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    12V IGBT 20A Search Results

    12V IGBT 20A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    12V IGBT 20A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    thyristor inverter

    Abstract: dc to ac inverter by thyristor thyristor inverter circuits Gate Turn-off Thyristor 600V 20A 300V switching thyristor 600v 20a IGBT INVERTER 1A 12V thyristor 12V it 1A thyristor inverter schematics
    Text: 7MBR20SC060 IGBT Modules PIM/Built-in converter with thyristor and brake S series 600V / 20A / PIM Features • Low VCE(sat) · Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motor Drive


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    7MBR20SC060 thyristor inverter dc to ac inverter by thyristor thyristor inverter circuits Gate Turn-off Thyristor 600V 20A 300V switching thyristor 600v 20a IGBT INVERTER 1A 12V thyristor 12V it 1A thyristor inverter schematics PDF

    thyristor inverter

    Abstract: dc to ac inverter by thyristor sine wave inverter DIODE MARKING GU INVERTER 1A 12V thyristor inverter circuits dc ac inverter schematic igbt Emitter Turn-Off thyristor 300V switching thyristor Gate Turn-off Thyristor 600V 20A
    Text: 7MBR20SC060 IGBT Modules PIM/Built-in converter with thyristor and brake S series 600V / 20A / PIM Features • Low VCE(sat) · Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motor Drive


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    7MBR20SC060 thyristor inverter dc to ac inverter by thyristor sine wave inverter DIODE MARKING GU INVERTER 1A 12V thyristor inverter circuits dc ac inverter schematic igbt Emitter Turn-Off thyristor 300V switching thyristor Gate Turn-off Thyristor 600V 20A PDF

    THYRISTOR 1A 300V

    Abstract: design sine wave power inverter Gate Turn-off Thyristor 600V 20A thyristor 12V it 1A 7MBR20SC060
    Text: 7MBR20SC060 IGBT Modules PIM/Built-in converter with thyristor and brake S series 600V / 20A / PIM Features • Low VCE(sat) · Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motor Drive


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    7MBR20SC060 THYRISTOR 1A 300V design sine wave power inverter Gate Turn-off Thyristor 600V 20A thyristor 12V it 1A 7MBR20SC060 PDF

    Untitled

    Abstract: No abstract text available
    Text: FGA90N33AT tm 330V, 90A PDP Trench IGBT Features General Description • High current capability • Low saturation voltage: VCE sat =1.1V @ IC = 20A • High input impedance Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.


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    FGA90N33AT FGA90N33AT PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94545C IRGB8B60K IRGS8B60K IRGSL8B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. VCES = 600V IC = 20A, TC=100°C


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    94545C IRGB8B60K IRGS8B60K IRGSL8B60K O-220AB O-262 AN-994. PDF

    C-150

    Abstract: IRF1010 IRF530S IRGB8B60K IRGS8B60K IRGSL8B60K TO-220AB transistor package 11mH
    Text: PD - 94545C IRGB8B60K IRGS8B60K IRGSL8B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. VCES = 600V IC = 20A, TC=100°C


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    94545C IRGB8B60K IRGS8B60K IRGSL8B60K O-220AB O-262 O-220AB C-150 IRF1010 IRF530S IRGB8B60K IRGS8B60K IRGSL8B60K TO-220AB transistor package 11mH PDF

    C-150

    Abstract: IRF1010 IRF530S IRGB8B60K IRGS8B60K IRGSL8B60K
    Text: PD - 94545C IRGB8B60K IRGS8B60K IRGSL8B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. VCES = 600V IC = 20A, TC=100°C


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    94545C IRGB8B60K IRGS8B60K IRGSL8B60K O-220AB O-262 AN-994. C-150 IRF1010 IRF530S IRGB8B60K IRGS8B60K IRGSL8B60K PDF

