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    1345 NPN Search Results

    1345 NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    1345 NPN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1345FMPC

    Abstract: EIA-625 GR-253-CORE TR-NWT-000468
    Text: Data Sheet January 2000 1345-Type Receiver with Clock Recovery and Data Retiming Applications Operating at 1.3 µm or 1.55 µm wavelengths and at 155 Mbits/s or 622 Mbits/s, the versatile 1345-Type Receiver is manufactured in a 20-pin, plastic DIP with a multimode fiber


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    PDF 1345-Type 20-pin, 20-pin GR-253-CORE) DS00-099OPTO DS99-071LWP) 1345FMPC EIA-625 GR-253-CORE TR-NWT-000468

    1345FMPC

    Abstract: EIA-625 GR-253-CORE TR-NWT-000468
    Text: Data Sheet February 2003 TriQuint Optoelectronics 1345-Type Receiver with Clock Recovery and Data Retiming Applications uNiDnUtCTOR Q i r T ICO pe SEM • 5-Ty 134 eiver Rec ■ Operating at 1.3 µm or 1.55 µm wavelengths and at 155 Mb/s or 622 Mb/s, the versatile 1345-Type Receiver is manufactured in a 20-pin, plastic DIP with a multimode fiber pigtail.


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    PDF 1345-Type 20-pin, 20-pin GR-253-CORE) DS00-099 1345FMPC EIA-625 GR-253-CORE TR-NWT-000468

    lucent OC12 receiver

    Abstract: Lucent receiver GR-253-CORE TR-NWT-000468 8833 signetics 1345cnpc
    Text: Data Sheet January 1999 1345-Type Receiver with Clock Recovery and Data Retiming Applications • Telecommunications — Inter- and intraoffice SONET/ITU-T SDH — Subscriber loop — Metropolitan area networks ■ High-speed data communications Description


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    PDF 1345-Type 20-pin, 20-pin GR-253-CORE) DS99-071LWP DS98-358LWP) lucent OC12 receiver Lucent receiver GR-253-CORE TR-NWT-000468 8833 signetics 1345cnpc

    EIA-625

    Abstract: ecl 10K signetics LUCENT InGaAs 1345FMPC GR-253-CORE TR-NWT-000468 pin optical fiber lucent DS99-073LWP
    Text: Data Sheet January 2000 1345-Type Receiver with Clock Recovery and Data Retiming Applications • Telecommunications — Inter- and intraoffice SONET/ITU-T SDH — Subscriber loop — Metropolitan area networks ■ High-speed data communications Description


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    PDF 1345-Type 20-pin, 20-pin GR-253-CORE) DS00-099OPTO DS99-071LWP) EIA-625 ecl 10K signetics LUCENT InGaAs 1345FMPC GR-253-CORE TR-NWT-000468 pin optical fiber lucent DS99-073LWP

    ZENER DIODE z91

    Abstract: ZNR 10K 271 TRANSISTOR REPLACEMENT ECG triac cf 406 panasonic ZNR MOV TRANSISTOR REPLACEMENT ECG 130 X2 MKP SH mr 504 diode SN2 357 hv9931 LED driver
    Text: Supertex inc. HV9931DB1v2 LED Driver Demo Board Input 120VAC // Output 350mA, 40V 14W General Description The HV9931 LED driver is primarily targeted at low to medium power LED lighting applications where galvanic isolation of the LED string is not an essential requirement.


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    PDF HV9931DB1v2 120VAC 350mA, HV9931 ZENER DIODE z91 ZNR 10K 271 TRANSISTOR REPLACEMENT ECG triac cf 406 panasonic ZNR MOV TRANSISTOR REPLACEMENT ECG 130 X2 MKP SH mr 504 diode SN2 357 hv9931 LED driver

    SN2 357

    Abstract: triac cf 406 ZNR 10K 271 TRANSISTOR REPLACEMENT ECG ERJ-6ENF1001V HV9931 ZENER DIODE z91 Vishay Q81 Heatsink-TO220 transistor pnp ecg 180
    Text: Supertex inc. HV9931DB2v1 LED Driver Demo Board Input 230VAC // Output 350mA, 40V 14W General Description The HV9931 LED driver is primarily targeted at low to medium power LED lighting applications where galvanic isolation of the LED string is not an essential requirement.


