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    13NG Search Results

    13NG Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    1508-13NGLC Coilcraft Inc General Purpose Inductor, 0.013uH, 2%, 1 Element, Air-Core, SMD, 1616, ROHS COMPLIANT Visit Coilcraft Inc
    1508-13NGLB Coilcraft Inc General Purpose Inductor, 0.013uH, 2%, 1 Element, Air-Core, SMD, 1616, ROHS COMPLIANT Visit Coilcraft Inc
    1508-13NGL Coilcraft Inc RF inductor, air core, 2% tol, SMT, RoHS Visit Coilcraft Inc
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    13NG Price and Stock

    Murata Manufacturing Co Ltd LQW15AN13NG00D

    FIXED IND 13NH 430MA 0.21OHM SMD
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    DigiKey LQW15AN13NG00D Digi-Reel 49,312 1
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    Component Electronics, Inc LQW15AN13NG00D 150
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    Murata Manufacturing Co Ltd LQW15AN13NG80D

    FIXED IND 13NH 1.24A 0.093OHM SM
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    DigiKey LQW15AN13NG80D Digi-Reel 22,911 1
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    Murata Manufacturing Co Ltd LQW15AN13NG8ZD

    FIXED IND 13NH 1.24A 0.093OHM SM
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    DigiKey LQW15AN13NG8ZD Cut Tape 22,458 1
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    TDK Corporation MHQ1005P13NGT000

    FIXED IND 13NH 420MA 260MOHM SMD
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    DigiKey MHQ1005P13NGT000 Digi-Reel 19,581 1
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    Mouser Electronics MHQ1005P13NGT000 9,185
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    Murata Manufacturing Co Ltd LQW18AN13NG00D

    FIXED IND 13NH 600MA 0.13OHM SMD
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    DigiKey LQW18AN13NG00D Reel 8,000 4,000
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    Find more 13NG price and stock on Findchips.com

    13NG Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    48 13ng mosfet

    Abstract: 369C 369D NTD4813N NTD4813NT4G TF 241
    Text: NTD4813N Power MOSFET 30 V, 40 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTD4813N NTD4813N/D 48 13ng mosfet 369C 369D NTD4813N NTD4813NT4G TF 241

    48 13ng mosfet

    Abstract: NTD4813N
    Text: NTD4813N Power MOSFET 30 V, 40 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTD4813N NTD4813N/D 48 13ng mosfet

    Untitled

    Abstract: No abstract text available
    Text: NTD4913N Power MOSFET 30 V, 32 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTD4913N NTD4913N/D

    Untitled

    Abstract: No abstract text available
    Text: NTD4813N Power MOSFET 30 V, 40 A, Single N-Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com


    Original     		PDF NTD4813N NTD4813N/D

    369D

    Abstract: NTD4813N
    Text: NTD4813N Power MOSFET 30 V, 40 A, Single N-Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com


    Original     		PDF NTD4813N NTD4813N/D 369D NTD4813N

    4813N

    Abstract: No abstract text available
    Text: NTD4813N Power MOSFET 30 V, 40 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTD4813N NTD4813N/D 4813N

    369D

    Abstract: NTD4913NT4G 13ng
    Text: NTD4913N Power MOSFET 30 V, 32 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTD4913N NTD4913N/D 369D NTD4913NT4G 13ng

    48 13ng mosfet

    Abstract: 48 13ng
    Text: NTD4813N Power MOSFET 30 V, 40 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTD4813N NTD4813N/D 48 13ng mosfet 48 13ng

    Untitled

    Abstract: No abstract text available
    Text: NTD3813N Power MOSFET 16 V, 51 A, Single N-Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThree Package Variations for Design Flexibility


    Original     		PDF NTD3813N NTD3813N/D

    13ng

    Abstract: NTD4813N 4813NG NTD4813N-1G 369D 4813N 369ac
    Text: NTD4813N Power MOSFET 30 V, 40 A, Single N-Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices http://onsemi.com


    Original     		PDF NTD4813N NTD4813N/D 13ng NTD4813N 4813NG NTD4813N-1G 369D 4813N 369ac

    Untitled

    Abstract: No abstract text available
    Text: NTD4913N Power MOSFET 30 V, 32 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTD4913N NTD4913N/D

    369D

    Abstract: NTD4913NT4G 051BSC
    Text: NTD4913N Power MOSFET 30 V, 32 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTD4913N NTD4913N/D 369D NTD4913NT4G 051BSC

    369D

    Abstract: NTD3813N-1G NTD3813N-35G NTD3813NT4G
    Text: NTD3813N Power MOSFET 16 V, 51 A, Single N-Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThree Package Variations for Design Flexibility


    Original     		PDF NTD3813N NTD3813N/D 369D NTD3813N-1G NTD3813N-35G NTD3813NT4G

    48 13ng mosfet

    Abstract: 369D NTD4813N 4813ng
    Text: NTD4813N Power MOSFET 30 V, 40 A, Single N-Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices http://onsemi.com


    Original     		PDF NTD4813N NTD4813N/D 48 13ng mosfet 369D NTD4813N 4813ng

    IN 4002 MIC diode

    Abstract: MA47054 1N5719 equivalent ma-47266 1N5719 JANTX diode D 07-15 15
    Text: M/A-COM SEMICONDnBRLNGTON ApKcm 11 D • SbM2E14 GD0113M T ■MIC Axial Lead PIN Diodes Features ■ GLASS HERMETIC SEALED PACKAGES ■ SCREENABLE TO JANTXV AND MILITARY SPECIFICATIONS ■ LARGE SIGNAL SWITCH DESIGN ■ LOW CAPACITANCE 0.1 pF PIN DIODES


    OCR Scan     		PDF SbM2E14 GD0113M IN 4002 MIC diode MA47054 1N5719 equivalent ma-47266 1N5719 JANTX diode D 07-15 15

    Untitled

    Abstract: No abstract text available
    Text: frS-rxiM ¿60 rZ0-N3 •Noissinyad NsnidM inoHim assn 3B ion ainoHS onv asivyoyyooNi X330H 01 Ayvi3iyd0dd SI 1VH1 NOUVWdOdNI 5NIV1N00 BNIMVdQ SIH1 l0S°900-6tZ)^S-aS 900-60b25-OS 13VH3 33S JO 310NV 'ON 133H5 'ON 3VId31VH _dlAlVNdlld avo _ 'ON 3NIMV3Q


    OCR Scan     		PDF 900-6tZ) 900-60b25-OS 13VH3 310NV Id31V QV33Z 333NV-1H3I3 0U33r0dd -60b2S 3V13H