    FGA20N120FTD

    Abstract: No abstract text available
    Text: FGA20N120FTD tm 1200V, 20A Trench IGBT Features • Field stop trench technology • High speed switching • Low saturation voltage: VCE sat =1.6V @ IC = 20A • High input impedance • RoHS compliant General Description Using advanced field stop trench technology, Fairchild’s 1200V


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    FGA20N120FTD FGA20N120FTD PDF

    FGA20N120

    Abstract: FGA20N120FTDTU 1200v 20a IGBT 600v 20a IGBT igbt 1200V 20A FGA20N120FTD igbt 20A 1200v 12v igbt 20a
    Text: FGA20N120FTD tm 1200V, 20A Trench IGBT Features • Field stop trench technology General Description • High speed switching Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche


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    FGA20N120FTD FGA20N120FTD FGA20N120 FGA20N120FTDTU 1200v 20a IGBT 600v 20a IGBT igbt 1200V 20A igbt 20A 1200v 12v igbt 20a PDF

    igbt 400V 20A

    Abstract: 600v 20a IGBT fgp20n60ufd 400v 20A ultra fast recovery diode FGP20N60UFDTU igbt 600V 20a 12v igbt 20a SMPS 30v 20a
    Text: FGP20N60UFD tm 600V, 20A Field Stop IGBT Features General Description • High current capability Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low conduction and switching losses are essential.


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    FGP20N60UFD O-220 FGP20N60UFD igbt 400V 20A 600v 20a IGBT 400v 20A ultra fast recovery diode FGP20N60UFDTU igbt 600V 20a 12v igbt 20a SMPS 30v 20a PDF

    Untitled

    Abstract: No abstract text available
    Text: FGH20N60SFD tm 600V, 20A Field Stop IGBT Features General Description • High current capability • Low saturation voltage: VCE sat =2.2V @ IC = 20A • High input impedance Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Induction


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    FGH20N60SFD FGH20N60SFD PDF

    Untitled

    Abstract: No abstract text available
    Text: FGP20N60UFD tm 600V, 20A Field Stop IGBT Features General Description • High current capability • Low saturation voltage: VCE sat =1.8V @ IC = 20A • High input impedance • Fast switching Using Novel Field Stop IGBT Technology, Fairchild’s new series


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    FGP20N60UFD O-220 FGP20N60UFD PDF

    igbt 400V 20A

    Abstract: FGH20N60UFDTU 400v 20A ultra fast recovery diode fgh20n60 FGH20N60UFD igbt 40a 600v 12v igbt 20a
    Text: FGH20N60UFD tm 600V, 20A Field Stop IGBT Features General Description • High current capability Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low conduction and switching losses are essential.


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    FGH20N60UFD FGH20N60UFD igbt 400V 20A FGH20N60UFDTU 400v 20A ultra fast recovery diode fgh20n60 igbt 40a 600v 12v igbt 20a PDF

    600v 20a IGBT

    Abstract: fgh20n60 FGH20N60SFD FGH20N60SFDTU igbt 400V 20A 600v 20a diode 12v igbt 20a
    Text: FGH20N60SFD tm 600V, 20A Field Stop IGBT Features General Description • High current capability Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Induction Heating, UPS, SMPS and PFC applications where low conduction and switching losses are essential.


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    FGH20N60SFD FGH20N60SFD 600v 20a IGBT fgh20n60 FGH20N60SFDTU igbt 400V 20A 600v 20a diode 12v igbt 20a PDF

    FGB20N60SF

    Abstract: FGB20N60 igbt 400V 20A IGBT welder circuit igbt 600V 20a
    Text: FGB20N60SF 600V, 20A Field Stop IGBT Features General Description • High Current Capability Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Welder, UPS, SMPS and PFC applications where low conduction and


