30N60A4D
Abstract: TA49373 30N60A4 HGTG30N60A4D TA49345 ICE 280 TA49343 30N60A
Text: HGTG30N60A4D Data Sheet January 2000 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input
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HGTG30N60A4D
HGTG30N60A4D
150oC.
TA49343.
TA49373.
30N60A4D
TA49373
30N60A4
TA49345
ICE 280
TA49343
30N60A
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30N60A4D
Abstract: No abstract text available
Text: HGTG30N60A4D Data Sheet September 2004 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input
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HGTG30N60A4D
HGTG30N60A4D
150oC.
TA49343.
TA49373.
30N60A4D
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30n60a4d
Abstract: 30n60a4 HGTG30N60A4D TA49373 HGTG*N60A4D LD26 TA49343 TA49345
Text: HGTG30N60A4D Data Sheet September 2004 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input
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HGTG30N60A4D
HGTG30N60A4D
150oC.
TA49343.
TA49373.
30n60a4d
30n60a4
TA49373
HGTG*N60A4D
LD26
TA49343
TA49345
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30N60A4
Abstract: 30N60A4D HGTG*N60A4D 30n60 hgtp30n60a4 hgtg30n60a4d TA49373 30N60A HGTP30N60A4D TA49345
Text: HGTG30N60A4D Data Sheet January 2000 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input
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HGTG30N60A4D
HGTG30N60A4D
150oC.
TA49343.
TA49373.
30N60A4
30N60A4D
HGTG*N60A4D
30n60
hgtp30n60a4
TA49373
30N60A
HGTP30N60A4D
TA49345
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30n60a4d
Abstract: 30N60A4 TA49373 hgtp30n60a4 TA49343 HGTG30N60A4D LD26 TA49345 HGTG*N60A4D
Text: HGTG30N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input
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HGTG30N60A4D
HGTG30N60A4D
150oC.
TA49343.
TA49373.
30n60a4d
30N60A4
TA49373
hgtp30n60a4
TA49343
LD26
TA49345
HGTG*N60A4D
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30N60A4D
Abstract: mj 1504 transistor equivalent 30N60A4 HGT1N30N60A4D 30n60* 227 transistor mj 1504 transistors mj 1504 TA49373
Text: HGT1N30N60A4D 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode General Description Features The HGT1N30N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFETs and a bipolar transistor. These devices have the high input impedance of a MOSFET and the
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HGT1N30N60A4D
HGT1N30N60A4D
150oC.
TA49345.
100kHz
30N60A4D
mj 1504 transistor equivalent
30N60A4
30n60* 227
transistor mj 1504
transistors mj 1504
TA49373
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30n60a4d
Abstract: mj 1504 transistor equivalent TA49345 HGT1N30N60A4D hyperfast diode reference guide TA49373 30n60* 227 30N60A4 LD26
Text: HGT1N30N60A4D 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode General Description Features The HGT1N30N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFETs and a bipolar transistor. These devices have the high input impedance of a MOSFET and the
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HGT1N30N60A4D
HGT1N30N60A4D
150oC.
100kHz
30n60a4d
mj 1504 transistor equivalent
TA49345
hyperfast diode reference guide
TA49373
30n60* 227
30N60A4
LD26
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30n60a4d
Abstract: 30N60A4 TA49345 30N60A 30n60* 227 HGT1N30N60A4D LD26 TA49373 SOT227B
Text: HGT1N30N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT1N30N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFETs and a bipolar transistor. These devices have the high input
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HGT1N30N60A4D
HGT1N30N60A4D
150oC.
100kHz
30n60a4d
30N60A4
TA49345
30N60A
30n60* 227
LD26
TA49373
SOT227B
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g30n60a4
Abstract: g30n60a IGBT G30N60A4 TA49343 G30N60A4 transistor g30n60 12V 30A diode HGTG30N60A4 TA49373 ICE 280
Text: HGTG30N60A4 Data Sheet January 2000 File Number 600V, SMPS Series N-Channel IGBT Features The HGTG30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a
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HGTG30N60A4
HGTG30N60A4
150oC.
100kHz
200kHz
125oC
g30n60a4
g30n60a
IGBT G30N60A4
TA49343
G30N60A4 transistor
g30n60
12V 30A diode
TA49373
ICE 280
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G30N60A4
Abstract: HGTG30N60A4
Text: HGTG30N60A4 Data Sheet September 2004 600V, SMPS Series N-Channel IGBT Features The HGTG30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar
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HGTG30N60A4
HGTG30N60A4
150oC.
100kHz
200kHz
125oC
G30N60A4
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G30N60A4
Abstract: G30N60A G30N60 IGBT G30N60A4 TA49343 TA49373 HGTG30N60A4 G30N60A4 transistor LD26
Text: HGTG30N60A4 Data Sheet January 2000 File Number 600V, SMPS Series N-Channel IGBT Features The HGTG30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a
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HGTG30N60A4
HGTG30N60A4
150oC.
100kHz
200kHz
125oC
G30N60A4
G30N60A
G30N60
IGBT G30N60A4
TA49343
TA49373
G30N60A4 transistor
LD26
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g30n60a4
Abstract: IGBT G30N60A4 G30N60A HGTG30N60A4 TA49343 G30N60A4 transistor LD26 TA49373
Text: HGTG30N60A4 Data Sheet December 2001 600V, SMPS Series N-Channel IGBT Features The HGTG30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar
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HGTG30N60A4
HGTG30N60A4
150oC.
