HUR3020CT
Abstract: HUR3030CT
Text: HUR3020CT, HUR3030CT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode A C A Dimensions TO-220AB A C A C TAB A=Anode, C=Cathode, TAB=Cathode VRSM V 200 300 HUR3020CT HUR3030CT Symbol VRRM V 200 300 Test Conditions IFRMS IFAVM TC=135oC; rectangular, d=0.5
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HUR3020CT,
HUR3030CT
O-220AB
HUR3020CT
135oC;
180uH
10kHz;
HUR3020CT
HUR3030CT
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HUR3020CTS
Abstract: No abstract text available
Text: HUR3020CTS High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions TO-263 D2PAK C(TAB) A C A NC A=Anode, NC= No connection, TAB=Cathode HUR3020CTS VRSM V 200 Symbol VRRM V 200 Test Conditions IFRMS IFAVM TC=135oC; rectangular, d=0.5
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HUR3020CTS
O-263
180uH
10kHz;
HUR3020CTS
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HUR2060CT
Abstract: No abstract text available
Text: HUR2060CT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode A C A Dimensions TO-220AB A C A C TAB A=Anode, C=Cathode, TAB=Cathode VRSM V 600 HUR2060CT Symbol VRRM V 600 Test Conditions IFRMS IFAVM TC=135oC; rectangular, d=0.5 IFSM
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HUR2060CT
O-220AB
135oC;
180uH
10kHz;
HUR2060CT
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Untitled
Abstract: No abstract text available
Text: a SMBus/I2C Compatible,10-bit Digital Temperature Sensor in 5 Pin SOT-23 AD7415 Preliminary Technical Data FEATURES 10-Bit Temperature to Digital Converter. Temperature range: -55oC to +135oC -55oC to +125oC Accuracy of ±2oC SMBusTM/I2CR Compatible Serial Interface
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10-bit
OT-23
AD7415
-55oC
135oC
125oC
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sonic cleaner
Abstract: HUR2060CT
Text: HUR2060CT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode A C A Dimensions TO-220AB A C A C TAB A=Anode, C=Cathode, TAB=Cathode VRSM V 600 HUR2060CT Symbol VRRM V 600 Test Conditions IFRMS IFAVM TC=135oC; rectangular, d=0.5 IFSM
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HUR2060CT
O-220AB
180uH
10kHz;
sonic cleaner
HUR2060CT
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HUR3020CTS
Abstract: No abstract text available
Text: HUR3020CTS High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions TO-263 D2PAK C(TAB) A C A NC A=Anode, NC= No connection, TAB=Cathode HUR3020CTS VRSM V 200 Symbol VRRM V 200 Test Conditions IFRMS IFAVM TC=135oC; rectangular, d=0.5
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HUR3020CTS
O-263
135oC;
180uH
10kHz;
HUR3020CTS
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100v 3A ultra fast recovery diode
Abstract: HUR6060PT 100V 60A Diode
Text: HUR6060PT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode A C A Dimensions TO-247AD A C A C TAB A=Anode, C=Cathode, TAB=Cathode VRSM V 600 HUR6060PT Symbol VRRM V 600 Test Conditions IFRMS IFAVM TC=135oC; rectangular, d=0.5 IFSM
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HUR6060PT
O-247AD
135oC;
180uH
10kHz;
100v 3A ultra fast recovery diode
HUR6060PT
100V 60A Diode
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E85381
Abstract: Raychem OR Tyco Electronics Raychem Connectors TC-CAPS-4001-9 KU tyco raychem tyco Tyco Electronics size of raychem insulation
Text: TC Cap • Electrical insulation • Small, lightweight Single wall, heat-shrinkable end caps • Vibration-proof • Temperature rating to +135oC TC cap is a lightweight, single wall, heatshrinkable end cap designed to insulate and terminate dead-end electrical wires,
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135oC
RI0046
E85381
Raychem OR Tyco Electronics
Raychem Connectors
TC-CAPS-4001-9
KU tyco
raychem tyco
Tyco Electronics
size of raychem insulation
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D7415
Abstract: DIODE CG4 HN SOT23-5
Text: a SMBus/I2C Compatible,10-bit Digital Temperature Sensor in 5 Pin SOT-23 AD7415 Preliminary Technical Data FEATURES 10-Bit Temperature to Digital Converter. Temperature range: -55oC to +135oC -55oC to +125oC Accuracy of ±2oC SMBusTM/I2CR Compatible Serial Interface
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10-bit
OT-23
AD7415
-55oC
135oC
125oC
D7415
DIODE CG4
HN SOT23-5
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oc170
Abstract: JESD22-B104-B Vitec Electronics
Text: Surface Mount Power Inductor Designed for DC/DC Converters FEATURES Extended operating range of -35 to 135oC. Peak current handling of 18 Amps. 1 MHz operating frequency. Robust package capable of handling aggressive reflow soldering process. Low profile package suitable for portable
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135oC.
