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    13N6 Price and Stock

    STMicroelectronics STL13N60DM2

    MOSFET N-CH 600V 8A POWERFLAT HV
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    DigiKey STL13N60DM2 Reel 6,000 3,000
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    Mouser Electronics STL13N60DM2 2,458
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    Avnet Silica STL13N60DM2 17 Weeks 3,000
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    STMicroelectronics STD13N60DM2

    MOSFET N-CH 600V 11A DPAK
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    DigiKey STD13N60DM2 Digi-Reel 4,633 1
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    STD13N60DM2 Cut Tape 4,633 1
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    STD13N60DM2 Reel 2,500 2,500
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    Avnet Americas STD13N60DM2 Ammo Pack 32 Weeks, 4 Days 1
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    STD13N60DM2 Bulk 16 Weeks 2,500
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    Mouser Electronics STD13N60DM2 2,031
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    Newark STD13N60DM2 Cut Tape 2,466 1
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    Avnet Silica STD13N60DM2 17 Weeks 2,500
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    EBV Elektronik STD13N60DM2 17 Weeks 2,500
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    STMicroelectronics STL13N60M6

    MOSFET N-CH 600V 7A POWERFLAT HV
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    DigiKey STL13N60M6 Cut Tape 2,490 1
    • 1 $2.61
    • 10 $1.68
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    STL13N60M6 Digi-Reel 2,490 1
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    • 10 $1.68
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    Avnet Americas STL13N60M6 Reel 14 Weeks 3,000
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    Mouser Electronics STL13N60M6
    • 1 $2.41
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    Avnet Silica STL13N60M6 15 Weeks 3,000
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    EBV Elektronik STL13N60M6 15 Weeks 3,000
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    STMicroelectronics STF13N65M2

    MOSFET N-CH 650V 10A TO220FP
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    DigiKey STF13N65M2 Tube 1,856 1
    • 1 $2.59
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    Mouser Electronics STF13N65M2 918
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    Newark STF13N65M2 Bulk 1,138 1
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    Avnet Silica STF13N65M2 17 Weeks 50
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    STMicroelectronics STD13N65M2

    MOSFET N-CH 650V 10A DPAK
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    DigiKey STD13N65M2 Digi-Reel 1,710 1
    • 1 $2.26
    • 10 $1.447
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    STD13N65M2 Cut Tape 1,710 1
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    Avnet Americas STD13N65M2 Reel 16 Weeks 2,500
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    Mouser Electronics STD13N65M2 3,428
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    Newark STD13N65M2 Cut Tape 1
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    Avnet Silica STD13N65M2 2,500 17 Weeks 2,500
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    EBV Elektronik STD13N65M2 15,000 17 Weeks 2,500
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    Find more 13N6 price and stock on Findchips.com

    13N6 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors OHDM 13N6901/S35A Diffuse sensors with background suppression dimension drawing * 34,75 48,2 LED M8 x 1 39,2 6,45 Teach-in 41 13,4 4,2 3,6 40 29 2,1 * emitter axis general data photo type background suppression light source pulsed red laser diode


    Original     		13N6901/S35A PDF

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors OHDM 13N6901/S35A Diffuse sensors with background suppression dimension drawing * 34,75 48,2 LED M8 x 1 39,2 6,45 Teach-in 41 13,4 4,2 3,6 40 29 2,1 * emitter axis general data photo type background suppression light source pulsed red laser diode


    Original     		13N6901/S35A PDF

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors OHDM 13N6951/S35A Diffuse sensors with background suppression dimension drawing * 34,75 48,2 LED M8 x 1 39,2 6,45 Teach-in 41 13,4 4,2 3,6 40 29 2,1 * emitter axis general data photo type background suppression light source pulsed red laser diode


    Original     		13N6951/S35A PDF

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors OHDM 13N6951/S35A Diffuse sensors with background suppression dimension drawing * 34,75 48,2 LED M8 x 1 39,2 6,45 Teach-in 41 13,4 4,2 3,6 40 29 2,1 * emitter axis general data photo type background suppression light source pulsed red laser diode