100kHz
200kHz
125oC
g30n60a4
IGBT G30N60A4
G30N60A
TA49343
G30N60A4 transistor
LD26
TA49373
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g30n60a4
Abstract: g30n60 IGBT G30N60A4 G30N60A4 transistor G30N60A HGTG30N60A4 LD26 TA49343 TA49373
Text: HGTG30N60A4 Data Sheet September 2004 600V, SMPS Series N-Channel IGBT Features The HGTG30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar
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HGTG30N60A4
HGTG30N60A4
150oC.
100kHz
200kHz
125oC
g30n60a4
g30n60
IGBT G30N60A4
G30N60A4 transistor
G30N60A
LD26
TA49343
TA49373
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G30N60a4
Abstract: G30N60A IGBT G30N60A4 G30N60 TA49343 G30N60A4 transistor HGTG30N60A4 HGTP30N60A4D ICE 280 TA49373
Text: HGTG30N60A4 Data Sheet August 2003 File Number 600V, SMPS Series N-Channel IGBT Features The HGTG30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a
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HGTG30N60A4
HGTG30N60A4
150oC.
100kHz
200kHz
125oC
G30N60a4
G30N60A
IGBT G30N60A4
G30N60
TA49343
G30N60A4 transistor
HGTP30N60A4D
ICE 280
TA49373
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J 6920 FET
Abstract: igbt 50V 420A IRFPS30N60K
Text: PD- 94417 IRFPS30N60K SMPS MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching HEXFET Power MOSFET VDSS RDS(on) typ. ID 160mΩ 30A 600V Benefits l Low Gate Charge Qg results in Simple Drive Requirement
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IRFPS30N60K
Super-247TM
5M-1994.
O-274AA
J 6920 FET
igbt 50V 420A
IRFPS30N60K
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mJ 6920
Abstract: mosfet 600V 30A IRFPS30N60K IRFPS37N50A
Text: PD- 94417A IRFPS30N60K SMPS MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching HEXFET Power MOSFET VDSS RDS(on) typ. ID 160mΩ 30A 600V Benefits l Low Gate Charge Qg results in Simple Drive Requirement
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4417A
IRFPS30N60K
Super-247TM
O-274AA
IRFPS37N50A
IRFPS37N50A
mJ 6920
mosfet 600V 30A
IRFPS30N60K
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mosfet 600V 30A
Abstract: IRFPS37N50A power mosfet 600v mJ 6920 247t
Text: PD- 95906 SMPS MOSFET IRFPS30N60KPbF HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l Lead-Free VDSS RDS(on) typ. ID 160mΩ 30A 600V Benefits l Low Gate Charge Qg results in Simple
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IRFPS30N60KPbF
Super-247TM
12-Mar-07
mosfet 600V 30A
IRFPS37N50A
power mosfet 600v
mJ 6920
247t
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G30N60A4
Abstract: HGTG30N60A4 IGBT G30N60A4 g30n60a smart ups 750 circuit g30n60 247A03
Text: HGTG30N60A4 Data Sheet April 2013 600V SMPS IGBT Features The HGTG30N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high
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HGTG30N60A4
HGTG30N60A4
TA49343.
O-247
G30N60A4
G30N60A4
IGBT G30N60A4
g30n60a
smart ups 750 circuit
g30n60
247A03
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Untitled
Abstract: No abstract text available
Text: PD- 95906 SMPS MOSFET IRFPS30N60KPbF HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l Lead-Free VDSS RDS(on) typ. ID 160mΩ 30A 600V Benefits l Low Gate Charge Qg results in Simple
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IRFPS30N60KPbF
Super-247â
08-Mar-07
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Untitled
Abstract: No abstract text available
Text: PD- 94417A IRFPS30N60K SMPS MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching HEXFET Power MOSFET VDSS RDS(on) typ. ID 160mΩ 30A 600V Benefits l Low Gate Charge Qg results in Simple Drive Requirement
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4417A
IRFPS30N60K
Super-247â
08-Mar-07
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mosfet 600V 30A
Abstract: IRFPS30N60K IRFPS37N50A
Text: PD- 94417A IRFPS30N60K SMPS MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching HEXFET Power MOSFET VDSS RDS(on) typ. ID 160mΩ 30A 600V Benefits l Low Gate Charge Qg results in Simple Drive Requirement
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4417A
IRFPS30N60K
Super-247TM
12-Mar-07
mosfet 600V 30A
IRFPS30N60K
IRFPS37N50A
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Untitled
Abstract: No abstract text available
Text: PD - 94042A IRFZ34V HEXFET Power MOSFET Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description l D VDSS = 60V RDS on = 28mΩ
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4042A
IRFZ34V
O-220
O-220AB
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smps 48v 12v
Abstract: No abstract text available
Text: PD - 94868A IRFZ34VPbF l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Optimized for SMPS Applications Lead-Free HEXFET Power MOSFET D VDSS = 60V RDS on = 28mΩ
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4868A
IRFZ34VPbF
O-220inches)
O-220AB
smps 48v 12v
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f1010
Abstract: No abstract text available
Text: PD - 94868 IRFZ34VPbF l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Optimized for SMPS Applications Lead-Free HEXFET Power MOSFET D VDSS = 60V RDS on = 28mΩ
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IRFZ34VPbF
O-220
O-220AB.
O-220AB
f1010
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