UL94V-0
AF3229
oc170
JESD22-B104-B
Vitec Electronics
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HUR6060PT
Abstract: No abstract text available
Text: HUR6060PT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode A C A Dimensions TO-247AD A C A C TAB A=Anode, C=Cathode, TAB=Cathode VRSM V 600 HUR6060PT Symbol VRRM V 600 Test Conditions IFRMS IFAVM TC=135oC; rectangular, d=0.5 IFSM
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HUR6060PT
O-247AD
180uH
10kHz;
HUR6060PT
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la sot23-8 analog
Abstract: AD7414 AD7414-0 code d12 6-pin sot-23 D7414 HN SOT23
Text: a SMBus/I2C Compatible,10-bit Digital Temperature Sensor in SOT-23 AD7414 Preliminary Technical Data FEATURES 10-Bit Temperature to Digital Converter. Temperature ranges: -55oC to +135oC -55oC to +125oC Accuracy of ±2oC SMBusTM/I2CR Compatible Serial Interface
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10-bit
OT-23
AD7414
-55oC
135oC
125oC
la sot23-8 analog
AD7414-0
code d12 6-pin sot-23
D7414
HN SOT23
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HUR3020CT
Abstract: HUR3030CT MJ 800
Text: HUR3020CT, HUR3030CT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode A C A Dimensions TO-220AB A C A C TAB A=Anode, C=Cathode, TAB=Cathode VRSM V 200 300 HUR3020CT HUR3030CT Symbol VRRM V 200 300 Test Conditions IFRMS IFAVM TC=135oC; rectangular, d=0.5
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HUR3020CT,
HUR3030CT
O-220AB
HUR3020CT
180uH
10kHz;
HUR3020CT
HUR3030CT
MJ 800
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MBR10H100
Abstract: No abstract text available
Text: MBR1035 THRU MBR10H100 10.0 AMPS. Schottky Barrier Rectifiers Voltage Range 35 to 100 Volts Current 10.0 Amperes TO-220A Features .185 4.70 .175(4.44) Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction
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MBR1035
MBR10H100
250oC/10
O-220A
MBR1035-MBR1045
MBR1050-MBR1060
MBR10H90-MBR10H100
MBR1050-MBR10H100
50mVp-p
MBR10H100
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Untitled
Abstract: No abstract text available
Text: VNB10N07/K10N07FM VNP10N07FI/VNV10N07 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE VNB10N07 VNK10N07FM VNP10N07FI VNV10N07 • ■ ■ ■ ■ ■ ■ ■ ■ Vclamp 70 70 70 70 V V V V R DS on 0.1 0.1 0.1 0.1 Ω Ω Ω Ω I lim 10 10 10 10 A A
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VNB10N07/K10N07FM
VNP10N07FI/VNV10N07
VNB10N07
VNK10N07FM
VNP10N07FI
VNV10N07
VNB10N07,
VNK10N07FM,
VNV10N07
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VNK5N07FM
Abstract: VNP5N07FI VND5N07 VND5N07-1 SGS-Thomson mosfet ipak
Text: VND5N07/VND5N07-1 VNP5N07FI/K5N07FM "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE VND5N07 VND5N07-1 VNP5N07FI VNK5N07FM Vclamp 70 70 70 70 V V V V R DS on 0.2 0.2 0.2 0.2 Ω Ω Ω Ω I lim 5 5 5 5 A A A A 3 • ■ ■ ■ ■ ■ ■ ■ ■ LINEAR CURRENT LIMITATION
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VND5N07/VND5N07-1
VNP5N07FI/K5N07FM
VND5N07
VND5N07-1
VNP5N07FI
VNK5N07FM
VND5N07,
VND5N07-1,
VNP5N07FI
VNK5N07FM
VND5N07
VND5N07-1
SGS-Thomson mosfet ipak
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NDS9955
Abstract: SOIC-16
Text: May 1998 NDS9955 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density
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NDS9955
OT-23
NDS9955
SOIC-16
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NDS9936
Abstract: No abstract text available
Text: February 1996 NDS9936 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is
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NDS9936
NDS9936
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Untitled
Abstract: No abstract text available
Text: AP9928GEM Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low on-resistance D2 D2 ▼ Capable of 2.5V gate drive D1 D1 ▼ Surface mount package BVDSS 20V RDS ON 23mΩ ID 7.3A G2 S2 SO-8 S1 G1 Description
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AP9928GEM
100ms
135oC/W
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9936gm
Abstract: AP9936GM-HF
Text: AP9936GM-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ DC-DC Application ▼ Dual N-channel Device D2 D1 D2 D1 G2 S2 SO-8 S1 30V RDS ON 50mΩ ID ▼ Surface Mount Package ▼ RoHS Compliant BVDSS 5A G1
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AP9936GM-HF
9936GM
9936gm
AP9936GM-HF
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PF5085
Abstract: NDS9959
Text: February 1996 NDS9959 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is
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NDS9959
PF5085
NDS9959
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VNB14N04
Abstract: VNK14N04FM VNP14N04FI VNV14N04 diode SS 16
Text: VNB14N04/K14N04FM VNP14N04FI/VNV14N04 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE VNB14N04 VNK14N04FM VNP14N04FI VNV14N04 • ■ ■ ■ ■ ■ ■ ■ ■ Vclamp 42 42 42 42 V V V V R DS on 0.07 0.07 0.07 0.07 Ω Ω Ω Ω I lim 14 14 14 14
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VNB14N04/K14N04FM
VNP14N04FI/VNV14N04
VNB14N04
VNK14N04FM
VNP14N04FI
VNV14N04
VNB14N04,
VNK14N04FM,
VNV14N04
VNB14N04
VNK14N04FM
VNP14N04FI
diode SS 16
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Untitled
Abstract: No abstract text available
Text: SSM4507M COMPLEMENTARY N AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement D2 D1 D2 D1 D1 D1 Lower gate charge Fast switching performance N-Ch D2 D2 SO-8 G2 G2 S2 G1 S2 S1 G1 S1 BV P-Ch Description R DS ON 36mΩ ID BV DSS R DS(ON) ID
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SSM4507M
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Untitled
Abstract: No abstract text available
Text: SSM9936GM Dual N-channel Enhancement-mode Power MOSFETs BVD2 Simple drive requirement D2 Lower gate charge D1 D1 Fast switching characteristics R I G2 S2 Pb-free; RoHS compliant. SO-8 S1 BVDSS 30V R DS ON 50mΩ ID 5A G1 DESCRIPTION Advanced Power MOSFETs from Silicon Standard provide the
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SSM9936GM
SSM9936GM
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