    Original     		13N6951/S35A 680nm PDF

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors OHDM 13N6901/S35A Diffuse sensors with background suppression dimension drawing * 34,75 48,2 LED M8 x 1 39,2 6,45 Teach-in 41 13,4 4,2 3,6 40 29 2,1 * emitter axis general data photo type background suppression light source pulsed red laser diode


    Original     		13N6901/S35A PDF

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors OHDM 13N6901/S35A Diffuse sensors with background suppression dimension drawing * 34,75 48,2 LED M8 x 1 39,2 6,45 Teach-in 41 13,4 4,2 3,6 40 29 2,1 * emitter axis general data photo type background suppression light source pulsed red laser diode


    Original     		13N6901/S35A 680nm PDF

    Untitled

    Abstract: No abstract text available
    Text: IXKP 13N60C5M COOLMOS * Power MOSFET ID25 = 6.5 A VDSS = 600 V RDS on max = 0.3 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions


    Original     		13N60C5M O-220 20080310b PDF

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors OHDM 13N6901/S35A Diffuse sensors with background suppression dimension drawing * 34,75 48,2 LED M8 x 1 39,2 6,45 Teach-in 41 13,4 4,2 3,6 40 29 2,1 * emitter axis photo general data type background suppression light source pulsed red laser diode


    Original     		13N6901/S35A 680nm PDF

    ABB s

    Abstract: No abstract text available
    Text: V RM I T AV M I T(RMS) I TSM V T0 rT = 6500 V = 1405 A = 2205 A = 22x103 A = 1.2 V = 0.6 m Bi-Directional Control Thyristor 5STB 13N6500 Doc. No. 5SYA1035-04 Aug. 10 • Two thyristors integrated into one wafer  Patented free-floating silicon technology


    Original     		13N6500 5SYA1035-04 13N6500 65echanical CH-5600 ABB s PDF

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors OHDM 13N6901/S35A Diffuse sensors with background suppression dimension drawing * 34,75 48,2 LED M8 x 1 39,2 6,45 Teach-in 41 13,4 4,2 3,6 40 29 2,1 * emitter axis general data photo type background suppression light source pulsed red laser diode


    Original     		13N6901/S35A PDF

    gate turn-off

    Abstract: No abstract text available
    Text: VSM IT AV M IT(RMS) ITSM VT0 rT = 6500 V = 1405 A = 2205 A = 22x103 A = 1.2 V = 0.6 mΩ Bi-Directional Control Thyristor 5STB 13N6500 Doc. No. 5SYA1035-03 May 06 • Two thyristors integrated into one wafer • Patented free-floating silicon technology •


    Original     		13N6500 5SYA1035-03 CH-5600 gate turn-off PDF

    13n60c

    Abstract: 13n60
    Text: IXKP 13N60C5 CoolMOS 1 Power MOSFET ID25 = 13 A VDSS = 600 V RDS on) max = 0.3 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 AB G D S G S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS


    Original     		13N60C5 O-220 20090209c 13n60c 13n60 PDF

    MA660

    Abstract: No abstract text available
    Text: Advanced Technical Information COOLMOS * Power MOSFET IXKP 13N60C5M ID25 = 6.5 A VDSS = 600 V RDS on max = 0.3 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Conditions


    Original     		13N60C5M O-220 MA660 PDF

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors OHDM 13N6951/S35A Diffuse sensors with background suppression dimension drawing * 34,75 48,2 LED M8 x 1 39,2 6,45 Teach-in 41 13,4 4,2 3,6 40 29 2,1 * emitter axis general data photo type background suppression light source pulsed red laser diode


    Original     		13N6951/S35A PDF

    13n60c

    Abstract: 13N60
    Text: IXKP 13N60C5M CoolMOS 1 Power MOSFET ID25 = 6.5 A VDSS = 600 V RDS on) max = 0.3 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions


