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    NTD4813NT4G Price and Stock

    onsemi NTD4813NT4G

    MOSFET N-CH 30V 7.6A/40A DPAK
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    DigiKey NTD4813NT4G Reel
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    Verical NTD4813NT4G 172,500 2,037
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    NTD4813NT4G 75,000 2,037
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    NTD4813NT4G 2,500 2,037
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    Rochester Electronics NTD4813NT4G 252,500 1
    • 1 $0.1733
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    Rochester Electronics LLC NTD4813NT4G

    MOSFET N-CH 30V 7.6A/40A DPAK
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    DigiKey NTD4813NT4G Bulk 1,665
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    NTD4813NT4G Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NTD4813NT4G On Semiconductor Power MOSFET 30 V, 40 A, Single N-Channel, DPAK Original PDF

    NTD4813NT4G Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    48 13ng mosfet

    Abstract: 369C 369D NTD4813N NTD4813NT4G TF 241
    Text: NTD4813N Power MOSFET 30 V, 40 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original
    PDF NTD4813N NTD4813N/D 48 13ng mosfet 369C 369D NTD4813N NTD4813NT4G TF 241

    48 13ng mosfet

    Abstract: NTD4813N
    Text: NTD4813N Power MOSFET 30 V, 40 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original
    PDF NTD4813N NTD4813N/D 48 13ng mosfet

    Untitled

    Abstract: No abstract text available
    Text: NTD4813N Power MOSFET 30 V, 40 A, Single N-Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com


    Original
    PDF NTD4813N NTD4813N/D

    369D

    Abstract: NTD4813N
    Text: NTD4813N Power MOSFET 30 V, 40 A, Single N-Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com


    Original
    PDF NTD4813N NTD4813N/D 369D NTD4813N

    4813N

    Abstract: No abstract text available
    Text: NTD4813N Power MOSFET 30 V, 40 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original
    PDF NTD4813N NTD4813N/D 4813N

    NTP2955G

    Abstract: m74vhc1gt50 MBRA340T3G NTR4003NT1G NCV78L00A ncv7420 MBRB20100CTT4G BAT54CL MBRS2H100T3G MBRS340T3G
    Text: 5V ±3% 80 mA 0.8 V — 6 mA 1 mA CS8101 5V ±2% 100 mA 0.6 V 50 mA 140 mA (100 mA) CS8151 5V ±2% 100 mA 0.6 V — 750 mA (200 mA) CS8221 5V ±2% 100 mA 0.6 V — NCV317L Adj ±4% 100 mA 1.9 V (Typ) — Overvoltage Current Limit Wakeup l Overtemperature


    Original
    PDF CS8101 CS8151 CS8221 NCV317L NCV553 SC-82 SOIC-20 SGD516/D NTP2955G m74vhc1gt50 MBRA340T3G NTR4003NT1G NCV78L00A ncv7420 MBRB20100CTT4G BAT54CL MBRS2H100T3G MBRS340T3G

    48 13ng mosfet

    Abstract: 48 13ng
    Text: NTD4813N Power MOSFET 30 V, 40 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original
    PDF NTD4813N NTD4813N/D 48 13ng mosfet 48 13ng

    13ng

    Abstract: NTD4813N 4813NG NTD4813N-1G 369D 4813N 369ac
    Text: NTD4813N Power MOSFET 30 V, 40 A, Single N-Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices http://onsemi.com


    Original
    PDF NTD4813N NTD4813N/D 13ng NTD4813N 4813NG NTD4813N-1G 369D 4813N 369ac

    48 13ng mosfet

    Abstract: 369D NTD4813N 4813ng
    Text: NTD4813N Power MOSFET 30 V, 40 A, Single N-Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices http://onsemi.com


    Original
    PDF NTD4813N NTD4813N/D 48 13ng mosfet 369D NTD4813N 4813ng