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    PDF HV9931DB2v1 230VAC 350mA, HV9931 SN2 357 triac cf 406 ZNR 10K 271 TRANSISTOR REPLACEMENT ECG ERJ-6ENF1001V ZENER DIODE z91 Vishay Q81 Heatsink-TO220 transistor pnp ecg 180

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet January 1999 group Lucent Technologies Bell Labs Innovations 1345-Type Receiver with Clock Recovery and Data Retiming Applications • Telecommunications — Inter- and intraoffice SONET/ITU-T SDH — Subscriber loop — Metropolitan area networks


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    PDF 1345-Type OC-12 GR-253-CORE DS99-071LWP DS98-358LWP)

    Untitled

    Abstract: No abstract text available
    Text: D atash eet January 1999 m icroelectronics group Lucent Technologies Bell Labs Innovations 1345-Type Receiver with Clock Recovery and Data Retiming Applications • Telecommunications — Inter- and intraoffice SONET/ITU-T SDH — Subscriber loop — Metropolitan area networks


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    PDF 1345-Type 20-pin, 20-pin DS99-071LWP DS98-358LWP)

    lucent OC12 receiver

    Abstract: No abstract text available
    Text: Data Sheet September 1998 group y' Lucent Technologies Bell Labs Innovations 1345-Type Receiver with Clock Recovery and Data Retiming Applications • Telecommunications — Inter- and intraoffice SONET/ITU-T SDH — Subscriber loop — Metropolitan area networks


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    PDF 1345-Type OC-12 GR-253-CORE DS98-358LWP lucent OC12 receiver

    HF mark

    Abstract: 2sc2463
    Text: 2SC2463 Silicon NPN Epitaxial HITACHI Application Low frequency amplifier Outline MPAK k, ^ ^ ^ " 2 382 1. Emitter 2. Base 3. Collector 2SC2463 Item Symbol Ratings Unit Collector to base voltage VcBO 55 V Collector to emitter voltage < o m O Absolute Maximum Ratings Ta = 25°C


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    PDF 2SC2463 10jxA, 2SC2463 HF mark

    Untitled

    Abstract: No abstract text available
    Text: 2SC3470 Silicon NPN Epitaxial HITACHI Application Low frequency am plifier Outline SPAK I 1 23 1. Emitter 2. Collector 3. Base 487 2SC3470 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VcBO 55 V Collector to emitter voltage


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    PDF 2SC3470 2SC3470

    2Sc2309

    Abstract: No abstract text available
    Text: 2SC2309 Silicon NPN Epitaxial HITACHI Application Low frequency amplifier Outline TO-92 1 f l I 1. Emitter 2. Collector 3. Base 3 2 1 373 2SC2309 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage ^CBO 55 V Collector to emitter voltage


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    PDF 2SC2309 2SC2309

    2SC1344

    Abstract: 2SC1345 J344 J200 Hitachi 2SC1344 2SCI344 2SCI345
    Text: HITACHI 2 S C 1 3 4 4 , 2 S C 1 3 4 5 SILICON NPN ÉPITAXIAL LOW FREQUENCY LOW NOISE AMPLIFIER 5t u t Í'.N! 11 : JEDEC TO-92 • ASSOLUTE MAXIMUM RATINGS Ilern S ym b o l MAXIMUM COLLECTOR DISSIPATION (T a ~ 2 5 °C ) 2 S C I3 4 4 2 S C I3 4 Î U n ii C u llc c io r io Ix iic v o lia te


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    PDF 2SC1344, 2SC1345 2SCI344 2SCI345 2SCI34 2SC1344 2SC1345 J344 J200 Hitachi 2SC1344

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFG135A NPN Silicon RF Transistor • For low-distortion broadband output amplifier stages in antenna and telecommunications systems up to 2 GHz at collector currents from 70mA to 130mA • Power amplifiers for DECT and PCN systems • Integrated emitter ballast resistor


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    PDF BFG135A 130mA BFG135A Q62702-F1322 OT-223 GlE17b4 900MHz 0S35bOS D1217b5

    A1345

    Abstract: 2SC3399 2SA1345 2sc339
    Text: Ordering num ber: EN 1 2 8 7 C i 2SA1345/2SC3399 PNP/ NPN Epitaxial Planar Silicon Transistors SAiYO Switching Applications with Bias Resistance i A pplicationi Switching circuit, inverter, interface circuit, driver Feature» ► Built-in bias resistor (R*j=47k£l,


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    PDF 1287C 2SA1345/2SC3399 47kft) 2SA1345 A1345 2SC3399 2sc339

    FR180

    Abstract: BFR180
    Text: SIEMENS B F R 180 NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA • f j = 7GH;: F = 2.1 dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!