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    FGB20N60SF O-263AB/D2-PAK 100oC FGB20N60SF FGB20N60 igbt 400V 20A IGBT welder circuit igbt 600V 20a PDF

    fga20s120m

    Abstract: 600v 20a IGBT 1200v 20a IGBT DIODE GE 20a igbt 20A 1200v 12v igbt 20a
    Text: FGA20S120M tm 1200V, 20A ShortedAnodeTM IGBT Features General Description • High speed switching Using advanced Field Stop Trench and ShortedAnode technology, Fairchild’s 1200V ShortedAnodeTM Trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche capability. This


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    FGA20S120M fga20s120m 600v 20a IGBT 1200v 20a IGBT DIODE GE 20a igbt 20A 1200v 12v igbt 20a PDF

    Untitled

    Abstract: No abstract text available
    Text: IRG7PK35UD1PbF IRG7PK35UD1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1400V C G G IC = 20A, TC =100°C TJ max = 150°C VCE(ON) typ. = 2.0V @ IC = 20A E n-channel Applications • Induction heating  Microwave ovens


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    IRG7PK35UD1PbF IRG7PK35UD1-EPbF IRG7PK35UD1PbFÂ 247ACÂ IRG7PK35UD1â 247ADÂ PDF

    Untitled

    Abstract: No abstract text available
    Text: IRG7PK35UD1PbF IRG7PK35UD1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1400V C C C IC = 20A, TC =100°C TJ max = 150°C G G VCE(ON) typ. = 2.0V @ IC = 20A E n-channel Applications • Induction heating  Microwave ovens


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    IRG7PK35UD1PbF IRG7PK35UD1-EPbF IRG7PK35UD1PbFÂ 247ACÂ IRG7PK35UD1â 247ADÂ PDF

    igbt 600V 20a

    Abstract: No abstract text available
    Text: FGB20N60SF 600V, 20A Field Stop IGBT Features General Description • High Current Capability Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Welder, UPS, SMPS and PFC applications where low conduction and


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    FGB20N60SF O-263AB/D2-PAK 100oC igbt 600V 20a PDF

    Untitled

    Abstract: No abstract text available
    Text: FGB20N60SFD 600V, 20A Field Stop IGBT Features General Description • High Current Capability Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Welder, UPS, SMPS and PFC applications where low conduction and


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    FGB20N60SFD O-263AB/D2-PAK 100oC PDF

    igbt 400V 20A

    Abstract: IGBT welder circuit 400v 20A ultra fast recovery diode FGB20N60SF 20A igbt 12v igbt 20a FGB20N60SFD 10a 400V ultra fast diode d2pak
    Text: FGB20N60SFD 600V, 20A Field Stop IGBT Features General Description • High Current Capability Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Welder, UPS, SMPS and PFC applications where low conduction and


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    FGB20N60SFD O-263AB/D2-PAK 100oC igbt 400V 20A IGBT welder circuit 400v 20A ultra fast recovery diode FGB20N60SF 20A igbt 12v igbt 20a FGB20N60SFD 10a 400V ultra fast diode d2pak PDF

    Untitled

    Abstract: No abstract text available
    Text: FGB20N60SFD_F085 600V, 20A Field Stop IGBT Features General Description • High current capability Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverters and other applications where


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    FGB20N60SFD AEC-Q101 PDF

    Untitled

    Abstract: No abstract text available
    Text: GT20G102 T O SH IB A TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT G T 2 0 G 1 02 STROBE FLASH APPLICATIONS • • • • High Input Impedance Low Saturation Voltage Enhancement-Mode 12V Gate Drive : VcE sat = 8-OV (Max.) (IC = 130A)


    OCR Scan
    GT20G102 -I-19V PDF

    vqe 24 d

    Abstract: GT20G102 vqe 208 e
    Text: T O S H IB A GT20G102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT G T 2 0 G 1 02 Unit in mm STROBE FLASH APPLICATIONS • High Input Impedance • Low Saturation Voltage • Enhancement-Mode • 12V Gate Drive : VCE sat = 8.0V (Max.) (IC = 130A)


    OCR Scan
    GT20G102 vqe 24 d GT20G102 vqe 208 e PDF