 PDF

    Untitled

    Abstract: No abstract text available
    Text: Low Power PCM Repeaters ANALOG DEVICES □ RPT-86/RPT-87 FEATURES • • • • • w ithT I 1,544Mbit/s , CEPT/E1 (2.048Mbit/s), and T1C (3.152Mbit/s) systems. Low Power Consumption (56mW) Single-Supply Operation Wide Data Rate Range <100kbit/s to >3Mbit/s


    OCR Scan
    RPT-86/RPT-87 544Mbit/s) 048Mbit/s) 152Mbit/s) 100kbit/s RPT-87) RPT-86/RPT-87 RPT-86 RPT-87 RPT-86/87 PDF

    caller id converter dtmf to fsk

    Abstract: V23 FSK Japan ring oscillator
    Text: M ITEL Calling Number Identification Circuit Advance Information CNIC1.1 S E M IC O N D U C T O R Features • D S5035_ ISSUE 3_ N ovem ber 1998 1200 baud Bell 202 and CCITT V.23 Frequency Shift Keying (FSK) demodulation


    OCR Scan
    GR-30-CORE, SR-TSV-002476, TIA/EIA-716 MT88E43 MT8841 MT88E41 MT88E39 S5035_ MT88E39 7APR95 caller id converter dtmf to fsk V23 FSK Japan ring oscillator PDF

    59012 h 331

    Abstract: No abstract text available
    Text: r to 61 41 65 45 = = = = 1% 1% 5% 5% Tol. Tol. Tol. Tol. on a miniReel in a miniBag on a miniReel in a miniBag Size Code 2 3 5 6 = = = = 0402 0603 0805 1206 Dimensions L x W : 7 = 1210 8 = 2010 9 = 2512 C ase Resistor value Code in £1 — { Use code from product chart)


    OCR Scan
    22M12 10M12 22M12 59012 h 331 PDF