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    PDF 900MHz Q62702-F1296 OT-23 FR180 BFR180

    2sc1345

    Abstract: 2sc1344 Hitachi 2SC1344
    Text: 2SC1344,2SC1345 Silicon NPN Epitaxial HITACHI Application Low frequency low noise amplifier Outline TO-92 1 f l l| ! Í 1. Emitter 2. Collector 3. Base , 3 2 U 1 327 2SC1344,2SC1345 Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SC1344 2SC1345 Unit Collector to base voltage


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    PDF 2SC1344 2SC1345 2SC1344 2sc1345 Hitachi 2SC1344

    a06 amplifier

    Abstract: a06 transistor a06 transistor 165 MPS-A05 MPS-A06
    Text: r— i Silicon Transistors I I B I MPS-A05 MPS-A06 The MPS-A05 and MPS-A06 are silicon planar epitaxial passivated NPN tran­ sistors designed for general purpose audio amplifier applications. a b s o lu te m a x im u m r a t i n g s : TA = 25°c unless otherwise specified


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    PDF MPS-A05 MPS-A06 MPS-A05 MPS-A06 100mA, 100mA) 300/Usee. a06 amplifier a06 transistor a06 transistor 165

    transistor 1345

    Abstract: CA3246E 4460E 1333E
    Text: S CA3227, CA3246 High-Frequency NPN Transistor Arrays For LowPower Applications at Frequencies Up to 1.5GHz August 1996 Features • Description Gain-Bandwidth Product fT . >3G Hz The CA3227 and CA3246 consist of five general purpose sil­


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    PDF CA3227, CA3246 CA3227 CA3246 CA3227 transistor 1345 CA3246E 4460E 1333E

    transistor npn 4-071

    Abstract: SIN16 Power MOSFET Selection Guide TRANSISTOR FOR 10GHz oscillator CA3081 CFB600 mosfet selection guide CA3146 NPN
    Text: A/D CONVERTERS PART NO. DESCRIPTION RESO­ CONVER­ LUTION SION RATE BITS (MIN) (MSPS) BAND­ WIDTH (MHz) SINAD A T f,„ (dB) DIFF. GAIN (%) DIFF. PHASE (DEG.) POWER DISSIPATION (mW) LOGIC TYPE SUPPLY VOLTAGE PACKAGE OPTIONS (V) (NOTE 1) (NOTE 2) TEMP. AnswerFAXSM EVAL


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    PDF HI5710A HI5746 HI5703 HI5766 HI5800 HI5804 HIS805 HI5808 12-Bit 10MHz transistor npn 4-071 SIN16 Power MOSFET Selection Guide TRANSISTOR FOR 10GHz oscillator CA3081 CFB600 mosfet selection guide CA3146 NPN

    cm 45-12

    Abstract: Mrf621 transistor 1346 420 NPN Silicon RF Transistor VK200 vk200 rf choke
    Text: MRF621 SILICON T h e R F L in e 45 W - 470 M Hz "CONTROLLED Q" RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR . . .d es ig n e d fo r 1 2 .5 V o l t U H F large-signal a m p lifie r a p p lic a tio n s in industrial and c o m m e rc ia l


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    PDF MRF621 cm 45-12 Mrf621 transistor 1346 420 NPN Silicon RF Transistor VK200 vk200 rf choke

    PG2349

    Abstract: LEA-5 2N2811 2N2812 2N2813 2N2814 PG1335 PG1336 PG2335 PG2347
    Text: P I ELECTRONICS INC A *,4 : 10 AMP jj 100 VOLT j 40 WATT Î 60 MHz ] 1 TO-61 #»a |l tP,y'v ip V:it K-ï ¡g$ •¿-¡if-' *&? ;V . ?$ TO-61 • Low saturation voltage at maximum collector current • High voltage, BVceoi.u. to 100 volts B V c E O sus)


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    PDF 2N2811 PG234 PG1337 PG1341 PG2349 LEA-5 2N2812 2N2813 2N2814 PG1335 PG1336 PG2335 PG2347

    30424

    Abstract: CA3246E transistor y21 transistor 1345 CA3246 CA3227 CA3227E 92CS-30424 y12 t Y12 T SO-16
    Text: G E SOLID STATE 01 D E | 3fl7£Dfil □□mbS'4 3 | n r r a y s _ 7^ !- CA3227, CA3246 High-Frequency N-P-N Transistor Arrays For Low -Power Applications at Frequencies up to 1.5 G H z Features: • G ain-bandw idth p ro d u c t f f > 3 GHz


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    PDF 14bS4 CA3227, CA3246 RCA-CA3227E CA3246E* CA3227E 16-lead CA3246E 14-lead 30424 transistor y21 transistor 1345 CA3246 CA3227 92CS-30424 y12 t Y12 T SO-16

    2N6052

    Abstract: No abstract text available
    Text: SEMTECH CORP 5ÛE D m 613^13=1 150 WATT 12 AMP CONTINUOUS, 20 AMP PEAK 00032^0 T2b 2N6051, 2N6052, 2N6058 2N6059 ‘ MAXIMUM RATINGS PARAM ETER SYM BO L C o lle cto r E m itter Voltage Vdc 80 2N6052, 2N6059 100 C o lle cto r B ase Voltage Vdc VCBO 80 2 N 6 0 5 1 , 2N6058


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    PDF 2N6051, 2N6052, 2N6058 2N6059 00Q33D2 2N6058, 2N6052