tsop i 12mmx20mm
Abstract: Utron SRAM Utron SRAM 512K X
Text: UTRON Rev. 1.1 UT65L168 E /UT65L168(I) 512K X 16 BITS LOW POWER PSEUDO SRAM REVISION HISTORY REVISION Rev. 1.0 Rev. 1.1 DESCRIPTION Original. 1. Delete Partial refresh function 2. Add Package : 48-pin 12mmX20mm TSOP-I UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
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UT65L168
/UT65L168
48-pin
12mmX20mm
P80094
608-bit
UT65L168BS-60LLI
tsop i 12mmx20mm
Utron SRAM
Utron SRAM 512K X
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7040K
Abstract: No abstract text available
Text: UTRON UT65L1616 E /UT65L1616(I) 1M X 16 BITS LOW POWER PSEUDO SRAM Rev. 1.2 REVISION HISTORY REVISION DESCRIPTION Draft Date Rev. 1.0 Original. Apr 15, 2003 Rev. 1.1 Delete Partial refresh function Aug 06,2003 Rev. 1.2 Add Package : 48-pin 12mmX20mm TSOP-I
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UT65L1616
/UT65L1616
48-pin
12mmX20mm
P80080
216-bit
UT65L1616BS-60LLI
7040K
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Untitled
Abstract: No abstract text available
Text: LY61L102416A 1024K X 16 BIT HIGH SPEED CMOS SRAM Rev. 1.5 REVISION HISTORY Revision Description Issue Date Rev. 1.0 Rev. 1.1 Rev. 1.2 Initial Issued Add 48 pin BGA package type. 1.“CE# ≧VCC - 0.2V” revised as ”CE# ≦0.2” for TEST CONDITION of Average Operating Power supply Current
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LY61L102416A
1024K
Page11
w416ALL-10IT
LY61L102416ALL-10I
LY61L102416ALL-10T
LY61L102416ALL-10
LY61L102416AGL-12IT
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xxxxxxxxx
Abstract: No abstract text available
Text: LY62L102616A Rev. 1.1 16M Bits 2Mx8 / 1Mx16 Switchable LOW POWER CMOS SRAM REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Description Initial Issue Correct typo error on the column “UB#”, “LB#” of truth table for row “Byte Read” “Byte Write” and “Output Disable” at
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LY62L102616A
1Mx16
LY62L102616ALL-55SLT
LY62L102616ALL-55SL
LY62L102616ALL-70SLIT
xxxxxxxxx
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Untitled
Abstract: No abstract text available
Text: LY62L102516 1024K X 16 BIT LOW POWER CMOS SRAM Rev. 1.0 REVISION HISTORY Revision Rev. 0.1 Rev. 0.2 Rev. 0.3 Rev. 0.4 Rev. 1.0 Description Initial Issue Added SL Spec. Added ISB1/IDR values when TA = 25℃ and TA = 40℃ Revised FEATURES & ORDERING INFORMATION
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LY62L102516
1024K
LY62L102516GL-55SLT
LY62L102516GL-55SL
LY62L102516GL-70LLIT
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tsop i 12mmx20mm
Abstract: MX23J12840 MX23J12840TC-50 MX23J12840TC-50G MX23J12840TI-50G xtrarom
Text: MX23J12840 128M-BIT NAND INTERFACE XtraROMTM FEATURES • Word organization - 16,777,216 + 1,048,576Note by 8 bits • Page size - (512 + 16Note) by 8 bits • Block size - (16,384 + 512Note) by 8 bits Note : Underlined parts are redundancy and fixed to
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MX23J12840
128M-BIT
576Note)
16Note)
512Note)
48-pin
12mmx20mm)
MacronixCT/28/2005
tsop i 12mmx20mm
MX23J12840
MX23J12840TC-50
MX23J12840TC-50G
MX23J12840TI-50G
xtrarom
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TSOP1-48
Abstract: BS616LV1622
Text: BSI Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable FEATURES BS616LV1622 • Fully static operation • Data retention supply voltage as low as 1.5V • Easy expansion with CE1, CE2 and OE options • I/O Configuration x8/x16 selectable by CIO, LB and UB pin
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BS616LV1622
x8/x16
113mA
115mA
BS616LV1622
-40oC
TSOP1-48
12mmx20mm)
TSOP1-48
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MX23L256
Abstract: No abstract text available
Text: PRELIMINARY MX23L25640 256M-BIT NAND INTERFACE MASK ROM DESCRIPTION The MX23L25640 is a 256 Mbit NAND interface programmable mask read-only memory that operates with a single power supply. The memory organization consists of 512 + 16 (Redundancy bytes x 32 pages x
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MX23L25640
256M-BIT
MX23L25640
48-pin
44-pin
576Note
16Note)
512Note)
MX23L256
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MX23L12840 128M-BIT NAND INTERFACE MASK ROM DESCRIPTION The MX23L12840 is a 128 Mbit NAND interface programmable mask read-only memory that operates with a single power supply. The memory organization consists of 512 + 16 (Redundancy bytes x 32 pages x