    Original     		13N60C5M O-220 20090209d 13n60c 13N60 PDF

    13N60

    Abstract: 13N60C5M
    Text: IXKP 13N60C5M CoolMOS 1 Power MOSFET ID25 = 6.5 A VDSS = 600 V RDS on) max = 0.3 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions


    Original     		13N60C5M O-220 20080523c 13N60 13N60C5M PDF

    13N60C5

    Abstract: 13N60 13n60c
    Text: IXKH 13N60C5 IXKP 13N60C5 Advanced Technical Information ID25 = 13 A = 600 V VDSS RDS on max = 0.3 Ω CoolMOS Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D S D (TAB) S TO-220 AB (IXKP)


    Original     		13N60C5 13N60C5 O-247 O-220 13N60 13n60c PDF

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors OHDM 13N6951/S35A Diffuse sensors with background suppression dimension drawing * 34,75 48,2 LED M8 x 1 39,2 6,45 Teach-in 41 13,4 4,2 3,6 40 29 2,1 * emitter axis general data photo type background suppression light source pulsed red laser diode


    Original     		13N6951/S35A PDF

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors OHDM 13N6951/S35A Diffuse sensors with background suppression dimension drawing * 34,75 48,2 LED M8 x 1 39,2 6,45 Teach-in 41 13,4 4,2 3,6 40 29 2,1 * emitter axis general data photo type background suppression light source pulsed red laser diode


    Original     		13N6951/S35A PDF

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors OHDM 13N6901/S35A Diffuse sensors with background suppression dimension drawing * 34,75 48,2 LED M8 x 1 39,2 6,45 Teach-in 41 13,4 4,2 3,6 40 29 2,1 * emitter axis general data photo type background suppression light source pulsed red laser diode


    Original     		13N6901/S35A PDF

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors OHDM 13N6951/S35A Diffuse sensors with background suppression dimension drawing * 34,75 48,2 LED M8 x 1 39,2 6,45 Teach-in 41 13,4 4,2 3,6 40 29 2,1 * emitter axis general data photo type background suppression light source pulsed red laser diode


    Original     		13N6951/S35A PDF

    ABB thyristor 5

    Abstract: abb s 212 ABB thyristor 13N6
    Text: VSM = 6500 V ITAVM = 1405 A ITRMS = 2205 A ITSM = 22000 A VT0 = 1.20 V rT = 0.600 mΩ Ω Bi-Directional Control Thyristor 5STB 13N6500 Doc. No. 5SYA1035-03 Sep. 01 • Two thyristors integrated into one wafer • Patented free-floating silicon technology


    Original     		13N6500 5SYA1035-03 13N6200 13N5800 CH-5600 ABB thyristor 5 abb s 212 ABB thyristor 13N6 PDF

    SGW13N60UFD

    Abstract: No abstract text available
    Text: SGW 13N60UFD FE A TU R ES N-CHANNEL IG B T D2-PAK * High Speed Switching * Low Saturation Voltage : V CE sat = 1.95 V (@ lc=6.5A) * High Input Impedance *CO-PAK, IGBT with FRD : Trr = 37nS (typ.) A P P LIC A TIO N S * * * * * AC & DC Motor controls General Purpose Inverters


    OCR Scan     		SGW13N60UFD SGW13N60UFD PDF

    SGW13N60UF

    Abstract: No abstract text available
    Text: SGW 13N60UF N-CHANNEL IG B T FE A TU R ES * High Speed Switching * Low Saturation Voltage : V CE sat = 1.95 V (@ lc=6.5A) * High Input Impedance * Short Circuit Rated : Min. 2uS(@ Vge=15V) A P P LIC A TIO N S * * * * * AC & DC Motor controls General Purpose Inverters


    OCR Scan     		SGW13N60UF SGW13N60UF PDF