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MX23L12840
128M-BIT
MX23L12840
48-pin
44-pin
576Note
16Note)
512Note)
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MX23L12840
Abstract: No abstract text available
Text: PRELIMINARY MX23L12840 128M-BIT NAND INTERFACE MASK ROM DESCRIPTION The MX23L12840 is a 128 Mbit NAND interface programmable mask read-only memory that operates with a single power supply. The memory organization consists of 512 + 16 (Redundancy bytes x 32 pages x
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MX23L12840
128M-BIT
MX23L12840
48-pin
44-pin
576Note
16Note)
512Note)
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PDF
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GPR27P512A
Abstract: No abstract text available
Text: GPR27P512A 512M-BIT NAND INTERFACE OTP Aug. 05, 2009 Version 1.3 GENERALPLUS TECHNOLOGY INC. reserves the right to change this documentation without prior notice. TECHNOLOGY INC. is believed to be accurate and reliable. Information provided by GENERALPLUS
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GPR27P512A
512M-BIT
GPR27P512A
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TC55VBM316ATGN55
Abstract: TMPR3903AF TMPR3916F TC55VBM316ASGN55 32X8 sram TC90A70F ARM926EJ-S TCM5063T ARM926EJ TC59LM806CFT
Text: e y eeeyyyeee eeye 東芝半導体情報誌アイ 2002年2月号 英ARM社のARM926EJ-Sマイクロプロセッサ・コアのライセンスを取得 当社は英ARM社から ARM926EJ-STMコアのライセンスを取得しました。これにより当社は、
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ARMARM926EJ-S
ARM926EJ-STM
ARM926EJ-S
ARM946E-S
7-3405FAX.
TC55VBM316ATGN55
TMPR3903AF
TMPR3916F
TC55VBM316ASGN55
32X8 sram
TC90A70F
ARM926EJ-S
TCM5063T
ARM926EJ
TC59LM806CFT
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SST39WF160x
Abstract: AM29F SST25VF016B tsop i 12mmx20mm 48-WFBGA SST38VF640x TSOP 28 SPI memory Package flash FLASH CROSS sst39vf040 WFBGA-48 48TSOP
Text: Silicon Storage Technology, Inc. NOR Flash Cross Reference Guide 1.8V, 3V, 5V www.SST.com Comparison Guide Spansion Company Density Spansion SST SST AM29F SST39SF S29AL S29GL SST39VF SST38VF S29AS SST39WF 1 ~ 32 Mb 2 ~ 16 Mb 1 ~ 4 Mb 4 ~ 32 Mb 16 Mb ~ 1Gb
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AM29F
SST39SF
S29AL
S29GL
SST39VF
SST38VF
S29AS
SST39WF
SST39WF160x
AM29F
SST25VF016B
tsop i 12mmx20mm
48-WFBGA
SST38VF640x
TSOP 28 SPI memory Package flash
FLASH CROSS sst39vf040
WFBGA-48
48TSOP
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Untitled
Abstract: No abstract text available
Text: BSI Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable FEATURES BS616LV1622 • Fully static operation • Data retention supply voltage as low as 1.5V • Easy expansion with CE1, CE2 and OE options • I/O Configuration x8/x16 selectable by CIO, LB and UB pin
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BS616LV1622
113mA
115mA
operationS616LV1622
-40oC
BS616LV1622
TSOP1-48
12mmx20mm)
TSOP1-48
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MX23L25640 256M-BIT NAND INTERFACE MASK ROM DESCRIPTION The MX23L25640 is a 256 Mbit NAND interface programmable mask read-only memory that operates with a single power supply. The memory organization consists of 512 + 16 (Redundancy bytes x 32 pages x
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MX23L25640
256M-BIT
MX23L25640
48-pin
44-pin
576Note
16Note)
512Note)
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L24002
Abstract: NAND "read disturb" 1GB Toshiba 512 NAND MLC FLASH BGA PC133 registered reference design CMOS 0.8mm process cross Lithium battery CR2025 sony M2V28S30AVP M5M51008CFP
Text: Future On Chips MITSUBISHI SEMICONDUCTORS MITSUBISHI ELECTRIC CORPORATION ULSI Memory Memory Series Series ULSI RAM/MCP/FLASH New Data Package http://www.mitsubishichips.com Jul. 2000 MITSUBISHI ELECTRIC L-11002-01 CONTENTS General Business Operation Network and Production Facilities
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L-11002-01
64MDRAM
64MSDRAM
128MSDRAM
256MSDRAM
144MRDRAM
L24002
NAND "read disturb" 1GB
Toshiba 512 NAND MLC FLASH BGA
PC133 registered reference design
CMOS 0.8mm process cross
Lithium battery CR2025 sony
M2V28S30AVP
M5M51008CFP
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xxxxxxxxx
Abstract: No abstract text available
Text: LY62L102616 1024K X 16 BIT LOW POWER CMOS SRAM Rev. 1.0 REVISION HISTORY Revision Rev. 0.1 Rev. 0.2 Rev. 0.3 Rev. 1.0 Description Initial Issue Revised FEATURES & ORDERING INFORMATION Lead free and green package available to Green package available Added packing type in ORDERING INFORMATION
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LY62L102616
1024K
102616LL-70LLI
LY62L102616LL-55LLT
LY62L102616LL-55LL
LY62L102616LL-70LLIT
xxxxxxxxx
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MX23L25640 256M-BIT NAND INTERFACE MASK ROM DESCRIPTION The MX23L25640 is a 256 Mbit NAND interface programmable mask read-only memory that operates with a single power supply. The memory organization consists of 512 + 16 (Redundancy bytes x 32 pages x
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MX23L25640
256M-BIT
MX23L25640
48-pin
44-pin
576Note
16Note)
512Note)
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PDF
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Untitled
Abstract: No abstract text available
Text: MX23J12840 128M-BIT NAND INTERFACE XtraROMTM FEATURES • Word organization - 16,777,216 + 1,048,576Note by 8 bits • Page size - (512 + 16Note) by 8 bits • Block size - (16,384 + 512Note) by 8 bits Note : Underlined parts are redundancy and fixed to
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MX23J12840
128M-BIT
576Note)
16Note)
512Note)
48-pin
12mmx20mm)
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SST32HF162
Abstract: SST32HF164 SST32HF202 SST32HF402 SST32HF802 LFBGA48 LFBGA-48 128Kx16
Text: Product Brief January 2002 ComboMemory TM Multi-Purpose Flash + SRAM SST32HF Series SST ComboMemory Advantages: Features ∆ Flash ∆ Integrated Flash and SRAM for Small Form Factor Design –Superior Reliability –Small Sector –Fast Erase –Low Power Consumption
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SST32HF
SST32HF202:
SST32HF402:
SST32HF802:
15-DQ8
SST32HF162
SST32HF164
SST32HF202
SST32HF402
SST32HF802
LFBGA48
LFBGA-48
128Kx16
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Untitled
Abstract: No abstract text available
Text: AS7C316096A 2048K X 8 BIT HIGH SPEED CMOS SRAM Rev. 1.0 REVISION HISTORY Revision Rev. 1.0 Description Initial Issued Issue Date Oct. 26. 2012 Alliance Memory, Inc. reserves the rights to change the specifications and products without notice. 551 Taylor Way, San Carlos, CA 94070
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AS7C316096A
2048K
48-pin
12mmx20mm)
AS7C316096A
-10TIN
-10TINTR
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SST25VF128
Abstract: SST25VF128C soic-8 200mil TSOP32 FOOTPRINT footprint WSON-8 SST12LP15A TSOP32 8 X 14 FOOTPRINT BIOS 32 Pin SST39SF040 SST25VF080B BIOS electronic clock on breadboard
Text: Headquartered in Sunnyvale, California, SST designs, manufactures and markets a diversified range of memory and non-memory products for high volume applications in the digital consumer, networking, wireless communications and Internet computing markets. Leveraging its proprietary, patented SuperFlash
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BS616LV1625
Abstract: BS616LV1625TC BS616LV1625TI TSOP1-48
Text: Preliminary BSI Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable BS616LV1625 FEATURES DESCRIPTION • Vcc operation voltage : 4.5 ~ 5.5V • Very low power consumption : Vcc = 5.0V C-grade: 113mA @55ns operating current I -grade: 115mA (@55ns) operating current
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BS616LV1625
113mA
115mA
x8/x16
BS61e
R0201-BS616LV1625
-40oC
TSOP1-48
BS616LV1625
BS616LV1625TC
BS616LV1625TI
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tsop i 12mmx20mm
Abstract: xtrarom MX23J25640TI-50G load cell amplifier MX23J25640 MX23J25640TC-50 MX23J25640TC-50G
Text: MX23J25640 256M-BIT NAND INTERFACE XtraROMTM FEATURES • Word organization - 33,554,432 + 2,097,152Note by 8 bits • Page size - (512 + 16Note) by 8 bits • Block size - (16,384 + 512Note) by 8 bits Note : Underlined parts are redundancy and fixed to
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MX23J25640
256M-BIT
152Note)
16Note)
512Note)
48-pin
12mmx20mm)
MacronixCT/28/2005
tsop i 12mmx20mm
xtrarom
MX23J25640TI-50G
load cell amplifier
MX23J25640
MX23J25640TC-50
MX23J25640TC-50G
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